JP2017183661A - 光電変換装置およびカメラ - Google Patents
光電変換装置およびカメラ Download PDFInfo
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Abstract
Description
2 裏面
3 中間面
100 半導体層
10 素子分離部
12 絶縁体
20 画素分離部
21 溝
111、112、113 素子領域
101、102、103 分離領域
121、122、123、124 半導体領域
Claims (14)
- 第1面と、前記第1面とは反対側の第2面とを有する半導体層と、
前記第1面の側に配され、絶縁体によって構成された第1分離部と、
前記第1分離部よりも前記第2面の側に位置する前記第2面に沿った平面を通って配され、前記半導体層に設けられた溝によって構成された第2分離部と、を備える光電変換装置であって、
前記半導体層は、前記第1分離部によって画定された素子領域として、第1光電変換素子が設けられた第1素子領域と、第2光電変換素子が設けられた第2素子領域と、前記第1素子領域と前記第2素子領域との間に配され、前記第1素子領域および前記第2素子領域とは異なる形状を有する第3素子領域と、を含み、
前記第1分離部は、前記第1素子領域と前記第3素子領域との間に位置する第1分離領域と、前記第2素子領域と前記第3素子領域との間に位置する第2分離領域と、を含み、
前記半導体層は、前記第1面に対する法線方向において前記第1素子領域と前記第2面との間に位置する第1半導体領域と、前記法線方向において前記第2素子領域と前記第2面との間に位置する第2半導体領域と、前記法線方向において前記第3素子領域と前記第2面との間に位置する第3半導体領域と、前記法線方向おいて前記第1分離領域と前記第2面との間に位置する第4半導体領域と、を含み、
前記第2分離部は、前記法線方向において前記第2分離領域に重なる部分を有し、
前記平面では、前記第1半導体領域と前記第3半導体領域が前記第4半導体領域を介して連続しており、かつ、前記部分が前記第2半導体領域と前記第3半導体領域との間に位置することを特徴とする光電変換装置。 - 前記平面において、前記第1光電変換素子は前記第1半導体領域および前記第4半導体領域にも設けられている、請求項1に記載の光電変換装置。
- 前記平面において、前記第1光電変換素子は前記第3半導体領域にも設けられている、請求項2に記載の光電変換装置。
- 前記第1光電変換素子は信号電荷が多数キャリアである第1導電型の第1不純物領域と信号電荷が少数キャリアである第2導電型の第2不純物領域とを含み、前記第4半導体領域には前記第1導電型の不純物領域が配されている、請求項2または3に記載の光電変換装置。
- 前記部分は前記第2分離領域に接続している、請求項1乃至4のいずれか1項に記載の光電変換装置。
- 前記半導体層は、前記第1分離部によって画定された素子領域として、第3光電変換素子が設けられた第4素子領域を含み、
前記第1分離部は、前記第1素子領域と前記第4素子領域との間に位置する第3分離領域を含み、
前記第2分離部は、前記法線方向において前記第4分離領域に重なる部分を有する、請求項1乃至5のいずれか1項に記載の光電変換装置。 - 前記第2分離部の前記第4分離領域に重なる前記部分は前記第4分離領域に接続している、請求項6に記載の光電変換装置。
- 前記第2分離部の前記溝は前記第2面に連続している、請求項1乃至7のいずれか1項に記載の光電変換装置。
- 前記第3素子領域の面積は、前記第1素子領域の面積および前記第2素子領域の面積よりも小さい、請求項1乃至8のいずれか1項に記載の光電変換装置。
- 前記第3素子領域には、前記第1光電変換素子の電荷に基づく信号を生成する増幅トランジスタ、および、前記第1光電変換素子の電荷をリセットするリセットトランジスタの少なくとも一方が設けられている、請求項1乃至9のいずれか1項に記載の光電変換装置。
- 前記半導体層は、前記第1分離部によって画定された素子領域として、前記第1素子領域および前記第2素子領域に隣接する第5素子領域を有し、前記第5素子領域には、前記第1光電変換素子に電位を供給するための導電部材が接続されており、
前記法線方向において前記第5素子領域と前記第2面との間に位置する第5半導体領域は前記第1半導体領域に連続している、請求項1乃至10のいずれか1項に記載の光電変換装置。 - 前記第1素子領域および前記第2素子領域のそれぞれには、浮遊拡散領域が設けられている、請求項1乃至11のいずれか1項に記載の光電変換装置。
- 前記平面は前記第1面および前記第2面から等距離に位置する、請求項1乃至12のいずれか1項に記載の光電変換装置。
- 請求項1乃至13のいずれか1項に記載の光電変換装置は撮像装置であって、前記撮像装置から得られた信号を処理する信号処理装置、前記撮像装置から得られた信号を記憶する記憶装置、および、前記撮像装置で得られた情報を表示する表示装置の少なくともいずれかを備えるカメラ。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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JP2016072989A JP6789653B2 (ja) | 2016-03-31 | 2016-03-31 | 光電変換装置およびカメラ |
US15/468,865 US10553634B2 (en) | 2016-03-31 | 2017-03-24 | Photoelectric conversion apparatus and camera |
CN202210517086.XA CN114914260A (zh) | 2016-03-31 | 2017-03-29 | 光电转换装置以及照相机 |
CN201710197850.9A CN107275352B (zh) | 2016-03-31 | 2017-03-29 | 光电转换装置以及照相机 |
US16/717,252 US11430822B2 (en) | 2016-03-31 | 2019-12-17 | Photoelectric conversion apparatus and camera |
US17/813,510 US11791360B2 (en) | 2016-03-31 | 2022-07-19 | Photoelectric conversion apparatus and camera |
US18/465,072 US20230420474A1 (en) | 2016-03-31 | 2023-09-11 | Photoelectric conversion apparatus and camera |
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JP2016072989A JP6789653B2 (ja) | 2016-03-31 | 2016-03-31 | 光電変換装置およびカメラ |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020158322A1 (ja) * | 2019-02-01 | 2020-08-06 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、固体撮像装置及び測距装置 |
WO2020196023A1 (ja) * | 2019-03-28 | 2020-10-01 | ソニーセミコンダクタソリューションズ株式会社 | 受光装置および測距モジュール |
WO2020196024A1 (ja) * | 2019-03-28 | 2020-10-01 | ソニーセミコンダクタソリューションズ株式会社 | 受光装置および測距モジュール |
WO2022158236A1 (ja) * | 2021-01-21 | 2022-07-28 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
JP7433863B2 (ja) | 2019-11-27 | 2024-02-20 | キヤノン株式会社 | 光電変換装置、撮像システム、および移動体 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6789653B2 (ja) * | 2016-03-31 | 2020-11-25 | キヤノン株式会社 | 光電変換装置およびカメラ |
KR102498582B1 (ko) * | 2018-02-26 | 2023-02-14 | 에스케이하이닉스 주식회사 | 파티션 패턴들을 가진 이미지 센서 |
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US10893222B2 (en) * | 2018-03-29 | 2021-01-12 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device and camera system, and driving method of imaging device |
JP2019212900A (ja) * | 2018-05-31 | 2019-12-12 | パナソニックIpマネジメント株式会社 | 撮像装置 |
KR102674895B1 (ko) | 2018-10-08 | 2024-06-14 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
EP3651200B1 (en) * | 2019-09-30 | 2022-07-13 | Shenzhen Goodix Technology Co., Ltd. | Semiconductor structure of image sensor, chip and electronic apparatus |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010239117A (ja) * | 2009-03-09 | 2010-10-21 | Canon Inc | 光電変換装置およびそれを用いた撮像システム |
US20110180689A1 (en) * | 2010-01-28 | 2011-07-28 | Stmicroelectronics S.A. | Compact image sensor arrangement |
JP2013041915A (ja) * | 2011-08-12 | 2013-02-28 | Sony Corp | 固体撮像素子および製造方法、並びに電子機器 |
JP2013175494A (ja) * | 2011-03-02 | 2013-09-05 | Sony Corp | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
US20140008705A1 (en) * | 2012-07-04 | 2014-01-09 | Samsung Electronics Co., Ltd. | Semiconductor device |
JP2014086514A (ja) * | 2012-10-22 | 2014-05-12 | Canon Inc | 撮像装置、その製造方法及びカメラ |
JP2014204047A (ja) * | 2013-04-08 | 2014-10-27 | キヤノン株式会社 | 半導体装置およびその製造方法 |
JP2015126114A (ja) * | 2013-12-26 | 2015-07-06 | キヤノン株式会社 | 撮像装置の製造方法および撮像装置 |
Family Cites Families (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61263266A (ja) | 1985-05-17 | 1986-11-21 | Olympus Optical Co Ltd | 固体撮像装置 |
US6388305B1 (en) * | 1999-12-17 | 2002-05-14 | International Business Machines Corporation | Electrically programmable antifuses and methods for forming the same |
KR20040031119A (ko) * | 2002-10-04 | 2004-04-13 | (주)그래픽테크노재팬 | 화소격리영역을 갖는 이미지 센서 |
JP4539176B2 (ja) * | 2004-05-31 | 2010-09-08 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
US7605415B2 (en) * | 2004-06-07 | 2009-10-20 | Canon Kabushiki Kaisha | Image pickup device comprising photoelectric conversation unit, floating diffusion region and guard ring |
JP4742523B2 (ja) | 2004-06-14 | 2011-08-10 | ソニー株式会社 | 固体撮像素子及びその駆動方法 |
JP4756839B2 (ja) * | 2004-09-01 | 2011-08-24 | キヤノン株式会社 | 固体撮像装置及びカメラ |
US8049293B2 (en) * | 2005-03-07 | 2011-11-01 | Sony Corporation | Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device |
JP4578329B2 (ja) * | 2005-06-03 | 2010-11-10 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
JP2007095917A (ja) * | 2005-09-28 | 2007-04-12 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
US7586139B2 (en) | 2006-02-17 | 2009-09-08 | International Business Machines Corporation | Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor |
JP5328207B2 (ja) * | 2008-04-01 | 2013-10-30 | キヤノン株式会社 | 固体撮像装置 |
JP5314914B2 (ja) | 2008-04-04 | 2013-10-16 | キヤノン株式会社 | 光電変換装置、撮像システム、設計方法、及び光電変換装置の製造方法 |
EP2109143B1 (en) | 2008-04-09 | 2013-05-29 | Sony Corporation | Solid-state imaging device, production method thereof, and electronic device |
JP2009272596A (ja) | 2008-04-09 | 2009-11-19 | Sony Corp | 固体撮像装置とその製造方法、及び電子機器 |
JP4759590B2 (ja) * | 2008-05-09 | 2011-08-31 | キヤノン株式会社 | 光電変換装置及びそれを用いた撮像システム |
JP5353201B2 (ja) | 2008-11-21 | 2013-11-27 | ソニー株式会社 | 固体撮像装置の製造方法 |
JP5470928B2 (ja) | 2009-03-11 | 2014-04-16 | ソニー株式会社 | 固体撮像装置の製造方法 |
JP2010225818A (ja) * | 2009-03-23 | 2010-10-07 | Toshiba Corp | 固体撮像装置及びその製造方法 |
JP5539105B2 (ja) * | 2009-09-24 | 2014-07-02 | キヤノン株式会社 | 光電変換装置およびそれを用いた撮像システム |
JP5564874B2 (ja) * | 2009-09-25 | 2014-08-06 | ソニー株式会社 | 固体撮像装置、及び電子機器 |
JP5564909B2 (ja) * | 2009-11-30 | 2014-08-06 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
JP5679653B2 (ja) * | 2009-12-09 | 2015-03-04 | キヤノン株式会社 | 光電変換装置およびそれを用いた撮像システム |
EP2518768B1 (en) * | 2009-12-26 | 2019-03-20 | Canon Kabushiki Kaisha | Solid-state imaging device and imaging system |
JP2011159757A (ja) * | 2010-01-29 | 2011-08-18 | Sony Corp | 固体撮像装置とその製造方法、固体撮像装置の駆動方法、及び電子機器 |
KR101738532B1 (ko) * | 2010-05-25 | 2017-05-22 | 삼성전자 주식회사 | 상부 고농도 p 영역을 포함하는 후면 조사형 이미지 센서 및 그 제조 방법 |
JP2012015274A (ja) * | 2010-06-30 | 2012-01-19 | Canon Inc | 固体撮像装置、及び固体撮像装置の製造方法。 |
US8378398B2 (en) * | 2010-09-30 | 2013-02-19 | Omnivision Technologies, Inc. | Photodetector isolation in image sensors |
US8101450B1 (en) * | 2010-12-13 | 2012-01-24 | Omnivision Technologies, Inc. | Photodetector isolation in image sensors |
JP2012164768A (ja) * | 2011-02-04 | 2012-08-30 | Toshiba Corp | 固体撮像装置 |
JP6003291B2 (ja) * | 2011-08-22 | 2016-10-05 | ソニー株式会社 | 固体撮像装置及び電子機器 |
JP5743837B2 (ja) * | 2011-10-07 | 2015-07-01 | キヤノン株式会社 | 光電変換装置、撮像装置および撮像システム |
US8686342B2 (en) * | 2012-04-09 | 2014-04-01 | Omnivision Technologies, Inc. | Double-sided image sensor formed on a single semiconductor wafer die |
JP2014022561A (ja) * | 2012-07-18 | 2014-02-03 | Sony Corp | 固体撮像装置、及び、電子機器 |
US9142580B2 (en) * | 2012-08-10 | 2015-09-22 | Canon Kabushiki Kaisha | Image pickup apparatus and image pickup system |
US9659991B2 (en) * | 2012-10-22 | 2017-05-23 | Canon Kabushiki Kaisha | Image capturing apparatus, manufacturing method thereof, and camera |
US9165959B2 (en) * | 2013-02-25 | 2015-10-20 | Omnivision Technologies, Inc. | Image sensor with pixel units having mirrored transistor layout |
JP2014225536A (ja) * | 2013-05-15 | 2014-12-04 | キヤノン株式会社 | 固体撮像装置及びカメラ |
US20150054997A1 (en) * | 2013-08-23 | 2015-02-26 | Aptina Imaging Corporation | Image sensors having pixel arrays with non-uniform pixel sizes |
JP6305030B2 (ja) | 2013-11-22 | 2018-04-04 | キヤノン株式会社 | 光電変換装置の製造方法 |
JP6305028B2 (ja) * | 2013-11-22 | 2018-04-04 | キヤノン株式会社 | 光電変換装置の製造方法および光電変換装置 |
JP6152060B2 (ja) | 2014-02-14 | 2017-06-21 | キヤノン株式会社 | 固体撮像装置及びカメラ |
KR102209097B1 (ko) | 2014-02-27 | 2021-01-28 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
CN103824869B (zh) * | 2014-03-17 | 2017-02-15 | 北京思比科微电子技术股份有限公司 | 一种防止图像弥散的图像传感器像素结构及其制造方法 |
KR102212138B1 (ko) * | 2014-08-19 | 2021-02-04 | 삼성전자주식회사 | 이미지 센서의 단위 픽셀과 이를 포함하는 픽셀 어레이 |
US9711558B2 (en) * | 2014-09-12 | 2017-07-18 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device with photoelectric converter |
JP2016187018A (ja) * | 2015-03-27 | 2016-10-27 | キヤノン株式会社 | 光電変換装置およびカメラ |
US9768213B2 (en) * | 2015-06-03 | 2017-09-19 | Canon Kabushiki Kaisha | Solid-state image sensor and camera |
US9653511B2 (en) * | 2015-08-11 | 2017-05-16 | Omnivision Technologies, Inc. | CMOS image sensor with peninsular ground contracts and method of manufacturing the same |
KR102481481B1 (ko) * | 2015-12-15 | 2022-12-26 | 삼성전자 주식회사 | 이미지 센서 및 그 제조 방법 |
JP6789653B2 (ja) * | 2016-03-31 | 2020-11-25 | キヤノン株式会社 | 光電変換装置およびカメラ |
JP6808348B2 (ja) * | 2016-04-28 | 2021-01-06 | キヤノン株式会社 | 光電変換装置およびカメラ |
JP7013119B2 (ja) * | 2016-07-21 | 2022-01-31 | キヤノン株式会社 | 固体撮像素子、固体撮像素子の製造方法、及び撮像システム |
KR102589016B1 (ko) * | 2016-08-25 | 2023-10-16 | 삼성전자주식회사 | 반도체 소자 |
KR20180076054A (ko) * | 2016-12-27 | 2018-07-05 | 삼성전자주식회사 | 공유 픽셀을 구비한 이미지 센서 및 그 이미지 센서를 구비한 전자 장치 |
KR20180076845A (ko) * | 2016-12-28 | 2018-07-06 | 삼성전자주식회사 | 이미지 센서 |
US10079261B1 (en) * | 2017-08-17 | 2018-09-18 | Omnivision Technologies, Inc. | Raised electrode to reduce dark current |
US10566380B2 (en) * | 2017-10-18 | 2020-02-18 | Omnivision Technologies, Inc. | Image sensor with dual trench isolation structures at different isolation structure depths |
KR102542614B1 (ko) * | 2017-10-30 | 2023-06-15 | 삼성전자주식회사 | 이미지 센서 |
US11329089B1 (en) * | 2019-06-07 | 2022-05-10 | Gigajot Technology, Inc. | Image sensor with multi-patterned isolation well |
US11355537B2 (en) * | 2019-10-16 | 2022-06-07 | Omnivision Technologies, Inc. | Vertical gate structure and layout in a CMOS image sensor |
KR20220087678A (ko) * | 2020-12-18 | 2022-06-27 | 삼성전자주식회사 | 이미지 센서 및 이미지 센싱 회로 |
FR3122057A1 (fr) * | 2021-04-15 | 2022-10-21 | Pyxalis | Matrice de Pixel à sommation analogique à obturation globale |
-
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- 2023-09-11 US US18/465,072 patent/US20230420474A1/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010239117A (ja) * | 2009-03-09 | 2010-10-21 | Canon Inc | 光電変換装置およびそれを用いた撮像システム |
US20110180689A1 (en) * | 2010-01-28 | 2011-07-28 | Stmicroelectronics S.A. | Compact image sensor arrangement |
JP2013175494A (ja) * | 2011-03-02 | 2013-09-05 | Sony Corp | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
JP2013041915A (ja) * | 2011-08-12 | 2013-02-28 | Sony Corp | 固体撮像素子および製造方法、並びに電子機器 |
US20140008705A1 (en) * | 2012-07-04 | 2014-01-09 | Samsung Electronics Co., Ltd. | Semiconductor device |
JP2014086514A (ja) * | 2012-10-22 | 2014-05-12 | Canon Inc | 撮像装置、その製造方法及びカメラ |
JP2014204047A (ja) * | 2013-04-08 | 2014-10-27 | キヤノン株式会社 | 半導体装置およびその製造方法 |
JP2015126114A (ja) * | 2013-12-26 | 2015-07-06 | キヤノン株式会社 | 撮像装置の製造方法および撮像装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020158322A1 (ja) * | 2019-02-01 | 2020-08-06 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、固体撮像装置及び測距装置 |
JPWO2020158322A1 (ja) * | 2019-02-01 | 2021-12-02 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、固体撮像装置及び測距装置 |
JP7420750B2 (ja) | 2019-02-01 | 2024-01-23 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、固体撮像装置及び測距装置 |
WO2020196023A1 (ja) * | 2019-03-28 | 2020-10-01 | ソニーセミコンダクタソリューションズ株式会社 | 受光装置および測距モジュール |
WO2020196024A1 (ja) * | 2019-03-28 | 2020-10-01 | ソニーセミコンダクタソリューションズ株式会社 | 受光装置および測距モジュール |
JP7433863B2 (ja) | 2019-11-27 | 2024-02-20 | キヤノン株式会社 | 光電変換装置、撮像システム、および移動体 |
WO2022158236A1 (ja) * | 2021-01-21 | 2022-07-28 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
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US20200127026A1 (en) | 2020-04-23 |
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