JP2016530719A - 半導体構造および半導体構造の製造方法 - Google Patents
半導体構造および半導体構造の製造方法 Download PDFInfo
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- JP2016530719A JP2016530719A JP2016533315A JP2016533315A JP2016530719A JP 2016530719 A JP2016530719 A JP 2016530719A JP 2016533315 A JP2016533315 A JP 2016533315A JP 2016533315 A JP2016533315 A JP 2016533315A JP 2016530719 A JP2016530719 A JP 2016530719A
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- oxide
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- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
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Abstract
Description
本出願は、8月12日に出願された米国特許出願整理番号13/964,282“SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATION OF SAME”の出願日の利益を享受する権利を主張する。
Claims (20)
- 半導体構造を製造する方法であって、
誘電体材料と制御ゲート材料との交互の積層を形成することであって、前記積層の前記誘電体材料の各々は、同一のエッチング化学に晒されると、異なる除去速度を有するように形成された材料の少なくとも二つの部分を含む、ことと、
誘電体材料と制御ゲート材料との交互の前記積層を通る開口を形成することと、
前記制御ゲート材料に隣接する制御ゲート凹部を形成するために、前記制御ゲート材料の一部を除去することと、
前記制御ゲート凹部の高さを増加させるために、前記制御ゲート凹部に隣接する前記誘電体材料の一部を除去することと、
前記制御ゲート材料の露出表面に隣接する電荷ブロック材料を形成することと、
電荷蓄積構造を形成するために、電荷蓄積材料で前記制御ゲート凹部を充填することと、
を含む、
ことを特徴とする方法。 - 電荷蓄積構造を形成するために、電荷蓄積材料で前記制御ゲート凹部を充填することは、
前記電荷蓄積構造を形成することであって、前記電荷蓄積構造の各々は、前記隣接する制御ゲート材料と実質的に同一の高さを含む、ことを含む、
ことを特徴とする請求項1に記載の方法。 - 誘電体材料と制御ゲート材料との交互の積層を形成することは、
酸化物材料と制御ゲート材料との交互の積層を形成することであって、前記積層の前記酸化物材料の各々は、異なる密度の少なくとも二つの酸化物部分を含む、
ことを特徴とする請求項1に記載の方法。 - 酸化物材料と制御ゲート材料との積層を形成することは、
約25ワットから約200ワットのRF電力で化学蒸着プロセスによって、異なる密度の少なくとも二つの酸化物部分を含む前記酸化物材料を形成することを含む、
ことを特徴とする請求項3に記載の方法。 - 酸化物材料と制御ゲート材料との交互の積層を形成することは、
一つの反応室内でin−situ化学蒸着プロセスによって、異なる密度の少なくとも二つの酸化物部分を各々含む前記酸化物材料を形成することを含む、
ことを特徴とする請求項3に記載の方法。 - 誘電体材料と制御ゲート材料との交互の積層を形成することは、
誘電体材料と制御ゲート材料との交互の積層を形成することであって、前記積層の前記誘電体材料の各々は、少なくとも第一の材料部分と第二の材料部分とを含み、前記第一の材料部分は、同一のエッチング化学に晒されると、前記第二の材料部分のエッチング速度よりも少なくとも約2倍速いエッチング速度を有するように形成される、ことを含む、
ことを特徴とする請求項1に記載の方法。 - 誘電体材料と制御ゲート材料との交互の積層を形成することは、
誘電体材料と制御ゲート材料との交互の積層を形成することであって、前記積層の前記誘電体材料の各々は、上部材料部分、中間材料部分および下部材料部分を含み、前記上部材料部分は、同一のエッチング化学に晒されると、前記下部材料部分と実質的に同一の除去速度を有し、前記中間材料部分よりも速い除去速度を有する、ことを含む、
ことを特徴とする請求項1に記載の方法。 - 誘電体材料と制御ゲート材料との交互の積層を形成することであって、前記積層の前記誘電体材料の各々は、上部材料部分、中間材料部分および下部材料部分を含む、ことは、
酸化シリコン材料を含む前記上部材料部分および下部材料部分と、窒化シリコン材料を含む前記中間材料部分とを形成することを含む、
ことを特徴とする請求項7に記載の方法。 - 誘電体材料と制御ゲート材料との交互の積層を形成することであって、前記積層の前記誘電体材料の各々は、上部材料部分、中間材料部分および下部材料部分を含む、ことは、
酸化シリコン材料を含む前記上部材料部分および下部材料部分と、酸窒化シリコン材料を含む前記中間材料部分とを形成することを含む、
ことを特徴とする請求項7に記載の方法。 - 前記電荷蓄積構造の露出表面上にトンネル誘電体材料を形成することをさらに含む、
ことを特徴とする請求項1に記載の方法。 - 前記開口をチャネル材料で充填することをさらに含む、
ことを特徴とする請求項1に記載の方法。 - 誘電体材料と制御ゲートとの交互の積層であって、前記積層の前記誘電体材料の各々は、異なる密度の少なくとも二つの部分を含む、交互の積層と、
前記制御ゲート横方向に隣接する電荷蓄積構造と、
前記電荷蓄積構造の各々と、前記隣接する制御ゲートとの間の電荷ブロック材料と、
誘電体材料と制御ゲートとの交互の前記積層を通って延びるチャネル材料と、
を含む、
ことを特徴とする半導体構造。 - 前記電荷蓄積構造の各々は、前記隣接する制御ゲートと実質的に同一の高さを有する、
ことを特徴とする請求項12に記載の半導体構造。 - 前記少なくとも二つの誘電体部分内の一誘電体の密度は、前記少なくとも二つの誘電体部分の隣接する誘電体部分の密度よりも約6倍低い密度から約2倍高い密度の間である、
ことを特徴とする請求項12に記載の半導体構造。 - 前記誘電体材料は上部誘電体部分、中間誘電体部分および下部誘電体部分を含み、前記上部誘電体部分の密度は、前記下部誘電体部分の密度と実質的に等しく、前記中間誘電体部分の密度よりも低い、
ことを特徴とする請求項12に記載の半導体構造。 - 前記誘電体材料は上部誘電体部分、中間誘電体部分および下部誘電体部分を含み、前記中間誘電体部分の密度は、前記上部誘電体部分の密度および前記下部誘電体部分の密度よりも高い、
ことを特徴とする請求項12に記載の半導体構造。 - 前記誘電体材料は酸化物材料を含む、
ことを特徴とする請求項12に記載の半導体構造。 - 前記電荷ブロック材料は、酸化物−窒化物−酸化物(ONO)材料を含む、
ことを特徴とする請求項12に記載の半導体構造。 - 前記チャネル材料と前記電荷蓄積構造との間にトンネル誘電体材料をさらに含む、
ことを特徴とする請求項12に記載の半導体構造。 - 前記構造は三次元NANDフラッシュメモリデバイスを含む、
ことを特徴とする請求項12に記載の半導体構造。
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US20210335815A1 (en) | 2021-10-28 |
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