DE602006008480D1 - NAND-Flash-Speichervorrichtung mit ECC-geschütztem reserviertem Bereich für nicht-flüchtige Speicherung von Redundanzdaten - Google Patents

NAND-Flash-Speichervorrichtung mit ECC-geschütztem reserviertem Bereich für nicht-flüchtige Speicherung von Redundanzdaten

Info

Publication number
DE602006008480D1
DE602006008480D1 DE602006008480T DE602006008480T DE602006008480D1 DE 602006008480 D1 DE602006008480 D1 DE 602006008480D1 DE 602006008480 T DE602006008480 T DE 602006008480T DE 602006008480 T DE602006008480 T DE 602006008480T DE 602006008480 D1 DE602006008480 D1 DE 602006008480D1
Authority
DE
Germany
Prior art keywords
memory device
flash memory
volatile storage
nand flash
reserved area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006008480T
Other languages
English (en)
Inventor
Rino Micheloni
Roberto Ravasio
Alessia Marelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
SK Hynix Inc
Original Assignee
STMicroelectronics SRL
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, Hynix Semiconductor Inc filed Critical STMicroelectronics SRL
Publication of DE602006008480D1 publication Critical patent/DE602006008480D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
    • G11C29/82—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for EEPROMs
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411—Online error correction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
DE602006008480T 2006-09-13 2006-09-13 NAND-Flash-Speichervorrichtung mit ECC-geschütztem reserviertem Bereich für nicht-flüchtige Speicherung von Redundanzdaten Active DE602006008480D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP06425632A EP1912121B1 (de) 2006-09-13 2006-09-13 NAND-Flash-Speichervorrichtung mit ECC-geschütztem reserviertem Bereich für nicht-flüchtige Speicherung von Redundanzdaten

Publications (1)

Publication Number Publication Date
DE602006008480D1 true DE602006008480D1 (de) 2009-09-24

Family

ID=37670896

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006008480T Active DE602006008480D1 (de) 2006-09-13 2006-09-13 NAND-Flash-Speichervorrichtung mit ECC-geschütztem reserviertem Bereich für nicht-flüchtige Speicherung von Redundanzdaten

Country Status (4)

Country Link
US (1) US20080065937A1 (de)
EP (1) EP1912121B1 (de)
CN (1) CN101202107A (de)
DE (1) DE602006008480D1 (de)

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JP5650116B2 (ja) 2008-10-09 2015-01-07 マイクロン テクノロジー， インク． 仮想化ｅｃｃ−ｎａｎｄ
TWI475378B (zh) * 2008-10-09 2015-03-01 Micron Technology Inc 耦合至一主機之儲存系統、與儲存系統中之nand記憶體介接之控制器及管理nand記憶體裝置堆疊之方法
CN101425342B (zh) * 2008-10-29 2010-12-08 四川和芯微电子股份有限公司 针对NAND Flash冗余码的存取方法
US8446787B2 (en) * 2008-11-20 2013-05-21 Micron Technology, Inc. Replacing defective memory blocks in response to external addresses
US8321764B2 (en) 2008-12-11 2012-11-27 Micron Technology, Inc. Multilevel encoding with error correction
US9092649B2 (en) * 2009-03-02 2015-07-28 Macronix International Co., Ltd. Data protecting method capable of effectively recording protection information and memory using thereof
US8327224B2 (en) * 2009-04-16 2012-12-04 Micron Technology, Inc. Data recovery in a solid state storage system
US8321775B2 (en) 2009-04-21 2012-11-27 Micron Technology, Inc. Non-volatile memory with extended error correction protection
US8286066B2 (en) 2009-05-18 2012-10-09 Micron Technology, Inc. Non-volatile memory with bi-directional error correction protection
US8370702B2 (en) 2009-06-10 2013-02-05 Micron Technology, Inc. Error correcting codes for increased storage capacity in multilevel memory devices
CN101587744B (zh) * 2009-06-19 2011-11-23 上海微小卫星工程中心 一种大规模flash存储阵列的多层次数据冗余方法
CN101930402B (zh) * 2009-06-23 2012-10-24 北京兆易创新科技有限公司 具有检错/纠错电路的非挥发存储器及其读写方法
US8386885B1 (en) 2009-08-26 2013-02-26 Cypress Semiconductor Corporation Using ECC memory to store configuration information
US8510628B2 (en) * 2009-11-12 2013-08-13 Micron Technology, Inc. Method and apparatuses for customizable error correction of memory
CN102270497A (zh) * 2010-06-02 2011-12-07 王彬 以影子非挥发存储器配置冗余存储的存储器
KR101124332B1 (ko) * 2010-07-02 2012-03-19 주식회사 하이닉스반도체 비휘발성 메모리 장치 및 그 설정정보 처리방법
JP5377526B2 (ja) 2011-01-13 2013-12-25 株式会社東芝 不揮発性半導体記憶装置
TWI473105B (zh) * 2011-01-18 2015-02-11 Macronix Int Co Ltd 具有錯誤自動檢查與更正位元之三維記憶體結構
US9058288B2 (en) 2011-04-03 2015-06-16 Apple Inc. Redundant storage in non-volatile memory by storing redundancy information in volatile memory
US9202569B2 (en) * 2011-08-12 2015-12-01 Micron Technology, Inc. Methods for providing redundancy and apparatuses
US20140068313A1 (en) * 2012-08-31 2014-03-06 Shinobu SHIMPUKU Storage device
KR101984789B1 (ko) * 2012-10-12 2019-06-04 에스케이하이닉스 주식회사 반도체 메모리 장치
CN103794253B (zh) * 2012-10-30 2017-02-08 北京兆易创新科技股份有限公司 一种Nand闪存和读取其配置信息的方法和装置
US9183082B2 (en) 2013-01-29 2015-11-10 Qualcomm Incorporated Error detection and correction of one-time programmable elements
US8843674B2 (en) * 2013-02-26 2014-09-23 Kabushiki Kaisha Toshiba Semiconductor memory device capable of testing signal integrity
CN103164343B (zh) * 2013-02-27 2015-12-09 山东大学 基于相变存储器的分页、ecc校验及多位预取方法及其结构
US9348690B2 (en) 2013-08-21 2016-05-24 Via Alliance Semiconductor Co., Ltd. Correctable configuration data compression and decompression system
US9223715B2 (en) 2013-08-21 2015-12-29 Via Alliance Semiconductor Co., Ltd. Microprocessor mechanism for decompression of cache correction data
US9189332B1 (en) 2013-09-13 2015-11-17 Seagate Technology Llc Parity data in solid state memory
JP5657079B1 (ja) 2013-10-24 2015-01-21 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
US9239756B2 (en) 2013-12-13 2016-01-19 Sandisk Technologies Inc. Systems and methods for performing data recovery in a memory system
US9524241B2 (en) 2014-05-22 2016-12-20 Via Alliance Semiconductor Co., Ltd. Multi-core microprocessor power gating cache restoral mechanism
US9665490B2 (en) 2014-05-22 2017-05-30 Via Alliance Semiconductor Co., Ltd. Apparatus and method for repairing cache arrays in a multi-core microprocessor
US9606933B2 (en) 2014-05-22 2017-03-28 Via Alliance Semiconductor Co., Ltd. Multi-core apparatus and method for restoring data arrays following a power gating event
US9395802B2 (en) 2014-05-22 2016-07-19 Via Alliance Semiconductor Co., Ltd. Multi-core data array power gating restoral mechanism
JP2016143085A (ja) * 2015-01-29 2016-08-08 株式会社東芝 装置及び方法
FR3044818B1 (fr) 2015-12-02 2018-03-30 Stmicroelectronics (Rousset) Sas Procede de gestion d'une ligne defectueuse du plan memoire d'une memoire non volatile et dispositif de memoire correspondant
US10198315B2 (en) 2016-02-29 2019-02-05 Sandisk Technologies Llc Non-volatile memory with corruption recovery
KR102487553B1 (ko) * 2016-12-07 2023-01-11 삼성전자주식회사 리페어 가능한 휘발성 메모리를 포함하는 스토리지 장치 및 상기 스토리지 장치의 동작 방법
US10725933B2 (en) * 2016-12-30 2020-07-28 Intel Corporation Method and apparatus for redirecting memory access commands sent to unusable memory partitions
CN110990175B (zh) * 2018-10-03 2023-03-14 慧荣科技股份有限公司 错误处置方法以及数据存储装置及其控制器
US11538532B2 (en) * 2020-12-29 2022-12-27 Silicon Storage Technology, Inc. Architectures for storing and retrieving system data in a non-volatile memory system

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WO2001022232A1 (fr) 1999-09-17 2001-03-29 Hitachi, Ltd. Memoire dans laquelle le nombre de corrections d'erreurs est enregistre
EP1607865B1 (de) 2004-06-14 2013-08-14 Micron Technology, Inc. Datenverwaltungseinheit fähig Startfehler zu korrigieren und entsprechendes Verfahren

Also Published As

Publication number Publication date
EP1912121B1 (de) 2009-08-12
CN101202107A (zh) 2008-06-18
EP1912121A1 (de) 2008-04-16
US20080065937A1 (en) 2008-03-13

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