JP2019087623A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 279
- 239000000758 substrate Substances 0.000 claims abstract description 110
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 27
- 229920005591 polysilicon Polymers 0.000 description 27
- 238000000034 method Methods 0.000 description 22
- 230000008569 process Effects 0.000 description 20
- 239000011229 interlayer Substances 0.000 description 14
- 230000008719 thickening Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 230000000630 rising effect Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Abstract
Description
特許文献1 特開2016−96222号公報
Claims (12)
- 第1導電型のドリフト領域を有する半導体基板と、
前記半導体基板の下面に形成されたカソード領域と、
前記半導体基板の下面に前記カソード領域が形成されたダイオード部と、
前記半導体基板の上面から前記ドリフト領域まで設けられ、一部分が前記ダイオード部に設けられ、他の一部分が前記ダイオード部外に設けられ、前記半導体基板の上面において前記ダイオード部から前記ダイオード部外まで、予め定められた延伸方向に延伸し連続して設けられる第1ダミートレンチ部と、
前記半導体基板の上面に設けられ、前記ダイオード部外において前記第1ダミートレンチ部と電気的に接続される第1引出し部と、
を備える半導体装置。 - 前記半導体基板に、前記半導体基板の上面視で、前記延伸方向に前記ダイオード部と隣接して設けられたトランジスタ部をさらに備え、
前記トランジスタ部は、前記第1ダミートレンチ部を有し、
前記第1ダミートレンチ部は、前記ダイオード部および前記トランジスタ部において、前記半導体基板の上面視で、前記延伸方向と直交する配列方向に、予め定められたトレンチ間ピッチで配列される、
請求項1に記載の半導体装置。 - 前記半導体基板の上面に設けられた第2引出し部をさらに備え、
前記トランジスタ部は、前記延伸方向に延伸し、前記半導体基板の上面から内部へ向かって設けられた第2ダミートレンチ部をさらに有し、
前記第2ダミートレンチ部は、前記第2引出し部と電気的に接続され、
前記第1引出し部および前記第2引出し部は、前記配列方向に配列される、
請求項2に記載の半導体装置。 - 前記トランジスタ部は、前記延伸方向に延伸し、前記半導体基板の上面から内部へ向かって設けられたゲートトレンチ部をさらに有し、
前記ゲートトレンチ部は、予め定められた前記トレンチ間ピッチと異なるトレンチ間ピッチで、前記配列方向に配列される、
請求項2または3に記載の半導体装置。 - 前記半導体基板の上面視で、前記ゲートトレンチ部の前記ダイオード部側の端部と、前記ダイオード部における前記第1ダミートレンチ部の端部との前記延伸方向の距離が、前記トランジスタ部における前記ゲートトレンチ部と、前記ゲートトレンチ部と隣接する前記第1ダミートレンチ部との前記配列方向のトレンチ間ピッチの2倍以下である、
請求項4に記載の半導体装置。 - 前記トランジスタ部は、前記半導体基板の上面に、前記ゲートトレンチ部と隣接し、前記延伸方向に複数配列されたエミッタ領域を有し、
前記半導体基板の上面視で、前記ゲートトレンチ部の前記ダイオード部側の端部と
前記トランジスタ部において最も前記ダイオード部側に設けられる前記エミッタ領域との前記延伸方向の距離が、前記ゲートトレンチ部の前記ダイオード部側の端部と反対側の端部と、前記ダイオード部から前記延伸方向に最も離れて設けられる前記エミッタ領域との前記延伸方向の距離よりも小さい、請求項4または5に記載の半導体装置。 - 前記トランジスタ部は、前記半導体基板の下面にコレクタ領域を有し、
前記カソード領域と前記コレクタ領域との境界が、前記半導体基板の上面視で、前記ゲートトレンチ部の前記ダイオード部側の端部と、前記ダイオード部における前記第1ダミートレンチ部の端部との前記延伸方向における中点よりも、前記トランジスタ部の側に位置する、
請求項4から6のいずれか一項に記載の半導体装置。 - 前記トランジスタ部は、前記半導体基板の下面にコレクタ領域を有し、
前記カソード領域と前記コレクタ領域との境界が、前記半導体基板の上面視で、前記ゲートトレンチ部の前記ダイオード部側の端部と、前記ダイオード部における前記第1ダミートレンチ部の端部との前記延伸方向における中点よりも、前記ダイオード部の側に位置する、
請求項4から6のいずれか一項に記載の半導体装置。 - 前記ダイオード部において、前記配列方向で隣接する前記第1ダミートレンチ部のトレンチ間ピッチが、予め定められた前記トレンチ間ピッチの1/2よりも小さい、請求項2または8に記載の半導体装置。
- 前記ダイオード部において、前記配列方向で隣接する前記第1ダミートレンチ部のトレンチ間ピッチが、予め定められた前記トレンチ間ピッチの1/2よりも大きい、請求項2または8に記載の半導体装置。
- 前記第1ダミートレンチ部は、前記ダイオード部において、前記半導体基板の上面視でU字形状を有する、請求項1から10のいずれか一項に記載の半導体装置。
- 前記第1ダミートレンチ部は、前記ダイオード部において、前記半導体基板の上面視で一筆書きの形状である、請求項11に記載の半導体装置。
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JP2017214256A JP7069646B2 (ja) | 2017-11-06 | 2017-11-06 | 半導体装置 |
US16/136,285 US10483357B2 (en) | 2017-11-06 | 2018-09-20 | Semiconductor device |
CN201811123099.9A CN109755239B (zh) | 2017-11-06 | 2018-09-26 | 半导体装置 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010050211A (ja) * | 2008-08-20 | 2010-03-04 | Denso Corp | 半導体装置の製造方法 |
WO2016006696A1 (ja) * | 2014-07-11 | 2016-01-14 | 新電元工業株式会社 | 半導体装置及び半導体装置の製造方法 |
US20160141400A1 (en) * | 2014-11-13 | 2016-05-19 | Mitsubishi Electric Corporation | Semiconductor device |
US20170236908A1 (en) * | 2016-02-16 | 2017-08-17 | Fuji Electric Co., Ltd. | Semiconductor device |
JP2017147435A (ja) * | 2016-02-16 | 2017-08-24 | 富士電機株式会社 | 半導体装置 |
WO2017146148A1 (ja) * | 2016-02-23 | 2017-08-31 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (9)
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Publication number | Priority date | Publication date | Assignee | Title |
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US20170040423A1 (en) * | 2014-07-11 | 2017-02-09 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
US20160141400A1 (en) * | 2014-11-13 | 2016-05-19 | Mitsubishi Electric Corporation | Semiconductor device |
JP2016096222A (ja) * | 2014-11-13 | 2016-05-26 | 三菱電機株式会社 | 半導体装置 |
US20170236908A1 (en) * | 2016-02-16 | 2017-08-17 | Fuji Electric Co., Ltd. | Semiconductor device |
JP2017147435A (ja) * | 2016-02-16 | 2017-08-24 | 富士電機株式会社 | 半導体装置 |
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