JP2015529929A5 - - Google Patents

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Publication number
JP2015529929A5
JP2015529929A5 JP2015528581A JP2015528581A JP2015529929A5 JP 2015529929 A5 JP2015529929 A5 JP 2015529929A5 JP 2015528581 A JP2015528581 A JP 2015528581A JP 2015528581 A JP2015528581 A JP 2015528581A JP 2015529929 A5 JP2015529929 A5 JP 2015529929A5
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JP
Japan
Prior art keywords
sub
block
blocks
memory
memory cells
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JP2015528581A
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English (en)
Japanese (ja)
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JP6321650B2 (ja
JP2015529929A (ja
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Priority claimed from US13/590,926 external-priority patent/US8891305B2/en
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Publication of JP2015529929A5 publication Critical patent/JP2015529929A5/ja
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Publication of JP6321650B2 publication Critical patent/JP6321650B2/ja
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JP2015528581A 2012-08-21 2013-08-20 メモリセルの分散されたサブブロックにアクセスすることを伴う装置および方法 Active JP6321650B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/590,926 2012-08-21
US13/590,926 US8891305B2 (en) 2012-08-21 2012-08-21 Apparatuses and methods involving accessing distributed sub-blocks of memory cells
PCT/US2013/055767 WO2014031624A1 (en) 2012-08-21 2013-08-20 Apparatuses and methods involving accessing distributed sub-blocks of memory cells

Publications (3)

Publication Number Publication Date
JP2015529929A JP2015529929A (ja) 2015-10-08
JP2015529929A5 true JP2015529929A5 (enExample) 2016-05-26
JP6321650B2 JP6321650B2 (ja) 2018-05-09

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ID=50147891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015528581A Active JP6321650B2 (ja) 2012-08-21 2013-08-20 メモリセルの分散されたサブブロックにアクセスすることを伴う装置および方法

Country Status (7)

Country Link
US (5) US8891305B2 (enExample)
EP (2) EP3686890A1 (enExample)
JP (1) JP6321650B2 (enExample)
KR (1) KR102214272B1 (enExample)
CN (1) CN104685569B (enExample)
TW (1) TWI512756B (enExample)
WO (1) WO2014031624A1 (enExample)

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CN107689377A (zh) * 2016-08-06 2018-02-13 厦门海存艾匹科技有限公司 含有分离地址/数据转换器的三维一次电编程存储器
US8891305B2 (en) 2012-08-21 2014-11-18 Micron Technology, Inc. Apparatuses and methods involving accessing distributed sub-blocks of memory cells
US9312005B2 (en) * 2013-09-10 2016-04-12 Micron Technology, Inc. Accessing memory cells in parallel in a cross-point array
WO2019178545A1 (en) 2018-03-16 2019-09-19 Micron Technology, Inc Nand data placement schema
CN112074816B (zh) 2018-03-16 2025-02-21 美光科技公司 Nand数据放置模式的集群奇偶校验
US11271002B2 (en) 2019-04-12 2022-03-08 Micron Technology, Inc. Methods used in forming a memory array comprising strings of memory cells
US12483804B2 (en) * 2023-12-08 2025-11-25 Varjo Technologies Oy Subsampling and wobulation in colour filter arrays having smallest repeating units with different sub-units

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JP2007095222A (ja) 2005-09-30 2007-04-12 Eastman Kodak Co 半導体メモリ及びそのメモリコントローラ
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JP2011165298A (ja) 2010-01-18 2011-08-25 Elpida Memory Inc 半導体記憶装置及びこれを備えた情報処理システム
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