SG181427A1 - Method for monitoring the amount of contamination imparted into semiconductor wafers during wafer processing - Google Patents
Method for monitoring the amount of contamination imparted into semiconductor wafers during wafer processing Download PDFInfo
- Publication number
- SG181427A1 SG181427A1 SG2012036067A SG2012036067A SG181427A1 SG 181427 A1 SG181427 A1 SG 181427A1 SG 2012036067 A SG2012036067 A SG 2012036067A SG 2012036067 A SG2012036067 A SG 2012036067A SG 181427 A1 SG181427 A1 SG 181427A1
- Authority
- SG
- Singapore
- Prior art keywords
- set forth
- sec
- silicon
- less
- insulator structure
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 188
- 238000011109 contamination Methods 0.000 title claims abstract description 81
- 239000004065 semiconductor Substances 0.000 title claims abstract description 70
- 238000012544 monitoring process Methods 0.000 title claims abstract description 16
- 235000012431 wafers Nutrition 0.000 title claims description 143
- 229910052751 metal Inorganic materials 0.000 claims abstract description 162
- 239000002184 metal Substances 0.000 claims abstract description 162
- 239000000356 contaminant Substances 0.000 claims abstract description 61
- 239000012212 insulator Substances 0.000 claims abstract description 57
- 238000004140 cleaning Methods 0.000 claims abstract description 14
- 238000005498 polishing Methods 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 98
- 229910052710 silicon Inorganic materials 0.000 claims description 98
- 239000010703 silicon Substances 0.000 claims description 98
- 239000002244 precipitate Substances 0.000 claims description 53
- 238000001816 cooling Methods 0.000 claims description 25
- 230000007547 defect Effects 0.000 claims description 21
- 125000004429 atom Chemical group 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 7
- 101710134784 Agnoprotein Proteins 0.000 claims description 6
- 239000000395 magnesium oxide Substances 0.000 claims description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910005103 Si3Ny Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 230000002708 enhancing effect Effects 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000000678 plasma activation Methods 0.000 claims description 4
- 238000007669 thermal treatment Methods 0.000 claims description 4
- 238000003631 wet chemical etching Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 241000191291 Abies alba Species 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 4
- 150000002431 hydrogen Chemical class 0.000 claims 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 230000001376 precipitating effect Effects 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 11
- 150000002739 metals Chemical class 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 239000012530 fluid Substances 0.000 description 6
- 238000000149 argon plasma sintering Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- -1 1414°C) Chemical compound 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000029087 digestion Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Chemical group 0.000 description 1
- 229910052734 helium Chemical group 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28987809P | 2009-12-23 | 2009-12-23 | |
| PCT/IB2010/055925 WO2011077344A2 (en) | 2009-12-23 | 2010-12-17 | Method for monitoring the amount of contamination imparted into semiconductor wafers during wafer processing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG181427A1 true SG181427A1 (en) | 2012-07-30 |
Family
ID=43797704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2012036067A SG181427A1 (en) | 2009-12-23 | 2010-12-17 | Method for monitoring the amount of contamination imparted into semiconductor wafers during wafer processing |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US8143078B2 (enExample) |
| EP (1) | EP2517234A2 (enExample) |
| JP (1) | JP2013516063A (enExample) |
| KR (1) | KR101762463B1 (enExample) |
| CN (1) | CN102687260A (enExample) |
| SG (1) | SG181427A1 (enExample) |
| TW (1) | TWI528482B (enExample) |
| WO (1) | WO2011077344A2 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5407473B2 (ja) * | 2009-03-25 | 2014-02-05 | 株式会社Ｓｕｍｃｏ | シリコンウェーハの製造方法 |
| US9343379B2 (en) * | 2011-10-14 | 2016-05-17 | Sunedison Semiconductor Limited | Method to delineate crystal related defects |
| JP5949303B2 (ja) * | 2012-08-09 | 2016-07-06 | 株式会社Sumco | エピタキシャル成長炉の評価方法およびエピタキシャルウェーハの製造方法 |
| US8835309B2 (en) * | 2012-09-13 | 2014-09-16 | International Business Machines Corporation | Forming nickel—platinum alloy self-aligned silicide contacts |
| CN104078378A (zh) * | 2014-07-02 | 2014-10-01 | 武汉新芯集成电路制造有限公司 | 一种检测金属污染的方法 |
| JP5783312B1 (ja) * | 2014-09-18 | 2015-09-24 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法及び気相成長装置 |
| TWI559424B (zh) * | 2015-03-05 | 2016-11-21 | 力晶科技股份有限公司 | 半導體晶圓的金屬汙染即時監控方法 |
| CN104713588B (zh) * | 2015-03-20 | 2017-03-29 | 上海华力微电子有限公司 | 一种监控电子显微镜真空腔体洁净度的方法 |
| CN106206334B (zh) * | 2015-05-07 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | 监测晶圆以及金属污染的监测方法 |
| CN107301960A (zh) * | 2016-04-15 | 2017-10-27 | 上海新昇半导体科技有限公司 | 晶圆金属污染的评估方法 |
| JP6897764B2 (ja) * | 2017-04-25 | 2021-07-07 | 株式会社Sumco | シリコン単結晶の製造方法、および、エピタキシャルシリコンウェーハの製造方法 |
| US10504805B2 (en) * | 2017-08-24 | 2019-12-10 | Applied Materials Israel Ltd. | Method of examining defects in a semiconductor specimen and system thereof |
| GB2580858B (en) | 2018-09-07 | 2021-07-21 | Memsstar Ltd | A method for detecting defects in thin film layers |
| US10714329B2 (en) * | 2018-09-28 | 2020-07-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pre-clean for contacts |
| CN111106024B (zh) * | 2018-10-26 | 2023-09-29 | 长鑫存储技术有限公司 | 流场分布的检测方法 |
| US11211272B2 (en) * | 2019-09-25 | 2021-12-28 | Micron Technology, Inc. | Contaminant detection tools and related methods |
| WO2021159225A1 (en) | 2020-02-10 | 2021-08-19 | Yangtze Memory Technologies Co., Ltd. | Metal contamination test apparatus and method |
| US12278124B2 (en) * | 2021-10-28 | 2025-04-15 | Applied Materials, Inc. | Model-based controlled load lock pumping scheme |
| CN115793416B (zh) * | 2023-01-16 | 2023-04-25 | 广州粤芯半导体技术有限公司 | 半导体器件制备方法及监测光刻工艺化学品杂质的方法 |
| US12467877B2 (en) | 2023-01-31 | 2025-11-11 | Globalwafers Co., Ltd. | Methods for detecting defects in a single crystal silicon structure |
| CN116387174B (zh) * | 2023-03-27 | 2024-11-22 | 马鞍山芯乔科技有限公司 | 一种晶圆传递夹具污染自检测装置及其检测工艺 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2617798B2 (ja) | 1989-09-22 | 1997-06-04 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
| JPH07106512A (ja) | 1993-10-04 | 1995-04-21 | Sharp Corp | 分子イオン注入を用いたｓｉｍｏｘ処理方法 |
| JP3544280B2 (ja) | 1997-03-27 | 2004-07-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| EP0869352A1 (en) * | 1997-04-03 | 1998-10-07 | Applied Materials, Inc. | Method for detecting metallic contaminants in submicron silicon surface layers of a semiconductor wafer |
| US6033974A (en) | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
| JP3917245B2 (ja) | 1997-07-10 | 2007-05-23 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | シリコンウェーハ及び熱処理用ボート、チューブの評価方法 |
| JPH1174493A (ja) * | 1997-08-29 | 1999-03-16 | Sumitomo Metal Ind Ltd | Ｓｏｉウエーハの欠陥検査方法 |
| JP3704426B2 (ja) * | 1997-10-31 | 2005-10-12 | 信越半導体株式会社 | 金属不純物析出履歴の評価方法 |
| JP2000040723A (ja) | 1998-07-23 | 2000-02-08 | Shin Etsu Handotai Co Ltd | 金属不純物検査用ウエーハ及び該ウエーハを用いた金属不純物検査方法 |
| JP2000164476A (ja) * | 1998-11-26 | 2000-06-16 | Mitsubishi Electric Corp | 半導体製造工程の管理方法、半導体製造装置の管理方法、及び半導体製造環境の管理方法 |
| US6284384B1 (en) * | 1998-12-09 | 2001-09-04 | Memc Electronic Materials, Inc. | Epitaxial silicon wafer with intrinsic gettering |
| JP3899715B2 (ja) * | 1998-12-24 | 2007-03-28 | 株式会社Ｓｕｍｃｏ | シリコンウェーハ表面の検査方法 |
| JP2001050874A (ja) * | 1999-08-04 | 2001-02-23 | Mitsubishi Electric Corp | 半導体基板の検査方法 |
| JP2002110688A (ja) | 2000-09-29 | 2002-04-12 | Canon Inc | Ｓｏｉの熱処理方法及び製造方法 |
| US6528335B2 (en) * | 2001-02-14 | 2003-03-04 | International Business Machines Corporation | Electrical method for assessing yield-limiting asperities in silicon-on-insulator wafers |
| JP2003288112A (ja) * | 2002-03-28 | 2003-10-10 | Matsushita Electric Ind Co Ltd | 生産管理方法 |
| JP4252258B2 (ja) * | 2002-05-27 | 2009-04-08 | 株式会社Ｓｕｍｃｏ | Ｓｏｉ基板のｈｆ欠陥評価方法 |
| EP1369682A3 (en) | 2002-06-07 | 2004-12-01 | Interuniversitair Microelektronica Centrum Vzw | A method for wafer level detection of integrity of a layer |
| US7016028B2 (en) | 2002-06-07 | 2006-03-21 | Interuniversitair Microelektronica Centrum (Imec) | Method and apparatus for defect detection |
| US6825050B2 (en) * | 2002-06-07 | 2004-11-30 | Lam Research Corporation | Integrated stepwise statistical process control in a plasma processing system |
| US20040241867A1 (en) | 2003-01-17 | 2004-12-02 | Jones Mark L. | Method of analyzing a wafer for metal impurities |
| US7570353B2 (en) * | 2005-12-16 | 2009-08-04 | Infineon Technologies Ag | Fabrication and test methods and systems |
| US7517706B2 (en) | 2006-07-21 | 2009-04-14 | Sumco Corporation | Method for evaluating quality of semiconductor substrate and method for manufacturing semiconductor substrate |
-
2010
- 2010-12-16 US US12/970,139 patent/US8143078B2/en active Active
- 2010-12-17 CN CN2010800580774A patent/CN102687260A/zh active Pending
- 2010-12-17 EP EP10813030A patent/EP2517234A2/en not_active Withdrawn
- 2010-12-17 SG SG2012036067A patent/SG181427A1/en unknown
- 2010-12-17 KR KR1020127016382A patent/KR101762463B1/ko active Active
- 2010-12-17 WO PCT/IB2010/055925 patent/WO2011077344A2/en not_active Ceased
- 2010-12-17 JP JP2012545505A patent/JP2013516063A/ja active Pending
- 2010-12-22 TW TW099145375A patent/TWI528482B/zh active
-
2011
- 2011-05-11 US US13/105,392 patent/US20110212550A1/en not_active Abandoned
- 2011-05-11 US US13/105,381 patent/US20110212547A1/en not_active Abandoned
-
2012
- 2012-01-18 US US13/353,142 patent/US8822242B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011077344A2 (en) | 2011-06-30 |
| US20110151592A1 (en) | 2011-06-23 |
| CN102687260A (zh) | 2012-09-19 |
| US8143078B2 (en) | 2012-03-27 |
| KR101762463B1 (ko) | 2017-07-27 |
| KR20120099733A (ko) | 2012-09-11 |
| TW201142969A (en) | 2011-12-01 |
| EP2517234A2 (en) | 2012-10-31 |
| US20120115258A1 (en) | 2012-05-10 |
| TWI528482B (zh) | 2016-04-01 |
| US8822242B2 (en) | 2014-09-02 |
| WO2011077344A3 (en) | 2011-10-13 |
| JP2013516063A (ja) | 2013-05-09 |
| US20110212550A1 (en) | 2011-09-01 |
| US20110212547A1 (en) | 2011-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8822242B2 (en) | Methods for monitoring the amount of metal contamination in a process | |
| US8796116B2 (en) | Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods | |
| JP2014508405A5 (enExample) | ||
| US20140273405A1 (en) | Semiconductor-on-insulator wafer manufacturing method for reducing light point defects and surface roughness | |
| US7517706B2 (en) | Method for evaluating quality of semiconductor substrate and method for manufacturing semiconductor substrate | |
| EP1968102A2 (en) | Method of evaluation of bonded wafer | |
| JP7661510B2 (ja) | 半導体基板の応力ロバストネスを試験するための方法 | |
| JP3896919B2 (ja) | シリコンウエーハのＮｉ汚染の評価方法 | |
| JP5042445B2 (ja) | シリコンウェーハのゲッタリング効率を評価する方法 | |
| US11798802B2 (en) | Methods for stripping and cleaning semiconductor structures | |
| JP2005228848A (ja) | Ｓｉｍｏｘウェーハの検査方法及びそのｓｉｍｏｘウェーハの製造方法 | |
| KR100501110B1 (ko) | 실리콘웨이퍼의 표면 근방 결함 분석 방법 | |
| JPWO2000014783A1 (ja) | エピタキシャルウェーハ及びその製造方法 |