TWI567997B - 用於金屬氧化物半導體薄膜電晶體之介電薄膜的針孔評估方法 - Google Patents

用於金屬氧化物半導體薄膜電晶體之介電薄膜的針孔評估方法 Download PDF

Info

Publication number
TWI567997B
TWI567997B TW103107323A TW103107323A TWI567997B TW I567997 B TWI567997 B TW I567997B TW 103107323 A TW103107323 A TW 103107323A TW 103107323 A TW103107323 A TW 103107323A TW I567997 B TWI567997 B TW I567997B
Authority
TW
Taiwan
Prior art keywords
active layer
dielectric layer
layer
thickness
oxide
Prior art date
Application number
TW103107323A
Other languages
English (en)
Chinese (zh)
Other versions
TW201507166A (zh
Inventor
任東吉
泰景 元
卓尚美
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201507166A publication Critical patent/TW201507166A/zh
Application granted granted Critical
Publication of TWI567997B publication Critical patent/TWI567997B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW103107323A 2013-03-12 2014-03-12 用於金屬氧化物半導體薄膜電晶體之介電薄膜的針孔評估方法 TWI567997B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201361778223P 2013-03-12 2013-03-12

Publications (2)

Publication Number Publication Date
TW201507166A TW201507166A (zh) 2015-02-16
TWI567997B true TWI567997B (zh) 2017-01-21

Family

ID=51528892

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103107323A TWI567997B (zh) 2013-03-12 2014-03-12 用於金屬氧化物半導體薄膜電晶體之介電薄膜的針孔評估方法

Country Status (6)

Country Link
US (1) US9245809B2 (enExample)
JP (1) JP2016514372A (enExample)
KR (1) KR101757400B1 (enExample)
CN (1) CN105009297B (enExample)
TW (1) TWI567997B (enExample)
WO (1) WO2014158955A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7052367B2 (ja) * 2018-01-18 2022-04-12 株式会社デンソー 半導体装置の製造方法
CN111599707A (zh) * 2020-05-27 2020-08-28 广州粤芯半导体技术有限公司 钝化层微裂纹的检测方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599241A (en) * 1983-12-28 1986-07-08 Oki Electric Industry Co., Ltd. Method for inspecting defects of thin material film
US6225137B1 (en) * 2000-03-21 2001-05-01 Oki Electric Industry Co., Ltd. Semiconductor wafer evaluation method

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057225B2 (ja) * 1980-04-26 1985-12-13 三菱電機株式会社 半導体装置の試験方法
JPH0810195B2 (ja) * 1986-11-04 1996-01-31 松下電子工業株式会社 ピンホールの検査方法
JP2807679B2 (ja) * 1988-07-08 1998-10-08 住友シチックス株式会社 シリコン基板の絶縁膜欠陥検出方法
JPH05226367A (ja) * 1992-02-14 1993-09-03 Fuji Xerox Co Ltd 半導体素子の製造方法
JPH0677484A (ja) * 1992-08-27 1994-03-18 Sharp Corp 薄膜トランジスタ及びその製造方法
EP0608628A3 (en) * 1992-12-25 1995-01-18 Kawasaki Steel Co Method for manufacturing a semiconductor device with a multilayer connection structure.
JPH07283282A (ja) * 1994-04-08 1995-10-27 Sony Corp 絶縁膜の欠陥検出方法
JPH0831898A (ja) * 1994-07-18 1996-02-02 Hitachi Ltd 半導体ウエハの酸化膜評価方法
JPH1022283A (ja) * 1996-07-05 1998-01-23 Nippon Steel Corp 半導体装置の製造方法
US6440870B1 (en) * 2000-07-12 2002-08-27 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
JP2004221379A (ja) * 2003-01-16 2004-08-05 Matsushita Electric Ind Co Ltd 絶縁膜の評価方法
CN100418194C (zh) * 2003-02-19 2008-09-10 信越半导体股份有限公司 Soi晶片的制造方法及soi晶片
US20050029226A1 (en) * 2003-08-07 2005-02-10 Advanced Power Technology, Inc. Plasma etching using dibromomethane addition
US6949481B1 (en) 2003-12-09 2005-09-27 Fasl, Llc Process for fabrication of spacer layer with reduced hydrogen content in semiconductor device
JP2005268507A (ja) * 2004-03-18 2005-09-29 Furukawa Electric Co Ltd:The 電界効果トランジスタ及びその製造方法
JP4785721B2 (ja) * 2006-12-05 2011-10-05 キヤノン株式会社 エッチング方法、パターン形成方法、薄膜トランジスタの製造方法及びエッチング液
JP5330739B2 (ja) * 2007-06-29 2013-10-30 ユー・ディー・シー アイルランド リミテッド 有機ｅｌ表示装置およびその製造方法
US20090001360A1 (en) * 2007-06-29 2009-01-01 Masaya Nakayama Organic el display and method for producing the same
KR101412761B1 (ko) 2008-01-18 2014-07-02 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
US8258511B2 (en) 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
CN102110625B (zh) * 2009-12-24 2012-07-25 中芯国际集成电路制造(上海)有限公司 一种针孔类生长缺陷的检测方法
WO2012024114A2 (en) 2010-08-20 2012-02-23 Applied Materials, Inc. Methods for forming a hydrogen free silicon containing dielectric film
CN103270578B (zh) 2010-12-30 2016-10-26 应用材料公司 使用微波等离子体的薄膜沉积

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599241A (en) * 1983-12-28 1986-07-08 Oki Electric Industry Co., Ltd. Method for inspecting defects of thin material film
US6225137B1 (en) * 2000-03-21 2001-05-01 Oki Electric Industry Co., Ltd. Semiconductor wafer evaluation method

Also Published As

Publication number Publication date
CN105009297A (zh) 2015-10-28
US20140273312A1 (en) 2014-09-18
KR101757400B1 (ko) 2017-07-12
WO2014158955A1 (en) 2014-10-02
US9245809B2 (en) 2016-01-26
KR20150127144A (ko) 2015-11-16
CN105009297B (zh) 2019-06-14
JP2016514372A (ja) 2016-05-19
TW201507166A (zh) 2015-02-16

Similar Documents

Publication Publication Date Title
US11456212B2 (en) Platform and method of operating for integrated end-to-end fully self-aligned interconnect process
TWI631658B (zh) 基底支撐板和包含上述的薄膜沈積裝置
CN105051907A (zh) 多层钝化或蚀刻终止tft
US20120241412A1 (en) Plasma processing apparatus and plasma processing method
US20110217796A1 (en) Etching method and apparatus
US10338057B2 (en) Device and method for forming same
US9780037B2 (en) Method of processing target object
US9245764B2 (en) Semiconductor device manufacturing method
TWI567997B (zh) 用於金屬氧化物半導體薄膜電晶體之介電薄膜的針孔評估方法
US9704762B2 (en) Application of in-line glass edge-inspection and alignment check in display manufacturing
US20150219565A1 (en) Application of in-line thickness metrology and chamber matching in display manufacturing
US7745236B2 (en) Floating gate process methodology
US20220306460A1 (en) Thin films and methods of fabrication thereof
Loveday et al. Accurate Etch Depth Control to Optimize Critical Process Step for p‐GaN High Electron Mobility Transistors Fabrication
US6985222B2 (en) Chamber leakage detection by measurement of reflectivity of oxidized thin film
TW202540478A (zh) 抗電漿塗層
TW201841281A (zh) 用於薄膜之材料性質分析之方法及系統

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees