JP2017188606A5 - - Google Patents

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Publication number
JP2017188606A5
JP2017188606A5 JP2016077579A JP2016077579A JP2017188606A5 JP 2017188606 A5 JP2017188606 A5 JP 2017188606A5 JP 2016077579 A JP2016077579 A JP 2016077579A JP 2016077579 A JP2016077579 A JP 2016077579A JP 2017188606 A5 JP2017188606 A5 JP 2017188606A5
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JP
Japan
Prior art keywords
transistor
semiconductor device
terminal
semiconductor
main terminal
Prior art date
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JP2016077579A
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English (en)
Japanese (ja)
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JP6664261B2 (ja
JP2017188606A (ja
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Priority claimed from JP2016077579A external-priority patent/JP6664261B2/ja
Priority to JP2016077579A priority Critical patent/JP6664261B2/ja
Priority to US15/460,408 priority patent/US10040283B2/en
Priority to EP17162692.2A priority patent/EP3229271B1/en
Priority to BR102017006334-8A priority patent/BR102017006334B1/pt
Priority to RU2017111580A priority patent/RU2679650C2/ru
Priority to KR1020170044588A priority patent/KR20170115448A/ko
Priority to CN201710222193.9A priority patent/CN107275326B/zh
Publication of JP2017188606A publication Critical patent/JP2017188606A/ja
Publication of JP2017188606A5 publication Critical patent/JP2017188606A5/ja
Publication of JP6664261B2 publication Critical patent/JP6664261B2/ja
Application granted granted Critical
Active legal-status Critical Current
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JP2016077579A 2016-04-07 2016-04-07 半導体装置及び液体吐出ヘッド用基板 Active JP6664261B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2016077579A JP6664261B2 (ja) 2016-04-07 2016-04-07 半導体装置及び液体吐出ヘッド用基板
US15/460,408 US10040283B2 (en) 2016-04-07 2017-03-16 Semiconductor device and liquid discharge head substrate
EP17162692.2A EP3229271B1 (en) 2016-04-07 2017-03-24 Semiconductor device and liquid discharge head substrate
BR102017006334-8A BR102017006334B1 (pt) 2016-04-07 2017-03-28 Dispositivo semicondutor e substrato para cabeça de descarga de líquido
RU2017111580A RU2679650C2 (ru) 2016-04-07 2017-04-06 Полупроводниковое устройство и подложка головки выброса жидкости
KR1020170044588A KR20170115448A (ko) 2016-04-07 2017-04-06 반도체 장치 및 액체 토출 헤드용 기판
CN201710222193.9A CN107275326B (zh) 2016-04-07 2017-04-07 半导体装置和液体排出头基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016077579A JP6664261B2 (ja) 2016-04-07 2016-04-07 半導体装置及び液体吐出ヘッド用基板

Publications (3)

Publication Number Publication Date
JP2017188606A JP2017188606A (ja) 2017-10-12
JP2017188606A5 true JP2017188606A5 (https=) 2019-04-25
JP6664261B2 JP6664261B2 (ja) 2020-03-13

Family

ID=58448357

Family Applications (1)

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JP2016077579A Active JP6664261B2 (ja) 2016-04-07 2016-04-07 半導体装置及び液体吐出ヘッド用基板

Country Status (6)

Country Link
US (1) US10040283B2 (https=)
EP (1) EP3229271B1 (https=)
JP (1) JP6664261B2 (https=)
KR (1) KR20170115448A (https=)
CN (1) CN107275326B (https=)
RU (1) RU2679650C2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102227666B1 (ko) * 2017-05-31 2021-03-12 주식회사 키 파운드리 고전압 반도체 소자
JP6971877B2 (ja) * 2018-02-20 2021-11-24 ルネサスエレクトロニクス株式会社 半導体装置
TWI654733B (zh) * 2018-06-04 2019-03-21 茂達電子股份有限公司 靜電放電保護電路
JP7614892B2 (ja) * 2021-03-11 2025-01-16 キヤノン株式会社 半導体装置、液体吐出ヘッドおよび液体吐出装置
CN115871338B (zh) * 2021-09-30 2026-03-13 群创光电股份有限公司 具有记忆单元的加热器装置及其操作方法
CN119028943B (zh) * 2023-05-18 2025-10-03 长鑫存储技术有限公司 反熔丝结构、反熔丝阵列及其操作方法、存储器
CN117594592A (zh) * 2023-12-20 2024-02-23 芯联先锋集成电路制造(绍兴)有限公司 一种半导体集成芯片及其制作方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2638571B2 (ja) * 1995-06-22 1997-08-06 日本電気株式会社 半導体装置の入力保護装置
EP0851552A1 (en) 1996-12-31 1998-07-01 STMicroelectronics S.r.l. Protection ciruit for an electric supply line in a semiconductor integrated device
JPH1165088A (ja) 1997-08-19 1999-03-05 Canon Inc デバイス製造用の基板
US7910950B1 (en) * 2006-04-13 2011-03-22 National Semiconductor Corporation High voltage ESD LDMOS-SCR with gate reference voltage
JP2008130994A (ja) * 2006-11-24 2008-06-05 Toshiba Corp 静電保護回路
CN101689545B (zh) * 2007-06-21 2012-07-04 Nxp股份有限公司 Esd保护电路
JP2009071261A (ja) * 2007-08-20 2009-04-02 Toshiba Corp 半導体装置
DE102008001368A1 (de) * 2008-04-24 2009-10-29 Robert Bosch Gmbh Flächenoptimierte ESD-Schutzschaltung
KR20100041096A (ko) * 2008-10-13 2010-04-22 주식회사 동부하이텍 반도체 메모리 제조 방법
US20100232081A1 (en) 2009-03-12 2010-09-16 Advanced Analogic Technologies, Inc. Method and Apparatus for Over-voltage Protection With Breakdown-Voltage Tracking Sense Element
JP5981815B2 (ja) 2012-09-18 2016-08-31 キヤノン株式会社 記録ヘッド用基板及び記録装置
JP6077836B2 (ja) 2012-11-20 2017-02-08 キヤノン株式会社 半導体装置、液体吐出ヘッド、液体吐出カートリッジ及び液体吐出装置
US9608107B2 (en) * 2014-02-27 2017-03-28 Vanguard International Semiconductor Corporation Method and apparatus for MOS device with doped region
JP6450169B2 (ja) 2014-04-02 2019-01-09 キヤノン株式会社 半導体装置、液体吐出ヘッド、液体吐出カードリッジ及び液体吐出装置

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