JP2017537455A - 注入を用いた流動性膜特性のチューニング - Google Patents
注入を用いた流動性膜特性のチューニング Download PDFInfo
- Publication number
- JP2017537455A JP2017537455A JP2017513770A JP2017513770A JP2017537455A JP 2017537455 A JP2017537455 A JP 2017537455A JP 2017513770 A JP2017513770 A JP 2017513770A JP 2017513770 A JP2017513770 A JP 2017513770A JP 2017537455 A JP2017537455 A JP 2017537455A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- fluidized bed
- features
- seed
- flowable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000009969 flowable effect Effects 0.000 title claims description 81
- 238000002347 injection Methods 0.000 title description 24
- 239000007924 injection Substances 0.000 title description 24
- 239000012528 membrane Substances 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000002513 implantation Methods 0.000 claims description 75
- 238000000034 method Methods 0.000 claims description 55
- 125000006850 spacer group Chemical group 0.000 claims description 53
- 229910052710 silicon Inorganic materials 0.000 claims description 52
- 239000010703 silicon Substances 0.000 claims description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 49
- 238000004519 manufacturing process Methods 0.000 claims description 46
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 26
- 239000012530 fluid Substances 0.000 claims description 26
- 229910052760 oxygen Inorganic materials 0.000 claims description 26
- 239000001301 oxygen Substances 0.000 claims description 26
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 16
- 229910052786 argon Inorganic materials 0.000 claims description 14
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 238000011049 filling Methods 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052785 arsenic Inorganic materials 0.000 claims description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052734 helium Inorganic materials 0.000 claims description 8
- 239000001307 helium Substances 0.000 claims description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 8
- 229910052743 krypton Inorganic materials 0.000 claims description 8
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052754 neon Inorganic materials 0.000 claims description 8
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 229910052704 radon Inorganic materials 0.000 claims description 8
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 8
- 229910052724 xenon Inorganic materials 0.000 claims description 8
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 346
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 79
- 239000000463 material Substances 0.000 description 51
- 125000004429 atom Chemical group 0.000 description 44
- 235000012239 silicon dioxide Nutrition 0.000 description 35
- 239000000377 silicon dioxide Substances 0.000 description 35
- 150000002500 ions Chemical class 0.000 description 34
- 238000005530 etching Methods 0.000 description 20
- 238000005229 chemical vapour deposition Methods 0.000 description 19
- 239000011241 protective layer Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 16
- 229910004298 SiO 2 Inorganic materials 0.000 description 15
- 238000000137 annealing Methods 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 238000005240 physical vapour deposition Methods 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- -1 ionized molecules Chemical group 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 238000001723 curing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000007943 implant Substances 0.000 description 6
- 230000015654 memory Effects 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 229910052729 chemical element Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/3115—Doping the insulating layers
- H01L21/31155—Doping the insulating layers by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Element Separation (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (15)
- 基板上の流動性層に種を供給することと、
前記流動性層に前記種を注入することによって前記流動性層の特性を調整することであって、前記特性は密度、応力、膜収縮、エッチング選択性、またはこれらの任意の組合せを含む、調整することと
を含む、電子デバイスを製造する方法。 - 前記特性を制御するために、前記種の温度、エネルギー、ドーズ量、及び質量のうちの少なくとも1つを調整すること
をさらに含む、請求項1に記載の方法。 - 前記種は、ケイ素、水素、ゲルマニウム、ホウ素、炭素、酸素、窒素、アルゴン、ヘリウム、ネオン、クリプトン、キセノン、ラドン、ヒ素、リン、またはこれらの任意の組合せを含む、請求項1に記載の方法。
- 前記基板上に複数のフィン構造を形成すること、
前記フィン構造間に前記流動性層を充填すること、
及び
前記流動性層の少なくとも一部を除去すること
をさらに含む、請求項1に記載の方法。 - 複数のトレンチを形成するためにハードマスク層をパターニングすること、
前記流動性層を前記複数のトレンチ内に充填すること、及び
前記流動性層の一部をそのまま残しながら、パターニングされた前記ハードマスク層の少なくとも一部を除去することであって、前記マスク層は前記エッチング選択性を増加するため前記種を注入することによって変更される、除去すること
をさらに含む、請求項1に記載の方法。 - 基板上の複数の特徴上に流動性層を堆積させることと、
前記流動性層と前記複数の特徴のうちの少なくとも1つの、エッチング選択性を調整するため、前記複数の特徴上の前記流動性層に種を注入することと
を含む、電子デバイスを製造する方法。 - 前記種の温度を調整すること
をさらに含む、請求項6に記載の方法。 - 前記流動性層を酸化すること
をさらに含む、請求項6に記載の方法。 - 前記複数の特徴上に側壁スペーサを形成することと、
前記複数の特徴のうちの少なくとも1つを選択的に除去することと
をさらに含む、請求項6に記載の方法。 - 前記エッチング選択性を制御するため、前記種のエネルギー、ドーズ量、及び質量のうちの少なくとも1つを調整すること
をさらに含む、請求項6に記載の方法。 - 基板上に流動性層を含むワークピースを保持するペデスタルを備える処理チャンバと、
前記処理チャンバ及び電磁石システムに連結された、前記流動性層に種を供給するイオン源と、
前記イオン源に連結されたプロセッサであって、前記プロセッサは、前記流動性層への前記種の注入を制御することによって前記流動性層の特性を調整する第1の構成を有し、前記特性は、密度、応力、膜収縮、エッチング選択性、またはこれらの任意の組合せを含む、プロセッサと
を備える、電子デバイスを製造する装置。 - 前記プロセッサは、前記特性を制御するために、前記種の温度、エネルギー、ドーズ量、及び質量のうちの少なくとも1つを調整する、第2の構成を有する、請求項11に記載の装置。
- 前記種は、ケイ素、水素、ゲルマニウム、ホウ素、炭素、酸素、窒素、アルゴン、ヘリウム、ネオン、クリプトン、キセノン、ラドン、ヒ素、リン、またはこれらの任意の組合せを含む、請求項11に記載の装置。
- 前記プロセッサは、前記流動性層の酸化を制御するための第3の構成を有し、変更された流動性層の少なくとも一部の除去を制御する第4の構成を有する、請求項11に記載の装置。
- 前記流動性層は前記基板上のパターニングされたハードマスク層上に堆積し、前記プロセッサは、変更された流動性層の一部をそのまま残しながらパターニングされたハードマスク層を除去することを制御する、第5の構成を有する、請求項11に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/485,505 | 2014-09-12 | ||
US14/485,505 US20160079034A1 (en) | 2014-09-12 | 2014-09-12 | Flowable film properties tuning using implantation |
PCT/US2015/045393 WO2016039935A1 (en) | 2014-09-12 | 2015-08-14 | Flowable film properties tuning using implantation |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017537455A true JP2017537455A (ja) | 2017-12-14 |
JP6678166B2 JP6678166B2 (ja) | 2020-04-08 |
Family
ID=55455413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017513770A Active JP6678166B2 (ja) | 2014-09-12 | 2015-08-14 | 注入を用いた流動性膜特性のチューニング |
Country Status (6)
Country | Link |
---|---|
US (1) | US20160079034A1 (ja) |
JP (1) | JP6678166B2 (ja) |
KR (1) | KR102591569B1 (ja) |
CN (1) | CN106716599A (ja) |
TW (1) | TWI669780B (ja) |
WO (1) | WO2016039935A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2608872B1 (en) | 2010-08-23 | 2019-07-31 | Exogenesis Corporation | Method and apparatus for neutral beam processing based on gas cluster ion beam technology |
US10202684B2 (en) | 2010-08-23 | 2019-02-12 | Exogenesis Corporation | Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby |
US9852902B2 (en) * | 2014-10-03 | 2017-12-26 | Applied Materials, Inc. | Material deposition for high aspect ratio structures |
US10316407B2 (en) * | 2014-10-24 | 2019-06-11 | Versum Materials Us, Llc | Compositions and methods using same for deposition of silicon-containing films |
US9859129B2 (en) * | 2016-02-26 | 2018-01-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method of the same |
TWI692011B (zh) * | 2016-07-20 | 2020-04-21 | 美商艾克索傑尼席斯公司 | 用於基於氣體簇離子束技術的中性束處理之方法及藉其製造之物件 |
US9824937B1 (en) | 2016-08-31 | 2017-11-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Flowable CVD quality control in STI loop |
US10460995B2 (en) * | 2016-11-29 | 2019-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacture of a FinFET device |
US10020401B2 (en) * | 2016-11-29 | 2018-07-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for straining a transistor gate through interlayer dielectric (ILD) doping schemes |
US10177006B2 (en) * | 2016-11-30 | 2019-01-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process for making multi-gate transistors and resulting structures |
US10354875B1 (en) * | 2018-01-08 | 2019-07-16 | Varian Semiconductor Equipment Associates, Inc. | Techniques for improved removal of sacrificial mask |
US10504777B2 (en) * | 2018-02-13 | 2019-12-10 | Raytheon Company | Method of manufacturing wafer level low melting temperature interconnections |
US10515802B2 (en) * | 2018-04-20 | 2019-12-24 | Varian Semiconductor Equipment Associates, Inc. | Techniques for forming low stress mask using implantation |
CN110943031B (zh) * | 2018-09-21 | 2022-03-04 | 长鑫存储技术有限公司 | 半导体器件的制备方法 |
CN110265290B (zh) * | 2019-06-27 | 2020-06-30 | 英特尔半导体(大连)有限公司 | 增强半导体蚀刻能力的方法 |
US20210175075A1 (en) * | 2019-12-09 | 2021-06-10 | Applied Materials, Inc. | Oxygen radical assisted dielectric film densification |
US11615984B2 (en) * | 2020-04-14 | 2023-03-28 | Applied Materials, Inc. | Method of dielectric material fill and treatment |
US11615966B2 (en) | 2020-07-19 | 2023-03-28 | Applied Materials, Inc. | Flowable film formation and treatments |
US11699571B2 (en) | 2020-09-08 | 2023-07-11 | Applied Materials, Inc. | Semiconductor processing chambers for deposition and etch |
US11887811B2 (en) | 2020-09-08 | 2024-01-30 | Applied Materials, Inc. | Semiconductor processing chambers for deposition and etch |
CN113506732A (zh) * | 2021-06-21 | 2021-10-15 | 上海华力集成电路制造有限公司 | 一种减小FinFET器件伪栅极切断效应的方法 |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02133926A (ja) * | 1988-11-15 | 1990-05-23 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JPH03180029A (ja) * | 1989-12-08 | 1991-08-06 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH0950968A (ja) * | 1995-08-04 | 1997-02-18 | Hitachi Ltd | 半導体素子製造方法および半導体素子 |
JP2000031267A (ja) * | 1998-06-16 | 2000-01-28 | Samsung Electron Co Ltd | トレンチ隔離形成方法 |
JP2000082682A (ja) * | 1998-08-18 | 2000-03-21 | Siemens Ag | 半導体―絶縁層の製造方法及びそれを有する素子の製造方法 |
JP2001077329A (ja) * | 1999-07-07 | 2001-03-23 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2002094052A (ja) * | 2000-09-13 | 2002-03-29 | Sharp Corp | 半導体装置の製造方法 |
US20050191828A1 (en) * | 2000-08-11 | 2005-09-01 | Applied Materials, Inc. | Method for ion implanting insulator material to reduce dielectric constant |
JP2008160064A (ja) * | 2006-11-28 | 2008-07-10 | Toyota Motor Corp | 半導体装置の製造方法 |
JP2012231007A (ja) * | 2011-04-26 | 2012-11-22 | Elpida Memory Inc | 半導体装置の製造方法 |
US20120295444A1 (en) * | 2011-05-16 | 2012-11-22 | Varian Semiconductor Equipment Associates, Inc. | Techniques for forming 3d structures |
US20130217243A1 (en) * | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Doping of dielectric layers |
US20140051264A1 (en) * | 2012-03-05 | 2014-02-20 | Applied Materials, Inc. | Flowable films using alternative silicon precursors |
US8673723B1 (en) * | 2013-02-07 | 2014-03-18 | Globalfoundries Inc. | Methods of forming isolation regions for FinFET semiconductor devices |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69230514T2 (de) * | 1991-07-31 | 2000-06-21 | St Microelectronics Inc | Verfahren zur Herstellung eines vergrabenen Kontaktes aus Polysilizium |
US6882025B2 (en) * | 2003-04-25 | 2005-04-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained-channel transistor and methods of manufacture |
US7072695B2 (en) * | 2004-02-17 | 2006-07-04 | Nokia Corporation | Mechanical interaction with a phone using a cradle |
US7582555B1 (en) * | 2005-12-29 | 2009-09-01 | Novellus Systems, Inc. | CVD flowable gap fill |
KR100640640B1 (ko) * | 2005-04-19 | 2006-10-31 | 삼성전자주식회사 | 미세 피치의 하드마스크를 이용한 반도체 소자의 미세 패턴형성 방법 |
US7745352B2 (en) * | 2007-08-27 | 2010-06-29 | Applied Materials, Inc. | Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process |
KR101026486B1 (ko) * | 2008-10-22 | 2011-04-01 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조방법 |
US9041158B2 (en) * | 2012-02-23 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming fin field-effect transistors having controlled fin height |
US8716765B2 (en) * | 2012-03-23 | 2014-05-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact structure of semiconductor device |
WO2014130304A1 (en) * | 2013-02-19 | 2014-08-28 | Applied Materials, Inc. | Hdd patterning using flowable cvd film |
-
2014
- 2014-09-12 US US14/485,505 patent/US20160079034A1/en not_active Abandoned
-
2015
- 2015-08-14 WO PCT/US2015/045393 patent/WO2016039935A1/en active Application Filing
- 2015-08-14 KR KR1020177009958A patent/KR102591569B1/ko active IP Right Grant
- 2015-08-14 JP JP2017513770A patent/JP6678166B2/ja active Active
- 2015-08-14 CN CN201580048959.5A patent/CN106716599A/zh active Pending
- 2015-09-11 TW TW104130151A patent/TWI669780B/zh active
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02133926A (ja) * | 1988-11-15 | 1990-05-23 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JPH03180029A (ja) * | 1989-12-08 | 1991-08-06 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH0950968A (ja) * | 1995-08-04 | 1997-02-18 | Hitachi Ltd | 半導体素子製造方法および半導体素子 |
JP2000031267A (ja) * | 1998-06-16 | 2000-01-28 | Samsung Electron Co Ltd | トレンチ隔離形成方法 |
JP2000082682A (ja) * | 1998-08-18 | 2000-03-21 | Siemens Ag | 半導体―絶縁層の製造方法及びそれを有する素子の製造方法 |
JP2001077329A (ja) * | 1999-07-07 | 2001-03-23 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US20050191828A1 (en) * | 2000-08-11 | 2005-09-01 | Applied Materials, Inc. | Method for ion implanting insulator material to reduce dielectric constant |
JP2002094052A (ja) * | 2000-09-13 | 2002-03-29 | Sharp Corp | 半導体装置の製造方法 |
JP2008160064A (ja) * | 2006-11-28 | 2008-07-10 | Toyota Motor Corp | 半導体装置の製造方法 |
JP2012231007A (ja) * | 2011-04-26 | 2012-11-22 | Elpida Memory Inc | 半導体装置の製造方法 |
US20120295444A1 (en) * | 2011-05-16 | 2012-11-22 | Varian Semiconductor Equipment Associates, Inc. | Techniques for forming 3d structures |
US20130217243A1 (en) * | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Doping of dielectric layers |
US20140051264A1 (en) * | 2012-03-05 | 2014-02-20 | Applied Materials, Inc. | Flowable films using alternative silicon precursors |
US8673723B1 (en) * | 2013-02-07 | 2014-03-18 | Globalfoundries Inc. | Methods of forming isolation regions for FinFET semiconductor devices |
Also Published As
Publication number | Publication date |
---|---|
TWI669780B (zh) | 2019-08-21 |
WO2016039935A1 (en) | 2016-03-17 |
US20160079034A1 (en) | 2016-03-17 |
KR20170051517A (ko) | 2017-05-11 |
KR102591569B1 (ko) | 2023-10-18 |
JP6678166B2 (ja) | 2020-04-08 |
CN106716599A (zh) | 2017-05-24 |
TW201616603A (zh) | 2016-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6678166B2 (ja) | 注入を用いた流動性膜特性のチューニング | |
CN107154395B (zh) | 半导体结构及其制造方法 | |
US9396986B2 (en) | Mechanism of forming a trench structure | |
US9209243B2 (en) | Method of forming a shallow trench isolation structure | |
TWI645506B (zh) | 形成具有氣隙之半導體元件的方法 | |
CN110476239B (zh) | 使用反应性退火的间隙填充 | |
US8741710B2 (en) | Methods of fabricating semiconductor devices using a plasma process with non-silane gas including deuterium | |
CN106601676A (zh) | 半导体装置的形成方法 | |
JP2004134753A (ja) | 多重の誘電率と多重の厚さを有するゲート絶縁体層を形成する方法 | |
KR20180119092A (ko) | 반도체 장치 및 이의 제조 방법 | |
TW200939347A (en) | Low temperature conformal oxide formation and applications | |
CN110660735B (zh) | 用于介电层的应力调制 | |
US20210175075A1 (en) | Oxygen radical assisted dielectric film densification | |
JP2024020242A (ja) | メモリ用途のための垂直トランジスタの作製 | |
US10276369B2 (en) | Material deposition for high aspect ratio structures | |
US7566924B2 (en) | Semiconductor device with gate spacer of positive slope and fabrication method thereof | |
TW201918578A (zh) | 形成氧化矽層的方法 | |
KR20220166338A (ko) | 유전체 재료 충전 및 처리 방법들 | |
TWI757165B (zh) | 半導體元件與方法 | |
US20220336626A1 (en) | Densified gate spacers and formation thereof | |
US20240113166A1 (en) | Semiconductor devices and methods of manufacturing thereof | |
US20210359104A1 (en) | Fin field-effect transistor and method of forming the same | |
KR20060023429A (ko) | 반도체 장치의 소자분리 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180808 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190531 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190611 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190903 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200218 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200316 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6678166 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |