JP2014022708A - 半導体装置とその動作方法 - Google Patents

半導体装置とその動作方法 Download PDF

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JP2014022708A
JP2014022708A JP2012171456A JP2012171456A JP2014022708A JP 2014022708 A JP2014022708 A JP 2014022708A JP 2012171456 A JP2012171456 A JP 2012171456A JP 2012171456 A JP2012171456 A JP 2012171456A JP 2014022708 A JP2014022708 A JP 2014022708A
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semiconductor
voltage
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reverse conducting
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JP2014022708A5 (enExample
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Yoshitaka Sugawara
良孝 菅原
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2012171456A 2012-07-17 2012-07-17 半導体装置とその動作方法 Pending JP2014022708A (ja)

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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015207588A (ja) * 2014-04-17 2015-11-19 ローム株式会社 半導体装置
DE102014226161A1 (de) * 2014-12-17 2016-07-07 Infineon Technologies Ag Halbleitervorrichtung mit Überlaststrombelastbarkeit
JP2016127177A (ja) * 2015-01-06 2016-07-11 住友電気工業株式会社 炭化珪素基板、炭化珪素半導体装置および炭化珪素基板の製造方法
JP2017508300A (ja) * 2014-03-14 2017-03-23 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． ワイドバンドギャップ半導体材料用ｉｇｂｔ構造
JP2018006648A (ja) * 2016-07-06 2018-01-11 ローム株式会社 半導体装置
CN107749420A (zh) * 2017-11-20 2018-03-02 电子科技大学 一种逆阻型igbt
JPWO2018139172A1 (ja) * 2017-01-25 2019-11-07 株式会社日立製作所 電力変換装置及び電力変換方法
CN110504300A (zh) * 2019-08-19 2019-11-26 广东美的制冷设备有限公司 绝缘栅极晶体管及其制备方法和应用
US10651302B2 (en) 2016-07-19 2020-05-12 Fuji Electric Co., Ltd. Semiconductor device
CN111697070A (zh) * 2020-06-29 2020-09-22 电子科技大学 一种逆导型igbt器件
US10840367B2 (en) 2012-12-28 2020-11-17 Cree, Inc. Transistor structures having reduced electrical field at the gate oxide and methods for making same
US10886396B2 (en) 2012-12-28 2021-01-05 Cree, Inc. Transistor structures having a deep recessed P+ junction and methods for making same
JP2021052208A (ja) * 2017-06-09 2021-04-01 富士電機株式会社 半導体装置および半導体装置の製造方法
US11417760B2 (en) 2017-12-21 2022-08-16 Wolfspeed, Inc. Vertical semiconductor device with improved ruggedness
US11489069B2 (en) 2017-12-21 2022-11-01 Wolfspeed, Inc. Vertical semiconductor device with improved ruggedness
CN119943694A (zh) * 2024-12-31 2025-05-06 宏茂微电子(上海)有限公司 一种关于晶圆背面减薄加工损伤层的评估方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03254159A (ja) * 1990-03-05 1991-11-13 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
JP2007288158A (ja) * 2006-03-22 2007-11-01 Denso Corp 半導体装置およびその設計方法
JP2011187693A (ja) * 2010-03-09 2011-09-22 Toshiba Corp 半導体装置
JP2012099630A (ja) * 2010-11-02 2012-05-24 Panasonic Corp 半導体装置および電力変換器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03254159A (ja) * 1990-03-05 1991-11-13 Fuji Electric Co Ltd 伝導度変調型ｍｏｓｆｅｔ
JP2007288158A (ja) * 2006-03-22 2007-11-01 Denso Corp 半導体装置およびその設計方法
JP2011187693A (ja) * 2010-03-09 2011-09-22 Toshiba Corp 半導体装置
JP2012099630A (ja) * 2010-11-02 2012-05-24 Panasonic Corp 半導体装置および電力変換器

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10886396B2 (en) 2012-12-28 2021-01-05 Cree, Inc. Transistor structures having a deep recessed P+ junction and methods for making same
US10840367B2 (en) 2012-12-28 2020-11-17 Cree, Inc. Transistor structures having reduced electrical field at the gate oxide and methods for making same
JP2017508300A (ja) * 2014-03-14 2017-03-23 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． ワイドバンドギャップ半導体材料用ｉｇｂｔ構造
US10062760B2 (en) 2014-04-17 2018-08-28 Rohm Co., Ltd. Semiconductor device
JP2015207588A (ja) * 2014-04-17 2015-11-19 ローム株式会社 半導体装置
US10784349B2 (en) 2014-04-17 2020-09-22 Rohm Co., Ltd. Semiconductor device
US11410989B2 (en) 2014-12-17 2022-08-09 Infineon Technologies Ag Semiconductor device having overload current carrying capability
DE102014226161B4 (de) * 2014-12-17 2017-10-26 Infineon Technologies Ag Halbleitervorrichtung mit Überlaststrombelastbarkeit
CN109599432A (zh) * 2014-12-17 2019-04-09 英飞凌科技股份有限公司 半导体器件
US11721689B2 (en) 2014-12-17 2023-08-08 Infineon Technologies Ag Semiconductor device having a semiconductor channel region and a semiconductor auxiliary region
DE102014226161A1 (de) * 2014-12-17 2016-07-07 Infineon Technologies Ag Halbleitervorrichtung mit Überlaststrombelastbarkeit
CN109599432B (zh) * 2014-12-17 2022-04-19 英飞凌科技股份有限公司 半导体器件
US10651165B2 (en) 2014-12-17 2020-05-12 Infineon Technologies Ag Semiconductor device having overload current carrying capability
JP2016127177A (ja) * 2015-01-06 2016-07-11 住友電気工業株式会社 炭化珪素基板、炭化珪素半導体装置および炭化珪素基板の製造方法
JP2018006648A (ja) * 2016-07-06 2018-01-11 ローム株式会社 半導体装置
US10978580B2 (en) 2016-07-06 2021-04-13 Rohm Co., Ltd. Insulated gate bipolar transistor and diode
US11444187B2 (en) 2016-07-06 2022-09-13 Rohm Co., Ltd. Insulated gate bipolar transistor and diode
US10651302B2 (en) 2016-07-19 2020-05-12 Fuji Electric Co., Ltd. Semiconductor device
JPWO2018139172A1 (ja) * 2017-01-25 2019-11-07 株式会社日立製作所 電力変換装置及び電力変換方法
JP7078099B2 (ja) 2017-06-09 2022-05-31 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2021052208A (ja) * 2017-06-09 2021-04-01 富士電機株式会社 半導体装置および半導体装置の製造方法
CN107749420A (zh) * 2017-11-20 2018-03-02 电子科技大学 一种逆阻型igbt
CN107749420B (zh) * 2017-11-20 2023-09-01 电子科技大学 一种逆阻型igbt
US11489069B2 (en) 2017-12-21 2022-11-01 Wolfspeed, Inc. Vertical semiconductor device with improved ruggedness
US11417760B2 (en) 2017-12-21 2022-08-16 Wolfspeed, Inc. Vertical semiconductor device with improved ruggedness
US12087854B2 (en) 2017-12-21 2024-09-10 Wolfspeed, Inc. Vertical semiconductor device with improved ruggedness
CN110504300B (zh) * 2019-08-19 2023-02-07 广东美的制冷设备有限公司 绝缘栅极晶体管及其制备方法和应用
CN110504300A (zh) * 2019-08-19 2019-11-26 广东美的制冷设备有限公司 绝缘栅极晶体管及其制备方法和应用
CN111697070A (zh) * 2020-06-29 2020-09-22 电子科技大学 一种逆导型igbt器件
CN119943694A (zh) * 2024-12-31 2025-05-06 宏茂微电子(上海)有限公司 一种关于晶圆背面减薄加工损伤层的评估方法
CN119943694B (zh) * 2024-12-31 2025-12-12 宏茂微电子(上海)有限公司 一种关于晶圆背面减薄加工损伤层的评估方法

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