JP2014022708A5 - - Google Patents
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- JP2014022708A5 JP2014022708A5 JP2012171456A JP2012171456A JP2014022708A5 JP 2014022708 A5 JP2014022708 A5 JP 2014022708A5 JP 2012171456 A JP2012171456 A JP 2012171456A JP 2012171456 A JP2012171456 A JP 2012171456A JP 2014022708 A5 JP2014022708 A5 JP 2014022708A5
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- Prior art keywords
- semiconductor
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- semiconductor layer
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 claims description 74
- 239000000969 carrier Substances 0.000 claims description 5
- 230000015556 catabolic process Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000006731 degradation reaction Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012171456A JP2014022708A (ja) | 2012-07-17 | 2012-07-17 | 半導体装置とその動作方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012171456A JP2014022708A (ja) | 2012-07-17 | 2012-07-17 | 半導体装置とその動作方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016207074A Division JP6232687B2 (ja) | 2016-10-21 | 2016-10-21 | 半導体装置とその動作方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014022708A JP2014022708A (ja) | 2014-02-03 |
| JP2014022708A5 true JP2014022708A5 (enExample) | 2016-09-08 |
Family
ID=50197228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012171456A Pending JP2014022708A (ja) | 2012-07-17 | 2012-07-17 | 半導体装置とその動作方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2014022708A (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10115815B2 (en) | 2012-12-28 | 2018-10-30 | Cree, Inc. | Transistor structures having a deep recessed P+ junction and methods for making same |
| US9530844B2 (en) | 2012-12-28 | 2016-12-27 | Cree, Inc. | Transistor structures having reduced electrical field at the gate oxide and methods for making same |
| US20150263145A1 (en) * | 2014-03-14 | 2015-09-17 | Cree, Inc. | Igbt structure for wide band-gap semiconductor materials |
| JP2015207588A (ja) | 2014-04-17 | 2015-11-19 | ローム株式会社 | 半導体装置 |
| DE102014226161B4 (de) * | 2014-12-17 | 2017-10-26 | Infineon Technologies Ag | Halbleitervorrichtung mit Überlaststrombelastbarkeit |
| JP2016127177A (ja) * | 2015-01-06 | 2016-07-11 | 住友電気工業株式会社 | 炭化珪素基板、炭化珪素半導体装置および炭化珪素基板の製造方法 |
| JP6854598B2 (ja) | 2016-07-06 | 2021-04-07 | ローム株式会社 | 半導体装置 |
| WO2018016543A1 (ja) | 2016-07-19 | 2018-01-25 | 富士電機株式会社 | 半導体装置 |
| WO2018139172A1 (ja) * | 2017-01-25 | 2018-08-02 | 株式会社日立製作所 | 電力変換装置及び電力変換方法 |
| DE112018002905T5 (de) * | 2017-06-09 | 2020-02-20 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und verfahren zur herstellung einerhalbleitervorrichtung |
| CN107749420B (zh) * | 2017-11-20 | 2023-09-01 | 电子科技大学 | 一种逆阻型igbt |
| US11489069B2 (en) | 2017-12-21 | 2022-11-01 | Wolfspeed, Inc. | Vertical semiconductor device with improved ruggedness |
| US10615274B2 (en) | 2017-12-21 | 2020-04-07 | Cree, Inc. | Vertical semiconductor device with improved ruggedness |
| CN110504300B (zh) * | 2019-08-19 | 2023-02-07 | 广东美的制冷设备有限公司 | 绝缘栅极晶体管及其制备方法和应用 |
| CN111697070A (zh) * | 2020-06-29 | 2020-09-22 | 电子科技大学 | 一种逆导型igbt器件 |
| CN119943694B (zh) * | 2024-12-31 | 2025-12-12 | 宏茂微电子(上海)有限公司 | 一种关于晶圆背面减薄加工损伤层的评估方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2864629B2 (ja) * | 1990-03-05 | 1999-03-03 | 富士電機株式会社 | 伝導度変調型ｍｏｓｆｅｔ |
| JP5157201B2 (ja) * | 2006-03-22 | 2013-03-06 | 株式会社デンソー | 半導体装置 |
| JP2011187693A (ja) * | 2010-03-09 | 2011-09-22 | Toshiba Corp | 半導体装置 |
| JP2012099630A (ja) * | 2010-11-02 | 2012-05-24 | Panasonic Corp | 半導体装置および電力変換器 |
-
2012
- 2012-07-17 JP JP2012171456A patent/JP2014022708A/ja active Pending
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