ATE552552T1 - Programmierverwaltungsdaten für nand-speicher - Google Patents

Programmierverwaltungsdaten für nand-speicher

Info

Publication number
ATE552552T1
ATE552552T1 AT08724692T AT08724692T ATE552552T1 AT E552552 T1 ATE552552 T1 AT E552552T1 AT 08724692 T AT08724692 T AT 08724692T AT 08724692 T AT08724692 T AT 08724692T AT E552552 T1 ATE552552 T1 AT E552552T1
Authority
AT
Austria
Prior art keywords
data
error correction
management data
correction data
generate
Prior art date
Application number
AT08724692T
Other languages
English (en)
Inventor
Michael Murray
William Radke
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE552552T1 publication Critical patent/ATE552552T1/de

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1072—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in multilevel memories
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Detection And Correction Of Errors (AREA)
AT08724692T 2007-01-26 2008-01-22 Programmierverwaltungsdaten für nand-speicher ATE552552T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/698,455 US7861139B2 (en) 2007-01-26 2007-01-26 Programming management data for NAND memories
PCT/US2008/000804 WO2008091590A1 (en) 2007-01-26 2008-01-22 Programming management data for nand memories

Publications (1)

Publication Number Publication Date
ATE552552T1 true ATE552552T1 (de) 2012-04-15

Family

ID=39367515

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08724692T ATE552552T1 (de) 2007-01-26 2008-01-22 Programmierverwaltungsdaten für nand-speicher

Country Status (8)

Country Link
US (3) US7861139B2 (de)
EP (1) EP2106587B1 (de)
JP (1) JP5686516B2 (de)
KR (1) KR101312146B1 (de)
CN (1) CN101627371B (de)
AT (1) ATE552552T1 (de)
TW (1) TWI380313B (de)
WO (1) WO2008091590A1 (de)

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US9086983B2 (en) 2011-05-31 2015-07-21 Micron Technology, Inc. Apparatus and methods for providing data integrity
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KR20130049332A (ko) * 2011-11-04 2013-05-14 삼성전자주식회사 메모리 시스템 및 그것의 동작 방법
US8788915B2 (en) 2012-03-05 2014-07-22 Micron Technology, Inc. Apparatuses and methods for encoding using error protection codes
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Also Published As

Publication number Publication date
KR101312146B1 (ko) 2013-09-26
CN101627371A (zh) 2010-01-13
TWI380313B (en) 2012-12-21
WO2008091590A1 (en) 2008-07-31
EP2106587A1 (de) 2009-10-07
US7861139B2 (en) 2010-12-28
US8458564B2 (en) 2013-06-04
JP2010517168A (ja) 2010-05-20
CN101627371B (zh) 2012-09-05
JP5686516B2 (ja) 2015-03-18
US20080184094A1 (en) 2008-07-31
EP2106587B1 (de) 2012-04-04
KR20090117747A (ko) 2009-11-12
US20110093766A1 (en) 2011-04-21
US20130254630A1 (en) 2013-09-26
TW200839776A (en) 2008-10-01
US8943387B2 (en) 2015-01-27

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