JP2016511502A5 - - Google Patents

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Publication number
JP2016511502A5
JP2016511502A5 JP2016501448A JP2016501448A JP2016511502A5 JP 2016511502 A5 JP2016511502 A5 JP 2016511502A5 JP 2016501448 A JP2016501448 A JP 2016501448A JP 2016501448 A JP2016501448 A JP 2016501448A JP 2016511502 A5 JP2016511502 A5 JP 2016511502A5
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JP
Japan
Prior art keywords
data
cell
state
voltage
reference voltage
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JP2016501448A
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English (en)
Japanese (ja)
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JP2016511502A (ja
JP6037491B2 (ja
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Priority claimed from US13/835,251 external-priority patent/US9390779B2/en
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JP2016501448A 2013-03-15 2014-03-12 メモリセルを検知するシステムおよび方法 Active JP6037491B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/835,251 2013-03-15
US13/835,251 US9390779B2 (en) 2013-03-15 2013-03-15 System and method of sensing a memory cell
PCT/US2014/024245 WO2014150791A2 (en) 2013-03-15 2014-03-12 System and method of sensing a memory cell

Publications (3)

Publication Number Publication Date
JP2016511502A JP2016511502A (ja) 2016-04-14
JP2016511502A5 true JP2016511502A5 (enExample) 2016-10-27
JP6037491B2 JP6037491B2 (ja) 2016-12-07

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JP2016501448A Active JP6037491B2 (ja) 2013-03-15 2014-03-12 メモリセルを検知するシステムおよび方法

Country Status (6)

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US (1) US9390779B2 (enExample)
EP (1) EP2973575B1 (enExample)
JP (1) JP6037491B2 (enExample)
KR (1) KR101669164B1 (enExample)
CN (1) CN105264607B (enExample)
WO (1) WO2014150791A2 (enExample)

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US9767875B2 (en) * 2015-08-11 2017-09-19 Nxp Usa, Inc. Capacitive sensing and reference voltage scheme for random access memory
US9502091B1 (en) * 2015-09-02 2016-11-22 Qualcomm Incorporated Sensing circuit for resistive memory cells
KR101704929B1 (ko) * 2015-10-26 2017-02-09 한양대학교 산학협력단 센싱 마진을 향상시키는 메모리 셀 읽기 회로
US9773537B2 (en) 2015-10-27 2017-09-26 Nxp Usa, Inc. Sense path circuitry suitable for magnetic tunnel junction memories
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US9659622B1 (en) * 2016-01-22 2017-05-23 Nxp Usa, Inc. Sense amplifier
US10170182B2 (en) 2016-03-16 2019-01-01 Imec Vzw Resistance change memory device configured for state evaluation based on reference cells
US9997242B2 (en) * 2016-10-14 2018-06-12 Arm Ltd. Method, system and device for non-volatile memory device state detection
US9779795B1 (en) * 2016-11-21 2017-10-03 Nxp Usa, Inc. Magnetic random access memory (MRAM) and method of operation
US10431278B2 (en) * 2017-08-14 2019-10-01 Qualcomm Incorporated Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for ambient temperature
US10510393B2 (en) 2017-09-15 2019-12-17 Samsung Electronics Co., Ltd Resistive memory device including reference cell and operating method thereof
CN109961811B (zh) * 2017-12-22 2021-04-06 中电海康集团有限公司 一种自旋转移力矩mram的读电路
DE102018103694B4 (de) 2018-02-20 2022-08-11 Infineon Technologies Ag Leseverstärker-Schaltkreis, Speichervorrichtung, Verfahren zum Ermitteln eines Zustandswerts einer resistiven Speicherzelle und Verfahren zum Betreiben einer Speichervorrichtung
US10854289B2 (en) 2018-05-14 2020-12-01 Samsung Electronics Co., Ltd. Resistive memory device providing reference calibration, and operating method thereof
US10891080B1 (en) * 2018-06-04 2021-01-12 Mentium Technologies Inc. Management of non-volatile memory arrays
CN110675906B (zh) * 2018-07-03 2021-10-08 华邦电子股份有限公司 电阻式随机存取存储单元的检测方法
US10734056B2 (en) * 2018-11-16 2020-08-04 Arm Limited Amplifier circuit devices and methods
DE102019102132B4 (de) * 2019-01-29 2020-08-06 Infineon Technologies Ag Schaltung mit Kondensatoren und entsprechendes Verfahren
US11031059B2 (en) * 2019-02-21 2021-06-08 Sandisk Technologies Llc Magnetic random-access memory with selector voltage compensation
CN110223725B (zh) * 2019-05-22 2022-03-22 北京航空航天大学 一种非易失性随机存储器数据读取电路、存储器及方法
TWI724895B (zh) * 2020-05-11 2021-04-11 力旺電子股份有限公司 具多階型記憶胞陣列之非揮發性記憶體及其相關編程控制方法
US11646079B2 (en) 2020-08-26 2023-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell including programmable resistors with transistor components
JPWO2023089959A1 (enExample) 2021-11-19 2023-05-25
US11881253B2 (en) * 2021-12-07 2024-01-23 Micron Technology, Inc. Average reference voltage for sensing memory
US12437787B2 (en) * 2022-12-27 2025-10-07 Micron Technology, Inc. Threshold compensated detector for memory sense
KR102852748B1 (ko) * 2024-10-31 2025-08-29 인천대학교 산학협력단 자기 랜덤 액세스 메모리용 오프셋 제거 방전 기반 감지 증폭기 및 그 제어 방법

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US7286429B1 (en) * 2006-04-24 2007-10-23 Taiwan Semiconductor Manufacturing Company, Ltd. High speed sensing amplifier for an MRAM cell
US7706201B2 (en) * 2007-07-16 2010-04-27 Qimonda Ag Integrated circuit with Resistivity changing memory cells and methods of operating the same
US7596045B2 (en) 2007-10-31 2009-09-29 International Business Machines Corporation Design structure for initializing reference cells of a toggle switched MRAM device
JP5288103B2 (ja) * 2008-04-03 2013-09-11 日本電気株式会社 磁気ランダムアクセスメモリ及びデータ読み出し方法
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US7881094B2 (en) 2008-11-12 2011-02-01 Seagate Technology Llc Voltage reference generation for resistive sense memory cells
US8154903B2 (en) * 2009-06-17 2012-04-10 Qualcomm Incorporated Split path sensing circuit
US8335101B2 (en) 2010-01-21 2012-12-18 Qualcomm Incorporated Resistance-based memory with reduced voltage input/output device
KR101095736B1 (ko) 2010-06-24 2011-12-21 주식회사 하이닉스반도체 비휘발성 메모리 장치
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