JP2018082010A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2018082010A
JP2018082010A JP2016222540A JP2016222540A JP2018082010A JP 2018082010 A JP2018082010 A JP 2018082010A JP 2016222540 A JP2016222540 A JP 2016222540A JP 2016222540 A JP2016222540 A JP 2016222540A JP 2018082010 A JP2018082010 A JP 2018082010A
Authority
JP
Japan
Prior art keywords
insulating film
trench
gate insulating
gate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016222540A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018082010A5 (https=
Inventor
正清 住友
Masakiyo Sumitomo
正清 住友
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2016222540A priority Critical patent/JP2018082010A/ja
Priority to PCT/JP2017/040490 priority patent/WO2018092680A1/ja
Priority to CN201780067304.1A priority patent/CN109891597A/zh
Publication of JP2018082010A publication Critical patent/JP2018082010A/ja
Publication of JP2018082010A5 publication Critical patent/JP2018082010A5/ja
Priority to US16/351,755 priority patent/US10720518B2/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2016222540A 2016-11-15 2016-11-15 半導体装置 Pending JP2018082010A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016222540A JP2018082010A (ja) 2016-11-15 2016-11-15 半導体装置
PCT/JP2017/040490 WO2018092680A1 (ja) 2016-11-15 2017-11-09 半導体装置
CN201780067304.1A CN109891597A (zh) 2016-11-15 2017-11-09 半导体装置
US16/351,755 US10720518B2 (en) 2016-11-15 2019-03-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016222540A JP2018082010A (ja) 2016-11-15 2016-11-15 半導体装置

Publications (2)

Publication Number Publication Date
JP2018082010A true JP2018082010A (ja) 2018-05-24
JP2018082010A5 JP2018082010A5 (https=) 2019-02-28

Family

ID=62145233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016222540A Pending JP2018082010A (ja) 2016-11-15 2016-11-15 半導体装置

Country Status (4)

Country Link
US (1) US10720518B2 (https=)
JP (1) JP2018082010A (https=)
CN (1) CN109891597A (https=)
WO (1) WO2018092680A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020155475A (ja) * 2019-03-18 2020-09-24 株式会社東芝 半導体装置およびその制御方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11257916B2 (en) * 2019-03-14 2022-02-22 Semiconductor Components Industries, Llc Electronic device having multi-thickness gate insulator
JP7337619B2 (ja) * 2019-09-17 2023-09-04 株式会社東芝 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006245477A (ja) * 2005-03-07 2006-09-14 Toshiba Corp 半導体装置
JP2014197702A (ja) * 2010-12-08 2014-10-16 株式会社デンソー 絶縁ゲート型半導体装置
JP2016046416A (ja) * 2014-08-25 2016-04-04 富士電機株式会社 半導体装置
WO2016136230A1 (ja) * 2015-02-25 2016-09-01 株式会社デンソー 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004022941A (ja) 2002-06-19 2004-01-22 Toshiba Corp 半導体装置
JP2012204377A (ja) * 2011-03-23 2012-10-22 Toshiba Corp 電力用半導体装置
JP6182849B2 (ja) 2012-11-13 2017-08-23 サンケン電気株式会社 半導体装置の製造方法
US9337270B2 (en) * 2013-12-19 2016-05-10 Infineon Technologies Ag Semiconductor device
US9337185B2 (en) * 2013-12-19 2016-05-10 Infineon Technologies Ag Semiconductor devices
CN104103523A (zh) * 2014-07-25 2014-10-15 苏州东微半导体有限公司 一种带u形沟槽的功率器件的制造方法
JP6260515B2 (ja) * 2014-11-13 2018-01-17 三菱電機株式会社 半導体装置
DE102014119466A1 (de) * 2014-12-22 2016-06-23 Infineon Technologies Ag Halbleitervorrichtung mit streifenförmigen trenchgatestrukturen und gateverbinderstruktur

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006245477A (ja) * 2005-03-07 2006-09-14 Toshiba Corp 半導体装置
JP2014197702A (ja) * 2010-12-08 2014-10-16 株式会社デンソー 絶縁ゲート型半導体装置
JP2016046416A (ja) * 2014-08-25 2016-04-04 富士電機株式会社 半導体装置
WO2016136230A1 (ja) * 2015-02-25 2016-09-01 株式会社デンソー 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020155475A (ja) * 2019-03-18 2020-09-24 株式会社東芝 半導体装置およびその制御方法
JP7184681B2 (ja) 2019-03-18 2022-12-06 株式会社東芝 半導体装置およびその制御方法

Also Published As

Publication number Publication date
US10720518B2 (en) 2020-07-21
US20190214491A1 (en) 2019-07-11
CN109891597A (zh) 2019-06-14
WO2018092680A1 (ja) 2018-05-24

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