JP2019517026A5 - - Google Patents

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JP2019517026A5
JP2019517026A5 JP2018559777A JP2018559777A JP2019517026A5 JP 2019517026 A5 JP2019517026 A5 JP 2019517026A5 JP 2018559777 A JP2018559777 A JP 2018559777A JP 2018559777 A JP2018559777 A JP 2018559777A JP 2019517026 A5 JP2019517026 A5 JP 2019517026A5
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JP2018559777A 2016-05-13 2017-05-12 光増感化学又は感光性化学増幅レジストを用いた限界寸法制御 Active JP6909374B2 (ja)

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US201662335977P 2016-05-13 2016-05-13
US62/335,977 2016-05-13
PCT/US2017/032435 WO2017197279A1 (en) 2016-05-13 2017-05-12 Critical dimension control by use of photo-sensitized chemicals or photo-sensitized chemically amplified resist

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JP2019517026A JP2019517026A (ja) 2019-06-20
JP2019517026A5 true JP2019517026A5 (cg-RX-API-DMAC10.html) 2020-06-25
JP6909374B2 JP6909374B2 (ja) 2021-07-28

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US (1) US10551743B2 (cg-RX-API-DMAC10.html)
JP (1) JP6909374B2 (cg-RX-API-DMAC10.html)
KR (1) KR102475021B1 (cg-RX-API-DMAC10.html)
CN (1) CN109313394B (cg-RX-API-DMAC10.html)
TW (1) TWI657314B (cg-RX-API-DMAC10.html)
WO (1) WO2017197279A1 (cg-RX-API-DMAC10.html)

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JP6809843B2 (ja) 2015-08-20 2021-01-06 国立大学法人大阪大学 パターン形成方法
JP6774814B2 (ja) 2015-08-20 2020-10-28 国立大学法人大阪大学 化学増幅型レジスト材料及びパターン形成方法
JP6512994B2 (ja) 2015-08-20 2019-05-15 国立大学法人大阪大学 化学増幅型レジスト材料
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
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WO2017197288A1 (en) 2016-05-13 2017-11-16 Tokyo Electron Limited Critical dimension control by use of a photo agent
TWI657314B (zh) 2016-05-13 2019-04-21 Tokyo Electron Limited 藉由使用光敏化學品或光敏化學增幅型光阻劑之臨界尺寸控制

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