JP2013516063A5 - - Google Patents

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Publication number
JP2013516063A5
JP2013516063A5 JP2012545505A JP2012545505A JP2013516063A5 JP 2013516063 A5 JP2013516063 A5 JP 2013516063A5 JP 2012545505 A JP2012545505 A JP 2012545505A JP 2012545505 A JP2012545505 A JP 2012545505A JP 2013516063 A5 JP2013516063 A5 JP 2013516063A5
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JP
Japan
Prior art keywords
silicon
insulator structure
metal
silicon layer
temperature
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Pending
Application number
JP2012545505A
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English (en)
Japanese (ja)
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JP2013516063A (ja
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Publication date
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Priority claimed from PCT/IB2010/055925 external-priority patent/WO2011077344A2/en
Publication of JP2013516063A publication Critical patent/JP2013516063A/ja
Publication of JP2013516063A5 publication Critical patent/JP2013516063A5/ja
Pending legal-status Critical Current

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JP2012545505A 2009-12-23 2010-12-17 ウエハプロセシング中に半導体ウエハに与えられる汚染物混入の量をモニタリングするための方法 Pending JP2013516063A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US28987809P 2009-12-23 2009-12-23
US61/289,878 2009-12-23
PCT/IB2010/055925 WO2011077344A2 (en) 2009-12-23 2010-12-17 Method for monitoring the amount of contamination imparted into semiconductor wafers during wafer processing

Publications (2)

Publication Number Publication Date
JP2013516063A JP2013516063A (ja) 2013-05-09
JP2013516063A5 true JP2013516063A5 (enExample) 2013-07-25

Family

ID=43797704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012545505A Pending JP2013516063A (ja) 2009-12-23 2010-12-17 ウエハプロセシング中に半導体ウエハに与えられる汚染物混入の量をモニタリングするための方法

Country Status (8)

Country Link
US (4) US8143078B2 (enExample)
EP (1) EP2517234A2 (enExample)
JP (1) JP2013516063A (enExample)
KR (1) KR101762463B1 (enExample)
CN (1) CN102687260A (enExample)
SG (1) SG181427A1 (enExample)
TW (1) TWI528482B (enExample)
WO (1) WO2011077344A2 (enExample)

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US8835309B2 (en) * 2012-09-13 2014-09-16 International Business Machines Corporation Forming nickel—platinum alloy self-aligned silicide contacts
CN104078378A (zh) * 2014-07-02 2014-10-01 武汉新芯集成电路制造有限公司 一种检测金属污染的方法
JP5783312B1 (ja) * 2014-09-18 2015-09-24 株式会社Sumco エピタキシャルシリコンウェーハの製造方法及び気相成長装置
TWI559424B (zh) * 2015-03-05 2016-11-21 力晶科技股份有限公司 半導體晶圓的金屬汙染即時監控方法
CN104713588B (zh) * 2015-03-20 2017-03-29 上海华力微电子有限公司 一种监控电子显微镜真空腔体洁净度的方法
CN106206334B (zh) * 2015-05-07 2019-01-22 中芯国际集成电路制造(上海)有限公司 监测晶圆以及金属污染的监测方法
CN107301960A (zh) * 2016-04-15 2017-10-27 上海新昇半导体科技有限公司 晶圆金属污染的评估方法
JP6897764B2 (ja) * 2017-04-25 2021-07-07 株式会社Sumco シリコン単結晶の製造方法、および、エピタキシャルシリコンウェーハの製造方法
US10504805B2 (en) * 2017-08-24 2019-12-10 Applied Materials Israel Ltd. Method of examining defects in a semiconductor specimen and system thereof
GB2580858B (en) 2018-09-07 2021-07-21 Memsstar Ltd A method for detecting defects in thin film layers
US10714329B2 (en) * 2018-09-28 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-clean for contacts
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US11211272B2 (en) * 2019-09-25 2021-12-28 Micron Technology, Inc. Contaminant detection tools and related methods
WO2021159225A1 (en) 2020-02-10 2021-08-19 Yangtze Memory Technologies Co., Ltd. Metal contamination test apparatus and method
US12278124B2 (en) * 2021-10-28 2025-04-15 Applied Materials, Inc. Model-based controlled load lock pumping scheme
CN115793416B (zh) * 2023-01-16 2023-04-25 广州粤芯半导体技术有限公司 半导体器件制备方法及监测光刻工艺化学品杂质的方法
US12467877B2 (en) 2023-01-31 2025-11-11 Globalwafers Co., Ltd. Methods for detecting defects in a single crystal silicon structure
CN116387174B (zh) * 2023-03-27 2024-11-22 马鞍山芯乔科技有限公司 一种晶圆传递夹具污染自检测装置及其检测工艺

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