ATE538475T1 - Seitenumkehrreihenfolgeschreiben in flash- speichern - Google Patents

Seitenumkehrreihenfolgeschreiben in flash- speichern

Info

Publication number
ATE538475T1
ATE538475T1 AT09766316T AT09766316T ATE538475T1 AT E538475 T1 ATE538475 T1 AT E538475T1 AT 09766316 T AT09766316 T AT 09766316T AT 09766316 T AT09766316 T AT 09766316T AT E538475 T1 ATE538475 T1 AT E538475T1
Authority
AT
Austria
Prior art keywords
written
page
word lines
pages
flash memory
Prior art date
Application number
AT09766316T
Other languages
English (en)
Inventor
Menahem Lasser
Original Assignee
Sandisk Il Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Il Ltd filed Critical Sandisk Il Ltd
Application granted granted Critical
Publication of ATE538475T1 publication Critical patent/ATE538475T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
AT09766316T 2008-06-16 2009-06-15 Seitenumkehrreihenfolgeschreiben in flash- speichern ATE538475T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/139,545 US7848144B2 (en) 2008-06-16 2008-06-16 Reverse order page writing in flash memories
PCT/IL2009/000592 WO2009153781A1 (en) 2008-06-16 2009-06-15 Reverse order page writing in flash memories

Publications (1)

Publication Number Publication Date
ATE538475T1 true ATE538475T1 (de) 2012-01-15

Family

ID=40974050

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09766316T ATE538475T1 (de) 2008-06-16 2009-06-15 Seitenumkehrreihenfolgeschreiben in flash- speichern

Country Status (8)

Country Link
US (2) US7848144B2 (de)
EP (1) EP2291847B1 (de)
JP (1) JP2011524600A (de)
KR (1) KR20110033206A (de)
CN (1) CN102067237B (de)
AT (1) ATE538475T1 (de)
TW (1) TWI406284B (de)
WO (1) WO2009153781A1 (de)

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CN109062822B (zh) * 2018-07-18 2021-09-07 北京世纪东方通讯设备有限公司 一种机车无线通信数据的存储方法及装置
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CN109979508A (zh) 2019-03-15 2019-07-05 合肥沛睿微电子股份有限公司 固态硬盘装置与相关的固态硬盘控制电路
TWI701677B (zh) * 2019-03-20 2020-08-11 大陸商合肥沛睿微電子股份有限公司 固態硬碟裝置與相關的資料寫入方法
TWI690936B (zh) * 2019-03-20 2020-04-11 大陸商合肥沛睿微電子股份有限公司 固態硬碟裝置與相關的固態硬碟控制電路
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Also Published As

Publication number Publication date
US20090310413A1 (en) 2009-12-17
KR20110033206A (ko) 2011-03-30
JP2011524600A (ja) 2011-09-01
TWI406284B (zh) 2013-08-21
EP2291847A1 (de) 2011-03-09
EP2291847B1 (de) 2011-12-21
US7848144B2 (en) 2010-12-07
CN102067237A (zh) 2011-05-18
CN102067237B (zh) 2014-01-01
US20110096603A1 (en) 2011-04-28
US8339855B2 (en) 2012-12-25
WO2009153781A1 (en) 2009-12-23
TW201009842A (en) 2010-03-01

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