JP2016518702A - ビアとコンデンサのプレートとの間に誘電体を有するコンデンサ - Google Patents

ビアとコンデンサのプレートとの間に誘電体を有するコンデンサ Download PDF

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Publication number
JP2016518702A
JP2016518702A JP2016501422A JP2016501422A JP2016518702A JP 2016518702 A JP2016518702 A JP 2016518702A JP 2016501422 A JP2016501422 A JP 2016501422A JP 2016501422 A JP2016501422 A JP 2016501422A JP 2016518702 A JP2016518702 A JP 2016518702A
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capacitor
substrate
plate
dielectric
partially
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JP2016501422A
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Japanese (ja)
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JP2016518702A5 (enExample
Inventor
ジェ−シュン・ラン
チェンジエ・ズオ
チャンハン・ユン
デイヴィッド・エフ・ベルディ
デイク・ディー・キム
ロバート・ピー・ミクルカ
マリオ・フランシスコ・ヴェレス
ジョンヘ・キム
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クアルコム，インコーポレイテッド
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Publication of JP2016518702A publication Critical patent/JP2016518702A/ja
Publication of JP2016518702A5 publication Critical patent/JP2016518702A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Semiconductor Memories (AREA)
JP2016501422A 2013-03-15 2014-03-12 ビアとコンデンサのプレートとの間に誘電体を有するコンデンサ Pending JP2016518702A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/833,632 2013-03-15
US13/833,632 US9935166B2 (en) 2013-03-15 2013-03-15 Capacitor with a dielectric between a via and a plate of the capacitor
PCT/US2014/024118 WO2014150747A1 (en) 2013-03-15 2014-03-12 Capacitor with a dielectric between a via and a plate of the capacitor

Publications (2)

Publication Number Publication Date
JP2016518702A true JP2016518702A (ja) 2016-06-23
JP2016518702A5 JP2016518702A5 (enExample) 2017-03-30

Family

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Family Applications (1)

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JP2016501422A Pending JP2016518702A (ja) 2013-03-15 2014-03-12 ビアとコンデンサのプレートとの間に誘電体を有するコンデンサ

Country Status (6)

Country Link
US (1) US9935166B2 (enExample)
EP (1) EP2973693B1 (enExample)
JP (1) JP2016518702A (enExample)
KR (1) KR20150130516A (enExample)
CN (1) CN105009280B (enExample)
WO (1) WO2014150747A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018074134A (ja) * 2016-10-24 2018-05-10 大日本印刷株式会社 高周波部品及びその製造方法
JP2019033169A (ja) * 2017-08-08 2019-02-28 大日本印刷株式会社 貫通電極基板
JP2023535903A (ja) * 2020-07-20 2023-08-22 タレス・アレーニア・スペース・イタリア・エッセ・ピ・ア・コン・ウニコ・ソシオ 宇宙用途のためのハイブリッド密閉モジュールのための容量性フィードスルー

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US9634640B2 (en) 2013-05-06 2017-04-25 Qualcomm Incorporated Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) and related components and methods
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US10480774B2 (en) 2013-05-16 2019-11-19 Mckeon Products, Inc. Light emitter with communication or power connector
US9264013B2 (en) 2013-06-04 2016-02-16 Qualcomm Incorporated Systems for reducing magnetic coupling in integrated circuits (ICS), and related components and methods
JP6657609B2 (ja) * 2015-06-12 2020-03-04 凸版印刷株式会社 配線回路基板、半導体装置、配線回路基板の製造方法および半導体装置の製造方法
US9954267B2 (en) 2015-12-28 2018-04-24 Qualcomm Incorporated Multiplexer design using a 2D passive on glass filter integrated with a 3D through glass via filter
US10373868B2 (en) * 2016-01-18 2019-08-06 Infineon Technologies Austria Ag Method of processing a porous conductive structure in connection to an electronic component on a substrate
WO2019059898A1 (en) * 2017-09-20 2019-03-28 Intel Corporation PERIPHERAL INDUCERS
JP2019102733A (ja) * 2017-12-06 2019-06-24 凸版印刷株式会社 配線基板、半導体装置、及び配線基板の製造方法
TWI669997B (zh) * 2018-01-25 2019-08-21 欣興電子股份有限公司 線路板結構及其製作方法
KR102609518B1 (ko) 2018-09-21 2023-12-05 삼성전자주식회사 반도체 소자 형성 방법
WO2022222131A1 (zh) * 2021-04-23 2022-10-27 京东方科技集团股份有限公司 集成有无源器件的基板及其制备方法
US20220375865A1 (en) * 2021-05-18 2022-11-24 Intel Corporation Microelectronic assemblies with glass substrates and magnetic core inductors
US20220407212A1 (en) * 2021-06-17 2022-12-22 Intel Corporation Millimeter wave components in a glass core of a substrate
CN114400286B (zh) * 2022-01-14 2023-04-07 成都海威华芯科技有限公司 一种高可靠性通孔电容和制作方法

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Cited By (11)

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Publication number Priority date Publication date Assignee Title
JP2018074134A (ja) * 2016-10-24 2018-05-10 大日本印刷株式会社 高周波部品及びその製造方法
JP2021101483A (ja) * 2016-10-24 2021-07-08 大日本印刷株式会社 高周波部品及びその製造方法
JP7211445B2 (ja) 2016-10-24 2023-01-24 大日本印刷株式会社 高周波部品及びその製造方法
JP2023040216A (ja) * 2016-10-24 2023-03-22 大日本印刷株式会社 高周波部品及びその製造方法
JP7586202B2 (ja) 2016-10-24 2024-11-19 大日本印刷株式会社 高周波部品及びその製造方法
JP2019033169A (ja) * 2017-08-08 2019-02-28 大日本印刷株式会社 貫通電極基板
JP2021122066A (ja) * 2017-08-08 2021-08-26 大日本印刷株式会社 貫通電極基板
JP7176594B2 (ja) 2017-08-08 2022-11-22 大日本印刷株式会社 貫通電極基板
JP2023010784A (ja) * 2017-08-08 2023-01-20 大日本印刷株式会社 貫通電極基板
JP7552671B2 (ja) 2017-08-08 2024-09-18 大日本印刷株式会社 貫通電極基板
JP2023535903A (ja) * 2020-07-20 2023-08-22 タレス・アレーニア・スペース・イタリア・エッセ・ピ・ア・コン・ウニコ・ソシオ 宇宙用途のためのハイブリッド密閉モジュールのための容量性フィードスルー

Also Published As

Publication number Publication date
EP2973693B1 (en) 2020-08-26
CN105009280A (zh) 2015-10-28
KR20150130516A (ko) 2015-11-23
US9935166B2 (en) 2018-04-03
CN105009280B (zh) 2017-12-15
WO2014150747A1 (en) 2014-09-25
US20140268616A1 (en) 2014-09-18
EP2973693A1 (en) 2016-01-20

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