TWI631658B - 基底支撐板和包含上述的薄膜沈積裝置 - Google Patents

基底支撐板和包含上述的薄膜沈積裝置 Download PDF

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TWI631658B
TWI631658B TW106108226A TW106108226A TWI631658B TW I631658 B TWI631658 B TW I631658B TW 106108226 A TW106108226 A TW 106108226A TW 106108226 A TW106108226 A TW 106108226A TW I631658 B TWI631658 B TW I631658B
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substrate
support plate
substrate support
gas
top surface
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劉龍珉
宗源 孫
崔丞佑
姜東錫
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荷蘭商Ａｓｍ知識產權私人控股有限公司
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Abstract

本發明提供一種基底支撐板和包含其的薄膜沉積設備。所 述基底支撐板可防止基底的後表面上的沉積且可易於卸載所述基底。所述基底支撐板可包含：基底安裝部分；以及週邊部分，其圍繞所述基底安裝部分，且所述基底安裝部分的頂部表面的邊緣部分可經陽極氧化，且所述基底安裝部分的所述頂部表面的中心部分可不經陽極氧化。

Description

基底支撐板和包含上述的薄膜沈積裝置 〔相關申請的交叉參考〕
本申請主張2016年3月17日於韓國智慧財產權局申請的韓國專利申請案第10-2016-0032079號的權益，其全部內容以參考方式併入本文。
一或多個實施例涉及一種基底支撐板，且更確切來說涉及一種基底支撐板、一種包含所述基底支撐板的薄膜沉積設備和一種使用所述基底支撐板的薄膜沉積方法。
當沉積半導體薄膜時，用於確定薄膜品質的各種因素當中的一個重要因素為製程中的殘餘粒子的污染。
舉例來說，在源氣體與反應氣體之間的快速切換循環的製程(例如，原子層沉積(atomic layer deposition；ALD)製程)中，未從反應器移除的氣體（例如，源氣體）仍可與另一氣體（例如，反應氣體）反應且可充當反應器中的污染物。污染物會滲透到基底上的裝置結構中，進而導致半導體裝置的故障。
更詳細地說，在製程期間，源氣體或反應氣體會滲透到基底與上面安裝有基底的晶座之間。因此，氣體可保留，且所述氣體會沉積在基底的後表面上。在此情況下，形成於基底上的裝置可能被污染，且當基底與晶座分離時，反應空間中的污染粒子會擴散且反應器也可能被污染。
一或多個實施例包含一種可防止源氣體或反應氣體沉積在基底的後表面上的基底支撐板、一種包含所述基底支撐板的薄膜沉積設備和一種使用所述基底支撐板的薄膜沉積方法。
額外方面將在以下描述中得以部分地闡述，並且部分地，將從描述中顯而易見，或者可通過對所呈現的實施例的實踐而習得。
根據一或多個實施例，一種基底支撐板包含：基底安裝部分；以及週邊部分，其圍繞所述基底安裝部分，其中所述基底安裝部分的頂部表面的邊緣部分經陽極氧化，且所述基底安裝部分的所述頂部表面的中心部分不經陽極氧化。
所述基底支撐板可進一步包含基底支撐銷孔。所述基底支撐銷孔可形成於所述中心部分中。
所述基底安裝部分可具有相對於所述週邊部分的凹形。
所述經陽極氧化邊緣部分可具有在約10 mm到約100 mm範圍內的厚度。
所述中心部分的面積可小於待處理的目標基底的面積。
絕緣層歸因於陽極氧化而可形成於所述邊緣部分的頂部表面上。所述絕緣層可包含氧化鋁。
與所述頂部表面相對的底部表面的至少一部分可經陽極氧化。
根據一或多個實施例，一種薄膜沉積設備包含：反應器壁；氣體注射裝置；氣體通道；氣體流動控制裝置；以及基底支撐板，其中所述氣體注射裝置、所述氣體通道和所述氣體流動控制裝置依序堆疊且提供在所述反應器壁中，其中所述基底支撐板包括頂部表面、底部表面和側表面，且絕緣層形成於所述基底支撐板的所述頂部表面的至少一部分和所述底部表面的至少一部分上。
所述絕緣層可進一步形成於所述基底支撐板的所述側表面上。
所述絕緣層可從所述基底支撐板的所述頂部表面突出。
由所述氣體通道和所述氣體注射裝置供應的氣體可被注射到所述基底支撐板上的基底上，其中所述所注射氣體的至少一部分經由所述氣體流動控制裝置排出。所述基底可被安置成與所述絕緣層重疊。
所述所注射氣體可滲透到所述基底與所述基底支撐板之間的空間中以在所述基底的後表面上形成薄膜。
所述基底支撐板可包含基底安裝部分和圍繞所述基底安裝部分的週邊部分，其中所述週邊部分經由所述週邊部分與所述反應器壁之間的面密封（face sealing）接觸所述反應器壁以形成反應空間。
根據一或多個實施例，一種薄膜沉積方法包含：將待處理的目標基底安裝在所述基底支撐板上；通過使用在所述目標基底上累積的電荷將所述目標基底緊密附接到所述基底支撐板，同時將第一薄膜沉積在所述目標基底上；以及卸載所述目標基底。
所述第一薄膜的沉積可包含：供應第一氣體；通過供應吹掃氣體而移除保留的所述第一氣體；供應第二氣體和電漿；以及通過供應所述吹掃氣體而移除保留的第二氣體。
在沉積所述第一薄膜時，第二薄膜可形成於所述目標基底的後表面上。所述第二薄膜的寬度可小於邊緣排除部分（edge excluding portion）的寬度。舉例來說，當膜沉積在300 mm晶圓上時，邊緣排除部分的寬度可確定為3 mm。
現在將參考附圖更加完整地描述本發明，在所述附圖中繪示了本發明的實施例。
現在將參考附圖在下文中更加完整地描述本發明。然而，本發明可以用許多不同形式體現，並且不應被解釋為限於本文中所闡述的實施例。而是，提供這些實施例是為了使得本發明將是透徹並且完整的，並且將本發明的範圍完整地傳達給所屬領域的技術人員。
本文中所使用的術語僅僅是出於描述實施例的目的，且並不意圖限制本發明的實施例。如本文中所使用，除非上下文另外清楚地指示，否則單數形式“一”和“所述”既定還包含複數形式。將進一步理解，術語“包括”和/或“包含”在於本文中使用時指定所陳述的特徵、整數、步驟、操作、元件、元件和/或群組的存在，但並不排除一或多個其它特徵、整數、步驟、操作、元件、元件和/或其群組的存在或添加。如本文中所使用，術語“和/或”包含相關聯的所列項目中的一或多者的任何和所有組合。
將理解，雖然本文中可使用術語“第一”、“第二”等來描述各種部件、區、層和/或部分，但這些部件、區、層和/或部分不應受這些術語限制。所述術語並不指特定次序、垂直關係或偏好，且僅用於區分一個部件、區或部分與另一部件、區或部分。因此，在不脫離本發明的教示的情況下，下文將描述的第一部件、區或部分可指代第二部件、區或部分。
現在將參考附圖更加完整地描述本發明，在所述附圖中繪示了本發明的實施例。在附圖中，應預期說明的形狀作為（例如）製造技術和/或公差的結果而有所變化。因此，實施例不應當解釋為限於本文中所說明的區的特定形狀，但可包含（例如）由製造引起的形狀偏差。
例如“中的至少一者”等表述當在元件列表之前時修飾元件的整個列表且不是修飾列表的個別元件。
現在將參考圖1解釋根據實施例的沉積設備。圖1為根據實施例的半導體製造設備100的橫截面圖。在圖1的半導體製造設備100中，反應器壁101可接觸基底支撐板103。更詳細地說，反應器壁101的底部表面可接觸充當下部電極的基底支撐板103以在反應器壁101與基底支撐板103之間形成反應空間125。
換句話說，基底支撐板103可經配置以經由面密封接觸反應器壁101，且歸因於面密封而可在反應器壁101與基底支撐板103之間形成反應空間125。並且，歸因於面密封而可在反應器壁101與氣體流動控制裝置105之間且在反應器壁101與氣體供應裝置109之間形成氣體排出路徑117。
氣體流動控制裝置105和氣體供應裝置109可安置在反應器壁101與基底支撐板103之間。氣體流動控制裝置105和氣體供應裝置109可彼此一體地形成，或可獨立形成具有氣體注射孔133的部分。在後一種情況下，氣體流動控制裝置105可堆疊在氣體供應裝置109上。任選地，氣體供應裝置109可為單獨的，且在此情況下，氣體供應裝置109可包含具有多個通孔的氣體注射裝置和堆疊在氣體注射裝置上的氣體通道（參見圖3）。
氣體流動控制裝置105可包含板和從板突出的側壁123。穿過側壁123的多個通孔111可形成於側壁123中。
用於容納例如O形環等密封部件的凹槽127、129和131可在反應器壁101與氣體流動控制裝置105之間且在氣體流動控制裝置105與氣體供應裝置109之間形成。歸因於密封部件，可防止外部氣體被引入到反應空間125中。並且，歸因於密封部件，反應空間125中的反應氣體可沿正常路徑（即，氣體排出路徑117和出氣口115（參見圖2））流動。因此，可防止反應氣體洩漏到除正常路徑以外的部分。
氣體供應裝置109可在電漿製程（例如，電容耦合電漿（capacitively coupled plasma；CCP）方法）中用作電極。在此情況下，氣體供應裝置109可包含例如鋁（Al）的金屬材料。在CCP方法中，基底支撐板103可被用作電極，且因此可由充當第一電極的氣體供應裝置109和充當第二電極的基底支撐板103實現電容耦合。
更詳細地說，由外部電漿產生器（未繪示）產生的RF功率可經由射頻（radio frequency；RF）杆313（參見圖3）傳遞到氣體供應裝置109。RF杆313可經由穿過氣體流動控制裝置105和反應器壁101的上部部分的RF杆孔303（參見圖3）機械連接到氣體供應裝置109。
任選地，氣體供應裝置109可由導體製成，而氣體流動控制裝置105可由例如陶瓷的絕緣材料製成，且因此被用作電漿電極的氣體供應裝置109可與反應器壁101絕緣。
如圖1中所繪示，穿過反應器壁101和氣體流動控制裝置105的中心部分的進氣口113形成於反應器壁101的上部部分中。並且，氣體流動路徑119可另外形成於氣體供應裝置109中，使得由外部氣體供應單元（未繪示）經由進氣口113供應的反應氣體可均勻地供應到氣體供應裝置109的氣體注射孔133。
並且，如圖1中所繪示，在反應器壁101的上端處相對於進氣口113不對稱地提供出氣口115。儘管圖1中未繪示，但出氣口115可與進氣口113對稱。並且，在製程之後排出反應氣體的殘餘氣體所經由的氣體排出路徑117可在反應器壁101與氣體流動控制裝置105的側壁（和氣體供應裝置109的側壁）彼此間隔開時形成於其間的空間中。
圖2為說明根據實施例的半導體製造設備100中的反應氣體（和殘餘氣體）的流動的橫截面圖。箭頭標記氣體流動的方向，且由外部氣體供應單元（未繪示）經由進氣口113供應的反應氣體可經由氣體流動路徑119均勻地供應到形成於簇射頭中的氣體注射孔133中。
可在存在反應氣體的反應空間125中或基底110上執行化學反應，以在基底110上形成薄膜。在形成薄膜之後的殘餘氣體可穿過在反應器壁101與氣體供應裝置109的側壁之間形成的氣體排出路徑117，可穿過形成於氣體流動控制裝置105的側壁123中的通孔111，可引入到氣體流動控制裝置105的內部空間中，且隨後可經由出氣口115排出到外部。
圖3為根據另一實施例的半導體製造設備100的橫截面圖。參考圖3，氣體流動控制裝置105包含側壁123、進氣口113、由側壁123圍繞的板301、RF杆孔303、螺釘孔305、通孔111和用於接納例如O形環的密封部件的凹槽127。
板301可由突出的側壁123圍繞，使得板301具有凹形。引入外部反應氣體所經由的進氣口113被安置在氣體流動控制裝置105的一部分中。至少兩個螺釘孔305環繞進氣口113形成，且為用於連接氣體流動控制裝置105和氣體供應裝置109的機械連接部件的螺釘穿過螺釘孔305。RF杆孔303形成於氣體流動控制裝置105的另一部分中，使得連接到外部電漿供應單元（未繪示）的RF杆313連接到位於氣體流動控制裝置105下的氣體供應裝置109。
連接到RF杆313的氣體供應裝置109可在使用CCP方法的電漿製程中充當電極。在此情況下，由氣體供應裝置109的氣體通道和氣體注射裝置供應的氣體可由充當電極的氣體供應裝置109活化，且可被注射到基底支撐板103上的基底110上。
圖4為根據現有技術的基底支撐板P的橫截面圖。
參考圖4，基底支撐板P可包含週邊部分A和基底安裝部分M，且基底支撐銷孔H可形成於基底支撐板P中。基底安裝部分M可從週邊部分A成凹形。基底安裝部分M的內部側壁可具有傾斜形狀（即，凹形），使得基底準確位於凹形空間中。
基底支撐銷進入所經由的基底支撐銷孔H可形成於基底支撐板P（例如，晶座）中以便裝載/卸載基底。週邊部分A可經由面密封接觸反應器壁101（參見圖1）以提供用於形成反應空間的面，如圖1到圖3中所繪示。
圖5為說明根據現有技術的在於反應空間中對基底支撐板P執行沉積時製程氣體滲透到目標基底的後表面中的情況的橫截面圖。
參考圖5，甚至在目標基底S安裝於基底支撐板P（例如，晶座）上且緊密附接到基底支撐板P時，製程氣體可滲透到目標基底S的後表面的邊緣部分中。更詳細地說，源氣體和/或反應氣體可穿過目標基底S的邊緣部分滲透到10 mm的深度以保留在目標基底S的後表面上。保留在後表面上的殘餘氣體除了在後續製程中污染目標基底S上的裝置結構以外，還會做為反應器中的污染物，進而使半導體裝置的品質降級。
在根據實施例的半導體製造設備中，通過陽極氧化基底支撐板（例如，晶座），換句話說，通過在金屬的表面上形成薄氧化物膜來解決以上問題。
更詳細地說，根據一些實施例，基底支撐板的接觸基底的一部分經陽極氧化，使得基底支撐板緊密附接到基底，且基底支撐板的僅一部分經陽極氧化，使得基底在製程結束之後易於分離。優選的是，僅基底支撐板的接觸基底的邊緣部分可經陽極氧化。
由此，由於基底支撐板的頂部表面經陽極氧化，因此在電漿製程期間基底支撐板與基底之間的黏著力可增大，且因此可防止製程氣體在製程期間滲透到基底的後表面中。並且，由於僅基底支撐板的一部分經陽極氧化，因此基底在製程之後可易於分離。
更詳細地說，在電漿製程（例如，電漿增強型原子層沉積（plasma-enhanced atomic layer deposition；PE-ALD）製程）中，當基底支撐板的整個頂部表面經陽極氧化時，基底歸因於在基底上累積的RF電荷而附接到基底支撐板。在此情況下，甚至在電漿製程結束之後，附接到基底支撐板的基底持續被附接，進而使得難以卸載基底。然而，根據實施例，由於基底支撐板的頂部表面的一部分（例如，基底支撐板的接觸基底的邊緣）經陽極氧化，因此可防止製程氣體滲透到基底的後表面中，且歸因於靜電力而緊密附接到基底支撐板的基底可更易於卸載。
在任選的實施例中，由於基底支撐板的接觸基底的邊緣經陽極氧化，因此具有環形狀（例如，四邊形環形狀或圓環形狀）的絕緣層（例如，由氧化鋁製成的絕緣層）可形成於基底支撐板上。可經由實驗來確定形成於基底支撐板上的絕緣層的寬度。
圖6和圖7分別為根據實施例的基底支撐板P的橫截面圖和平面圖。
參考圖6和圖7，基底支撐板P可包含基底安裝部分M和圍繞基底安裝部分M的週邊部分A，且基底安裝部分M可具有相對於週邊部分A的凹形，如上文所描述。
基底安裝部分M的頂部表面的邊緣部分E的一部分（例如，不包含或包含邊緣部分E的傾斜側壁的部分）可經陽極氧化，且頂部表面的中心部分C可不經陽極氧化。為了定位目標基底S以使得目標基底S與經陽極氧化部分重疊，中心部分C的面積可小於目標基底S的面積。週邊部分A可不經陽極氧化，如圖6中所繪示，或週邊部分A的至少一部分可經陽極氧化（參見圖8、圖12、圖14和圖15）。
當邊緣部分E經陽極氧化時，絕緣層D可形成於邊緣部分E的頂部表面上。當目標基底S具有圓形形狀（如晶圓）時，絕緣層D可形成為具有圓環形狀。相比之下，當目標基底S具有四邊形形狀（如顯示面板）時，絕緣層D可形成為具有四邊形環形狀。也就是說，歸因於陽極氧化而形成的絕緣層D可形成為具有符合目標基底S的形狀的環形狀。
在實施例中，基底支撐板P可包含金屬，且可通過陽極氧化金屬來形成絕緣層（例如，金屬氧化物層）。舉例來說，基底支撐板P可包含鋁，且可歸因於陽極氧化而形成氧化鋁層。氧化鋁層的厚度可在約10 mm到約100 mm的範圍內，且優選地，可在約15 mm到約45 mm的範圍內。
根據實施例，基底支撐板P（例如，晶座）的接觸目標基底S的部分（例如，邊緣）經陽極氧化，且目標基底S被安置成與歸因於陽極氧化而形成的絕緣層D重疊。因此，目標基底S與基底支撐板P可彼此緊密附接，且因此可防止製程氣體在電漿製程期間滲透到其間，且可避免例如反應器的污染、裝置良品率下降和歸因於目標基底S的後表面上的沉積的後續製程中的污染等問題。並且，由於基底支撐板P經部分陽極氧化且目標基底S與歸因於陽極氧化而形成的絕緣層D重疊，因此在製程之後可易於卸載目標基底S。
圖8為根據其它實施例的基底支撐板P的橫截面圖。
參考圖8，基底支撐板P可包含頂部表面、底部表面和側表面，且絕緣層D可形成於基底支撐板P的頂部表面的至少一部分、底部表面和側表面上。絕緣層D可通過陽極氧化形成。
為了形成圖8的基底支撐板P，絕緣層D可形成於基底支撐板P上且隨後可移除絕緣層D的一部分。舉例來說，從形成於基底支撐板P的基底安裝部分M的頂部表面上的絕緣層D的部分當中，可對形成於中心部分C上的部分（未繪示）執行機械移除製程，以暴露基底支撐板P的金屬表面。因此，絕緣層D可具有從基底支撐板P的經暴露頂部表面突出的階梯形狀。歸因於階梯形狀,目標基底S與基底支撐板P可彼此更緊密附接。
通過使用圖6到圖8的基底支撐板P來沉積薄膜的方法可包含以下步驟。
- 第一步驟：將目標基底S安裝於基底支撐板P上。如上文所描述，歸因於陽極氧化而形成的絕緣層D形成於基底支撐板P上以部分地與目標基底S重疊，且因此目標基底S與絕緣層D重疊。
- 第二步驟：通過使用在目標基底S上累積的電荷將目標基底S緊密附接到基底支撐板P。歸因於目標基底S與包含絕緣層D的基底支撐板P之間的靜電力（具體來說，在目標基底S與絕緣層D彼此重疊的位置處產生的靜電力），目標基底S可緊密附接到基底支撐板P。在此步驟中，可在目標基底S的沉積製程期間累積電荷。
-第三步驟：將第一薄膜沉積在目標基底S上。可通過使用PE-ALD製程來沉積第一薄膜。舉例來說，可通過供應第一氣體、通過供應吹掃氣體而移除保留的第一氣體、供應第二氣體和電漿和通過供應吹掃氣體而移除保留的第二氣體來沉積第一薄膜。在任選的實施例中，第一氣體或第二氣體可為反應吹掃氣體。任選地，可在第三步驟期間進行第二步驟。
在此實施例中，可同時執行第二步驟和第三步驟，使得目標基底S可緊密附接到基底支撐板P。在電漿沉積製程期間，可對目標基底S充電(即，可在目標基底S中累積電荷)。這導致基底支撐板P的經陽極氧化絕緣層D(以及圖11中的絕緣層D')的極化。由於極化，可產生目標基底S與基底支撐板P之間的靜電力。靜電力導致目標基底S與基底支撐板P之間的緊密附接。
-第四步驟：重複執行第二步驟和/或第三步驟，直到形成具有預定厚度的薄膜。
-第五步驟：卸載上面完整沉積有薄膜的目標基底S。
可通過執行第一步驟到第五步驟將薄膜沉積在目標基底S上。在沉積第一薄膜的第三步驟期間，第二薄膜可形成於目標基底S的後表面上。由於第二薄膜污染形成於目標基底S上的裝置，在卸載目標基底S時在反應空間中擴散污染粒子且因此污染反應器(和後續製程中的設備)，因此第二薄膜必須形成為盡可能小的。為了使第二薄膜盡可能小，必須考慮到為可允許滲透範圍的邊緣排除部分而形成第二薄膜。換句話說，第二薄膜的寬度可小於邊緣排除部分的寬度。
圖9和圖10為繪示說明在基底支撐板未經陽極氧化時(圖9)和在基底支撐板的邊緣經陽極氧化時(圖10)沉積在基底的後表面上的薄膜的厚度的實驗資料的圖表。在圖9和圖10中，垂直軸表示沉積在基底的後表面上的薄膜的厚度，且水準軸表示從基底的後表面的中心到邊緣的距離(mm)。在圖9和圖10中，使用具有300mm直徑的基底，且水準軸繪示距離基底的後表面的中心150mm。也就是說，從目標基底的中心的最左端為-150mm，且從目標基底的中心的最右端為+150mm。並且，所述實驗在包含四個反應器的多腔室(multi-chamber)中執行，且每個線繪示四個反應器中的每一者中的測量結果。
參考說明在基底支撐板未經陽極氧化的情況下沉積在基底的後表面上的薄膜的厚度的圖9，已滲透15mm的橫向深度，且薄膜形成於基底的後表面上。相比之下，參考說明在基底支撐板的接觸基底的邊緣經陽極氧化到40mm的寬度時沉積在基底的後表面上的薄膜的厚度的圖10，已滲透基底的後表面的3mm的橫向深度。3mm的橫向深度屬於為可允許滲透範圍的邊緣排除部分的3mm範圍，且因此不存在問題。並且，由於僅基底支撐板的邊緣經陽極氧化，因此在製程之後基底支撐銷從基底支撐板抬起目標基底S的力可大於目標基底S與基底支撐板之間的黏著力，進而使得易於卸載目標基底S。
圖11到圖15為根據其它實施例的基底支撐板P的橫截面圖。
參考圖11，基底支撐板P可包含通過陽極氧化與頂部表面相對的底部表面的至少一部分而獲得的絕緣層D'。由於絕緣層D'形成於底部表面上，因此包含絕緣層D'的基底支撐板P與目標基底S之間的黏著力可增大。儘管在圖11中基底支撐板P的整個底部表面經陽極氧化，但可僅底部表面的一部分經陽極氧化。儘管在圖11中基底支撐板P的側表面未經陽極氧化，但在任選的實施例中，基底支撐板P的側表面也可經陽極氧化。
參考圖12，歸因於陽極氧化而形成的絕緣層D可形成於週邊部分A上以及基底支撐板P的基底安裝部分M上。並且，如圖13中所繪示，基底支撐板P的基底安裝部分M可類似於週邊部分A而為平坦的，且基底支撐銷孔H可形成於基底安裝部分M的中心部分C中。在任選的實施例中，基底支撐銷孔H可形成於基底安裝部分M的邊緣部分E中或可形成於週邊部分A中。
參考圖14，基底支撐板的絕緣層D的突出側壁可具有圓形輪廓R。當在形成絕緣層D之後機械移除絕緣層D的一部分的機械移除方法變成化學移除方法（例如，使用濕式蝕刻的方法）時，可形成圓形輪廓R。由於經由濕式蝕刻突出的絕緣層D具有圓形輪廓，因此包含絕緣層D的基底支撐板P與目標基底S之間的黏著力可增大。
參考圖15，可在與基底支撐板P的經暴露金屬層的頂部表面的高度實質上相同的高度處形成基底支撐板P的絕緣層D的頂部表面。可透過通過執行以下步驟形成基底支撐板P而形成此類結構，而非通過在形成絕緣層D之後機械移除絕緣層D的一部分的上述製程。
- 第一步驟：在基底支撐板P的基底安裝部分M的中心部分C上形成掩模。
- 第二步驟：使上面形成有掩模的基底支撐板P經受表面處理以形成絕緣層D（也就是說，絕緣層D擴散到基底支撐板P的未形成有掩模的一部分中的預定深度）。
- 第三步驟：移除掩模。
也就是說，可透過通過使用掩模任選地執行表面處理而形成基底支撐板P，而非通過機械移除絕緣層D的一部分的上述製程。在任選的實施例中，歸因於表面處理，基底支撐板P的金屬可變成具有增大的體積的絕緣材料，且在此情況下，絕緣層D的頂部表面可高於基底支撐板P的經暴露金屬層的頂部表面。
實施例不應當解釋為限於為了較好理解本發明的本文中所說明的部分的特定形狀，而是可包含形狀的偏差。
雖然已經參考附圖描述一或多個實施例，但所屬領域的技術人員將理解，在不脫離由申請專利範圍定義的本發明的精神和範圍的情況下可以在其中做出形式和細節的各種改變。
100‧‧‧半導體製造設備
101‧‧‧反應器壁
103‧‧‧基底支撐板
105‧‧‧氣體流動控制裝置
109‧‧‧氣體供應裝置
110‧‧‧基底
111‧‧‧通孔
113‧‧‧進氣口
115‧‧‧出氣口
117‧‧‧氣體排出路徑
119‧‧‧氣體流動路徑
123‧‧‧側壁
125‧‧‧反應空間
127‧‧‧凹槽
129‧‧‧凹槽
131‧‧‧凹槽
133‧‧‧氣體注射孔
301‧‧‧板
303‧‧‧RF杆孔
305‧‧‧螺釘孔
313‧‧‧RF杆
A‧‧‧週邊部分
C‧‧‧中心部分
D‧‧‧絕緣層
D'‧‧‧絕緣層
E‧‧‧邊緣部分
H‧‧‧基底支撐銷孔
M‧‧‧基底安裝部分
P‧‧‧基底支撐板
S‧‧‧目標基底
這些和/或其它方面將從結合附圖對實施例進行的以下描述而變得顯而易見並且更加容易瞭解。 圖1為根據實施例的半導體製造設備的橫截面圖。 圖2為說明根據實施例的半導體製造設備中的反應氣體（和殘餘氣體）的流動的橫截面圖。 圖3為根據另一實施例的半導體製造設備的橫截面圖。 圖4為根據現有技術的基底支撐板的橫截面圖。 圖5為說明根據現有技術的在於反應空間中對基底支撐板執行沉積時製程氣體滲透到待處理的目標基底的後表面中的情況的橫截面圖。 圖6和圖7分別為根據實施例的基底支撐板的橫截面圖和平面圖。 圖8為根據其它實施例的基底支撐板的橫截面圖。 圖9和圖10為說明在基底支撐板未經陽極氧化時和在基底支撐板的邊緣經陽極氧化時沉積在基底的後表面上的薄膜的厚度的圖表。 圖11到圖15為根據其它實施例的基底支撐板的橫截面圖。

Claims (16)

  1. 一種基底支撐板，包括：基底安裝部分；以及週邊部分，圍繞所述基底安裝部分，其中所述基底安裝部分的頂部表面的邊緣部分經陽極氧化，且所述基底安裝部分的所述頂部表面的中心部分不經陽極氧化，使得所述基底支撐板的金屬層被暴露出來，其中經陽極氧化的所述邊緣部分與待處理的目標基底重疊，且其中不經陽極氧化的所述中心部分的面積小於待處理的所述目標基底的面積。
  2. 如申請專利範圍第1項所述的基底支撐板，進一步包括基底支撐銷孔。
  3. 如申請專利範圍第2項所述的基底支撐板，其中所述基底支撐銷孔形成於所述中心部分中。
  4. 如申請專利範圍第1項所述的基底支撐板，其中所述基底安裝部分具有相對於所述週邊部分的凹形。
  5. 如申請專利範圍第1項所述的基底支撐板，其中經陽極氧化的所述邊緣部分具有在约10μm到约100μm的範圍內的厚度。
  6. 如申請專利範圍第1項所述的基底支撐板，其中所述邊緣部分高於所述中心部分。
  7. 如申請專利範圍第1項所述的基底支撐板，其中絕緣層歸 因於陽極氧化而形成於所述邊緣部分的頂部表面上。
  8. 如申請專利範圍第7項所述的基底支撐板，其中所述絕緣層包括氧化鋁。
  9. 如申請專利範圍第1項所述的基底支撐板，其中與所述頂部表面相對的底部表面的至少一部分經陽極氧化。
  10. 一種薄膜沉積設備，包括：反應器壁；氣體注射裝置；氣體通道；氣體流動控制裝置；以及基底支撐板，基底置於所述基底支撐板上，其中所述氣體注射裝置、所述氣體通道和所述氣體流動控制裝置依序堆疊且提供在所述反應器壁中，其中所述基底支撐板包括頂部表面、底部表面和側表面，且絕緣層形成於所述基底支撐板的所述頂部表面的至少一部分和所述底部表面的至少一部分上，其中金屬層暴露在所述頂部表面的另一部分上，其中所述基底與所述絕緣層重疊，且其中被暴露的所述金屬層的面積小於所述基底的面積。
  11. 如申請專利範圍第10項所述的薄膜沉積設備，其中所述絕緣層進一步形成於所述基底支撐板的所述側表面上。
  12. 如申請專利範圍第10項所述的薄膜沉積設備，其中所述 絕緣層從所述基底支撐板的所述頂部表面突出。
  13. 如申請專利範圍第10項所述的薄膜沉積設備，其中由所述氣體通道和所述氣體注射裝置供應的氣體被注射到所述基底支撐板上的基底上，其中所注射的所述氣體的至少一部分經由所述氣體流動控制裝置排出到外部。
  14. 如申請專利範圍第13項所述的薄膜沉積設備，其中所述絕緣層的頂部表面高於所述基底支撐板的被暴露的所述金屬層的頂部表面。
  15. 如申請專利範圍第13項所述的薄膜沉積設備，其中所注射的所述氣體滲透到所述基底與所述基底支撐板之間的空間中，以在所述基底的後表面上形成薄膜。
  16. 如申請專利範圍第10項所述的薄膜沉積設備，其中所述基底支撐板包括基底安裝部分和圍繞所述基底安裝部分的週邊部分，其中所述週邊部分經由面密封接觸所述反應器壁以形成反應空間。
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