JP2017191934A5 - - Google Patents

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JP2017191934A5
JP2017191934A5 JP2017074988A JP2017074988A JP2017191934A5 JP 2017191934 A5 JP2017191934 A5 JP 2017191934A5 JP 2017074988 A JP2017074988 A JP 2017074988A JP 2017074988 A JP2017074988 A JP 2017074988A JP 2017191934 A5 JP2017191934 A5 JP 2017191934A5
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Japan
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insulating layer
oxide semiconductor
semiconductor layer
layer
forming
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JP2017074988A
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Japanese (ja)
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JP6987520B2 (ja
JP2017191934A (ja
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JP2017074988A 2016-04-08 2017-04-05 半導体装置 Active JP6987520B2 (ja)

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JP2021195286A JP7270711B2 (ja) 2016-04-08 2021-12-01 半導体装置

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Application Number Priority Date Filing Date Title
JP2016078286 2016-04-08
JP2016078347 2016-04-08
JP2016078347 2016-04-08
JP2016078286 2016-04-08

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JP2021195286A Division JP7270711B2 (ja) 2016-04-08 2021-12-01 半導体装置

Publications (3)

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JP2017191934A JP2017191934A (ja) 2017-10-19
JP2017191934A5 true JP2017191934A5 (OSRAM) 2020-05-14
JP6987520B2 JP6987520B2 (ja) 2022-01-05

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JP2017074988A Active JP6987520B2 (ja) 2016-04-08 2017-04-05 半導体装置
JP2021195286A Active JP7270711B2 (ja) 2016-04-08 2021-12-01 半導体装置
JP2023071278A Withdrawn JP2023099557A (ja) 2016-04-08 2023-04-25 半導体装置
JP2024176875A Pending JP2024180452A (ja) 2016-04-08 2024-10-09 半導体装置

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JP2021195286A Active JP7270711B2 (ja) 2016-04-08 2021-12-01 半導体装置
JP2023071278A Withdrawn JP2023099557A (ja) 2016-04-08 2023-04-25 半導体装置
JP2024176875A Pending JP2024180452A (ja) 2016-04-08 2024-10-09 半導体装置

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US (3) US11302717B2 (OSRAM)
JP (4) JP6987520B2 (OSRAM)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102854138B1 (ko) * 2017-11-02 2025-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102550633B1 (ko) * 2018-05-04 2023-07-04 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조방법
JP7410935B2 (ja) 2018-05-24 2024-01-10 ザ リサーチ ファウンデーション フォー ザ ステイト ユニバーシティー オブ ニューヨーク 容量性センサ
US11251224B2 (en) * 2018-10-31 2022-02-15 Samsung Display Co., Ltd. Display device and method of fabricating the same
WO2020089733A1 (ja) * 2018-11-02 2020-05-07 株式会社半導体エネルギー研究所 半導体装置
TW202133465A (zh) * 2020-02-14 2021-09-01 晶元光電股份有限公司 聲波元件及其形成方法
US20210376156A1 (en) * 2020-05-29 2021-12-02 Taiwan Semiconductor Manufacturing Company Limited Raised source/drain oxide semiconducting thin film transistor and methods of making the same
DE102021108615A1 (de) * 2020-05-29 2021-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Erhöhter source/drain-oxidhalbleiterdünnfilmtransistor und verfahren zur herstellung davon
KR20220089806A (ko) * 2020-12-21 2022-06-29 삼성디스플레이 주식회사 발광 소자의 제조 방법, 이를 이용하여 제조된 발광 소자, 및 이를 포함하는 표시 장치
TWI813944B (zh) * 2021-02-08 2023-09-01 友達光電股份有限公司 主動元件基板及主動元件基板的製造方法
CN112882606B (zh) * 2021-03-04 2022-12-27 业成科技（成都）有限公司 触控面板
KR102690226B1 (ko) * 2022-06-16 2024-08-05 한국생산기술연구원 박막 트랜지스터 및 이의 제조 방법
JP7410261B1 (ja) 2022-12-08 2024-01-09 日機装株式会社 半導体発光素子および半導体発光素子の製造方法

Family Cites Families (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3537854B2 (ja) * 1992-12-29 2004-06-14 エルジー フィリップス エルシーディー カンパニー リミテッド 薄膜トランジスタの製造方法
JP4566578B2 (ja) * 2003-02-24 2010-10-20 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法
JP4108633B2 (ja) * 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
TWI336921B (en) * 2003-07-18 2011-02-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
KR101123097B1 (ko) * 2003-10-28 2012-03-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치의 제조방법
WO2005041311A1 (en) * 2003-10-28 2005-05-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same, and liquid crystal television reciever
WO2005050597A1 (en) * 2003-11-14 2005-06-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
JP5126729B2 (ja) 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
TWI472037B (zh) * 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US8900970B2 (en) * 2006-04-28 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a flexible substrate
KR101345376B1 (ko) * 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
US20090278120A1 (en) * 2008-05-09 2009-11-12 Korea Institute Of Science And Technology Thin Film Transistor
KR100963027B1 (ko) * 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP5616038B2 (ja) * 2008-07-31 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI495108B (zh) * 2008-07-31 2015-08-01 Semiconductor Energy Lab 半導體裝置的製造方法
JP2010056541A (ja) * 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TWI875442B (zh) * 2008-07-31 2025-03-01 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
TWI642113B (zh) * 2008-08-08 2018-11-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR20100023151A (ko) * 2008-08-21 2010-03-04 삼성모바일디스플레이주식회사 박막 트랜지스터 및 그 제조방법
KR101999970B1 (ko) * 2008-09-19 2019-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN103928476A (zh) * 2008-10-03 2014-07-16 株式会社半导体能源研究所 显示装置及其制造方法
JP5552753B2 (ja) * 2008-10-08 2014-07-16 ソニー株式会社 薄膜トランジスタおよび表示装置
JP5361651B2 (ja) * 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8704216B2 (en) * 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8766269B2 (en) * 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
WO2011007677A1 (en) 2009-07-17 2011-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011027723A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP3217435A1 (en) * 2009-09-16 2017-09-13 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
JP5679143B2 (ja) * 2009-12-01 2015-03-04 ソニー株式会社 薄膜トランジスタならびに表示装置および電子機器
WO2011068016A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
IN2012DN04871A (OSRAM) * 2009-12-11 2015-09-25 Semiconductor Energy Laoboratory Co Ltd
US20120248450A1 (en) * 2009-12-17 2012-10-04 Sharp Kabushiki Kaisha Active matrix substrate and method for producing same
EP2519969A4 (en) * 2009-12-28 2016-07-06 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
CN106098788B (zh) * 2010-04-02 2020-10-16 株式会社半导体能源研究所 半导体装置
US9147768B2 (en) * 2010-04-02 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor and a metal oxide film
US8629438B2 (en) * 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101862808B1 (ko) * 2010-06-18 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
DE112011102644B4 (de) 2010-08-06 2019-12-05 Semiconductor Energy Laboratory Co., Ltd. Integrierte Halbleiterschaltung
US9252279B2 (en) 2011-08-31 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102100425B1 (ko) * 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102034911B1 (ko) * 2012-01-25 2019-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US20130207111A1 (en) 2012-02-09 2013-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device
JP2013201428A (ja) 2012-02-23 2013-10-03 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US9276121B2 (en) * 2012-04-12 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9006024B2 (en) * 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9236408B2 (en) * 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
CN107591316B (zh) * 2012-05-31 2021-06-08 株式会社半导体能源研究所 半导体装置
US8901557B2 (en) * 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9153699B2 (en) * 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
KR20150029000A (ko) 2012-06-29 2015-03-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102161077B1 (ko) * 2012-06-29 2020-09-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6310194B2 (ja) * 2012-07-06 2018-04-11 株式会社半導体エネルギー研究所 半導体装置
JP6006558B2 (ja) * 2012-07-17 2016-10-12 株式会社半導体エネルギー研究所 半導体装置及びその製造方法
JP6134598B2 (ja) * 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
WO2014024808A1 (en) * 2012-08-10 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102171650B1 (ko) * 2012-08-10 2020-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US9245958B2 (en) * 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102279459B1 (ko) 2012-10-24 2021-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
IN2015DN03772A (OSRAM) * 2012-11-08 2015-10-02 Semiconductor Energy Lab
TWI614813B (zh) 2013-01-21 2018-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP6298662B2 (ja) * 2013-03-14 2018-03-20 株式会社半導体エネルギー研究所 半導体装置
US10566455B2 (en) * 2013-03-28 2020-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20140299873A1 (en) 2013-04-05 2014-10-09 Semiconductor Energy Laboratory Co., Ltd. Single-crystal oxide semiconductor, thin film, oxide stack, and formation method thereof
US9293599B2 (en) * 2013-05-20 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
DE102014019794B4 (de) * 2013-05-20 2024-10-24 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
JP6426379B2 (ja) 2013-06-19 2018-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102290801B1 (ko) * 2013-06-21 2021-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6232219B2 (ja) 2013-06-28 2017-11-15 東京エレクトロン株式会社 多層保護膜の形成方法
JP6386323B2 (ja) * 2013-10-04 2018-09-05 株式会社半導体エネルギー研究所 半導体装置
US9590111B2 (en) * 2013-11-06 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
JP6537264B2 (ja) * 2013-12-12 2019-07-03 株式会社半導体エネルギー研究所 半導体装置
KR20220163502A (ko) * 2013-12-26 2022-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9318618B2 (en) * 2013-12-27 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015188062A (ja) * 2014-02-07 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
JP6545976B2 (ja) * 2014-03-07 2019-07-17 株式会社半導体エネルギー研究所 半導体装置
KR102186576B1 (ko) * 2014-03-21 2020-12-04 삼성디스플레이 주식회사 액정 표시 패널 및 이의 제조 방법
WO2015159179A1 (en) 2014-04-18 2015-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9780226B2 (en) * 2014-04-25 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI666776B (zh) 2014-06-20 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置以及包括該半導體裝置的顯示裝置
KR102582523B1 (ko) * 2015-03-19 2023-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US10056497B2 (en) * 2015-04-15 2018-08-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

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