JP2019004030A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2019004030A
JP2019004030A JP2017117072A JP2017117072A JP2019004030A JP 2019004030 A JP2019004030 A JP 2019004030A JP 2017117072 A JP2017117072 A JP 2017117072A JP 2017117072 A JP2017117072 A JP 2017117072A JP 2019004030 A JP2019004030 A JP 2019004030A
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JP
Japan
Prior art keywords
layer
collector
region
drift
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2017117072A
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English (en)
Japanese (ja)
Other versions
JP2019004030A5 (enExample
Inventor
浩一 村川
Koichi Murakawa
浩一 村川
正清 住友
Masakiyo Sumitomo
正清 住友
高橋　茂樹
Shigeki Takahashi
茂樹 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2017117072A priority Critical patent/JP2019004030A/ja
Priority to PCT/JP2018/020231 priority patent/WO2018230312A1/ja
Publication of JP2019004030A publication Critical patent/JP2019004030A/ja
Publication of JP2019004030A5 publication Critical patent/JP2019004030A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2017117072A 2017-06-14 2017-06-14 半導体装置 Pending JP2019004030A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017117072A JP2019004030A (ja) 2017-06-14 2017-06-14 半導体装置
PCT/JP2018/020231 WO2018230312A1 (ja) 2017-06-14 2018-05-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017117072A JP2019004030A (ja) 2017-06-14 2017-06-14 半導体装置

Publications (2)

Publication Number Publication Date
JP2019004030A true JP2019004030A (ja) 2019-01-10
JP2019004030A5 JP2019004030A5 (enExample) 2019-09-19

Family

ID=64660825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017117072A Pending JP2019004030A (ja) 2017-06-14 2017-06-14 半導体装置

Country Status (2)

Country Link
JP (1) JP2019004030A (enExample)
WO (1) WO2018230312A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020148959A1 (ja) 2019-01-15 2020-07-23 ソニー株式会社 サーバおよび学習システム

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007055352A1 (ja) * 2005-11-14 2007-05-18 Fuji Electric Device Technology Co., Ltd. 半導体装置およびその製造方法
JP2012142537A (ja) * 2010-12-16 2012-07-26 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタとその製造方法
JP2013065735A (ja) * 2011-09-19 2013-04-11 Denso Corp 半導体装置
JP2013089874A (ja) * 2011-10-20 2013-05-13 Denso Corp 半導体装置
JP2015103697A (ja) * 2013-11-26 2015-06-04 三菱電機株式会社 半導体装置
JP2015177057A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体装置
JP2015213193A (ja) * 2015-07-21 2015-11-26 ルネサスエレクトロニクス株式会社 Ｉｇｂｔ
JP2016006891A (ja) * 2011-07-27 2016-01-14 トヨタ自動車株式会社 ダイオード、半導体装置およびｍｏｓｆｅｔ
JP2016111077A (ja) * 2014-12-03 2016-06-20 三菱電機株式会社 電力用半導体装置
EP3154091A1 (en) * 2015-10-07 2017-04-12 ABB Technology AG Reverse-conducting semiconductor device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007055352A1 (ja) * 2005-11-14 2007-05-18 Fuji Electric Device Technology Co., Ltd. 半導体装置およびその製造方法
JP2012142537A (ja) * 2010-12-16 2012-07-26 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタとその製造方法
JP2016006891A (ja) * 2011-07-27 2016-01-14 トヨタ自動車株式会社 ダイオード、半導体装置およびｍｏｓｆｅｔ
JP2013065735A (ja) * 2011-09-19 2013-04-11 Denso Corp 半導体装置
JP2013089874A (ja) * 2011-10-20 2013-05-13 Denso Corp 半導体装置
JP2015103697A (ja) * 2013-11-26 2015-06-04 三菱電機株式会社 半導体装置
JP2015177057A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体装置
JP2016111077A (ja) * 2014-12-03 2016-06-20 三菱電機株式会社 電力用半導体装置
JP2015213193A (ja) * 2015-07-21 2015-11-26 ルネサスエレクトロニクス株式会社 Ｉｇｂｔ
EP3154091A1 (en) * 2015-10-07 2017-04-12 ABB Technology AG Reverse-conducting semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020148959A1 (ja) 2019-01-15 2020-07-23 ソニー株式会社 サーバおよび学習システム

Also Published As

Publication number Publication date
WO2018230312A1 (ja) 2018-12-20

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