JP2012221522A5 - - Google Patents

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Publication number
JP2012221522A5
JP2012221522A5 JP2011084762A JP2011084762A JP2012221522A5 JP 2012221522 A5 JP2012221522 A5 JP 2012221522A5 JP 2011084762 A JP2011084762 A JP 2011084762A JP 2011084762 A JP2011084762 A JP 2011084762A JP 2012221522 A5 JP2012221522 A5 JP 2012221522A5
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JP
Japan
Prior art keywords
memory cell
voltage
gate electrode
control circuit
read operation
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Application number
JP2011084762A
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English (en)
Japanese (ja)
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JP2012221522A (ja
JP5404685B2 (ja
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Priority to JP2011084762A priority Critical patent/JP5404685B2/ja
Application filed filed Critical
Priority claimed from JP2011084762A external-priority patent/JP5404685B2/ja
Priority to US13/246,004 priority patent/US8385126B2/en
Publication of JP2012221522A publication Critical patent/JP2012221522A/ja
Priority to US13/749,029 priority patent/US8649221B2/en
Publication of JP2012221522A5 publication Critical patent/JP2012221522A5/ja
Priority to US14/088,744 priority patent/US9025387B2/en
Application granted granted Critical
Publication of JP5404685B2 publication Critical patent/JP5404685B2/ja
Priority to US14/677,111 priority patent/US9472295B2/en
Priority to US15/263,518 priority patent/US9691489B2/en
Priority to US15/598,554 priority patent/US9947415B2/en
Priority to US15/915,129 priority patent/US10186321B2/en
Priority to US16/209,520 priority patent/US10490286B2/en
Priority to US16/597,242 priority patent/US10818362B2/en
Priority to US17/026,904 priority patent/US11004520B2/en
Priority to US17/219,003 priority patent/US11621041B2/en
Priority to US18/173,211 priority patent/US11817155B2/en
Priority to US18/467,793 priority patent/US12068040B2/en
Priority to US18/752,870 priority patent/US12322454B2/en
Priority to US19/196,186 priority patent/US20250273276A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011084762A 2011-04-06 2011-04-06 不揮発性半導体記憶装置 Active JP5404685B2 (ja)

Priority Applications (16)

Application Number Priority Date Filing Date Title
JP2011084762A JP5404685B2 (ja) 2011-04-06 2011-04-06 不揮発性半導体記憶装置
US13/246,004 US8385126B2 (en) 2011-04-06 2011-09-27 Nonvolatile semiconductor memory device
US13/749,029 US8649221B2 (en) 2011-04-06 2013-01-24 Nonvolatile semiconductor memory device
US14/088,744 US9025387B2 (en) 2011-04-06 2013-11-25 Nonvolatile semiconductor memory device
US14/677,111 US9472295B2 (en) 2011-04-06 2015-04-02 Nonvolatile semiconductor memory device
US15/263,518 US9691489B2 (en) 2011-04-06 2016-09-13 Nonvolatile semiconductor memory device with first and second read operations with different read voltages
US15/598,554 US9947415B2 (en) 2011-04-06 2017-05-18 Nonvolatile semiconductor memory device having a control circuit that controls voltage applied to non-selected word lines connected to unselected memory cells
US15/915,129 US10186321B2 (en) 2011-04-06 2018-03-08 Nonvolatile semiconductor memory device
US16/209,520 US10490286B2 (en) 2011-04-06 2018-12-04 Electrically-rewritable nonvolatile semiconductor memory device
US16/597,242 US10818362B2 (en) 2011-04-06 2019-10-09 Nonvolatile semiconductor memory device including a memory cell array and a control circuit applying a reading voltage
US17/026,904 US11004520B2 (en) 2011-04-06 2020-09-21 Nonvolatile semiconductor memory device including a memory cell array and a control circuit applying a reading voltage
US17/219,003 US11621041B2 (en) 2011-04-06 2021-03-31 Nonvolatile semiconductor memory device including a memory cell array and a control circuit applying a reading voltage
US18/173,211 US11817155B2 (en) 2011-04-06 2023-02-23 Nonvolatile semiconductor memory device including a memory cell array and a control circuit applying a reading voltage
US18/467,793 US12068040B2 (en) 2011-04-06 2023-09-15 Nonvolatile semiconductor memory device including a memory cell array and a control circuit applying a reading voltage
US18/752,870 US12322454B2 (en) 2011-04-06 2024-06-25 Nonvolatile semiconductor memory device including a memory cell array and a control circuit applying a reading voltage
US19/196,186 US20250273276A1 (en) 2011-04-06 2025-05-01 Nonvolatile semiconductor memory device including a memory cell array and a control circuit applying a reading voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011084762A JP5404685B2 (ja) 2011-04-06 2011-04-06 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2012221522A JP2012221522A (ja) 2012-11-12
JP2012221522A5 true JP2012221522A5 (enExample) 2013-03-28
JP5404685B2 JP5404685B2 (ja) 2014-02-05

Family

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Family Applications (1)

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JP2011084762A Active JP5404685B2 (ja) 2011-04-06 2011-04-06 不揮発性半導体記憶装置

Country Status (2)

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US (15) US8385126B2 (enExample)
JP (1) JP5404685B2 (enExample)

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KR102065664B1 (ko) * 2013-08-09 2020-01-13 삼성전자 주식회사 메모리 장치의 열화 상태 추정 방법 및 이를 이용한 메모리 시스템에서의 웨어 레벨링 방법
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KR20160043579A (ko) * 2014-10-13 2016-04-22 삼성전자주식회사 반도체 장치의 사용시간 매니징 방법 및 그에 따른 사용시간 매니징 부를 구비한 반도체 장치
US9928138B2 (en) * 2015-02-17 2018-03-27 Toshiba Memory Corporation Memory system
WO2016203631A1 (ja) * 2015-06-19 2016-12-22 株式会社日立製作所 フラッシュメモリデバイス
JP2017054562A (ja) * 2015-09-08 2017-03-16 株式会社東芝 半導体記憶装置
JP6581019B2 (ja) 2016-03-02 2019-09-25 東芝メモリ株式会社 半導体記憶装置
US9711231B1 (en) * 2016-06-24 2017-07-18 Sandisk Technologies Llc System solution for first read issue using time dependent read voltages
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US10262743B2 (en) 2016-10-25 2019-04-16 Sandisk Technologies Llc Command sequence for first read solution for memory
US9952944B1 (en) 2016-10-25 2018-04-24 Sandisk Technologies Llc First read solution for memory
CN109215716B (zh) * 2017-07-05 2021-01-19 北京兆易创新科技股份有限公司 提高nand型浮栅存储器可靠性的方法及装置
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CN111444038B (zh) * 2020-03-28 2021-08-10 华中科技大学 闪存存储器可靠性的实时检测方法、检测设备及存储系统
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TWI829271B (zh) * 2021-09-17 2024-01-11 日商鎧俠股份有限公司 半導體記憶體裝置
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