JP2016512646A5 - - Google Patents

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Publication number
JP2016512646A5
JP2016512646A5 JP2015543123A JP2015543123A JP2016512646A5 JP 2016512646 A5 JP2016512646 A5 JP 2016512646A5 JP 2015543123 A JP2015543123 A JP 2015543123A JP 2015543123 A JP2015543123 A JP 2015543123A JP 2016512646 A5 JP2016512646 A5 JP 2016512646A5
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JP
Japan
Prior art keywords
cell array
configuration information
word lines
word line
failed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2015543123A
Other languages
English (en)
Japanese (ja)
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JP2016512646A (ja
Filing date
Publication date
Priority claimed from US13/680,361 external-priority patent/US8913450B2/en
Application filed filed Critical
Publication of JP2016512646A publication Critical patent/JP2016512646A/ja
Publication of JP2016512646A5 publication Critical patent/JP2016512646A5/ja
Ceased legal-status Critical Current

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JP2015543123A 2012-11-19 2013-11-19 構成情報を記憶するための予備セクタを有するメモリセルアレイ Ceased JP2016512646A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/680,361 US8913450B2 (en) 2012-11-19 2012-11-19 Memory cell array with reserved sector for storing configuration information
US13/680,361 2012-11-19
PCT/US2013/070817 WO2014078864A2 (en) 2012-11-19 2013-11-19 Memory cell array with reserved sector for storing configuration information

Publications (2)

Publication Number Publication Date
JP2016512646A JP2016512646A (ja) 2016-04-28
JP2016512646A5 true JP2016512646A5 (cg-RX-API-DMAC7.html) 2016-12-28

Family

ID=49759554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015543123A Ceased JP2016512646A (ja) 2012-11-19 2013-11-19 構成情報を記憶するための予備セクタを有するメモリセルアレイ

Country Status (6)

Country Link
US (1) US8913450B2 (cg-RX-API-DMAC7.html)
EP (1) EP2920788A2 (cg-RX-API-DMAC7.html)
JP (1) JP2016512646A (cg-RX-API-DMAC7.html)
KR (1) KR20150087315A (cg-RX-API-DMAC7.html)
CN (1) CN104798136A (cg-RX-API-DMAC7.html)
WO (1) WO2014078864A2 (cg-RX-API-DMAC7.html)

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US9262259B2 (en) * 2013-01-14 2016-02-16 Qualcomm Incorporated One-time programmable integrated circuit security
US9799412B2 (en) * 2014-09-30 2017-10-24 Sony Semiconductor Solutions Corporation Memory having a plurality of memory cells and a plurality of word lines
US9842662B2 (en) * 2015-02-16 2017-12-12 Texas Instruments Incorporated Screening for data retention loss in ferroelectric memories
US9401226B1 (en) * 2015-09-14 2016-07-26 Qualcomm Incorporated MRAM initialization devices and methods
US9911510B1 (en) * 2016-10-07 2018-03-06 Arm Limited Redundancy schemes for memory cell repair
CN107506253B (zh) * 2017-08-11 2021-05-18 北京东土科技股份有限公司 一种操作系统异常信息保存方法及装置
US10643672B2 (en) * 2018-03-23 2020-05-05 Micron Technology, Inc. Memory with non-volatile configurations for efficient power management and operation of the same
US11327860B2 (en) * 2020-02-11 2022-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and methods for programming and reading memory device
KR20220094990A (ko) * 2020-12-29 2022-07-06 삼성전자주식회사 불량 워드라인의 리페어를 위한 메모리 장치, 메모리 컨트롤러 및 이를 포함하는 스토리지 장치
CN115295053B (zh) * 2022-09-30 2023-01-10 芯天下技术股份有限公司 配置信息存储电路、易失性配置方法、装置及闪速存储器

Family Cites Families (24)

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Publication number Priority date Publication date Assignee Title
JP3828222B2 (ja) * 1996-02-08 2006-10-04 株式会社日立製作所 半導体記憶装置
US6462985B2 (en) * 1999-12-10 2002-10-08 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory for storing initially-setting data
JP2001176290A (ja) * 1999-12-10 2001-06-29 Toshiba Corp 不揮発性半導体記憶装置
US6614703B2 (en) 2000-01-13 2003-09-02 Texas Instruments Incorporated Method and system for configuring integrated systems on a chip
JP2002150789A (ja) * 2000-11-09 2002-05-24 Hitachi Ltd 不揮発性半導体記憶装置
JP5138869B2 (ja) 2002-11-28 2013-02-06 ルネサスエレクトロニクス株式会社 メモリモジュール及びメモリシステム
JP4136646B2 (ja) * 2002-12-20 2008-08-20 スパンション エルエルシー 半導体記憶装置及びその制御方法
US7181650B2 (en) * 2003-06-02 2007-02-20 Atmel Corporation Fault tolerant data storage circuit
US7177977B2 (en) * 2004-03-19 2007-02-13 Sandisk Corporation Operating non-volatile memory without read disturb limitations
JP2005327337A (ja) * 2004-05-12 2005-11-24 Matsushita Electric Ind Co Ltd 半導体記憶装置
DE102004047813A1 (de) 2004-09-29 2006-03-30 Infineon Technologies Ag Halbleiterbaustein mit einer Umlenkschaltung
GB2433815B (en) * 2004-10-26 2009-02-25 Spansion Llc Non-volatile memory device
JP5016841B2 (ja) 2006-04-26 2012-09-05 株式会社東芝 不揮発性半導体記憶装置
KR100898673B1 (ko) * 2007-08-08 2009-05-22 주식회사 하이닉스반도체 플래시 메모리 소자 및 그 동작 방법
US7694196B2 (en) 2007-11-20 2010-04-06 Qimonda North America Corp. Self-diagnostic scheme for detecting errors
US8015438B2 (en) 2007-11-29 2011-09-06 Qimonda Ag Memory circuit
US20090235040A1 (en) 2008-03-14 2009-09-17 Chilumula Ajaya K Programmble memory appratus, systems, and methods
US7768847B2 (en) 2008-04-09 2010-08-03 Rambus Inc. Programmable memory repair scheme
JP2010171210A (ja) * 2009-01-23 2010-08-05 Seiko Epson Corp 不揮発性記憶装置、集積回路装置及び電子機器
JP2010176746A (ja) * 2009-01-29 2010-08-12 Seiko Epson Corp 不揮発性記憶装置、集積回路装置及び電子機器
JP2010182389A (ja) * 2009-02-09 2010-08-19 Seiko Epson Corp 不揮発性記憶装置、集積回路装置及び電子機器
JP5337121B2 (ja) 2009-09-17 2013-11-06 株式会社東芝 不揮発性半導体記憶装置
KR101083681B1 (ko) 2010-07-02 2011-11-16 주식회사 하이닉스반도체 비휘발성 메모리 장치
US20120173921A1 (en) 2011-01-05 2012-07-05 Advanced Micro Devices, Inc. Redundancy memory storage system and a method for controlling a redundancy memory storage system

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