JP2018082010A5 - - Google Patents

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Publication number
JP2018082010A5
JP2018082010A5 JP2016222540A JP2016222540A JP2018082010A5 JP 2018082010 A5 JP2018082010 A5 JP 2018082010A5 JP 2016222540 A JP2016222540 A JP 2016222540A JP 2016222540 A JP2016222540 A JP 2016222540A JP 2018082010 A5 JP2018082010 A5 JP 2018082010A5
Authority
JP
Japan
Prior art keywords
trench
insulating film
gate insulating
gate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016222540A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018082010A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2016222540A priority Critical patent/JP2018082010A/ja
Priority claimed from JP2016222540A external-priority patent/JP2018082010A/ja
Priority to PCT/JP2017/040490 priority patent/WO2018092680A1/ja
Priority to CN201780067304.1A priority patent/CN109891597A/zh
Publication of JP2018082010A publication Critical patent/JP2018082010A/ja
Publication of JP2018082010A5 publication Critical patent/JP2018082010A5/ja
Priority to US16/351,755 priority patent/US10720518B2/en
Pending legal-status Critical Current

Links

JP2016222540A 2016-11-15 2016-11-15 半導体装置 Pending JP2018082010A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016222540A JP2018082010A (ja) 2016-11-15 2016-11-15 半導体装置
PCT/JP2017/040490 WO2018092680A1 (ja) 2016-11-15 2017-11-09 半導体装置
CN201780067304.1A CN109891597A (zh) 2016-11-15 2017-11-09 半导体装置
US16/351,755 US10720518B2 (en) 2016-11-15 2019-03-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016222540A JP2018082010A (ja) 2016-11-15 2016-11-15 半導体装置

Publications (2)

Publication Number Publication Date
JP2018082010A JP2018082010A (ja) 2018-05-24
JP2018082010A5 true JP2018082010A5 (https=) 2019-02-28

Family

ID=62145233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016222540A Pending JP2018082010A (ja) 2016-11-15 2016-11-15 半導体装置

Country Status (4)

Country Link
US (1) US10720518B2 (https=)
JP (1) JP2018082010A (https=)
CN (1) CN109891597A (https=)
WO (1) WO2018092680A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11257916B2 (en) * 2019-03-14 2022-02-22 Semiconductor Components Industries, Llc Electronic device having multi-thickness gate insulator
JP7184681B2 (ja) * 2019-03-18 2022-12-06 株式会社東芝 半導体装置およびその制御方法
JP7337619B2 (ja) * 2019-09-17 2023-09-04 株式会社東芝 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004022941A (ja) 2002-06-19 2004-01-22 Toshiba Corp 半導体装置
JP2006245477A (ja) * 2005-03-07 2006-09-14 Toshiba Corp 半導体装置
JP5831598B2 (ja) * 2010-12-08 2015-12-09 株式会社デンソー 絶縁ゲート型半導体装置
JP2012204377A (ja) * 2011-03-23 2012-10-22 Toshiba Corp 電力用半導体装置
JP6182849B2 (ja) 2012-11-13 2017-08-23 サンケン電気株式会社 半導体装置の製造方法
US9337270B2 (en) * 2013-12-19 2016-05-10 Infineon Technologies Ag Semiconductor device
US9337185B2 (en) * 2013-12-19 2016-05-10 Infineon Technologies Ag Semiconductor devices
CN104103523A (zh) * 2014-07-25 2014-10-15 苏州东微半导体有限公司 一种带u形沟槽的功率器件的制造方法
JP2016046416A (ja) * 2014-08-25 2016-04-04 富士電機株式会社 半導体装置
JP6260515B2 (ja) * 2014-11-13 2018-01-17 三菱電機株式会社 半導体装置
DE102014119466A1 (de) * 2014-12-22 2016-06-23 Infineon Technologies Ag Halbleitervorrichtung mit streifenförmigen trenchgatestrukturen und gateverbinderstruktur
WO2016136230A1 (ja) * 2015-02-25 2016-09-01 株式会社デンソー 半導体装置

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