TWI528482B - 用於在晶圓處理期間監控傳遞至半導體晶圓的汙染物量之方法 - Google Patents
用於在晶圓處理期間監控傳遞至半導體晶圓的汙染物量之方法 Download PDFInfo
- Publication number
- TWI528482B TWI528482B TW099145375A TW99145375A TWI528482B TW I528482 B TWI528482 B TW I528482B TW 099145375 A TW099145375 A TW 099145375A TW 99145375 A TW99145375 A TW 99145375A TW I528482 B TWI528482 B TW I528482B
- Authority
- TW
- Taiwan
- Prior art keywords
- metal
- insulator
- layer
- wafer
- contaminant
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 130
- 239000000356 contaminant Substances 0.000 title claims description 129
- 239000004065 semiconductor Substances 0.000 title claims description 67
- 238000012545 processing Methods 0.000 title claims description 29
- 238000012544 monitoring process Methods 0.000 title claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 161
- 239000002184 metal Substances 0.000 claims description 161
- 235000012431 wafers Nutrition 0.000 claims description 137
- 230000008569 process Effects 0.000 claims description 63
- 239000012212 insulator Substances 0.000 claims description 48
- 238000000137 annealing Methods 0.000 claims description 38
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 34
- 239000002244 precipitate Substances 0.000 claims description 34
- 229910052732 germanium Inorganic materials 0.000 claims description 30
- 238000001816 cooling Methods 0.000 claims description 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 23
- 230000007547 defect Effects 0.000 claims description 21
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 21
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 20
- 229910052707 ruthenium Inorganic materials 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 4
- 238000004090 dissolution Methods 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 239000012808 vapor phase Substances 0.000 claims description 4
- 238000003631 wet chemical etching Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000000678 plasma activation Methods 0.000 claims description 3
- 238000001994 activation Methods 0.000 claims description 2
- 230000004913 activation Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 20
- 238000011156 evaluation Methods 0.000 claims 1
- 229920006395 saturated elastomer Polymers 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000001556 precipitation Methods 0.000 description 10
- 238000011109 contamination Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 8
- 239000011651 chromium Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 101710134784 Agnoprotein Proteins 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 101100289792 Squirrel monkey polyomavirus large T gene Proteins 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229940117975 chromium trioxide Drugs 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N chromium trioxide Inorganic materials O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- GAMDZJFZMJECOS-UHFFFAOYSA-N chromium(6+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+6] GAMDZJFZMJECOS-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000029087 digestion Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28987809P | 2009-12-23 | 2009-12-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201142969A TW201142969A (en) | 2011-12-01 |
| TWI528482B true TWI528482B (zh) | 2016-04-01 |
Family
ID=43797704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099145375A TWI528482B (zh) | 2009-12-23 | 2010-12-22 | 用於在晶圓處理期間監控傳遞至半導體晶圓的汙染物量之方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US8143078B2 (enExample) |
| EP (1) | EP2517234A2 (enExample) |
| JP (1) | JP2013516063A (enExample) |
| KR (1) | KR101762463B1 (enExample) |
| CN (1) | CN102687260A (enExample) |
| SG (1) | SG181427A1 (enExample) |
| TW (1) | TWI528482B (enExample) |
| WO (1) | WO2011077344A2 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5407473B2 (ja) * | 2009-03-25 | 2014-02-05 | 株式会社Ｓｕｍｃｏ | シリコンウェーハの製造方法 |
| US9343379B2 (en) * | 2011-10-14 | 2016-05-17 | Sunedison Semiconductor Limited | Method to delineate crystal related defects |
| JP5949303B2 (ja) * | 2012-08-09 | 2016-07-06 | 株式会社Sumco | エピタキシャル成長炉の評価方法およびエピタキシャルウェーハの製造方法 |
| US8835309B2 (en) * | 2012-09-13 | 2014-09-16 | International Business Machines Corporation | Forming nickel—platinum alloy self-aligned silicide contacts |
| CN104078378A (zh) * | 2014-07-02 | 2014-10-01 | 武汉新芯集成电路制造有限公司 | 一种检测金属污染的方法 |
| JP5783312B1 (ja) * | 2014-09-18 | 2015-09-24 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法及び気相成長装置 |
| TWI559424B (zh) * | 2015-03-05 | 2016-11-21 | 力晶科技股份有限公司 | 半導體晶圓的金屬汙染即時監控方法 |
| CN104713588B (zh) * | 2015-03-20 | 2017-03-29 | 上海华力微电子有限公司 | 一种监控电子显微镜真空腔体洁净度的方法 |
| CN106206334B (zh) * | 2015-05-07 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | 监测晶圆以及金属污染的监测方法 |
| CN107301960A (zh) * | 2016-04-15 | 2017-10-27 | 上海新昇半导体科技有限公司 | 晶圆金属污染的评估方法 |
| JP6897764B2 (ja) * | 2017-04-25 | 2021-07-07 | 株式会社Sumco | シリコン単結晶の製造方法、および、エピタキシャルシリコンウェーハの製造方法 |
| US10504805B2 (en) * | 2017-08-24 | 2019-12-10 | Applied Materials Israel Ltd. | Method of examining defects in a semiconductor specimen and system thereof |
| GB2580858B (en) | 2018-09-07 | 2021-07-21 | Memsstar Ltd | A method for detecting defects in thin film layers |
| US10714329B2 (en) * | 2018-09-28 | 2020-07-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pre-clean for contacts |
| CN111106024B (zh) * | 2018-10-26 | 2023-09-29 | 长鑫存储技术有限公司 | 流场分布的检测方法 |
| US11211272B2 (en) * | 2019-09-25 | 2021-12-28 | Micron Technology, Inc. | Contaminant detection tools and related methods |
| WO2021159225A1 (en) | 2020-02-10 | 2021-08-19 | Yangtze Memory Technologies Co., Ltd. | Metal contamination test apparatus and method |
| US12278124B2 (en) * | 2021-10-28 | 2025-04-15 | Applied Materials, Inc. | Model-based controlled load lock pumping scheme |
| CN115793416B (zh) * | 2023-01-16 | 2023-04-25 | 广州粤芯半导体技术有限公司 | 半导体器件制备方法及监测光刻工艺化学品杂质的方法 |
| US12467877B2 (en) | 2023-01-31 | 2025-11-11 | Globalwafers Co., Ltd. | Methods for detecting defects in a single crystal silicon structure |
| CN116387174B (zh) * | 2023-03-27 | 2024-11-22 | 马鞍山芯乔科技有限公司 | 一种晶圆传递夹具污染自检测装置及其检测工艺 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2617798B2 (ja) | 1989-09-22 | 1997-06-04 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
| JPH07106512A (ja) | 1993-10-04 | 1995-04-21 | Sharp Corp | 分子イオン注入を用いたｓｉｍｏｘ処理方法 |
| JP3544280B2 (ja) | 1997-03-27 | 2004-07-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| EP0869352A1 (en) * | 1997-04-03 | 1998-10-07 | Applied Materials, Inc. | Method for detecting metallic contaminants in submicron silicon surface layers of a semiconductor wafer |
| US6033974A (en) | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
| JP3917245B2 (ja) | 1997-07-10 | 2007-05-23 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | シリコンウェーハ及び熱処理用ボート、チューブの評価方法 |
| JPH1174493A (ja) * | 1997-08-29 | 1999-03-16 | Sumitomo Metal Ind Ltd | Ｓｏｉウエーハの欠陥検査方法 |
| JP3704426B2 (ja) * | 1997-10-31 | 2005-10-12 | 信越半導体株式会社 | 金属不純物析出履歴の評価方法 |
| JP2000040723A (ja) | 1998-07-23 | 2000-02-08 | Shin Etsu Handotai Co Ltd | 金属不純物検査用ウエーハ及び該ウエーハを用いた金属不純物検査方法 |
| JP2000164476A (ja) * | 1998-11-26 | 2000-06-16 | Mitsubishi Electric Corp | 半導体製造工程の管理方法、半導体製造装置の管理方法、及び半導体製造環境の管理方法 |
| US6284384B1 (en) * | 1998-12-09 | 2001-09-04 | Memc Electronic Materials, Inc. | Epitaxial silicon wafer with intrinsic gettering |
| JP3899715B2 (ja) * | 1998-12-24 | 2007-03-28 | 株式会社Ｓｕｍｃｏ | シリコンウェーハ表面の検査方法 |
| JP2001050874A (ja) * | 1999-08-04 | 2001-02-23 | Mitsubishi Electric Corp | 半導体基板の検査方法 |
| JP2002110688A (ja) | 2000-09-29 | 2002-04-12 | Canon Inc | Ｓｏｉの熱処理方法及び製造方法 |
| US6528335B2 (en) * | 2001-02-14 | 2003-03-04 | International Business Machines Corporation | Electrical method for assessing yield-limiting asperities in silicon-on-insulator wafers |
| JP2003288112A (ja) * | 2002-03-28 | 2003-10-10 | Matsushita Electric Ind Co Ltd | 生産管理方法 |
| JP4252258B2 (ja) * | 2002-05-27 | 2009-04-08 | 株式会社Ｓｕｍｃｏ | Ｓｏｉ基板のｈｆ欠陥評価方法 |
| EP1369682A3 (en) | 2002-06-07 | 2004-12-01 | Interuniversitair Microelektronica Centrum Vzw | A method for wafer level detection of integrity of a layer |
| US7016028B2 (en) | 2002-06-07 | 2006-03-21 | Interuniversitair Microelektronica Centrum (Imec) | Method and apparatus for defect detection |
| US6825050B2 (en) * | 2002-06-07 | 2004-11-30 | Lam Research Corporation | Integrated stepwise statistical process control in a plasma processing system |
| US20040241867A1 (en) | 2003-01-17 | 2004-12-02 | Jones Mark L. | Method of analyzing a wafer for metal impurities |
| US7570353B2 (en) * | 2005-12-16 | 2009-08-04 | Infineon Technologies Ag | Fabrication and test methods and systems |
| US7517706B2 (en) | 2006-07-21 | 2009-04-14 | Sumco Corporation | Method for evaluating quality of semiconductor substrate and method for manufacturing semiconductor substrate |
-
2010
- 2010-12-16 US US12/970,139 patent/US8143078B2/en active Active
- 2010-12-17 CN CN2010800580774A patent/CN102687260A/zh active Pending
- 2010-12-17 EP EP10813030A patent/EP2517234A2/en not_active Withdrawn
- 2010-12-17 SG SG2012036067A patent/SG181427A1/en unknown
- 2010-12-17 KR KR1020127016382A patent/KR101762463B1/ko active Active
- 2010-12-17 WO PCT/IB2010/055925 patent/WO2011077344A2/en not_active Ceased
- 2010-12-17 JP JP2012545505A patent/JP2013516063A/ja active Pending
- 2010-12-22 TW TW099145375A patent/TWI528482B/zh active
-
2011
- 2011-05-11 US US13/105,392 patent/US20110212550A1/en not_active Abandoned
- 2011-05-11 US US13/105,381 patent/US20110212547A1/en not_active Abandoned
-
2012
- 2012-01-18 US US13/353,142 patent/US8822242B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011077344A2 (en) | 2011-06-30 |
| US20110151592A1 (en) | 2011-06-23 |
| CN102687260A (zh) | 2012-09-19 |
| US8143078B2 (en) | 2012-03-27 |
| SG181427A1 (en) | 2012-07-30 |
| KR101762463B1 (ko) | 2017-07-27 |
| KR20120099733A (ko) | 2012-09-11 |
| TW201142969A (en) | 2011-12-01 |
| EP2517234A2 (en) | 2012-10-31 |
| US20120115258A1 (en) | 2012-05-10 |
| US8822242B2 (en) | 2014-09-02 |
| WO2011077344A3 (en) | 2011-10-13 |
| JP2013516063A (ja) | 2013-05-09 |
| US20110212550A1 (en) | 2011-09-01 |
| US20110212547A1 (en) | 2011-09-01 |
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