CN112652526A - 一种硅片抛光方法和硅片 - Google Patents
一种硅片抛光方法和硅片 Download PDFInfo
- Publication number
- CN112652526A CN112652526A CN202011471018.1A CN202011471018A CN112652526A CN 112652526 A CN112652526 A CN 112652526A CN 202011471018 A CN202011471018 A CN 202011471018A CN 112652526 A CN112652526 A CN 112652526A
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- grinding
- ground
- polymer
- polishing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 134
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 134
- 239000010703 silicon Substances 0.000 title claims abstract description 134
- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000005498 polishing Methods 0.000 title claims abstract description 39
- 229920000642 polymer Polymers 0.000 claims abstract description 38
- 239000007788 liquid Substances 0.000 claims abstract description 4
- 238000007517 polishing process Methods 0.000 claims description 8
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 4
- 238000003825 pressing Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011471018.1A CN112652526A (zh) | 2020-12-14 | 2020-12-14 | 一种硅片抛光方法和硅片 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011471018.1A CN112652526A (zh) | 2020-12-14 | 2020-12-14 | 一种硅片抛光方法和硅片 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN112652526A true CN112652526A (zh) | 2021-04-13 |
Family
ID=75354100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011471018.1A Pending CN112652526A (zh) | 2020-12-14 | 2020-12-14 | 一种硅片抛光方法和硅片 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112652526A (zh) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011044606A (ja) * | 2009-08-21 | 2011-03-03 | Sumco Corp | エピタキシャルシリコンウェーハの製造方法 |
JP2011042536A (ja) * | 2009-08-21 | 2011-03-03 | Sumco Corp | エピタキシャルシリコンウェーハの製造方法 |
JP2013021291A (ja) * | 2011-06-14 | 2013-01-31 | Fujimi Inc | 研磨用組成物 |
US20130032573A1 (en) * | 2010-04-30 | 2013-02-07 | Sumco Corporation | Method for polishing silicon wafer and polishing liquid therefor |
US20130095660A1 (en) * | 2010-07-02 | 2013-04-18 | Sumco Corporation | Method for polishing silicon wafer |
CN104620362A (zh) * | 2012-11-13 | 2015-05-13 | 信越半导体株式会社 | 双面研磨方法 |
CN107398780A (zh) * | 2016-05-18 | 2017-11-28 | 上海新昇半导体科技有限公司 | 一种晶圆的双面抛光方法 |
CN110546740A (zh) * | 2017-04-24 | 2019-12-06 | 信越半导体株式会社 | 硅晶圆的研磨方法 |
-
2020
- 2020-12-14 CN CN202011471018.1A patent/CN112652526A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011044606A (ja) * | 2009-08-21 | 2011-03-03 | Sumco Corp | エピタキシャルシリコンウェーハの製造方法 |
JP2011042536A (ja) * | 2009-08-21 | 2011-03-03 | Sumco Corp | エピタキシャルシリコンウェーハの製造方法 |
US20130032573A1 (en) * | 2010-04-30 | 2013-02-07 | Sumco Corporation | Method for polishing silicon wafer and polishing liquid therefor |
US20130095660A1 (en) * | 2010-07-02 | 2013-04-18 | Sumco Corporation | Method for polishing silicon wafer |
JP2013021291A (ja) * | 2011-06-14 | 2013-01-31 | Fujimi Inc | 研磨用組成物 |
CN104620362A (zh) * | 2012-11-13 | 2015-05-13 | 信越半导体株式会社 | 双面研磨方法 |
CN107398780A (zh) * | 2016-05-18 | 2017-11-28 | 上海新昇半导体科技有限公司 | 一种晶圆的双面抛光方法 |
CN110546740A (zh) * | 2017-04-24 | 2019-12-06 | 信越半导体株式会社 | 硅晶圆的研磨方法 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20220627 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. |
|
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |