CN105009280B - 在通孔与电容器的极板之间具有电介质的电容器 - Google Patents

在通孔与电容器的极板之间具有电介质的电容器 Download PDF

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Publication number
CN105009280B
CN105009280B CN201480012684.5A CN201480012684A CN105009280B CN 105009280 B CN105009280 B CN 105009280B CN 201480012684 A CN201480012684 A CN 201480012684A CN 105009280 B CN105009280 B CN 105009280B
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China
Prior art keywords
hole
capacitor
substrate
dielectric
pole plate
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Expired - Fee Related
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CN201480012684.5A
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English (en)
Chinese (zh)
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CN105009280A (zh
Inventor
J-H·兰
C·左
C·尹
D·F·伯蒂
D·D·金
R·P·米库尔卡
M·F·维纶茨
J·金
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Semiconductor Memories (AREA)
CN201480012684.5A 2013-03-15 2014-03-12 在通孔与电容器的极板之间具有电介质的电容器 Expired - Fee Related CN105009280B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/833,632 2013-03-15
US13/833,632 US9935166B2 (en) 2013-03-15 2013-03-15 Capacitor with a dielectric between a via and a plate of the capacitor
PCT/US2014/024118 WO2014150747A1 (en) 2013-03-15 2014-03-12 Capacitor with a dielectric between a via and a plate of the capacitor

Publications (2)

Publication Number Publication Date
CN105009280A CN105009280A (zh) 2015-10-28
CN105009280B true CN105009280B (zh) 2017-12-15

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CN201480012684.5A Expired - Fee Related CN105009280B (zh) 2013-03-15 2014-03-12 在通孔与电容器的极板之间具有电介质的电容器

Country Status (6)

Country Link
US (1) US9935166B2 (enExample)
EP (1) EP2973693B1 (enExample)
JP (1) JP2016518702A (enExample)
KR (1) KR20150130516A (enExample)
CN (1) CN105009280B (enExample)
WO (1) WO2014150747A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9203373B2 (en) 2013-01-11 2015-12-01 Qualcomm Incorporated Diplexer design using through glass via technology
US9634640B2 (en) 2013-05-06 2017-04-25 Qualcomm Incorporated Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) and related components and methods
US9267653B2 (en) 2013-05-16 2016-02-23 Mckeon Products, Inc. Light fixture with communication or power connector
US10480774B2 (en) 2013-05-16 2019-11-19 Mckeon Products, Inc. Light emitter with communication or power connector
US9264013B2 (en) 2013-06-04 2016-02-16 Qualcomm Incorporated Systems for reducing magnetic coupling in integrated circuits (ICS), and related components and methods
JP6657609B2 (ja) * 2015-06-12 2020-03-04 凸版印刷株式会社 配線回路基板、半導体装置、配線回路基板の製造方法および半導体装置の製造方法
US9954267B2 (en) 2015-12-28 2018-04-24 Qualcomm Incorporated Multiplexer design using a 2D passive on glass filter integrated with a 3D through glass via filter
US10373868B2 (en) * 2016-01-18 2019-08-06 Infineon Technologies Austria Ag Method of processing a porous conductive structure in connection to an electronic component on a substrate
JP6857329B2 (ja) * 2016-10-24 2021-04-14 大日本印刷株式会社 高周波部品及びその製造方法
JP6889399B2 (ja) * 2017-08-08 2021-06-18 大日本印刷株式会社 貫通電極基板
WO2019059898A1 (en) * 2017-09-20 2019-03-28 Intel Corporation PERIPHERAL INDUCERS
JP2019102733A (ja) * 2017-12-06 2019-06-24 凸版印刷株式会社 配線基板、半導体装置、及び配線基板の製造方法
TWI669997B (zh) * 2018-01-25 2019-08-21 欣興電子股份有限公司 線路板結構及其製作方法
KR102609518B1 (ko) 2018-09-21 2023-12-05 삼성전자주식회사 반도체 소자 형성 방법
IT202000017554A1 (it) * 2020-07-20 2022-01-20 Thales Alenia Space Italia Spa Con Unico Socio Feedthrough capacitivo per moduli ermetici ibridi
WO2022222131A1 (zh) * 2021-04-23 2022-10-27 京东方科技集团股份有限公司 集成有无源器件的基板及其制备方法
US20220375865A1 (en) * 2021-05-18 2022-11-24 Intel Corporation Microelectronic assemblies with glass substrates and magnetic core inductors
US20220407212A1 (en) * 2021-06-17 2022-12-22 Intel Corporation Millimeter wave components in a glass core of a substrate
CN114400286B (zh) * 2022-01-14 2023-04-07 成都海威华芯科技有限公司 一种高可靠性通孔电容和制作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5404118A (en) * 1992-07-27 1995-04-04 Murata Manufacturing Co., Ltd. Band pass filter with resonator having spiral electrodes formed of coil electrodes on plurality of dielectric layers

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2757320A (en) 1953-10-15 1956-07-31 Westinghouse Electric Corp Frequency sensitive control device
US3656162A (en) 1969-09-19 1972-04-11 Litton Systems Inc Diplexer for radio communication
JPS5291446U (enExample) 1975-12-29 1977-07-08
JP3139327B2 (ja) 1995-05-31 2001-02-26 株式会社村田製作所 高周波複合部品
US5548255A (en) 1995-06-23 1996-08-20 Microphase Corporation Compact diplexer connection circuit
JPH0992539A (ja) 1995-09-22 1997-04-04 Uniden Corp 立体渦巻状インダクタ及びそれを用いた誘導結合フィルタ
JP3106942B2 (ja) 1995-12-28 2000-11-06 株式会社村田製作所 Ｌｃ共振部品
US6366564B1 (en) 1996-09-26 2002-04-02 Matsushita Electric Industrial Co., Ltd. Diplexer duplexer and two-channel mobile communications equipment
US5886597A (en) 1997-03-28 1999-03-23 Virginia Tech Intellectual Properties, Inc. Circuit structure including RF/wideband resonant vias
US6013939A (en) 1997-10-31 2000-01-11 National Scientific Corp. Monolithic inductor with magnetic flux lines guided away from substrate
US6180976B1 (en) 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same
JP3669219B2 (ja) * 1999-08-10 2005-07-06 日本電気株式会社 多層プリント配線板
KR100316693B1 (ko) 1999-12-22 2001-12-20 박종섭 이동통신 기지국의 ｒｆ블록
JP2002008942A (ja) 2000-06-16 2002-01-11 Fujitsu Ltd コンデンサ装置、コンデンサ装置の製造方法及びコンデンサ装置が実装されたモジュール
KR100860281B1 (ko) 2000-08-04 2008-09-25 미츠비시 마테리알 가부시키가이샤 안테나
CN1630946A (zh) * 2001-07-12 2005-06-22 株式会社日立制作所 电子电路部件
JP3910387B2 (ja) * 2001-08-24 2007-04-25 新光電気工業株式会社 半導体パッケージ及びその製造方法並びに半導体装置
US6597258B2 (en) 2001-08-30 2003-07-22 Spectrum Astro High performance diplexer and method
JP2003100553A (ja) 2001-09-26 2003-04-04 Toshiba Corp 受動素子部品及び受動素子内蔵基板
JP3988453B2 (ja) * 2001-12-07 2007-10-10 株式会社村田製作所 多層電子部品
JP3998984B2 (ja) 2002-01-18 2007-10-31 富士通株式会社 回路基板及びその製造方法
JP4103502B2 (ja) 2002-08-28 2008-06-18 株式会社トッパンＮｅｃサーキットソリューションズ 多層配線板及びその製造方法
KR100691725B1 (ko) 2002-12-11 2007-03-12 다이니폰 인사츠 가부시키가이샤 다층 배선기판 및 그 제조 방법
JP2004200227A (ja) 2002-12-16 2004-07-15 Alps Electric Co Ltd プリントインダクタ
WO2006070807A1 (ja) 2004-12-28 2006-07-06 Ngk Spark Plug Co., Ltd. 配線基板及び配線基板の製造方法
US7323948B2 (en) 2005-08-23 2008-01-29 International Business Machines Corporation Vertical LC tank device
WO2007061308A1 (en) 2005-11-24 2007-05-31 Technische Universiteit Delft Varactor element and low distortion varactor circuit arrangement
JP5055768B2 (ja) 2006-01-16 2012-10-24 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US7498918B2 (en) 2006-04-04 2009-03-03 United Microelectronics Corp. Inductor structure
EP1850491A3 (en) 2006-04-26 2012-02-22 Hitachi Metals, Ltd. High-frequency circuit, high-frequency device and communications apparatus
US7843302B2 (en) 2006-05-08 2010-11-30 Ibiden Co., Ltd. Inductor and electric power supply using it
US7825745B1 (en) 2006-09-12 2010-11-02 Rf Magic Inc. Variable bandwidth tunable silicon duplexer
TWI333684B (en) 2006-11-07 2010-11-21 Unimicron Technology Corp Package substrate having embedded capacitor
DE102006058068B4 (de) 2006-12-07 2018-04-05 Infineon Technologies Ag Halbleiterbauelement mit Halbleiterchip und passivem Spulen-Bauelement sowie Verfahren zu dessen Herstellung
JP2008171965A (ja) 2007-01-11 2008-07-24 Fuji Electric Device Technology Co Ltd 超小型電力変換装置
JP2008182340A (ja) 2007-01-23 2008-08-07 Ngk Spark Plug Co Ltd ダイプレクサ及びそれを用いたマルチプレクサ
US7821359B2 (en) 2007-07-09 2010-10-26 John Messalingua Associates, Inc. Band-stop filters
US7724117B2 (en) * 2008-01-11 2010-05-25 Northrop Grumman Systems Corporation Multilayer passive circuit topology
US20090219908A1 (en) 2008-02-29 2009-09-03 Ahmadreza Rofougaran Method and system for processing signals via diplexers embedded in an integrated circuit package
WO2009110288A1 (ja) * 2008-03-04 2009-09-11 日本電気株式会社 貫通電極付きキャパシタおよびその製造方法、並びに半導体装置
WO2009118694A1 (en) 2008-03-25 2009-10-01 Nxp B.V. Integrated 3d high density and high quality inductive element
WO2009128047A1 (en) 2008-04-18 2009-10-22 Nxp B.V. High density inductor, having a high quality factor
KR100990576B1 (ko) * 2008-05-26 2010-10-29 삼성전기주식회사 미세 최외층 회로패턴을 갖는 인쇄회로기판 및 그 제조방법
US7955942B2 (en) 2009-05-18 2011-06-07 Stats Chippac, Ltd. Semiconductor device and method of forming a 3D inductor from prefabricated pillar frame
US7989919B2 (en) * 2009-06-03 2011-08-02 Infineon Technologies Ag Capacitor arrangement and method for making same
US8344478B2 (en) 2009-10-23 2013-01-01 Maxim Integrated Products, Inc. Inductors having inductor axis parallel to substrate surface
US8391316B2 (en) 2009-11-06 2013-03-05 Broadcom Corporation Front-end system for processing composite wideband signals and method for utilizing same
KR101444708B1 (ko) * 2009-12-15 2014-09-26 한국전자통신연구원 인덕터
US20110248405A1 (en) 2010-04-09 2011-10-13 Qualcomm Incorporated Selective Patterning for Low Cost through Vias
US8384507B2 (en) * 2010-06-01 2013-02-26 Qualcomm Incorporated Through via inductor or transformer in a high-resistance substrate with programmability
US8362591B2 (en) 2010-06-08 2013-01-29 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuits and methods of forming the same
WO2012040063A1 (en) * 2010-09-23 2012-03-29 Qualcomm Mems Technologies, Inc. Integrated passives and power amplifier
US8405135B2 (en) 2010-10-05 2013-03-26 International Business Machines Corporation 3D via capacitor with a floating conductive plate for improved reliability
CN102569249B (zh) 2010-12-08 2014-01-22 财团法人工业技术研究院 立体式电感
US8736399B2 (en) 2011-04-06 2014-05-27 M/A-Com Technology Solutions Holdings, Inc. Triplexer topology
JP5780298B2 (ja) 2011-04-18 2015-09-16 株式会社村田製作所 アンテナ装置および通信端末装置
US9002309B2 (en) 2011-05-27 2015-04-07 Qualcomm Incorporated Tunable multi-band receiver
US8836078B2 (en) 2011-08-18 2014-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. Vertically oriented inductor within interconnect structures and capacitor structure thereof
US8803615B2 (en) 2012-01-23 2014-08-12 Qualcomm Incorporated Impedance matching circuit with tunable notch filters for power amplifier
US20130207745A1 (en) 2012-02-13 2013-08-15 Qualcomm Incorporated 3d rf l-c filters using through glass vias
US20130223412A1 (en) 2012-02-24 2013-08-29 Qualcomm Incorporated Method and system to improve frame early termination success rate
US9203373B2 (en) 2013-01-11 2015-12-01 Qualcomm Incorporated Diplexer design using through glass via technology
US9213059B2 (en) * 2013-03-04 2015-12-15 Honeywell International Inc. Using test elements of an integrated circuit for integrated circuit testing
US9634640B2 (en) 2013-05-06 2017-04-25 Qualcomm Incorporated Tunable diplexers in three-dimensional (3D) integrated circuits (IC) (3DIC) and related components and methods
US9264013B2 (en) 2013-06-04 2016-02-16 Qualcomm Incorporated Systems for reducing magnetic coupling in integrated circuits (ICS), and related components and methods

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5404118A (en) * 1992-07-27 1995-04-04 Murata Manufacturing Co., Ltd. Band pass filter with resonator having spiral electrodes formed of coil electrodes on plurality of dielectric layers

Also Published As

Publication number Publication date
EP2973693B1 (en) 2020-08-26
CN105009280A (zh) 2015-10-28
KR20150130516A (ko) 2015-11-23
US9935166B2 (en) 2018-04-03
JP2016518702A (ja) 2016-06-23
WO2014150747A1 (en) 2014-09-25
US20140268616A1 (en) 2014-09-18
EP2973693A1 (en) 2016-01-20

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