JP2018098266A - 光電変換装置、光電変換装置の製造方法およびカメラ - Google Patents

光電変換装置、光電変換装置の製造方法およびカメラ Download PDF

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Publication number
JP2018098266A
JP2018098266A JP2016238781A JP2016238781A JP2018098266A JP 2018098266 A JP2018098266 A JP 2018098266A JP 2016238781 A JP2016238781 A JP 2016238781A JP 2016238781 A JP2016238781 A JP 2016238781A JP 2018098266 A JP2018098266 A JP 2018098266A
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Prior art keywords
photoelectric conversion
conversion device
impurity
region
semiconductor substrate
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Pending
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JP2016238781A
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Japanese (ja)
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JP2018098266A5 (enExample
Inventor
敏弘 庄山
Toshihiro Shoyama
敏弘 庄山
弘 ▲高▼草木
弘 ▲高▼草木
Hiroshi Takakusaki
翼 金田
Tsubasa Kaneda
翼 金田
小川　俊之
Toshiyuki Ogawa
俊之 小川
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Canon Inc
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Canon Inc
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Priority to JP2016238781A priority Critical patent/JP2018098266A/ja
Priority to US15/825,443 priority patent/US10340400B2/en
Priority to CN201711289553.3A priority patent/CN108183113B/zh
Publication of JP2018098266A publication Critical patent/JP2018098266A/ja
Publication of JP2018098266A5 publication Critical patent/JP2018098266A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/041—Making n- or p-doped regions
    • H01L21/0415—Making n- or p-doped regions using ion implantation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP2016238781A 2016-12-08 2016-12-08 光電変換装置、光電変換装置の製造方法およびカメラ Pending JP2018098266A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016238781A JP2018098266A (ja) 2016-12-08 2016-12-08 光電変換装置、光電変換装置の製造方法およびカメラ
US15/825,443 US10340400B2 (en) 2016-12-08 2017-11-29 Photoelectric conversion device, method of manufacturing the same, and camera
CN201711289553.3A CN108183113B (zh) 2016-12-08 2017-12-08 光电转换设备、相机、制造半导体基板的方法以及制造光电转换设备的方法

Applications Claiming Priority (1)

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JP2016238781A JP2018098266A (ja) 2016-12-08 2016-12-08 光電変換装置、光電変換装置の製造方法およびカメラ

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JP2018098266A5 JP2018098266A5 (enExample) 2020-01-23

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025142039A1 (ja) * 2023-12-26 2025-07-03 パナソニックＩｐマネジメント株式会社 撮像装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019102494A (ja) 2017-11-28 2019-06-24 キヤノン株式会社 光電変換装置およびその製造方法、機器
JP7084735B2 (ja) * 2018-01-31 2022-06-15 キヤノン株式会社 半導体装置の製造方法
CN110556390B (zh) 2018-05-31 2024-09-27 松下知识产权经营株式会社 摄像装置

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JP2004165225A (ja) * 2002-11-08 2004-06-10 Sony Corp 半導体基板の製造方法、固体撮像装置の製造方法及び固体撮像装置用の選別方法
JP2006196769A (ja) * 2005-01-14 2006-07-27 Sony Corp 半導体装置及びその製造方法
KR20090111292A (ko) * 2008-04-21 2009-10-26 소니 가부시끼 가이샤 고체 촬상 장치와 그 제조 방법, 및 전자 기기
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JP2010103318A (ja) * 2008-10-23 2010-05-06 Sharp Corp 半導体基板およびその製造方法、固体撮像素子
JP2011029604A (ja) * 2009-06-26 2011-02-10 Canon Inc 光電変換装置の製造方法
JP2012049400A (ja) * 2010-08-27 2012-03-08 Canon Inc 光センサの製造方法、光センサ及びカメラ
JP2013077826A (ja) * 2012-12-03 2013-04-25 Sony Corp 固体撮像装置及びカメラ
JP2013118573A (ja) * 2011-12-05 2013-06-13 Nikon Corp 撮像装置
JP2014094851A (ja) * 2012-11-08 2014-05-22 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法、シリコン単結晶ウェーハの製造方法、及びシリコン単結晶ウェーハ
JP2014192424A (ja) * 2013-03-28 2014-10-06 Panasonic Corp 太陽電池基板の表面処理方法
JP2015204316A (ja) * 2014-04-11 2015-11-16 信越半導体株式会社 シリコンウェーハ及びその製造方法
JP2016162079A (ja) * 2015-02-27 2016-09-05 富士通株式会社 表示制御方法、表示制御プログラム、及び情報処理装置

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JP3384506B2 (ja) 1993-03-30 2003-03-10 ソニー株式会社 半導体基板の製造方法
JPH06342798A (ja) 1993-06-01 1994-12-13 Matsushita Electron Corp 半導体装置及びその製造方法
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JP2002134511A (ja) * 2000-08-16 2002-05-10 Sony Corp 半導体基板の製造方法および固体撮像装置の製造方法
JP2004165225A (ja) * 2002-11-08 2004-06-10 Sony Corp 半導体基板の製造方法、固体撮像装置の製造方法及び固体撮像装置用の選別方法
JP2006196769A (ja) * 2005-01-14 2006-07-27 Sony Corp 半導体装置及びその製造方法
KR20090111292A (ko) * 2008-04-21 2009-10-26 소니 가부시끼 가이샤 고체 촬상 장치와 그 제조 방법, 및 전자 기기
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JP2010103318A (ja) * 2008-10-23 2010-05-06 Sharp Corp 半導体基板およびその製造方法、固体撮像素子
JP2011029604A (ja) * 2009-06-26 2011-02-10 Canon Inc 光電変換装置の製造方法
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JP2013118573A (ja) * 2011-12-05 2013-06-13 Nikon Corp 撮像装置
JP2014094851A (ja) * 2012-11-08 2014-05-22 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法、シリコン単結晶ウェーハの製造方法、及びシリコン単結晶ウェーハ
JP2013077826A (ja) * 2012-12-03 2013-04-25 Sony Corp 固体撮像装置及びカメラ
JP2014192424A (ja) * 2013-03-28 2014-10-06 Panasonic Corp 太陽電池基板の表面処理方法
JP2015204316A (ja) * 2014-04-11 2015-11-16 信越半導体株式会社 シリコンウェーハ及びその製造方法
JP2016162079A (ja) * 2015-02-27 2016-09-05 富士通株式会社 表示制御方法、表示制御プログラム、及び情報処理装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025142039A1 (ja) * 2023-12-26 2025-07-03 パナソニックＩｐマネジメント株式会社 撮像装置

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US20180166591A1 (en) 2018-06-14
US10340400B2 (en) 2019-07-02
CN108183113A (zh) 2018-06-19
CN108183113B (zh) 2022-03-04

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