JP2020524839A5 - - Google Patents

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Publication number
JP2020524839A5
JP2020524839A5 JP2019566261A JP2019566261A JP2020524839A5 JP 2020524839 A5 JP2020524839 A5 JP 2020524839A5 JP 2019566261 A JP2019566261 A JP 2019566261A JP 2019566261 A JP2019566261 A JP 2019566261A JP 2020524839 A5 JP2020524839 A5 JP 2020524839A5
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JP
Japan
Prior art keywords
chip
nand flash
future
writing
write
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JP2019566261A
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English (en)
Japanese (ja)
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JP2020524839A (ja
JP7234144B2 (ja
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Priority claimed from US15/816,447 external-priority patent/US10606484B2/en
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Publication of JP2020524839A5 publication Critical patent/JP2020524839A5/ja
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Publication of JP7234144B2 publication Critical patent/JP7234144B2/ja
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JP2019566261A 2017-06-23 2018-03-15 Nandバッファを有するnandフラッシュストレージデバイス Active JP7234144B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762524016P 2017-06-23 2017-06-23
US62/524,016 2017-06-23
US15/816,447 2017-11-17
US15/816,447 US10606484B2 (en) 2017-06-23 2017-11-17 NAND flash storage device with NAND buffer
PCT/US2018/022683 WO2018236440A1 (en) 2017-06-23 2018-03-15 Nand flash storage device with nand buffer

Publications (3)

Publication Number Publication Date
JP2020524839A JP2020524839A (ja) 2020-08-20
JP2020524839A5 true JP2020524839A5 (enExample) 2020-10-01
JP7234144B2 JP7234144B2 (ja) 2023-03-07

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JP2019566261A Active JP7234144B2 (ja) 2017-06-23 2018-03-15 Nandバッファを有するnandフラッシュストレージデバイス

Country Status (9)

Country Link
US (1) US10606484B2 (enExample)
EP (1) EP3418897B1 (enExample)
JP (1) JP7234144B2 (enExample)
KR (1) KR102276350B1 (enExample)
CN (1) CN109117085B (enExample)
DE (2) DE202018102304U1 (enExample)
GB (1) GB2563713B (enExample)
TW (1) TWI727160B (enExample)
WO (1) WO2018236440A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10481834B2 (en) * 2018-01-24 2019-11-19 Samsung Electronics Co., Ltd. Erasure code data protection across multiple NVME over fabrics storage devices
US11048430B2 (en) 2019-04-12 2021-06-29 Netapp, Inc. Object store mirroring where during resync of two storage bucket, objects are transmitted to each of the two storage bucket
KR102743222B1 (ko) 2019-06-12 2024-12-17 삼성전자 주식회사 전자 장치 및 그의 저장 공간 이용 방법
JP2021043908A (ja) * 2019-09-13 2021-03-18 キオクシア株式会社 メモリシステムおよび制御方法
US11269779B2 (en) 2020-05-27 2022-03-08 Microsoft Technology Licensing, Llc Memory system with a predictable read latency from media with a long write latency
CN118093449A (zh) * 2022-11-25 2024-05-28 长江存储科技有限责任公司 一种存储器系统及其垃圾回收方法、电子设备

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EP2359248A4 (en) 2008-12-19 2012-06-13 Hewlett Packard Development Co REDUNDANT MEMORIZATION OF DATA FOR A UNIFORM READING LATENCY
US8578084B2 (en) * 2009-04-08 2013-11-05 Google Inc. Data storage device having multiple removable memory boards
US8285946B2 (en) 2009-12-15 2012-10-09 International Business Machines Corporation Reducing access contention in flash-based memory systems
CN104040515B (zh) 2011-09-30 2018-05-11 英特尔公司 在逻辑驱动器模型下呈现直接存取的存储设备
CN106021147B (zh) * 2011-09-30 2020-04-28 英特尔公司 在逻辑驱动器模型下呈现直接存取的存储设备
JP2013109404A (ja) * 2011-11-17 2013-06-06 Toshiba Corp 情報処理装置
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KR102039537B1 (ko) * 2013-03-15 2019-11-01 삼성전자주식회사 불휘발성 저장 장치 및 그것의 운영체제 이미지 프로그램 방법
US20140304452A1 (en) 2013-04-03 2014-10-09 Violin Memory Inc. Method for increasing storage media performance
US9213634B2 (en) * 2013-11-22 2015-12-15 Apple Inc. Efficient reuse of segments in nonoverwrite storage systems
US9632729B2 (en) * 2014-05-07 2017-04-25 Seagate Technology Llc Storage compute device with tiered memory processing
KR20160075229A (ko) 2014-12-19 2016-06-29 삼성전자주식회사 가비지 컬렉션 동작 방법 및 이를 적용하는 레이드 스토리지 시스템
US10031670B2 (en) * 2015-09-04 2018-07-24 Toshiba Memory Corporation Control unit and control method for controlling writes and background operations of multiple semiconductor storage devices
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