JP5686516B2 - Nandメモリのためのプログラミング管理データ - Google Patents
Nandメモリのためのプログラミング管理データ Download PDFInfo
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- JP5686516B2 JP5686516B2 JP2009547272A JP2009547272A JP5686516B2 JP 5686516 B2 JP5686516 B2 JP 5686516B2 JP 2009547272 A JP2009547272 A JP 2009547272A JP 2009547272 A JP2009547272 A JP 2009547272A JP 5686516 B2 JP5686516 B2 JP 5686516B2
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- 230000015654 memory Effects 0.000 title claims abstract description 131
- 238000012937 correction Methods 0.000 claims abstract description 70
- 208000011580 syndromic disease Diseases 0.000 claims description 14
- 238000000034 method Methods 0.000 abstract description 34
- 238000009826 distribution Methods 0.000 description 19
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- 238000007667 floating Methods 0.000 description 10
- 238000000926 separation method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012795 verification Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 206010010356 Congenital anomaly Diseases 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
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- 230000036772 blood pressure Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1072—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in multilevel memories
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- Detection And Correction Of Errors (AREA)
Description
本特許出願は、本明細書において参照によって組み入れられている、2007年1月26日に提出された、U.S.Application No.11/698455の優先権を享受する利益を主張する。
本明細書に記述される種々の実施形態は、一般的には、不揮発性メモリデバイスに関し、不揮発性メモリデバイスと併せて使用されるエラー訂正を含む。
種々の実施形態は、本明細書において、メモリデバイスにおけるプログラミングシステム管理データのための機構として説明された。プログラミングは、バッファとダイレクトメモリアクセスとの間に接続される、エラー訂正モジュールを使用して内部で実施されうる。種々の実施形態においては、メモリデバイスはMLC NANDデバイスを含む。
Claims (6)
- バッファとダイレクトメモリアクセスとの間に接続された第一のマルチプレクサであって、前記第一のマルチプレクサは前記バッファから前記ダイレクトメモリアクセスへとデータを伝送する、第一のマルチプレクサと、
前記バッファと前記ダイレクトメモリアクセスとの間に接続された第二のマルチプレクサであって、前記第二のマルチプレクサは前記ダイレクトメモリアクセスから前記バッファへとデータを伝送する、第二のマルチプレクサと、
前記第一のマルチプレクサへと接続されたエラー訂正チェックビット発生器と、
前記第二のマルチプレクサと前記バッファへと接続されたエラー訂正モジュールと、
前記エラー訂正モジュールと前記ダイレクトメモリアクセスとの間に接続されたシンドローム発生器であって、前記シンドローム発生器は前記ダイレクトメモリアクセスから受信されたデータにおいて少なくとも1ビットのエラーの存在を検出する、シンドローム発生器と、
前記エラー訂正チェックビット発生器、前記エラー訂正モジュール、前記第一のマルチプレクサ、及び前記ダイレクトメモリアクセスに接続されたブロック管理モジュールであって、前記ブロック管理モジュールは一組のブロック管理データを生成する、ブロック管理モジュールと、を含む装置であって、
前記シンドローム発生器は、前記ダイレクトメモリアクセスから前記バッファへと伝送されたデータにおける前記検出されたエラーに基づいてシンドロームを生成し、生成した前記シンドロームを前記エラー訂正モジュールへと伝送することを特徴とする装置。 - 前記ダイレクトメモリアクセスは、マルチレベル(MLC)NANDフラッシュメモリへと接続される、ことを特徴とする請求項1に記載の装置。
- 前記ブロック管理モジュールは、前記バッファから前記ダイレクトアクセスへと伝送されたデータのそれぞれのページのためにブロック管理データを提供し、前記ブロック管理データは、前記バッファから前記ダイレクトアクセスへと伝送されたデータのそれぞれのページの最終セクターと組み合わせられる、
ことを特徴とする請求項2に記載の装置。 - 前記エラー訂正チェックビット発生器は、それぞれのページの最終セクターを除いて、それぞれのページの前記複数のセクターのそれぞれのためにエラー訂正コードを生成する、
ことを特徴とする請求項3記載の装置。 - 前記エラー訂正チェックビット発生器は、前記ブロック管理データ、及びそれぞれのページの最終セクターのためのエラー訂正コードを生成する、
ことを特徴とする請求項3に記載の装置。 - 前記第一のマルチプレクサは、複数のセクター、特定のセクターを除く前記複数のセクターのそれぞれのためのエラー訂正データ、ならびに、前記ブロック管理データと組み合わせられた前記特定のセレクターのための前記ブロック管理データ及びエラー訂正データ、を含むページを受信する、
ことを特徴とする請求項1に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/698,455 US7861139B2 (en) | 2007-01-26 | 2007-01-26 | Programming management data for NAND memories |
US11/698,455 | 2007-01-26 | ||
PCT/US2008/000804 WO2008091590A1 (en) | 2007-01-26 | 2008-01-22 | Programming management data for nand memories |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010517168A JP2010517168A (ja) | 2010-05-20 |
JP2010517168A5 JP2010517168A5 (ja) | 2011-03-17 |
JP5686516B2 true JP5686516B2 (ja) | 2015-03-18 |
Family
ID=39367515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009547272A Active JP5686516B2 (ja) | 2007-01-26 | 2008-01-22 | Nandメモリのためのプログラミング管理データ |
Country Status (8)
Country | Link |
---|---|
US (3) | US7861139B2 (ja) |
EP (1) | EP2106587B1 (ja) |
JP (1) | JP5686516B2 (ja) |
KR (1) | KR101312146B1 (ja) |
CN (1) | CN101627371B (ja) |
AT (1) | ATE552552T1 (ja) |
TW (1) | TWI380313B (ja) |
WO (1) | WO2008091590A1 (ja) |
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2007
- 2007-01-26 US US11/698,455 patent/US7861139B2/en active Active
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2008
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US8458564B2 (en) | 2013-06-04 |
WO2008091590A1 (en) | 2008-07-31 |
US20110093766A1 (en) | 2011-04-21 |
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US8943387B2 (en) | 2015-01-27 |
ATE552552T1 (de) | 2012-04-15 |
US20080184094A1 (en) | 2008-07-31 |
KR101312146B1 (ko) | 2013-09-26 |
EP2106587B1 (en) | 2012-04-04 |
US7861139B2 (en) | 2010-12-28 |
TWI380313B (en) | 2012-12-21 |
EP2106587A1 (en) | 2009-10-07 |
CN101627371A (zh) | 2010-01-13 |
TW200839776A (en) | 2008-10-01 |
US20130254630A1 (en) | 2013-09-26 |
CN101627371B (zh) | 2012-09-05 |
KR20090117747A (ko) | 2009-11-12 |
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