JP2019004030A5 - - Google Patents

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Publication number
JP2019004030A5
JP2019004030A5 JP2017117072A JP2017117072A JP2019004030A5 JP 2019004030 A5 JP2019004030 A5 JP 2019004030A5 JP 2017117072 A JP2017117072 A JP 2017117072A JP 2017117072 A JP2017117072 A JP 2017117072A JP 2019004030 A5 JP2019004030 A5 JP 2019004030A5
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JP
Japan
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layer
collector
conductivity type
drift
cathode
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Pending
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JP2017117072A
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English (en)
Japanese (ja)
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JP2019004030A (ja
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Priority to JP2017117072A priority Critical patent/JP2019004030A/ja
Priority claimed from JP2017117072A external-priority patent/JP2019004030A/ja
Priority to PCT/JP2018/020231 priority patent/WO2018230312A1/ja
Publication of JP2019004030A publication Critical patent/JP2019004030A/ja
Publication of JP2019004030A5 publication Critical patent/JP2019004030A5/ja
Pending legal-status Critical Current

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JP2017117072A 2017-06-14 2017-06-14 半導体装置 Pending JP2019004030A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017117072A JP2019004030A (ja) 2017-06-14 2017-06-14 半導体装置
PCT/JP2018/020231 WO2018230312A1 (ja) 2017-06-14 2018-05-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017117072A JP2019004030A (ja) 2017-06-14 2017-06-14 半導体装置

Publications (2)

Publication Number Publication Date
JP2019004030A JP2019004030A (ja) 2019-01-10
JP2019004030A5 true JP2019004030A5 (enExample) 2019-09-19

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ID=64660825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017117072A Pending JP2019004030A (ja) 2017-06-14 2017-06-14 半導体装置

Country Status (2)

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JP (1) JP2019004030A (enExample)
WO (1) WO2018230312A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113168588B (zh) 2019-01-15 2023-11-24 索尼集团公司 服务器以及学习系统
JP7889402B2 (ja) * 2023-07-25 2026-07-14 株式会社デンソー 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101305470B (zh) * 2005-11-14 2010-12-08 富士电机系统株式会社 半导体器件及其制造方法
JP2012142537A (ja) * 2010-12-16 2012-07-26 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタとその製造方法
JP6001735B2 (ja) * 2011-07-27 2016-10-05 株式会社豊田中央研究所 Ｍｏｓｆｅｔ
JP5737102B2 (ja) * 2011-09-19 2015-06-17 株式会社デンソー 半導体装置
JP5751125B2 (ja) * 2011-10-20 2015-07-22 株式会社デンソー 半導体装置
JP6119577B2 (ja) * 2013-11-26 2017-04-26 三菱電機株式会社 半導体装置
JP6158123B2 (ja) * 2014-03-14 2017-07-05 株式会社東芝 半導体装置
JP6261494B2 (ja) * 2014-12-03 2018-01-17 三菱電機株式会社 電力用半導体装置
JP2015213193A (ja) * 2015-07-21 2015-11-26 ルネサスエレクトロニクス株式会社 Ｉｇｂｔ
EP3154091A1 (en) * 2015-10-07 2017-04-12 ABB Technology AG Reverse-conducting semiconductor device

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