CN108183113B - 光电转换设备、相机、制造半导体基板的方法以及制造光电转换设备的方法 - Google Patents
光电转换设备、相机、制造半导体基板的方法以及制造光电转换设备的方法 Download PDFInfo
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- CN108183113B CN108183113B CN201711289553.3A CN201711289553A CN108183113B CN 108183113 B CN108183113 B CN 108183113B CN 201711289553 A CN201711289553 A CN 201711289553A CN 108183113 B CN108183113 B CN 108183113B
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/041—Making n- or p-doped regions
- H01L21/0415—Making n- or p-doped regions using ion implantation
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
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- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-238781 | 2016-12-08 | ||
| JP2016238781A JP2018098266A (ja) | 2016-12-08 | 2016-12-08 | 光電変換装置、光電変換装置の製造方法およびカメラ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108183113A CN108183113A (zh) | 2018-06-19 |
| CN108183113B true CN108183113B (zh) | 2022-03-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711289553.3A Active CN108183113B (zh) | 2016-12-08 | 2017-12-08 | 光电转换设备、相机、制造半导体基板的方法以及制造光电转换设备的方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10340400B2 (enExample) |
| JP (1) | JP2018098266A (enExample) |
| CN (1) | CN108183113B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019102494A (ja) | 2017-11-28 | 2019-06-24 | キヤノン株式会社 | 光電変換装置およびその製造方法、機器 |
| JP7084735B2 (ja) * | 2018-01-31 | 2022-06-15 | キヤノン株式会社 | 半導体装置の製造方法 |
| CN110556390B (zh) | 2018-05-31 | 2024-09-27 | 松下知识产权经营株式会社 | 摄像装置 |
| WO2025142039A1 (ja) * | 2023-12-26 | 2025-07-03 | パナソニックＩｐマネジメント株式会社 | 撮像装置 |
Citations (4)
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| CN1465105A (zh) * | 2001-05-22 | 2003-12-31 | 索尼公司 | 固体成像器件的制造方法 |
| JP2014099481A (ja) * | 2012-11-13 | 2014-05-29 | Sumco Corp | エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、および固体撮像素子の製造方法 |
| CN104781918A (zh) * | 2012-11-13 | 2015-07-15 | 胜高股份有限公司 | 半导体外延晶片的制造方法、半导体外延晶片以及固体摄像元件的制造方法 |
| WO2016157935A1 (ja) * | 2015-04-02 | 2016-10-06 | 三菱電機株式会社 | 電力用半導体装置の製造方法 |
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|---|---|---|---|---|
| JP4613886B2 (ja) | 1993-03-30 | 2011-01-19 | ソニー株式会社 | 固体撮像素子の製造方法、及び半導体基板の製造方法 |
| JP3384506B2 (ja) | 1993-03-30 | 2003-03-10 | ソニー株式会社 | 半導体基板の製造方法 |
| JPH06342798A (ja) | 1993-06-01 | 1994-12-13 | Matsushita Electron Corp | 半導体装置及びその製造方法 |
| JP3941075B2 (ja) | 1996-07-18 | 2007-07-04 | ソニー株式会社 | エピタキシャルシリコン基板及び固体撮像装置並びにこれらの製造方法 |
| JP2001177086A (ja) | 1999-12-21 | 2001-06-29 | Sony Corp | 撮像素子及びその製造方法 |
| JP2002134511A (ja) * | 2000-08-16 | 2002-05-10 | Sony Corp | 半導体基板の製造方法および固体撮像装置の製造方法 |
| JP2004165225A (ja) * | 2002-11-08 | 2004-06-10 | Sony Corp | 半導体基板の製造方法、固体撮像装置の製造方法及び固体撮像装置用の選別方法 |
| JP4810831B2 (ja) * | 2005-01-14 | 2011-11-09 | ソニー株式会社 | 半導体装置及びその製造方法 |
| KR20090111292A (ko) * | 2008-04-21 | 2009-10-26 | 소니 가부시끼 가이샤 | 고체 촬상 장치와 그 제조 방법, 및 전자 기기 |
| JP2010010615A (ja) * | 2008-06-30 | 2010-01-14 | Sumco Corp | 固体撮像素子用シリコン基板およびその製造方法 |
| JP2010040864A (ja) * | 2008-08-06 | 2010-02-18 | Sumco Corp | エピタキシャルシリコンウェーハ及びその製造方法 |
| JP2010114409A (ja) * | 2008-10-10 | 2010-05-20 | Sony Corp | Ｓｏｉ基板とその製造方法、固体撮像装置とその製造方法、および撮像装置 |
| JP2010103318A (ja) * | 2008-10-23 | 2010-05-06 | Sharp Corp | 半導体基板およびその製造方法、固体撮像素子 |
| JP2010258083A (ja) | 2009-04-22 | 2010-11-11 | Panasonic Corp | Ｓｏｉウェーハ、その製造方法および半導体装置の製造方法 |
| JP5558916B2 (ja) * | 2009-06-26 | 2014-07-23 | キヤノン株式会社 | 光電変換装置の製造方法 |
| JP5721370B2 (ja) * | 2010-08-27 | 2015-05-20 | キヤノン株式会社 | 光センサの製造方法、光センサ及びカメラ |
| JP6024102B2 (ja) * | 2011-12-05 | 2016-11-09 | 株式会社ニコン | 撮像装置 |
| JP6044277B2 (ja) * | 2012-11-08 | 2016-12-14 | 信越半導体株式会社 | シリコン単結晶ウェーハの製造方法 |
| JP5531081B2 (ja) * | 2012-12-03 | 2014-06-25 | ソニー株式会社 | 固体撮像装置及びカメラ |
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-
2016
- 2016-12-08 JP JP2016238781A patent/JP2018098266A/ja active Pending
-
2017
- 2017-11-29 US US15/825,443 patent/US10340400B2/en active Active
- 2017-12-08 CN CN201711289553.3A patent/CN108183113B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1465105A (zh) * | 2001-05-22 | 2003-12-31 | 索尼公司 | 固体成像器件的制造方法 |
| JP2014099481A (ja) * | 2012-11-13 | 2014-05-29 | Sumco Corp | エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、および固体撮像素子の製造方法 |
| CN104781918A (zh) * | 2012-11-13 | 2015-07-15 | 胜高股份有限公司 | 半导体外延晶片的制造方法、半导体外延晶片以及固体摄像元件的制造方法 |
| WO2016157935A1 (ja) * | 2015-04-02 | 2016-10-06 | 三菱電機株式会社 | 電力用半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20180166591A1 (en) | 2018-06-14 |
| US10340400B2 (en) | 2019-07-02 |
| CN108183113A (zh) | 2018-06-19 |
| JP2018098266A (ja) | 2018-06-21 |
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