JP2012522329A5 - - Google Patents

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Publication number
JP2012522329A5
JP2012522329A5 JP2012503520A JP2012503520A JP2012522329A5 JP 2012522329 A5 JP2012522329 A5 JP 2012522329A5 JP 2012503520 A JP2012503520 A JP 2012503520A JP 2012503520 A JP2012503520 A JP 2012503520A JP 2012522329 A5 JP2012522329 A5 JP 2012522329A5
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JP
Japan
Prior art keywords
block address
memory cell
memory
memory cells
control circuit
Prior art date
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Application number
JP2012503520A
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English (en)
Japanese (ja)
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JP2012522329A (ja
JP5358734B2 (ja
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Publication date
Priority claimed from US12/414,452 external-priority patent/US7916528B2/en
Application filed filed Critical
Publication of JP2012522329A publication Critical patent/JP2012522329A/ja
Publication of JP2012522329A5 publication Critical patent/JP2012522329A5/ja
Application granted granted Critical
Publication of JP5358734B2 publication Critical patent/JP5358734B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012503520A 2009-03-30 2010-03-25 不揮発性メモリセルの予測的予加熱 Expired - Fee Related JP5358734B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/414,452 2009-03-30
US12/414,452 US7916528B2 (en) 2009-03-30 2009-03-30 Predictive thermal preconditioning and timing control for non-volatile memory cells
PCT/US2010/028628 WO2010117654A1 (en) 2009-03-30 2010-03-25 Predictive pre-heating of non-volatile memory cells

Publications (3)

Publication Number Publication Date
JP2012522329A JP2012522329A (ja) 2012-09-20
JP2012522329A5 true JP2012522329A5 (enExample) 2013-05-02
JP5358734B2 JP5358734B2 (ja) 2013-12-04

Family

ID=42355381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012503520A Expired - Fee Related JP5358734B2 (ja) 2009-03-30 2010-03-25 不揮発性メモリセルの予測的予加熱

Country Status (6)

Country Link
US (3) US7916528B2 (enExample)
EP (1) EP2415051B1 (enExample)
JP (1) JP5358734B2 (enExample)
KR (1) KR101433735B1 (enExample)
CN (1) CN102422358B (enExample)
WO (1) WO2010117654A1 (enExample)

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US8582226B2 (en) 2012-03-15 2013-11-12 Seagate Technology Llc Write delay stabilization
WO2013171947A1 (ja) 2012-05-16 2013-11-21 ソニー株式会社 記憶装置、記憶素子
US8913422B2 (en) 2012-09-28 2014-12-16 Intel Corporation Decreased switching current in spin-transfer torque memory
US9842053B2 (en) * 2013-03-15 2017-12-12 Sandisk Technologies Llc Systems and methods for persistent cache logging
US9436408B2 (en) * 2013-12-20 2016-09-06 Seagate Technology Llc Direct hinting for a memory device
US9530523B2 (en) * 2014-06-25 2016-12-27 Intel Corporation Thermal disturb as heater in cross-point memory
US9601176B2 (en) 2015-03-20 2017-03-21 Kabushiki Kaisha Toshiba Nonvolatile memory
US9607676B2 (en) * 2015-08-12 2017-03-28 Avalanche Technology, Inc. Method and apparatus for adjustment of current through a magnetoresistive tunnel junction (MTJ) based on temperature fluctuations
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KR102385166B1 (ko) 2017-03-14 2022-04-08 에스케이하이닉스 주식회사 쓰기 성능이 향상된 자기 메모리 장치 및 그 동작 방법
US10446197B2 (en) 2017-08-31 2019-10-15 Micron Technology, Inc. Optimized scan interval
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US10365854B1 (en) * 2018-03-19 2019-07-30 Micron Technology, Inc. Tracking data temperatures of logical block addresses
US10678449B2 (en) * 2018-05-03 2020-06-09 Microsoft Technology, LLC Increasing flash memory retention time using waste heat
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