JP2017162992A - スイッチング素子 - Google Patents
スイッチング素子 Download PDFInfo
- Publication number
- JP2017162992A JP2017162992A JP2016046118A JP2016046118A JP2017162992A JP 2017162992 A JP2017162992 A JP 2017162992A JP 2016046118 A JP2016046118 A JP 2016046118A JP 2016046118 A JP2016046118 A JP 2016046118A JP 2017162992 A JP2017162992 A JP 2017162992A
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- Prior art keywords
- range
- region
- metal layer
- trench
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010410 layer Substances 0.000 claims abstract description 232
- 229910052751 metal Inorganic materials 0.000 claims abstract description 198
- 239000002184 metal Substances 0.000 claims abstract description 198
- 230000002093 peripheral effect Effects 0.000 claims abstract description 134
- 239000004065 semiconductor Substances 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 230000001681 protective effect Effects 0.000 claims abstract description 62
- 239000011229 interlayer Substances 0.000 claims abstract description 42
- 210000000746 body region Anatomy 0.000 claims description 83
- 230000015556 catabolic process Effects 0.000 claims description 23
- 239000012535 impurity Substances 0.000 claims description 13
- 238000009413 insulation Methods 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- Ceramic Engineering (AREA)
- Geometry (AREA)
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Abstract
【解決手段】 スイッチング素子であり、半導体基板が、第1素子範囲と無効範囲を有している。第1トレンチが、第1素子範囲と無効範囲に跨って第1方向に伸びている。第1素子範囲内では、各トレンチ間領域に複数の第2トレンチが設けられている。無効範囲内では、各トレンチ間領域に第2トレンチが設けられていない。トレンチ内に、ゲート電極が配置されている。無効範囲内では、層間絶縁膜にコンタクトホールが設けられていない。第1金属層が、層間絶縁膜を覆っている。絶縁保護膜が、無効範囲内の第1金属層の外周側の部分を覆っている。第2金属層が、絶縁保護膜の開口内において第1金属層に接しているとともに開口の側面に接している。
【選択図】図3
Description
12 :第2素子範囲
13 :囲繞範囲
14 :外周耐圧範囲
18 :半導体基板
22 :エミッタ領域
24 :ボディ領域
26 :ドリフト領域
27 :バッファ領域
28 :コレクタ領域
29 :周辺p型領域
30 :ゲート電極
32 :ゲート絶縁膜
34 :終端領域
36 :ガードリング
40 :トレンチ
40a:第1トレンチ
40b:第2トレンチ
42 :トレンチ間領域
43 :セル領域
51 :オーミック金属層
52 :表面金属層
54 :下部電極
55 :はんだ層
60 :絶縁保護膜
62 :層間絶縁膜
62a:コンタクトホール
80 :開口
Claims (5)
- 半導体基板とゲート絶縁膜とゲート電極と層間絶縁膜と第1金属層と第2金属層と絶縁保護膜を備えているスイッチング素子であり、
前記半導体基板が、第1素子範囲と、前記第1素子範囲と前記半導体基板の外周端面の間に配置されている無効範囲を有しており、
前記半導体基板の上面に、前記第1素子範囲と前記無効範囲に跨って伸びており、第1方向に沿って互いに平行に伸びる複数の第1トレンチが設けられており、
前記上面を平面視したときに前記第1トレンチによって挟まれている各領域をトレンチ間領域とし、
前記第1素子範囲内では、各トレンチ間領域内の前記上面に、前記第1方向に間隔を開けて複数の第2トレンチが設けられており、
前記各第2トレンチが、その両側の2つの前記第1トレンチに接続されており、
前記無効範囲内では、各トレンチ間領域内の前記上面に、前記第2トレンチが設けられておらず、
前記無効範囲の前記第1方向における幅が、前記第2トレンチの前記第1方向におけるピッチよりも広く、
前記ゲート絶縁膜が、前記第1トレンチの内面と前記第2トレンチの内面を覆っており、
前記ゲート電極が、前記第1トレンチの内部と前記第2トレンチの内部に跨って配置されており、前記ゲート絶縁膜によって前記半導体基板から絶縁されており、
前記層間絶縁膜が、前記第1素子範囲から前記無効範囲に亘る範囲において前記上面と前記ゲート電極を覆っており、
前記第1素子範囲内では、前記上面を覆っている部分の前記層間絶縁膜にコンタクトホールが設けられており、
前記無効範囲内では、前記上面を覆っている部分の前記層間絶縁膜にコンタクトホールが設けられておらず、
前記第1金属層が、前記層間絶縁膜を覆っており、前記層間絶縁膜によって前記ゲート電極から絶縁されており、前記コンタクトホール内で前記半導体基板に接しており、
前記第1金属層の表面には、前記コンタクトホールの上部に凹部が設けられており、
前記絶縁保護膜が、前記無効範囲内の前記第1金属層の外周側の部分を覆っており、
前記絶縁保護膜には、前記第1素子範囲を含む前記第1素子範囲よりも広い範囲に開口が設けられており、前記開口の側面が前記無効範囲内に配置されており、
前記第2金属層が、前記開口内において前記第1金属層の前記表面に接しているとともに前記開口の前記側面に接しており、前記第1金属層よりも小さい線膨張係数を有しており、
前記第1素子範囲内の前記各トレンチ間領域が、
前記第1金属層と前記ゲート絶縁膜に接している第1導電型の第1領域と、
前記第1金属層に接しており、前記第1領域の下側で前記ゲート絶縁膜に接している第2導電型のボディ領域、
を備えており、
前記無効範囲内の前記各トレンチ間領域が、前記ボディ領域に接続されている第2導電型の周辺第2導電型領域を備えており、
前記半導体基板が、前記ボディ領域の下部と前記周辺第2導電型領域の下部に跨って配置されており、前記ボディ領域の下側で前記ゲート絶縁膜に接しており、前記ボディ領域によって前記第1領域から分離されている第1導電型の第2領域を備えている、
スイッチング素子。 - 前記周辺第2導電型領域の下端が、前記無効範囲内の前記第1トレンチの下端よりも下側に位置する請求項1のスイッチング素子。
- 前記周辺第2導電型領域の第2導電型不純物濃度が、前記ボディ領域の前記第1領域の下側に位置する部分の第2導電型不純物濃度よりも高い請求項2のスイッチング素子。
- 前記半導体基板が、前記無効範囲と前記半導体基板の前記外周端面の間に配置されている外周耐圧範囲を有しており、
前記外周耐圧範囲内に、前記上面に露出しており、前記第1素子範囲と前記無効範囲を囲んでおり、前記第1金属層から電気的に分離されている第2導電型のガードリングが設けられている請求項1〜3のいずれか一項のスイッチング素子。 - 前記半導体基板が、前記無効範囲と前記外周耐圧範囲の間に配置されている第2素子範囲を有しており、
前記第1トレンチが、前記第1素子範囲と前記無効範囲と前記第2素子範囲に跨って伸びており、
前記第2素子範囲内では、各トレンチ間領域内の前記上面に、複数の前記第2トレンチが設けられており、
前記第2素子範囲内では、前記上面を覆っている部分の前記層間絶縁膜にコンタクトホールが設けられており、
前記第1金属層が、前記第2素子範囲内の前記コンタクトホール内で前記上面に接しており、
前記絶縁保護膜が、前記第2素子範囲内の前記第1金属層を覆っており、
前記第2金属層が、前記開口内の前記第1金属層上から前記絶縁保護膜上に跨って配置されており、
前記第2金属層の外周側端部が、前記第1金属層の外周側端部よりも内周側に位置しており、
前記第2素子範囲内の前記各トレンチ間領域が、前記第1領域と、前記ボディ領域を有している、
請求項4のスイッチング素子。
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