JP2016514372A5 - - Google Patents
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- Publication number
- JP2016514372A5 JP2016514372A5 JP2016500719A JP2016500719A JP2016514372A5 JP 2016514372 A5 JP2016514372 A5 JP 2016514372A5 JP 2016500719 A JP2016500719 A JP 2016500719A JP 2016500719 A JP2016500719 A JP 2016500719A JP 2016514372 A5 JP2016514372 A5 JP 2016514372A5
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- layer
- dielectric layer
- thickness
- etchant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 7
- 239000011800 void material Substances 0.000 claims 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims 5
- 230000008021 deposition Effects 0.000 claims 4
- 229910052736 halogen Inorganic materials 0.000 claims 3
- 150000002367 halogens Chemical class 0.000 claims 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 238000007689 inspection Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361778223P | 2013-03-12 | 2013-03-12 | |
| US61/778,223 | 2013-03-12 | ||
| PCT/US2014/021086 WO2014158955A1 (en) | 2013-03-12 | 2014-03-06 | Pinhole evaluation method of dielectric films for metal oxide semiconductor tft |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016514372A JP2016514372A (ja) | 2016-05-19 |
| JP2016514372A5 true JP2016514372A5 (enExample) | 2016-09-23 |
Family
ID=51528892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016500719A Pending JP2016514372A (ja) | 2013-03-12 | 2014-03-06 | 金属酸化物半導体ｔｆｔ用誘電体膜のピンホール評価方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9245809B2 (enExample) |
| JP (1) | JP2016514372A (enExample) |
| KR (1) | KR101757400B1 (enExample) |
| CN (1) | CN105009297B (enExample) |
| TW (1) | TWI567997B (enExample) |
| WO (1) | WO2014158955A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7052367B2 (ja) * | 2018-01-18 | 2022-04-12 | 株式会社デンソー | 半導体装置の製造方法 |
| CN111599707A (zh) * | 2020-05-27 | 2020-08-28 | 广州粤芯半导体技术有限公司 | 钝化层微裂纹的检测方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6057225B2 (ja) * | 1980-04-26 | 1985-12-13 | 三菱電機株式会社 | 半導体装置の試験方法 |
| JPS60140729A (ja) * | 1983-12-28 | 1985-07-25 | Oki Electric Ind Co Ltd | 半導体素子膜の欠陥検査方法 |
| JPH0810195B2 (ja) * | 1986-11-04 | 1996-01-31 | 松下電子工業株式会社 | ピンホールの検査方法 |
| JP2807679B2 (ja) * | 1988-07-08 | 1998-10-08 | 住友シチックス株式会社 | シリコン基板の絶縁膜欠陥検出方法 |
| JPH05226367A (ja) * | 1992-02-14 | 1993-09-03 | Fuji Xerox Co Ltd | 半導体素子の製造方法 |
| JPH0677484A (ja) * | 1992-08-27 | 1994-03-18 | Sharp Corp | 薄膜トランジスタ及びその製造方法 |
| EP0608628A3 (en) * | 1992-12-25 | 1995-01-18 | Kawasaki Steel Co | Method for manufacturing a semiconductor device with a multilayer connection structure. |
| JPH07283282A (ja) * | 1994-04-08 | 1995-10-27 | Sony Corp | 絶縁膜の欠陥検出方法 |
| JPH0831898A (ja) * | 1994-07-18 | 1996-02-02 | Hitachi Ltd | 半導体ウエハの酸化膜評価方法 |
| JPH1022283A (ja) * | 1996-07-05 | 1998-01-23 | Nippon Steel Corp | 半導体装置の製造方法 |
| JP3685678B2 (ja) * | 2000-03-21 | 2005-08-24 | 沖電気工業株式会社 | 半導体ウエハの評価方法 |
| US6440870B1 (en) * | 2000-07-12 | 2002-08-27 | Applied Materials, Inc. | Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures |
| JP2004221379A (ja) * | 2003-01-16 | 2004-08-05 | Matsushita Electric Ind Co Ltd | 絶縁膜の評価方法 |
| CN100418194C (zh) * | 2003-02-19 | 2008-09-10 | 信越半导体股份有限公司 | Soi晶片的制造方法及soi晶片 |
| US20050029226A1 (en) * | 2003-08-07 | 2005-02-10 | Advanced Power Technology, Inc. | Plasma etching using dibromomethane addition |
| US6949481B1 (en) | 2003-12-09 | 2005-09-27 | Fasl, Llc | Process for fabrication of spacer layer with reduced hydrogen content in semiconductor device |
| JP2005268507A (ja) * | 2004-03-18 | 2005-09-29 | Furukawa Electric Co Ltd:The | 電界効果トランジスタ及びその製造方法 |
| JP4785721B2 (ja) * | 2006-12-05 | 2011-10-05 | キヤノン株式会社 | エッチング方法、パターン形成方法、薄膜トランジスタの製造方法及びエッチング液 |
| JP5330739B2 (ja) * | 2007-06-29 | 2013-10-30 | ユー・ディー・シー アイルランド リミテッド | 有機ｅｌ表示装置およびその製造方法 |
| US20090001360A1 (en) * | 2007-06-29 | 2009-01-01 | Masaya Nakayama | Organic el display and method for producing the same |
| KR101412761B1 (ko) | 2008-01-18 | 2014-07-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| US8258511B2 (en) | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
| CN102110625B (zh) * | 2009-12-24 | 2012-07-25 | 中芯国际集成电路制造(上海)有限公司 | 一种针孔类生长缺陷的检测方法 |
| WO2012024114A2 (en) | 2010-08-20 | 2012-02-23 | Applied Materials, Inc. | Methods for forming a hydrogen free silicon containing dielectric film |
| CN103270578B (zh) | 2010-12-30 | 2016-10-26 | 应用材料公司 | 使用微波等离子体的薄膜沉积 |
-
2014
- 2014-03-06 CN CN201480011873.0A patent/CN105009297B/zh not_active Expired - Fee Related
- 2014-03-06 JP JP2016500719A patent/JP2016514372A/ja active Pending
- 2014-03-06 KR KR1020157027121A patent/KR101757400B1/ko not_active Expired - Fee Related
- 2014-03-06 WO PCT/US2014/021086 patent/WO2014158955A1/en not_active Ceased
- 2014-03-06 US US14/199,318 patent/US9245809B2/en not_active Expired - Fee Related
- 2014-03-12 TW TW103107323A patent/TWI567997B/zh not_active IP Right Cessation
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