JP5358734B2 - 不揮発性メモリセルの予測的予加熱 - Google Patents

不揮発性メモリセルの予測的予加熱 Download PDF

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Publication number
JP5358734B2
JP5358734B2 JP2012503520A JP2012503520A JP5358734B2 JP 5358734 B2 JP5358734 B2 JP 5358734B2 JP 2012503520 A JP2012503520 A JP 2012503520A JP 2012503520 A JP2012503520 A JP 2012503520A JP 5358734 B2 JP5358734 B2 JP 5358734B2
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Japan
Prior art keywords
memory cell
block address
memory
memory cells
block
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JP2012503520A
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English (en)
Japanese (ja)
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JP2012522329A (ja
JP2012522329A5 (enExample
Inventor
チェン，イラン
リー，ハイ
リュウ，ハリー・ホンギュ
ディミトロフ，ディミタール・ブイ
ワン，アラン・シュグアン
ワン，シャオビン
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Seagate Technology LLC
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Seagate Technology LLC
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Static Random-Access Memory (AREA)
JP2012503520A 2009-03-30 2010-03-25 不揮発性メモリセルの予測的予加熱 Expired - Fee Related JP5358734B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/414,452 2009-03-30
US12/414,452 US7916528B2 (en) 2009-03-30 2009-03-30 Predictive thermal preconditioning and timing control for non-volatile memory cells
PCT/US2010/028628 WO2010117654A1 (en) 2009-03-30 2010-03-25 Predictive pre-heating of non-volatile memory cells

Publications (3)

Publication Number Publication Date
JP2012522329A JP2012522329A (ja) 2012-09-20
JP2012522329A5 JP2012522329A5 (enExample) 2013-05-02
JP5358734B2 true JP5358734B2 (ja) 2013-12-04

Family

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Family Applications (1)

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JP2012503520A Expired - Fee Related JP5358734B2 (ja) 2009-03-30 2010-03-25 不揮発性メモリセルの予測的予加熱

Country Status (6)

Country Link
US (3) US7916528B2 (enExample)
EP (1) EP2415051B1 (enExample)
JP (1) JP5358734B2 (enExample)
KR (1) KR101433735B1 (enExample)
CN (1) CN102422358B (enExample)
WO (1) WO2010117654A1 (enExample)

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JP2012133829A (ja) * 2010-12-20 2012-07-12 Sony Corp 記憶装置、書込制御方法
JP5698651B2 (ja) * 2011-12-16 2015-04-08 ルネサスエレクトロニクス株式会社 半導体記憶装置
US8582226B2 (en) 2012-03-15 2013-11-12 Seagate Technology Llc Write delay stabilization
WO2013171947A1 (ja) 2012-05-16 2013-11-21 ソニー株式会社 記憶装置、記憶素子
US8913422B2 (en) 2012-09-28 2014-12-16 Intel Corporation Decreased switching current in spin-transfer torque memory
US9842053B2 (en) * 2013-03-15 2017-12-12 Sandisk Technologies Llc Systems and methods for persistent cache logging
US9436408B2 (en) * 2013-12-20 2016-09-06 Seagate Technology Llc Direct hinting for a memory device
US9530523B2 (en) * 2014-06-25 2016-12-27 Intel Corporation Thermal disturb as heater in cross-point memory
US9601176B2 (en) 2015-03-20 2017-03-21 Kabushiki Kaisha Toshiba Nonvolatile memory
US9607676B2 (en) * 2015-08-12 2017-03-28 Avalanche Technology, Inc. Method and apparatus for adjustment of current through a magnetoresistive tunnel junction (MTJ) based on temperature fluctuations
JP6178451B1 (ja) * 2016-03-16 2017-08-09 株式会社東芝 メモリセルおよび磁気メモリ
KR102385166B1 (ko) 2017-03-14 2022-04-08 에스케이하이닉스 주식회사 쓰기 성능이 향상된 자기 메모리 장치 및 그 동작 방법
US10446197B2 (en) 2017-08-31 2019-10-15 Micron Technology, Inc. Optimized scan interval
KR20190085359A (ko) * 2018-01-10 2019-07-18 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
US10365854B1 (en) * 2018-03-19 2019-07-30 Micron Technology, Inc. Tracking data temperatures of logical block addresses
US10678449B2 (en) * 2018-05-03 2020-06-09 Microsoft Technology, LLC Increasing flash memory retention time using waste heat
DE102020116424A1 (de) * 2020-06-22 2021-12-23 Bayerische Motoren Werke Aktiengesellschaft Verfahren und elektronische Einrichtung zur Temperaturüberwachung einer Leistungselektronik und Kraftfahrzeug

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US5388072A (en) * 1992-04-10 1995-02-07 International Business Machines Corporation Bit line switch array for electronic computer memory
US6603678B2 (en) * 2001-01-11 2003-08-05 Hewlett-Packard Development Company, L.P. Thermally-assisted switching of magnetic memory elements
US7342169B2 (en) 2001-10-05 2008-03-11 Nextreme Thermal Solutions Phonon-blocking, electron-transmitting low-dimensional structures
FR2832542B1 (fr) 2001-11-16 2005-05-06 Commissariat Energie Atomique Dispositif magnetique a jonction tunnel magnetique, memoire et procedes d'ecriture et de lecture utilisant ce dispositif
US7006336B2 (en) * 2002-08-06 2006-02-28 International Business Machines Corporation Magnetic head having a heater circuit for thermally-assisted writing
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US6771534B2 (en) * 2002-11-15 2004-08-03 International Business Machines Corporation Thermally-assisted magnetic writing using an oxide layer and current-induced heating
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US6930369B2 (en) * 2003-11-14 2005-08-16 Hewlett-Packard Development Company, L.P. Thin film device and a method of providing thermal assistance therein
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US20050150535A1 (en) 2004-01-13 2005-07-14 Nanocoolers, Inc. Method for forming a thin-film thermoelectric device including a phonon-blocking thermal conductor
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US7486545B2 (en) 2005-11-01 2009-02-03 Magic Technologies, Inc. Thermally assisted integrated MRAM design and process for its manufacture
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US7349243B2 (en) * 2006-04-20 2008-03-25 Taiwan Semiconductor Manufacturing Company, Ltd. 3-parameter switching technique for use in MRAM memory arrays
US7379327B2 (en) * 2006-06-26 2008-05-27 Grandis, Inc. Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins
JP2009010264A (ja) * 2007-06-29 2009-01-15 Toshiba Corp 抵抗変化メモリ装置及び集積回路装置
KR101258268B1 (ko) * 2007-07-26 2013-04-25 삼성전자주식회사 비휘발성 메모리 소자의 낸드형 저항성 메모리 셀 스트링들및 그 제조방법들
US7660151B2 (en) * 2007-09-17 2010-02-09 Qimonda Ag Method for programming an integrated circuit, method for programming a plurality of cells, integrated circuit, cell arrangement

Also Published As

Publication number Publication date
CN102422358B (zh) 2014-11-26
US8154914B2 (en) 2012-04-10
JP2012522329A (ja) 2012-09-20
US20100246251A1 (en) 2010-09-30
EP2415051B1 (en) 2013-10-23
US8553454B2 (en) 2013-10-08
WO2010117654A1 (en) 2010-10-14
US7916528B2 (en) 2011-03-29
KR101433735B1 (ko) 2014-08-25
KR20120001799A (ko) 2012-01-04
EP2415051A1 (en) 2012-02-08
CN102422358A (zh) 2012-04-18
US20120147665A1 (en) 2012-06-14
US20110128778A1 (en) 2011-06-02

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