JP2017188606A - 半導体装置及び液体吐出ヘッド用基板 - Google Patents
半導体装置及び液体吐出ヘッド用基板 Download PDFInfo
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Abstract
【解決手段】第1の主端子、第2の主端子及び第1の制御端子を含む第1のトランジスタと、第3の主端子、第4の主端子及び第2の制御端子を含む第2のトランジスタと、第1の抵抗素子と、を含む半導体装置であって、第1の主端子と第3の主端子とが、第1の電源ラインに接続され、第2の主端子と第1の抵抗素子の一端とが、第2の電源ラインに接続され、第1の制御端子と第2の制御端子と第4の主端子と第1の抵抗素子の他端とが、1つのノードを構成するように相互に接続され、第3の主端子とノードとの間の容量結合によって第3の主端子の電位変化が第1の制御端子に伝達され、これによって第1のトランジスタがオンする。
【選択図】図1
Description
図1、2を参照して、本発明の実施形態による半導体装置の構造について説明する。図1は、本発明の第1の実施形態における半導体装置100の回路構成を示す図である。半導体装置100は、静電気放電(Electro−Static Discharge:ESD)から内部回路を保護するための保護回路を構成する。半導体装置100は、トランジスタ103、トランジスタ104、及び、抵抗素子105を含む。トランジスタ103の一方の主端子(ドレイン)とトランジスタ104の一方の主端子(ドレイン)とは、電源ライン111に接続される。トランジスタ103の他方の主端子(ソース)と、抵抗素子105の一端とは、電源ライン112に接続される。トランジスタ103の制御端子(ゲート)と、トランジスタ104の制御端子(ゲート)及び他方の主端子(ソース)と抵抗素子105の他端とが、1つのノード110を構成するように相互に接続される。電源ライン111には、端子101から高電圧VHが供給され、電源ライン112には端子102から接地電位が供給される。トランジスタ103及びトランジスタ104には、通常のトランジスタよりも耐圧の高い高耐圧素子であるDMOS(Double−Diffused MOS)トランジスタが用いられる。
図3、4を参照して、本発明の実施形態による半導体装置の構造について説明する。図3は、本発明の第2の実施形態における半導体装置300の回路構成を示す図である。半導体装置300は、アンチヒューズ素子を構成する容量素子Caと、アンチヒューズ素子を保護する保護回路として上述の半導体装置100と同様の構成を備えるトランジスタ103、104、及び、抵抗素子105を含む。また、半導体装置300は、トランジスタMD1、トランジスタMP1、トランジスタMN1、及び、抵抗素子Rpを含む。図3は、アンチヒューズ素子に情報が書き込まれる前、換言すると容量素子Caが破壊される前の状態を示している。
図6を参照して、本発明の実施形態による液体吐出ヘッド用基板の構造について説明する。図6は、本発明の第3の実施形態における液体吐出ヘッド用基板600の回路構成を示す図である。液体吐出ヘッド用基板600は、発熱素子601、トランジスタ602、及び、制御回路603と、上述の第2の実施形態の半導体装置300と同様の回路構成と、を含む。発熱素子601は、記録剤である液体を加熱することによってエネルギを与え、液体を吐出口から吐出させる。発熱素子601は、発熱することによって液体にエネルギを与える発熱体であってもよい。また、発熱素子601の代わりに、変形することによって記録剤である液体にエネルギを与える圧電素子を用いてもよい。図6において、発熱素子601は、熱エネルギを液体に与える抵抗素子として描かれている。トランジスタ602は、発熱素子601を駆動するためのトランジスタである。また、制御回路603は、トランジスタ602を制御することによって液体の吐出を制御する。発熱素子601の一端は、電源ライン111と同様に高電圧VHに接続され、他端はトランジスタ602の主端子(ドレイン)に接続される。トランジスタ602のもう1つの主端子(ソース)は電源ライン112に接続され、接地電位が供給される。トランジスタ602の制御端子(ゲート)は制御回路603に接続される。また、制御回路603は、ロジック電源電圧VDDに接続される。その他の回路を構成する要素は、上述の第2の実施形態と同じであってもよい。
Claims (20)
- 第1の主端子、第2の主端子及び第1の制御端子を含む第1のトランジスタと、第3の主端子、第4の主端子及び第2の制御端子を含む第2のトランジスタと、第1の抵抗素子と、を含む半導体装置であって、
前記第1の主端子と前記第3の主端子とが、第1の電源ラインに接続され、
前記第2の主端子と前記第1の抵抗素子の一端とが、第2の電源ラインに接続され、
前記第1の制御端子と前記第2の制御端子と前記第4の主端子と前記第1の抵抗素子の他端とが、1つのノードを構成するように相互に接続され、
前記第3の主端子と前記ノードとの間の容量結合によって前記第3の主端子の電位変化が前記第1の制御端子に伝達され、これによって前記第1のトランジスタがオンすることを特徴とする半導体装置。 - 前記第1のトランジスタ及び前記第2のトランジスタが、それぞれDMOS(Double−Diffused MOS)トランジスタであることを特徴とする請求項1に記載の半導体装置。
- 前記第1のトランジスタ及び前記第2のトランジスタが、それぞれLDMOS(Laterally Diffused MOS)トランジスタであることを特徴とする請求項2に記載の半導体装置。
- 前記第1のトランジスタ及び前記第2のトランジスタが、それぞれLOCOSオフセット構造を有することを特徴とする請求項1乃至3の何れか1項に記載の半導体装置。
- 前記第1のトランジスタ及び前記第2のトランジスタのそれぞれが、
半導体基板に配された、第1の導電型の第1の半導体領域と、
前記半導体基板に配され、前記第1の半導体領域の隣に配された第2の導電型の第2の半導体領域と、
前記第1の半導体領域に配された第2の導電型のソース領域と、
前記第2の半導体領域に配された第2の導電型のドレイン領域と、
前記第1の半導体領域の上に配された第1の部分、ならびに、前記第2の半導体領域の上に配された第2の部分及び第3の部分を含むゲート電極と、
前記第1の部分と前記第1の半導体領域との間に配された第1の膜厚を有する第4の部分、ならびに、前記第2の部分と前記第2の半導体領域との間に配され、前記第1の膜厚を有する第5の部分及び前記第3の部分と前記第2の半導体領域との間に配され、前記第1の膜厚より厚い第2の膜厚を有する第6の部分を含む絶縁膜と、を含むことを特徴とする請求項1乃至3の何れか1項に記載の半導体装置。 - 前記半導体装置が、
第1の端子及び第2の端子を含み、前記第1の端子が前記第1の電源ラインに接続される容量素子と、
第5の主端子、第6の主端子及び第3の制御端子を含み、前記第5の主端子が前記第2の端子に接続され、前記第6の主端子が前記第2の電源ラインに接続される第3のトランジスタと、
第4のトランジスタを含む少なくとも1つのトランジスタによって構成され、前記第3の制御端子へ制御信号を供給することによって前記容量素子を絶縁破壊する駆動部と、
を更に含むことを特徴とする請求項1乃至5の何れか1項に記載の半導体装置。 - 前記第1のトランジスタ及び前記第2のトランジスタの耐圧が前記第4のトランジスタの耐圧よりも高いことを特徴とする請求項6に記載の半導体装置。
- 前記第3のトランジスタの耐圧が前記第4のトランジスタの耐圧よりも高いことを特徴とする請求項6又は7に記載の半導体装置。
- 前記第3のトランジスタがDMOSトランジスタであることを特徴とする請求項6乃至8の何れか1項に記載の半導体装置。
- 前記第3のトランジスタがLDMOSトランジスタであることを特徴とする請求項9に記載の半導体装置。
- 前記第3のトランジスタがLOCOSオフセット構造を有することを特徴とする請求項6乃至10の何れか1項に記載の半導体装置。
- 前記容量素子がMOS構造を有し、
前記第1のトランジスタのゲート絶縁膜の膜厚、前記第2のトランジスタのゲート絶縁膜の膜厚、前記第3のトランジスタのゲート絶縁膜の膜厚、前記第4のトランジスタのゲート絶縁膜の膜厚、及び、前記容量素子を構成する絶縁膜の膜厚が互いに等しいことを特徴とする請求項6乃至11の何れか1項に記載の半導体装置。 - 前記半導体装置が、前記第1の電源ラインと前記第2の端子との間に接続される第2の抵抗素子を更に含むことを特徴とする請求項6乃至12の何れか1項に記載の半導体装置。
- 請求項1乃至5の何れか1項に記載の半導体装置と、
記録剤を加熱するための発熱素子と、
前記発熱素子を駆動するための第5のトランジスタと、
を含むことを特徴とする液体吐出ヘッド用基板。 - 請求項6乃至12の何れか1項に記載の半導体装置と、
記録剤を加熱するための発熱素子と、
前記発熱素子を駆動するための第5のトランジスタと、
を含むことを特徴とする液体吐出ヘッド用基板。 - 前記第5のトランジスタの耐圧が前記第4のトランジスタの耐圧よりも高いことを特徴とする請求項15に記載の液体吐出ヘッド用基板。
- 前記第4のトランジスタのゲート絶縁膜の膜厚と、前記第5のトランジスタのゲート絶縁膜の膜厚とが互いに等しいことを特徴とする請求項15又は16に記載の液体吐出ヘッド用基板。
- 前記第5のトランジスタがDMOSトランジスタであることを特徴とする請求項14乃至17の何れか1項に記載の液体吐出ヘッド用基板。
- 前記第5のトランジスタがLDMOSトランジスタであることを特徴とする請求項18に記載の液体吐出ヘッド用基板。
- 前記第5のトランジスタがLOCOSオフセット構造を有することを特徴とする請求項14乃至19の何れか1項に記載の液体吐出ヘッド用基板。
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