JP2019514042A5 - - Google Patents

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JP2019514042A5
JP2019514042A5 JP2018547903A JP2018547903A JP2019514042A5 JP 2019514042 A5 JP2019514042 A5 JP 2019514042A5 JP 2018547903 A JP2018547903 A JP 2018547903A JP 2018547903 A JP2018547903 A JP 2018547903A JP 2019514042 A5 JP2019514042 A5 JP 2019514042A5
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buffer
further embodiments
hardmask
nitride
silicon nitride
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JP2019514042A (ja
JP6993982B2 (ja
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JP2018547903A 2016-03-11 2017-03-10 予めパターン形成されたリソグラフィ・テンプレート、該テンプレートを使用した放射線パターニングに基づくプロセス、及び該テンプレートを形成するためのプロセス Active JP6993982B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662306979P 2016-03-11 2016-03-11
US62/306,979 2016-03-11
PCT/US2017/021769 WO2017156388A1 (en) 2016-03-11 2017-03-10 Pre-patterned lithography templates, processes based on radiation patterning using the templates and processes to form the templates

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JP2019514042A JP2019514042A (ja) 2019-05-30
JP2019514042A5 true JP2019514042A5 (https=) 2021-08-12
JP6993982B2 JP6993982B2 (ja) 2022-02-04

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JP2018547903A Active JP6993982B2 (ja) 2016-03-11 2017-03-10 予めパターン形成されたリソグラフィ・テンプレート、該テンプレートを使用した放射線パターニングに基づくプロセス、及び該テンプレートを形成するためのプロセス

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US (2) US10649328B2 (https=)
JP (1) JP6993982B2 (https=)
KR (1) KR102394042B1 (https=)
CN (1) CN108780739B (https=)
TW (1) TWI721125B (https=)
WO (1) WO2017156388A1 (https=)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
TWI639179B (zh) 2014-01-31 2018-10-21 美商蘭姆研究公司 真空整合硬遮罩製程及設備
GB201413924D0 (en) 2014-08-06 2014-09-17 Univ Manchester Electron beam resist composition
GB201517273D0 (en) 2015-09-30 2015-11-11 Univ Manchester Resist composition
CN108780739B (zh) 2016-03-11 2023-09-15 因普里亚公司 预图案化光刻模板、基于使用该模板的辐射图案化的工艺及形成该模板的工艺
CN109844642B (zh) * 2016-09-13 2022-11-22 谷歌有限责任公司 防止光致抗蚀剂显影剂蚀刻的缓冲层
US10217633B2 (en) * 2017-03-13 2019-02-26 Globalfoundries Inc. Substantially defect-free polysilicon gate arrays
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
KR102401711B1 (ko) * 2018-03-02 2022-05-26 도쿄엘렉트론가부시키가이샤 패턴을 층에 전사하기 위한 방법
JP7348441B2 (ja) * 2018-04-03 2023-09-21 東京エレクトロン株式会社 完全自己整合方式を使用するサブトラクティブ相互接続形成
EP3782190A4 (en) * 2018-04-16 2022-05-04 Applied Materials, Inc. OPTICAL MULTI-STACKS USING TEMPORARY AND PERMANENT BONDING
KR102678588B1 (ko) 2018-11-14 2024-06-27 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR102937721B1 (ko) 2019-06-28 2026-03-12 램 리써치 코포레이션 금속-함유 레지스트의 리소그래피 성능을 향상시키기 위한 소성 (bake) 전략들
JP7618601B2 (ja) 2019-06-28 2025-01-21 ラム リサーチ コーポレーション 複数のパターニング放射吸収元素および/または垂直組成勾配を備えたフォトレジスト
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
US11886116B2 (en) 2020-05-06 2024-01-30 Inpria Corporation Multiple patterning with organometallic photopatternable layers with intermediate freeze steps
JP2023530299A (ja) 2020-06-22 2023-07-14 ラム リサーチ コーポレーション 金属含有フォトレジスト堆積のための表面改質
US12416863B2 (en) * 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist
US11621172B2 (en) 2020-07-01 2023-04-04 Applied Materials, Inc. Vapor phase thermal etch solutions for metal oxo photoresists
WO2022010809A1 (en) 2020-07-07 2022-01-13 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
CN113937182B (zh) * 2020-07-13 2024-07-12 中国科学院理化技术研究所 一种具有柔性基底的尺寸可控的氧化锌基光电器件及其制备方法
WO2022103764A1 (en) 2020-11-13 2022-05-19 Lam Research Corporation Process tool for dry removal of photoresist
US11079682B1 (en) * 2020-11-13 2021-08-03 Tokyo Electron Limited Methods for extreme ultraviolet (EUV) resist patterning development
US12577466B2 (en) 2020-12-08 2026-03-17 Lam Research Corporation Photoresist development with organic vapor
US20220199406A1 (en) * 2020-12-17 2022-06-23 Applied Materials, Inc. Vapor deposition of carbon-doped metal oxides for use as photoresists
US20220262625A1 (en) * 2021-02-18 2022-08-18 Applied Materials, Inc. Chemical vapor condensation deposition of photoresist films
US12494368B2 (en) * 2021-11-12 2025-12-09 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist and method
TW202337929A (zh) 2021-11-15 2023-10-01 日商日產化學股份有限公司 多環芳香族烴系光硬化性樹脂組成物
WO2023204287A1 (ja) 2022-04-22 2023-10-26 日産化学株式会社 レジスト下層膜形成用組成物
WO2023235534A1 (en) 2022-06-02 2023-12-07 Gelest, Inc. High purity alkyl tin compounds and manufacturing methods thereof
KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
KR20250040045A (ko) 2022-08-12 2025-03-21 젤리스트 인코퍼레이티드 불포화 치환기를 함유하는 고순도 주석 화합물 및 이의 제조 방법
US12606577B2 (en) 2022-09-28 2026-04-21 Gelest, Inc. Iodoalkyl tin compounds and preparation methods thereof
US12145955B2 (en) 2022-10-04 2024-11-19 Gelest, Inc. Cyclic azastannane and cyclic oxostannane compounds and methods for preparation thereof
KR20250121560A (ko) 2022-12-15 2025-08-12 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성용 조성물
EP4636486A1 (en) 2022-12-15 2025-10-22 Nissan Chemical Corporation Composition for forming resist underlayer film
JPWO2024157904A1 (https=) 2023-01-23 2024-08-02
CN120530365A (zh) 2023-02-03 2025-08-22 日产化学株式会社 用于降低环境负荷的抗蚀剂下层膜形成用组合物
CN120584325A (zh) 2023-02-09 2025-09-02 日产化学株式会社 抗蚀剂下层膜形成用组合物
EP4657158A4 (en) 2023-02-27 2026-04-29 Nissan Chemical Corp Resist underlayer film formation composition
CN120641830A (zh) 2023-02-28 2025-09-12 日产化学株式会社 具有碳-碳双键的含硅抗蚀剂下层膜形成用组合物
WO2024196643A1 (en) 2023-03-17 2024-09-26 Lam Research Corporation Integration of dry development and etch processes for euv patterning in a single process chamber
TW202511058A (zh) 2023-03-24 2025-03-16 日商日產化學股份有限公司 光學繞射體製造用阻劑下層膜形成用組成物
WO2024197615A1 (zh) * 2023-03-29 2024-10-03 京东方科技集团股份有限公司 金属网格的制备方法和天线的制备方法
EP4692945A1 (en) 2023-03-30 2026-02-11 Nissan Chemical Corporation Composition for forming resist underlayer film
KR20250166879A (ko) 2023-03-31 2025-11-28 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성용 조성물
EP4692944A1 (en) 2023-03-31 2026-02-11 Nissan Chemical Corporation Composition for forming resist underlayer film
KR20260008780A (ko) 2023-05-09 2026-01-16 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성용 조성물
KR20250034920A (ko) 2023-07-27 2025-03-11 램 리써치 코포레이션 금속-함유 포토레지스트에 대한 올-인-원 건식 현상
CN117364235B (zh) * 2023-12-07 2024-03-26 度亘核芯光电技术(苏州)有限公司 选区外延生长方法及其中使用的掩膜结构

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302198A (en) 1990-09-14 1994-04-12 Ncr Corporation Coating solution for forming glassy layers
US5270265A (en) * 1992-09-01 1993-12-14 Harris Corporation Stress relief technique of removing oxide from surface of trench-patterned semiconductor-on-insulator structure
JP3198310B2 (ja) 1993-01-06 2001-08-13 株式会社ニコン 露光方法及び装置
KR20030007904A (ko) 2000-06-06 2003-01-23 이케이씨 테크놀로지, 인코포레이티드 전자 재료 제조 방법
US7270886B2 (en) 2000-10-12 2007-09-18 Samsung Electronics Co., Ltd. Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same
US6368982B1 (en) * 2000-11-15 2002-04-09 Advanced Micro Devices, Inc. Pattern reduction by trimming a plurality of layers of different handmask materials
US20020157418A1 (en) 2001-03-19 2002-10-31 Rahul Ganguli Process for reducing or eliminating bubble defects in sol-gel silica glass
US7160746B2 (en) 2001-07-27 2007-01-09 Lightwave Microsystems Corporation GeBPSG top clad for a planar lightwave circuit
JP2003303824A (ja) 2002-04-12 2003-10-24 Sony Corp 半導体装置の製造方法
US7037639B2 (en) * 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
JP4932134B2 (ja) 2003-09-16 2012-05-16 旺宏電子股▲ふん▼有限公司 集積回路の製造における位置合わせ精度条件を緩和する方法
US7348281B2 (en) 2003-09-19 2008-03-25 Brewer Science Inc. Method of filling structures for forming via-first dual damascene interconnects
KR100583957B1 (ko) 2003-12-03 2006-05-26 삼성전자주식회사 희생금속산화막을 채택하여 이중다마신 금속배선을형성하는 방법
JP4839723B2 (ja) 2005-08-10 2011-12-21 富士電機株式会社 保護膜形成方法およびその保護膜を備えた磁気記録媒体
JP4699140B2 (ja) 2005-08-29 2011-06-08 東京応化工業株式会社 パターン形成方法
US7572572B2 (en) * 2005-09-01 2009-08-11 Micron Technology, Inc. Methods for forming arrays of small, closely spaced features
US20070166648A1 (en) 2006-01-17 2007-07-19 International Business Machines Corporation Integrated lithography and etch for dual damascene structures
US7897058B2 (en) 2006-02-13 2011-03-01 Asml Netherlands B.V. Device manufacturing method and computer program product
US20070190762A1 (en) 2006-02-13 2007-08-16 Asml Netherlands B.V. Device manufacturing method and computer program product
KR100790999B1 (ko) * 2006-10-17 2008-01-03 삼성전자주식회사 더블 패터닝 공정을 이용하는 반도체 소자의 미세 패턴형성 방법
US8907456B2 (en) * 2007-03-21 2014-12-09 Olambda, Inc. Multi-material hard mask or prepatterned layer for use with multi-patterning photolithography
JP2011503899A (ja) 2007-11-16 2011-01-27 イー.ケー.シー.テクノロジー.インコーポレーテッド 半導体基板から金属ハードマスクエッチング残留物を除去するための組成物
KR100933868B1 (ko) * 2008-03-10 2009-12-24 주식회사 하이닉스반도체 마스크 패턴 형성 방법
US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
JP5558327B2 (ja) * 2010-12-10 2014-07-23 株式会社東芝 パターン形成方法、半導体装置の製造方法およびテンプレートの製造方法
KR101732936B1 (ko) * 2011-02-14 2017-05-08 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
KR20120092950A (ko) 2011-02-14 2012-08-22 에스케이하이닉스 주식회사 리소그래피-리소그래피-식각 공정에서의 오버레이 버니어 형성 방법
US9281207B2 (en) * 2011-02-28 2016-03-08 Inpria Corporation Solution processible hardmasks for high resolution lithography
US9684234B2 (en) 2011-03-24 2017-06-20 Uchicago Argonne, Llc Sequential infiltration synthesis for enhancing multiple-patterning lithography
US8409965B2 (en) * 2011-04-26 2013-04-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for LED with nano-patterned substrate
JP2012253056A (ja) * 2011-05-31 2012-12-20 Toshiba Corp 半導体装置の製造方法
TWI492298B (zh) * 2011-08-26 2015-07-11 應用材料股份有限公司 雙重圖案化蝕刻製程
JP6295198B2 (ja) 2011-10-10 2018-03-14 ブルーワー サイエンス アイ エヌ シー. リソグラフ処理のためのスピンオン炭素組成物
SG11201403060WA (en) * 2011-12-19 2014-09-26 Canon Nanotechnologies Inc Fabrication of seamless large area master templates for imprint lithography
US8551690B2 (en) * 2012-01-20 2013-10-08 Micron Technology, Inc. Methods of forming patterns
US8916337B2 (en) * 2012-02-22 2014-12-23 International Business Machines Corporation Dual hard mask lithography process
US8703386B2 (en) 2012-02-27 2014-04-22 International Business Machines Corporation Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications
CN104380194B (zh) * 2012-04-16 2019-05-31 布鲁尔科技公司 用于导向自组装的硅硬掩模层
JP6028384B2 (ja) * 2012-05-07 2016-11-16 大日本印刷株式会社 ナノインプリントリソグラフィ用テンプレートの製造方法
US8647981B1 (en) * 2012-08-31 2014-02-11 Micron Technology, Inc. Methods of forming patterns, and methods of forming integrated circuitry
US9679095B1 (en) 2013-02-19 2017-06-13 Mentor Graphics, A Siemens Business Layout decomposition for multiple patterning lithography
US9005875B2 (en) 2013-03-15 2015-04-14 Intel Corporation Pre-patterned hard mask for ultrafast lithographic imaging
JP2014239191A (ja) 2013-06-10 2014-12-18 富士通セミコンダクター株式会社 半導体装置の製造方法
US9176373B2 (en) 2013-07-31 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for decomposition of a single photoresist mask pattern into 3 photoresist mask patterns
US9310684B2 (en) * 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
US9372402B2 (en) 2013-09-13 2016-06-21 The Research Foundation For The State University Of New York Molecular organometallic resists for EUV
WO2015084523A1 (en) 2013-12-05 2015-06-11 Tokyo Electron Limited Direct current superposition freeze
US20150234272A1 (en) 2014-02-14 2015-08-20 Intel Corporation Metal oxide nanoparticles and photoresist compositions
WO2015126812A1 (en) 2014-02-23 2015-08-27 Tokyo Electron Limited Method for multiplying pattern density by crossing multiple patterned layers
KR102696070B1 (ko) 2014-10-23 2024-08-16 인프리아 코포레이션 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
EP4273625A3 (en) 2015-10-13 2024-02-28 Inpria Corporation Organotin oxide hydroxide patterning compositions, precursors, and patterning
US9996004B2 (en) * 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
CN108780739B (zh) 2016-03-11 2023-09-15 因普里亚公司 预图案化光刻模板、基于使用该模板的辐射图案化的工艺及形成该模板的工艺
KR102791311B1 (ko) 2016-08-12 2025-04-04 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
KR102918243B1 (ko) 2017-11-20 2026-01-26 인프리아 코포레이션 유기주석 클러스터, 유기주석 클러스터의 용액, 및 고해상도 패턴화에 대한 적용
TWI814552B (zh) 2018-04-05 2023-09-01 美商英培雅股份有限公司 錫十二聚物及具有強euv吸收的輻射可圖案化塗層
US12416861B2 (en) 2019-04-12 2025-09-16 Inpria Corporation Organometallic photoresist developer compositions and processing methods

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