JP2017504960A - 無機・有機ハイブリッドペロブスカイト化合物の前駆物質 - Google Patents
無機・有機ハイブリッドペロブスカイト化合物の前駆物質 Download PDFInfo
- Publication number
- JP2017504960A JP2017504960A JP2016538008A JP2016538008A JP2017504960A JP 2017504960 A JP2017504960 A JP 2017504960A JP 2016538008 A JP2016538008 A JP 2016538008A JP 2016538008 A JP2016538008 A JP 2016538008A JP 2017504960 A JP2017504960 A JP 2017504960A
- Authority
- JP
- Japan
- Prior art keywords
- precursor
- perovskite compound
- ion
- organic
- inorganic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 119
- 239000002243 precursor Substances 0.000 title claims abstract description 118
- -1 halogen anion Chemical class 0.000 claims abstract description 68
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 28
- 150000002892 organic cations Chemical class 0.000 claims abstract description 18
- 150000001768 cations Chemical class 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 62
- 239000000126 substance Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 32
- 239000002904 solvent Substances 0.000 claims description 31
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 28
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000006096 absorbing agent Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 17
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 16
- 239000000460 chlorine Substances 0.000 claims description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 14
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 14
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 238000002441 X-ray diffraction Methods 0.000 claims description 9
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052794 bromium Inorganic materials 0.000 claims description 9
- 239000006185 dispersion Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 8
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- 229910052740 iodine Inorganic materials 0.000 claims description 8
- 229910021645 metal ion Inorganic materials 0.000 claims description 8
- 239000012453 solvate Substances 0.000 claims description 8
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical group [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 claims description 7
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- 229940093499 ethyl acetate Drugs 0.000 claims description 6
- 235000019439 ethyl acetate Nutrition 0.000 claims description 6
- 239000011630 iodine Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 5
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 5
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims description 4
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 claims description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 4
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 229940117389 dichlorobenzene Drugs 0.000 claims description 4
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 4
- 235000011187 glycerol Nutrition 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 59
- 239000010410 layer Substances 0.000 description 41
- 108091006149 Electron carriers Proteins 0.000 description 37
- 239000000243 solution Substances 0.000 description 35
- 239000000843 powder Substances 0.000 description 26
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 21
- 239000010409 thin film Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 18
- 230000005525 hole transport Effects 0.000 description 15
- 229910044991 metal oxide Inorganic materials 0.000 description 15
- 150000004706 metal oxides Chemical class 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 14
- 229910010413 TiO 2 Inorganic materials 0.000 description 13
- 238000000576 coating method Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 11
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 230000031700 light absorption Effects 0.000 description 10
- 239000007772 electrode material Substances 0.000 description 9
- 238000004528 spin coating Methods 0.000 description 9
- 125000006686 (C1-C24) alkyl group Chemical group 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 235000019441 ethanol Nutrition 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 239000003960 organic solvent Substances 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 239000000654 additive Substances 0.000 description 7
- 238000001035 drying Methods 0.000 description 7
- 229920001167 Poly(triaryl amine) Polymers 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000027756 respiratory electron transport chain Effects 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000002041 carbon nanotube Substances 0.000 description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910003473 lithium bis(trifluoromethanesulfonyl)imide Inorganic materials 0.000 description 4
- QSZMZKBZAYQGRS-UHFFFAOYSA-N lithium;bis(trifluoromethylsulfonyl)azanide Chemical compound [Li+].FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F QSZMZKBZAYQGRS-UHFFFAOYSA-N 0.000 description 4
- 229910001507 metal halide Inorganic materials 0.000 description 4
- 150000005309 metal halides Chemical class 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 125000006736 (C6-C20) aryl group Chemical group 0.000 description 3
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000005964 Acibenzolar-S-methyl Substances 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 108010078791 Carrier Proteins Proteins 0.000 description 3
- 229920000144 PEDOT:PSS Polymers 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- 229940006461 iodide ion Drugs 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 125000006701 (C1-C7) alkyl group Chemical group 0.000 description 2
- RYSXWUYLAWPLES-MTOQALJVSA-N (Z)-4-hydroxypent-3-en-2-one titanium Chemical compound [Ti].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O RYSXWUYLAWPLES-MTOQALJVSA-N 0.000 description 2
- IBXNCJKFFQIKKY-UHFFFAOYSA-N 1-pentyne Chemical compound CCCC#C IBXNCJKFFQIKKY-UHFFFAOYSA-N 0.000 description 2
- ADSOSINJPNKUJK-UHFFFAOYSA-N 2-butylpyridine Chemical group CCCCC1=CC=CC=N1 ADSOSINJPNKUJK-UHFFFAOYSA-N 0.000 description 2
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229920000280 Poly(3-octylthiophene) Polymers 0.000 description 2
- 239000004693 Polybenzimidazole Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000000909 amidinium group Chemical group 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- INPLXZPZQSLHBR-UHFFFAOYSA-N cobalt(2+);sulfide Chemical compound [S-2].[Co+2] INPLXZPZQSLHBR-UHFFFAOYSA-N 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 238000007756 gravure coating Methods 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920002480 polybenzimidazole Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000005118 spray pyrolysis Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229930192474 thiophene Natural products 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- PWYVVBKROXXHEB-UHFFFAOYSA-M trimethyl-[3-(1-methyl-2,3,4,5-tetraphenylsilol-1-yl)propyl]azanium;iodide Chemical compound [I-].C[N+](C)(C)CCC[Si]1(C)C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 PWYVVBKROXXHEB-UHFFFAOYSA-M 0.000 description 2
- PZWLRLIAVLSBQU-UHFFFAOYSA-N 1,2-dioctyl-9h-fluorene Chemical compound C1=CC=C2C3=CC=C(CCCCCCCC)C(CCCCCCCC)=C3CC2=C1 PZWLRLIAVLSBQU-UHFFFAOYSA-N 0.000 description 1
- HIZVCIIORGCREW-UHFFFAOYSA-N 1,4-dioxene Chemical compound C1COC=CO1 HIZVCIIORGCREW-UHFFFAOYSA-N 0.000 description 1
- RMSGQZDGSZOJMU-UHFFFAOYSA-N 1-butyl-2-phenylbenzene Chemical group CCCCC1=CC=CC=C1C1=CC=CC=C1 RMSGQZDGSZOJMU-UHFFFAOYSA-N 0.000 description 1
- PDQRQJVPEFGVRK-UHFFFAOYSA-N 2,1,3-benzothiadiazole Chemical compound C1=CC=CC2=NSN=C21 PDQRQJVPEFGVRK-UHFFFAOYSA-N 0.000 description 1
- ZAMMNHRGNDZIDN-UHFFFAOYSA-N 2,7-dioctyl-9H-indeno[2,1-b]siline Chemical compound C(CCCCCCC)C1=[SiH]C=2CC3=CC(=CC=C3C2C=C1)CCCCCCCC ZAMMNHRGNDZIDN-UHFFFAOYSA-N 0.000 description 1
- QWAFPTWWKUWNDC-UHFFFAOYSA-N 2-(4-carboxypyridin-2-yl)pyridine-4-carboxylic acid;ruthenium Chemical compound [Ru].OC(=O)C1=CC=NC(C=2N=CC=C(C=2)C(O)=O)=C1 QWAFPTWWKUWNDC-UHFFFAOYSA-N 0.000 description 1
- XBGNOMBPRQVJSR-UHFFFAOYSA-N 2-(4-nitrophenyl)butanoic acid Chemical compound CCC(C(O)=O)C1=CC=C([N+]([O-])=O)C=C1 XBGNOMBPRQVJSR-UHFFFAOYSA-N 0.000 description 1
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 1
- GIFWAJGKWIDXMY-UHFFFAOYSA-N 2-octylthiophene Chemical compound CCCCCCCCC1=CC=CS1 GIFWAJGKWIDXMY-UHFFFAOYSA-N 0.000 description 1
- JAYBIBLZTQMCAY-UHFFFAOYSA-N 3-decylthiophene Chemical compound CCCCCCCCCCC=1C=CSC=1 JAYBIBLZTQMCAY-UHFFFAOYSA-N 0.000 description 1
- RFKWIEFTBMACPZ-UHFFFAOYSA-N 3-dodecylthiophene Chemical compound CCCCCCCCCCCCC=1C=CSC=1 RFKWIEFTBMACPZ-UHFFFAOYSA-N 0.000 description 1
- LBILMILSSHNOHK-UHFFFAOYSA-N 3-hexylthiophene Chemical compound CCCCCCC=1C=[C]SC=1 LBILMILSSHNOHK-UHFFFAOYSA-N 0.000 description 1
- XGERJWSXTKVPSV-UHFFFAOYSA-N 4,7-dithiophen-2-yl-2,1,3-benzothiadiazole Chemical compound C1=CSC(C=2C3=NSN=C3C(C=3SC=CC=3)=CC=2)=C1 XGERJWSXTKVPSV-UHFFFAOYSA-N 0.000 description 1
- LGDCSNDMFFFSHY-UHFFFAOYSA-N 4-butyl-n,n-diphenylaniline Chemical compound C1=CC(CCCC)=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 LGDCSNDMFFFSHY-UHFFFAOYSA-N 0.000 description 1
- QMNVUZQWXKLEFP-UHFFFAOYSA-N 5-octylthieno[3,4-c]pyrrole-4,6-dione Chemical compound S1C=C2C(=O)N(CCCCCCCC)C(=O)C2=C1 QMNVUZQWXKLEFP-UHFFFAOYSA-N 0.000 description 1
- XQNMSKCVXVXEJT-UHFFFAOYSA-N 7,14,25,32-tetrazaundecacyclo[21.13.2.22,5.03,19.04,16.06,14.08,13.020,37.024,32.026,31.034,38]tetraconta-1(36),2,4,6,8,10,12,16,18,20(37),21,23(38),24,26,28,30,34,39-octadecaene-15,33-dione 7,14,25,32-tetrazaundecacyclo[21.13.2.22,5.03,19.04,16.06,14.08,13.020,37.025,33.026,31.034,38]tetraconta-1(37),2,4,6,8,10,12,16,18,20,22,26,28,30,32,34(38),35,39-octadecaene-15,24-dione Chemical compound O=c1c2ccc3c4ccc5c6nc7ccccc7n6c(=O)c6ccc(c7ccc(c8nc9ccccc9n18)c2c37)c4c56.O=c1c2ccc3c4ccc5c6c(ccc(c7ccc(c8nc9ccccc9n18)c2c37)c46)c1nc2ccccc2n1c5=O XQNMSKCVXVXEJT-UHFFFAOYSA-N 0.000 description 1
- OQLZINXFSUDMHM-UHFFFAOYSA-N Acetamidine Chemical compound CC(N)=N OQLZINXFSUDMHM-UHFFFAOYSA-N 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- LOYYIKDGYOYCSH-UHFFFAOYSA-N [Co].N1(N=CC=C1)C1=NC=CC=C1.N1(N=CC=C1)C1=NC=CC=C1.N1(N=CC=C1)C1=NC=CC=C1 Chemical compound [Co].N1(N=CC=C1)C1=NC=CC=C1.N1(N=CC=C1)C1=NC=CC=C1.N1(N=CC=C1)C1=NC=CC=C1 LOYYIKDGYOYCSH-UHFFFAOYSA-N 0.000 description 1
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 229940105990 diglycerin Drugs 0.000 description 1
- GPLRAVKSCUXZTP-UHFFFAOYSA-N diglycerol Chemical compound OCC(O)COCC(O)CO GPLRAVKSCUXZTP-UHFFFAOYSA-N 0.000 description 1
- 229960001760 dimethyl sulfoxide Drugs 0.000 description 1
- 229940035422 diphenylamine Drugs 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 229960004756 ethanol Drugs 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 125000005909 ethyl alcohol group Chemical group 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- FJAOBQORBYMRNO-UHFFFAOYSA-N f16cupc Chemical compound [Cu+2].[N-]1C(N=C2C3=C(F)C(F)=C(F)C(F)=C3C(N=C3C4=C(F)C(F)=C(F)C(F)=C4C(=N4)[N-]3)=N2)=C(C(F)=C(F)C(F)=C2F)C2=C1N=C1C2=C(F)C(F)=C(F)C(F)=C2C4=N1 FJAOBQORBYMRNO-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 229920000264 poly(3',7'-dimethyloctyloxy phenylene vinylene) Polymers 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 125000000858 thiocyanato group Chemical group *SC#N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/24—Lead compounds
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G21/00—Compounds of lead
- C01G21/006—Compounds containing, besides lead, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/30—Three-dimensional structures
- C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
AM(GM)nX3
AMX3
R1−NH3 +
R2−C3H3N2 +−R3
AM(GM)nX3
PbI2粉末をジメチルスルホキシド(DMSO)溶媒に投入し、60℃で2時間撹拌することで、0.8MのPbI2‐DMSO溶液を製造した。この溶液をトルエンに滴下(drop‐wise)した後、沈殿粉末を濾紙で分離回収し、常温で1時間乾燥した。
ペロブスカイト前駆物質の製造
CH3NH3I(以下、MAI)とPbI2粉末を1:1の化学量論比でジメチルスルホキシド(DMSO)溶媒に投入し、60℃で2時間撹拌することで、0.8MのCH3NH3I‐PbI2‐DMSO溶液を製造した。この溶液をトルエンに滴下した後、沈殿粉末を濾紙で分離回収し、常温で1時間乾燥した。
前駆物質薄膜の製造
実施例1で提示された方法を用い、ガンマブチロラクトン(GBL)を追加混合溶媒として使用してMAI‐PbI2‐DMSO溶液を製造した。すなわち、GBL:DMSOの体積比率を7:3とし、MAPbI3をベースとして濃度0.8Mの溶液を製造した。
実施例1と同様に薄膜を製造するにあたり、溶液を製造する時に、DMSOを除いて100%ガンマ‐ブチロラクトン(以下、GBL)のみを溶媒として使用した(MAI‐PbI2‐GBL溶液)。
多孔性TiO2薄膜基板の製造
フッ素含有酸化スズがコーティングされたガラス基板(FTO;F‐doped SnO2、8ohms/cm2、Pilkington、以下FTO基板(第1の電極))を25x25mmのサイズに切断した後、端部をエッチングしてFTOを部分的に除去した。
実施例3と同様に太陽電池を製造するにあたり、比較例2における溶融シリカを、製造された多孔性電子伝達体に替え、多孔性電子伝達体上に、比較例2と同様の方法でペロブスカイト化合物の光吸収層を製造した。
Claims (12)
- 有機カチオン、金属カチオン、ハロゲンアニオン、およびゲスト分子(guest molecule、GM)を含有する、無機・有機ハイブリッドペロブスカイト化合物の前駆物質。
- Cu‐Kα線を用いたX‐線回折測定において、6.2〜6.8°、7〜7.5°、および8.9〜9.5°の回折角2θで回折ピークが検出される、請求項1に記載の前駆物質。
- ゲスト分子が、無機・有機ハイブリッドペロブスカイト化合物を溶解する溶媒である、請求項1に記載の前駆物質。
- 無機・有機ハイブリッドペロブスカイト化合物と溶媒との溶媒和物(solvate)である、請求項3に記載の前駆物質。
- ゲスト分子は、酸素、窒素、フッ素、塩素、臭素、およびヨウ素から選択される1つ以上の元素を含有する溶媒である、請求項3に記載の前駆物質。
- ゲスト分子は、N,N‐ジメチルアセトアミド(Dimethylacetamid)、1,4‐ジオキサン(dioxane)、ジエチルアミン(diethylamine)、エチルアセテート(ethylacetate)、テトラヒドロフラン(tetrahydrofuran)、ピリジン(pyridine)、メタノール(methanol)、エタノール(ethanol)、ジクロロベンゼン(dichlorobenzene)、グリセリン(glycerin)、ジメチルスルホキシド(DMSO;dimethyl sulfoxide)、およびN,N‐ジメチルホルムアミド(DMF;dimethylformamide)から選択される1つまたは2つ以上である、請求項3に記載の前駆物質。
- 下記化学式1を満たす、請求項3に記載の前駆物質。
[化1]
AM(GM)nX3
(Aは、有機アンモニウムイオン、アミジニウム系(amidinium group)イオン、または有機アンモニウムイオンとアミジニウム系イオンの両方であり、Mは2価の金属イオンであり、Xはハロゲンイオンであり、nは0<n<3の実数である。) - 化学式1中、XはXa (1−y)Xb yであり、Xは、ヨウ素イオン(I−)、塩素イオン(Cl−)、および臭素イオン(Br−)から選択される、互いに異なるハロゲンイオンであり、yは0<y<1の実数である、請求項7に記載の前駆物質。
- 太陽電池の光吸収体用である、請求項1に記載の前駆物質。
- 請求項1乃至9の何れか一項に記載の前駆物質を含有する分散液。
- 請求項1乃至9の何れか一項に記載の前駆物質を用いた太陽電池の光吸収体の製造方法。
- 基材上に前駆物質を塗布または蒸着して前駆物質層を形成するステップと、
前記前駆物質層にエネルギーを印加して、ゲスト分子を揮発除去するステップと、を含む、請求項11に記載の太陽電池の光吸収体の製造方法。
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20130161911 | 2013-12-23 | ||
KR10-2013-0161888 | 2013-12-23 | ||
KR20130161916 | 2013-12-23 | ||
KR10-2013-0161916 | 2013-12-23 | ||
KR10-2013-0161911 | 2013-12-23 | ||
KR20130161888 | 2013-12-23 | ||
KR1020140055845A KR20150073821A (ko) | 2013-12-23 | 2014-05-09 | 고효율 무/유기 하이브리드 태양전지용 전구물질 |
KR10-2014-0055845 | 2014-05-09 | ||
PCT/KR2014/012727 WO2015099412A1 (ko) | 2013-12-23 | 2014-12-23 | 무/유기 하이브리드 페로브스카이트 화합물 전구물질 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017504960A true JP2017504960A (ja) | 2017-02-09 |
JP6339203B2 JP6339203B2 (ja) | 2018-06-06 |
Family
ID=56706962
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016538008A Active JP6339203B2 (ja) | 2013-12-23 | 2014-12-23 | 無機・有機ハイブリッドペロブスカイト化合物の前駆物質 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10243141B2 (ja) |
JP (1) | JP6339203B2 (ja) |
KR (2) | KR101893493B1 (ja) |
CN (1) | CN105830228B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019175970A (ja) * | 2018-03-28 | 2019-10-10 | 三菱ケミカル株式会社 | 光電変換素子及び太陽電池モジュール |
WO2021002327A1 (ja) * | 2019-07-01 | 2021-01-07 | 花王株式会社 | 光吸収層及びその製造方法、光電変換素子、並びに中間バンド型太陽電池 |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201416042D0 (en) * | 2014-09-10 | 2014-10-22 | Oxford Photovoltaics Ltd | Hybrid Organic-Inorganic Perovskite Compounds |
WO2016187340A1 (en) * | 2015-05-19 | 2016-11-24 | Alliance For Sustainable Energy, Llc | Organo-metal halide perovskites films and methods of making the same |
KR101869915B1 (ko) | 2015-06-25 | 2018-06-25 | 재단법인 멀티스케일 에너지시스템 연구단 | 할로겐화 납 어덕트 화합물 및 이를 이용한 페로브스카이트 소자 |
CN105118854B (zh) * | 2015-07-01 | 2019-03-01 | 京东方科技集团股份有限公司 | 金属氧化物半导体薄膜、薄膜晶体管、制备方法及装置 |
CN108368136A (zh) | 2015-12-16 | 2018-08-03 | 国立大学法人京都大学 | 络合物及钙钛矿材料、以及使用该络合物或者钙钛矿材料的钙钛矿型太阳能电池 |
JP6181261B1 (ja) | 2016-09-13 | 2017-08-16 | 株式会社東芝 | 光電変換素子 |
KR101908708B1 (ko) * | 2016-10-12 | 2018-10-17 | 성균관대학교산학협력단 | 페로브스카이트 나노결정 박막, 이의 제조 방법 및 이를 포함하는 발광 소자 |
CN108258117B (zh) * | 2016-12-28 | 2020-03-17 | 中南大学 | 一种稳定的高性能钙钛矿光电探测器及其制备方法 |
KR102349097B1 (ko) * | 2016-12-29 | 2022-01-10 | 조인트 스톡 컴퍼니 크라스노야르스크 하이드로파워 플랜트 (제이에스씨 크라스노야르스크 에이치피피) | 페로브스카이트 구조의 흡광 물질을 생성하는 방법 및 이의 제조를 위한 가변 조성의 액체 폴리할로겐화물 |
KR101902165B1 (ko) * | 2016-12-29 | 2018-10-01 | 경희대학교 산학협력단 | 코어-쉘 구조의 페로브스카이트 나노결정 입자 및 그의 제조 방법 |
CN106910828B (zh) * | 2017-01-12 | 2019-10-11 | 华南师范大学 | 一种具有双层钙钛矿薄膜结构的太阳能电池及其制备方法 |
US20180282861A1 (en) * | 2017-03-14 | 2018-10-04 | Korea Research Institute Of Chemical Technology | Porous metal halide film, fabrication method thereof, and fabrication method of organometal halide having perovskite structure using the same |
KR102463610B1 (ko) * | 2017-05-02 | 2022-11-03 | 현대자동차주식회사 | 안정성이 우수한 고효율의 페로브스카이트 태양전지 |
CN109148687B (zh) * | 2017-06-16 | 2023-02-07 | 韩国化学研究院 | 包含宽带隙的钙钛矿系太阳能电池及其制造方法 |
CN109148695B (zh) * | 2017-06-28 | 2020-06-23 | Tcl科技集团股份有限公司 | 一种金属氧化物纳米颗粒薄膜的制备方法及电学器件 |
KR101922974B1 (ko) * | 2017-07-04 | 2019-02-27 | 포항공과대학교 산학협력단 | 곁사슬이 치환된 억셉터 단량체를 포함하는 전도성 고분자 및 그를 포함하는 페로브스카이트 태양전지 |
CN108373483B (zh) * | 2018-02-22 | 2021-01-15 | 河海大学 | 锡基钙钛矿及其制备方法、太阳能电池 |
CN109148737B (zh) * | 2018-08-01 | 2021-01-26 | 清华大学 | 前驱体、钙钛矿材料的制备方法、太阳能电池以及提高钙钛矿前驱体稳定性的方法 |
US11282700B2 (en) | 2019-04-17 | 2022-03-22 | University Of Kentucky Research Foundation | Method for manufacturing perovskite-based devices in ambient air |
KR102351553B1 (ko) * | 2019-07-05 | 2022-01-17 | 울산과학기술원 | 2가 유기 양이온을 함유하는 페로브스카이트 화합물 및 이를 포함하는 소자 |
CN110552065B (zh) * | 2019-09-19 | 2020-11-24 | 华中科技大学 | 一种链状碘化物材料及其制备与应用 |
KR102540686B1 (ko) * | 2020-12-03 | 2023-06-07 | 한국전자기술연구원 | 페로브스카이트 화합물 분말의 제조방법 |
KR20220170310A (ko) * | 2021-06-22 | 2022-12-29 | 한국화학연구원 | 페로브스카이트 복합체 |
CN114195705A (zh) * | 2021-12-09 | 2022-03-18 | 山西大学 | 一种二维双层dj型铅溴杂化钙钛矿及制备方法和应用 |
CN114276289A (zh) * | 2021-12-24 | 2022-04-05 | 山西大学 | 一种二维单层dj型铅溴杂化钙钛矿及制备方法和应用 |
CN114843406B (zh) * | 2022-04-02 | 2024-05-24 | 湖北文理学院 | 有机无机杂化钙钛矿薄膜的制备方法及半透明太阳能电池的制备方法 |
KR102624559B1 (ko) * | 2023-04-20 | 2024-01-15 | 한국화학연구원 | 페로브스카이트 물질 대량생산 방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013171517A1 (en) * | 2012-05-18 | 2013-11-21 | Isis Innovation Limited | Optoelectronic devices with organometal perovskites with mixed anions |
US20150122314A1 (en) * | 2012-05-18 | 2015-05-07 | Isis Innovation Limited | Optoelectronic device comprising porous scaffold material and perovskites |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5871579A (en) | 1997-09-25 | 1999-02-16 | International Business Machines Corporation | Two-step dipping technique for the preparation of organic-inorganic perovskite thin films |
US6429318B1 (en) | 2000-02-07 | 2002-08-06 | International Business Machines Corporaiton | Layered organic-inorganic perovskites having metal-deficient inorganic frameworks |
US7105360B2 (en) | 2002-03-08 | 2006-09-12 | International Business Machines Corporation | Low temperature melt-processing of organic-inorganic hybrid |
US8664513B2 (en) | 2007-10-12 | 2014-03-04 | OmniPV, Inc. | Solar modules with enhanced efficiencies via use of spectral concentrators |
US8840809B2 (en) | 2011-06-01 | 2014-09-23 | Kai Shum | Solution-based synthesis of CsSnI3 thin films |
KR101351303B1 (ko) * | 2011-08-04 | 2014-01-16 | 포항공과대학교 산학협력단 | 고 전도도 정공전달물질 및 이를 이용한 염료감응 태양전지 |
CN102544216B (zh) * | 2012-01-12 | 2013-11-13 | 上海交通大学 | 在玻璃基板上制备BiFeO3铁电薄膜光伏电池的方法 |
WO2013126385A1 (en) * | 2012-02-21 | 2013-08-29 | Northwestern University | Photoluminescent compounds |
JP6061484B2 (ja) | 2012-03-27 | 2017-01-18 | 株式会社Screenセミコンダクターソリューションズ | 基板洗浄装置およびそれを備えた基板処理装置 |
KR20130110025A (ko) | 2012-03-28 | 2013-10-08 | 강선문 | 선저에 공기공동으로 인한 침수표면적 감소로 인한 마찰저항 저감장치를 구비하는 선박 |
ES2566914T3 (es) * | 2012-05-18 | 2016-04-18 | Isis Innovation Limited | Dispositivo fotovoltaico que comprende perovskitas |
WO2014097299A1 (en) * | 2012-12-20 | 2014-06-26 | Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. | Perovskite schottky type solar cell |
CN103107242B (zh) * | 2013-01-29 | 2015-12-02 | 上海交通大学 | 在玻璃基板上制备钒酸铋太阳能电池的方法 |
CN103346018B (zh) | 2013-06-26 | 2016-08-17 | 中国科学院青岛生物能源与过程研究所 | 通过固液反应制备具有钙钛矿结构的碘化物太阳能电池 |
WO2016172211A1 (en) | 2015-04-20 | 2016-10-27 | The Regents Of The University Of California | Perovskite-based optoelectronic device employing non-doped small molecule hole transport materials |
-
2014
- 2014-12-23 KR KR1020167016633A patent/KR101893493B1/ko active IP Right Grant
- 2014-12-23 KR KR1020187021016A patent/KR101966245B1/ko active IP Right Grant
- 2014-12-23 CN CN201480070171.XA patent/CN105830228B/zh active Active
- 2014-12-23 US US15/102,403 patent/US10243141B2/en active Active
- 2014-12-23 JP JP2016538008A patent/JP6339203B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013171517A1 (en) * | 2012-05-18 | 2013-11-21 | Isis Innovation Limited | Optoelectronic devices with organometal perovskites with mixed anions |
US20150122314A1 (en) * | 2012-05-18 | 2015-05-07 | Isis Innovation Limited | Optoelectronic device comprising porous scaffold material and perovskites |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019175970A (ja) * | 2018-03-28 | 2019-10-10 | 三菱ケミカル株式会社 | 光電変換素子及び太陽電池モジュール |
WO2021002327A1 (ja) * | 2019-07-01 | 2021-01-07 | 花王株式会社 | 光吸収層及びその製造方法、光電変換素子、並びに中間バンド型太陽電池 |
WO2021001906A1 (ja) * | 2019-07-01 | 2021-01-07 | 花王株式会社 | 光吸収層及びその製造方法、光電変換素子、並びに中間バンド型太陽電池 |
Also Published As
Publication number | Publication date |
---|---|
KR20160090845A (ko) | 2016-08-01 |
CN105830228B (zh) | 2017-09-22 |
KR101966245B1 (ko) | 2019-04-08 |
US10243141B2 (en) | 2019-03-26 |
JP6339203B2 (ja) | 2018-06-06 |
CN105830228A (zh) | 2016-08-03 |
US20160322591A1 (en) | 2016-11-03 |
KR101893493B1 (ko) | 2018-08-30 |
KR20180085833A (ko) | 2018-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6339203B2 (ja) | 無機・有機ハイブリッドペロブスカイト化合物の前駆物質 | |
KR101962168B1 (ko) | 무 /유기 하이브리드 페로브스카이트 화합물 막의 제조방법 | |
JP6564001B2 (ja) | 光吸収構造体が備えられた太陽電池 | |
KR102036239B1 (ko) | 와이드 밴드갭을 포함하는 페로브스카이트계 태양전지 및 이의 제조방법 | |
KR101810155B1 (ko) | 고효율 페로브스카이트 화합물계 막의 제조방법 및 이를 포함하는 태양전지 | |
WO2015099412A1 (ko) | 무/유기 하이브리드 페로브스카이트 화합물 전구물질 | |
KR101877302B1 (ko) | 무/유기 하이브리드 페로브스카이트 화합물 막 및 이의 제조방법 | |
Zhang et al. | Interface materials for perovskite solar cells | |
KR101462025B1 (ko) | 무―유기 하이브리드 광흡수체를 이용한 태양전지의 제조방법 | |
KR20140037764A (ko) | 형상 및 다공성이 제어된 상부 광활성 층을 가진 무/유기 하이브리드 태양전지 제조방법 | |
KR20140035285A (ko) | 광흡수 구조체가 구비된 태양전지의 제조방법 | |
KR20210156593A (ko) | 향상된 안정성을 갖는 무유기 페로브스카이트 화합물 | |
KR20170114620A (ko) | 페로브스카이트 화합물 및 이를 함유하는 태양전지 | |
KR102098774B1 (ko) | 향상된 효율 및 안정성을 갖는 페로브스카이트 태양전지 및 이의 제조방법 | |
KR102208425B1 (ko) | 안정성이 향상된 페로브스카이트 태양전지 | |
KR20180106894A (ko) | 고분자, 고분자를 포함하는 유기태양전지 및 고분자를 포함하는 페로브스카이트 태양전지 | |
KR102540686B1 (ko) | 페로브스카이트 화합물 분말의 제조방법 | |
KR102182388B1 (ko) | 와이드 밴드갭을 갖는 페로브스카이트 화합물 막의 후처리 방법 | |
KR102201894B1 (ko) | 아미디니움계 페로브스카이트 화합물 막의 상 안정화 방법 | |
KR20190073885A (ko) | 전자전달체, 이를 포함하는 페로브스카이트계 태양전지 및 이의 제조방법 | |
KR20220170311A (ko) | 후열처리를 이용한 광소자 제조 방법 | |
KR20230138732A (ko) | 페로브스카이트 박막의 제조방법, 이에 의해 제조된 페로브스카이트 박막을 포함하는 소자 및 이를 이용한 태양전지의 제조방법 | |
JP2014241371A (ja) | 光電変換素子の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170531 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170622 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20170919 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171122 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180501 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180509 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6339203 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |