JP2018186118A - シリコンウエーハの研磨方法 - Google Patents
シリコンウエーハの研磨方法 Download PDFInfo
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- JP2018186118A JP2018186118A JP2017085270A JP2017085270A JP2018186118A JP 2018186118 A JP2018186118 A JP 2018186118A JP 2017085270 A JP2017085270 A JP 2017085270A JP 2017085270 A JP2017085270 A JP 2017085270A JP 2018186118 A JP2018186118 A JP 2018186118A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 36
- 239000010703 silicon Substances 0.000 title claims abstract description 36
- 238000007517 polishing process Methods 0.000 title abstract description 5
- 238000005498 polishing Methods 0.000 claims abstract description 211
- 239000004744 fabric Substances 0.000 claims abstract description 82
- 239000007864 aqueous solution Substances 0.000 claims abstract description 19
- 239000006061 abrasive grain Substances 0.000 claims abstract description 17
- 229920000642 polymer Polymers 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 16
- 239000000498 cooling water Substances 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 abstract description 17
- 239000000243 solution Substances 0.000 abstract description 3
- 239000003513 alkali Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 34
- 239000002002 slurry Substances 0.000 description 8
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 4
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000008119 colloidal silica Substances 0.000 description 4
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
【解決手段】 定盤に貼り付けた研磨布上に砥粒を含むアルカリ水溶液を供給しつつ、前記研磨布に研磨ヘッドが保持するシリコンウエーハの表面を摺接させて研磨する第一研磨工程、及び、前記研磨布に砥粒を含まずに高分子ポリマーを含むアルカリ水溶液を供給しつつ、前記研磨布に前記シリコンウエーハの表面を摺接させて研磨する第二研磨工程とを有するシリコンウエーハの研磨方法であって、前記第二研磨工程中の前記研磨布の表面温度を、前記第一研磨工程中の前記研磨布の表面温度よりも2℃以上高くなるように、前記研磨布の表面温度を制御して前記シリコンウエーハの研磨を行うことを特徴とするシリコンウエーハの研磨方法。
【選択図】図1
Description
研磨ヘッド、スラリーを供給するノズルを備えた研磨装置を用い、定盤や研磨ヘッドを回
転させ、また研磨布上にスラリーを供給しつつ、研磨ヘッドによりウエーハの表面を研磨
布に摺接して研磨を行っている(特許文献1参照)。
図2に示すような、定盤2に貼り付けた研磨布1上にノズル4からスラリーを供給しつつ、その研磨布1に研磨ヘッド3が保持するウェーハWの表面を摺接させて研磨する片面研磨機10を使用した。研磨布1としては、不織布を用いた。研磨スラリーには、第一研磨工程にコロイダルシリカを含むKOH水溶液を、第二研磨工程に分子量100万のHEC(ヒドロキシエチルセルロース)を含むアンモニア水溶液を用いた。
Claims (3)
- 定盤に貼り付けた研磨布上に砥粒を含むアルカリ水溶液を供給しつつ、前記研磨布に研磨ヘッドが保持するシリコンウエーハの表面を摺接させて研磨する第一研磨工程、及び、前記研磨布に砥粒を含まずに高分子ポリマーを含むアルカリ水溶液を供給しつつ、前記研磨布に前記シリコンウエーハの表面を摺接させて研磨する第二研磨工程とを有するシリコンウエーハの研磨方法であって、
前記第二研磨工程中の前記研磨布の表面温度を、前記第一研磨工程中の前記研磨布の表面温度よりも2℃以上高くなるように、前記研磨布の表面温度を制御して前記シリコンウエーハの研磨を行うことを特徴とするシリコンウエーハの研磨方法。 - 前記研磨布の表面温度の制御を、前記研磨布の表面温度を赤外線により取得しながら行うことを特徴とする請求項1に記載のシリコンウエーハの研磨方法。
- 前記研磨布の表面温度の制御を、前記定盤の回転数、前記定盤に流れる冷却水の流量及び温度の少なくともいずれかを制御することにより行うことを特徴とする請求項1又は請求項2に記載のシリコンウエーハの研磨方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017085270A JP6635088B2 (ja) | 2017-04-24 | 2017-04-24 | シリコンウエーハの研磨方法 |
US16/603,886 US10913137B2 (en) | 2017-04-24 | 2018-03-16 | Method for polishing silicon wafer |
DE112018001605.6T DE112018001605T5 (de) | 2017-04-24 | 2018-03-16 | Verfahren zum Polieren von Silizium- Wafern |
PCT/JP2018/010367 WO2018198583A1 (ja) | 2017-04-24 | 2018-03-16 | シリコンウエーハの研磨方法 |
SG11201909787S SG11201909787SA (en) | 2017-04-24 | 2018-03-16 | Method for polishing silicon wafer |
KR1020197031133A KR102382812B1 (ko) | 2017-04-24 | 2018-03-16 | 실리콘웨이퍼의 연마방법 |
CN201880026667.5A CN110546740B (zh) | 2017-04-24 | 2018-03-16 | 硅晶圆的研磨方法 |
TW107109260A TWI754025B (zh) | 2017-04-24 | 2018-03-19 | 矽晶圓的研磨方法 |
Applications Claiming Priority (1)
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JP2017085270A JP6635088B2 (ja) | 2017-04-24 | 2017-04-24 | シリコンウエーハの研磨方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018186118A true JP2018186118A (ja) | 2018-11-22 |
JP6635088B2 JP6635088B2 (ja) | 2020-01-22 |
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JP2017085270A Active JP6635088B2 (ja) | 2017-04-24 | 2017-04-24 | シリコンウエーハの研磨方法 |
Country Status (8)
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US (1) | US10913137B2 (ja) |
JP (1) | JP6635088B2 (ja) |
KR (1) | KR102382812B1 (ja) |
CN (1) | CN110546740B (ja) |
DE (1) | DE112018001605T5 (ja) |
SG (1) | SG11201909787SA (ja) |
TW (1) | TWI754025B (ja) |
WO (1) | WO2018198583A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112022002509T5 (de) | 2021-05-10 | 2024-02-29 | Sumco Corporation | Verfahren zur Erzeugung einer Korrelationsrelationsformel zur Bestimmung der Polierbedingung, Verfahren zur Bestimmung der Polierbedingung und Verfahren zur Herstellung von Halbleiterwafern |
JP7467188B2 (ja) | 2020-03-24 | 2024-04-15 | キオクシア株式会社 | Cmp方法及びcmp用洗浄剤 |
Families Citing this family (5)
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JP6635088B2 (ja) * | 2017-04-24 | 2020-01-22 | 信越半導体株式会社 | シリコンウエーハの研磨方法 |
CN112218737B (zh) * | 2018-09-14 | 2023-06-06 | 胜高股份有限公司 | 晶片的镜面倒角方法、晶片的制造方法及晶片 |
CN111618707A (zh) * | 2020-05-20 | 2020-09-04 | 清华大学 | 晶圆磨削方法及晶圆磨削系统 |
CN112405330B (zh) * | 2020-12-08 | 2021-09-07 | 杭州众硅电子科技有限公司 | 一种抛光装置 |
CN112652526A (zh) * | 2020-12-14 | 2021-04-13 | 西安奕斯伟硅片技术有限公司 | 一种硅片抛光方法和硅片 |
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2017
- 2017-04-24 JP JP2017085270A patent/JP6635088B2/ja active Active
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2018
- 2018-03-16 CN CN201880026667.5A patent/CN110546740B/zh active Active
- 2018-03-16 DE DE112018001605.6T patent/DE112018001605T5/de active Pending
- 2018-03-16 SG SG11201909787S patent/SG11201909787SA/en unknown
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Cited By (3)
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JP7467188B2 (ja) | 2020-03-24 | 2024-04-15 | キオクシア株式会社 | Cmp方法及びcmp用洗浄剤 |
US11986920B2 (en) | 2020-03-24 | 2024-05-21 | Kioxia Corporation | Polishing method, polishing agent and cleaning agent for polishing |
DE112022002509T5 (de) | 2021-05-10 | 2024-02-29 | Sumco Corporation | Verfahren zur Erzeugung einer Korrelationsrelationsformel zur Bestimmung der Polierbedingung, Verfahren zur Bestimmung der Polierbedingung und Verfahren zur Herstellung von Halbleiterwafern |
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CN110546740A (zh) | 2019-12-06 |
TWI754025B (zh) | 2022-02-01 |
CN110546740B (zh) | 2023-05-26 |
US10913137B2 (en) | 2021-02-09 |
DE112018001605T5 (de) | 2020-01-16 |
SG11201909787SA (en) | 2019-11-28 |
WO2018198583A1 (ja) | 2018-11-01 |
KR20190142338A (ko) | 2019-12-26 |
JP6635088B2 (ja) | 2020-01-22 |
KR102382812B1 (ko) | 2022-04-05 |
US20200114488A1 (en) | 2020-04-16 |
TW201839837A (zh) | 2018-11-01 |
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