CN109891597A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN109891597A CN109891597A CN201780067304.1A CN201780067304A CN109891597A CN 109891597 A CN109891597 A CN 109891597A CN 201780067304 A CN201780067304 A CN 201780067304A CN 109891597 A CN109891597 A CN 109891597A
- Authority
- CN
- China
- Prior art keywords
- mentioned
- insulating film
- groove
- gate insulating
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 239000003990 capacitor Substances 0.000 claims description 29
- 239000010410 layer Substances 0.000 description 121
- 238000004088 simulation Methods 0.000 description 16
- 239000000758 substrate Substances 0.000 description 11
- 210000000746 body region Anatomy 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- GDMRBHLKSYSMLJ-UHFFFAOYSA-N [F].O=[Si] Chemical compound [F].O=[Si] GDMRBHLKSYSMLJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- WDCKRYQAVLUEDJ-UHFFFAOYSA-N methyl(oxo)silicon Chemical compound C[Si]=O WDCKRYQAVLUEDJ-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
- H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/231—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-222540 | 2016-11-15 | ||
| JP2016222540A JP2018082010A (ja) | 2016-11-15 | 2016-11-15 | 半導体装置 |
| PCT/JP2017/040490 WO2018092680A1 (ja) | 2016-11-15 | 2017-11-09 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109891597A true CN109891597A (zh) | 2019-06-14 |
Family
ID=62145233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780067304.1A Pending CN109891597A (zh) | 2016-11-15 | 2017-11-09 | 半导体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10720518B2 (https=) |
| JP (1) | JP2018082010A (https=) |
| CN (1) | CN109891597A (https=) |
| WO (1) | WO2018092680A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11257916B2 (en) * | 2019-03-14 | 2022-02-22 | Semiconductor Components Industries, Llc | Electronic device having multi-thickness gate insulator |
| JP7184681B2 (ja) * | 2019-03-18 | 2022-12-06 | 株式会社東芝 | 半導体装置およびその制御方法 |
| JP7337619B2 (ja) * | 2019-09-17 | 2023-09-04 | 株式会社東芝 | 半導体装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006245477A (ja) * | 2005-03-07 | 2006-09-14 | Toshiba Corp | 半導体装置 |
| CN102694018A (zh) * | 2011-03-23 | 2012-09-26 | 株式会社东芝 | 功率用半导体装置 |
| CN104103523A (zh) * | 2014-07-25 | 2014-10-15 | 苏州东微半导体有限公司 | 一种带u形沟槽的功率器件的制造方法 |
| CN104733519A (zh) * | 2013-12-19 | 2015-06-24 | 英飞凌科技股份有限公司 | 半导体器件 |
| CN105609545A (zh) * | 2014-11-13 | 2016-05-25 | 三菱电机株式会社 | 半导体装置 |
| US20160181408A1 (en) * | 2014-12-22 | 2016-06-23 | Infineon Technologies Ag | Semiconductor Device with Stripe-Shaped Trench Gate Structures and Gate Connector Structure |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004022941A (ja) | 2002-06-19 | 2004-01-22 | Toshiba Corp | 半導体装置 |
| JP5831598B2 (ja) * | 2010-12-08 | 2015-12-09 | 株式会社デンソー | 絶縁ゲート型半導体装置 |
| JP6182849B2 (ja) | 2012-11-13 | 2017-08-23 | サンケン電気株式会社 | 半導体装置の製造方法 |
| US9337270B2 (en) * | 2013-12-19 | 2016-05-10 | Infineon Technologies Ag | Semiconductor device |
| JP2016046416A (ja) * | 2014-08-25 | 2016-04-04 | 富士電機株式会社 | 半導体装置 |
| WO2016136230A1 (ja) * | 2015-02-25 | 2016-09-01 | 株式会社デンソー | 半導体装置 |
-
2016
- 2016-11-15 JP JP2016222540A patent/JP2018082010A/ja active Pending
-
2017
- 2017-11-09 WO PCT/JP2017/040490 patent/WO2018092680A1/ja not_active Ceased
- 2017-11-09 CN CN201780067304.1A patent/CN109891597A/zh active Pending
-
2019
- 2019-03-13 US US16/351,755 patent/US10720518B2/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006245477A (ja) * | 2005-03-07 | 2006-09-14 | Toshiba Corp | 半導体装置 |
| CN102694018A (zh) * | 2011-03-23 | 2012-09-26 | 株式会社东芝 | 功率用半导体装置 |
| CN104733519A (zh) * | 2013-12-19 | 2015-06-24 | 英飞凌科技股份有限公司 | 半导体器件 |
| CN104103523A (zh) * | 2014-07-25 | 2014-10-15 | 苏州东微半导体有限公司 | 一种带u形沟槽的功率器件的制造方法 |
| CN105609545A (zh) * | 2014-11-13 | 2016-05-25 | 三菱电机株式会社 | 半导体装置 |
| US20160181408A1 (en) * | 2014-12-22 | 2016-06-23 | Infineon Technologies Ag | Semiconductor Device with Stripe-Shaped Trench Gate Structures and Gate Connector Structure |
Also Published As
| Publication number | Publication date |
|---|---|
| US10720518B2 (en) | 2020-07-21 |
| US20190214491A1 (en) | 2019-07-11 |
| JP2018082010A (ja) | 2018-05-24 |
| WO2018092680A1 (ja) | 2018-05-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190614 |
|
| RJ01 | Rejection of invention patent application after publication |