JP2015520908A5 - - Google Patents

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Publication number
JP2015520908A5
JP2015520908A5 JP2015510502A JP2015510502A JP2015520908A5 JP 2015520908 A5 JP2015520908 A5 JP 2015520908A5 JP 2015510502 A JP2015510502 A JP 2015510502A JP 2015510502 A JP2015510502 A JP 2015510502A JP 2015520908 A5 JP2015520908 A5 JP 2015520908A5
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JP
Japan
Prior art keywords
resistance
path
pair
mtj
circuit
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Application number
JP2015510502A
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English (en)
Japanese (ja)
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JP5908165B2 (ja
JP2015520908A (ja
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Priority claimed from US13/464,242 external-priority patent/US9159381B2/en
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Publication of JP2015520908A publication Critical patent/JP2015520908A/ja
Publication of JP2015520908A5 publication Critical patent/JP2015520908A5/ja
Application granted granted Critical
Publication of JP5908165B2 publication Critical patent/JP5908165B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2015510502A 2012-05-04 2013-05-06 半導体メモリ回路用の磁気トンネル接合要素を含む調整可能基準回路 Expired - Fee Related JP5908165B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/464,242 US9159381B2 (en) 2012-05-04 2012-05-04 Tunable reference circuit
US13/464,242 2012-05-04
PCT/US2013/039656 WO2013166479A1 (en) 2012-05-04 2013-05-06 A tunable reference circuit comprising magnetic tunnel junction elements for a semiconductor memory circuit

Publications (3)

Publication Number Publication Date
JP2015520908A JP2015520908A (ja) 2015-07-23
JP2015520908A5 true JP2015520908A5 (enExample) 2016-01-07
JP5908165B2 JP5908165B2 (ja) 2016-04-26

Family

ID=48521406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015510502A Expired - Fee Related JP5908165B2 (ja) 2012-05-04 2013-05-06 半導体メモリ回路用の磁気トンネル接合要素を含む調整可能基準回路

Country Status (6)

Country Link
US (1) US9159381B2 (enExample)
EP (1) EP2845197B1 (enExample)
JP (1) JP5908165B2 (enExample)
CN (1) CN104272391B (enExample)
IN (1) IN2014MN01960A (enExample)
WO (1) WO2013166479A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6191967B2 (ja) * 2012-06-11 2017-09-06 日本電気株式会社 不揮発性論理ゲート素子
US20140327508A1 (en) * 2013-05-06 2014-11-06 Qualcomm Incorporated Inductor tunable by a variable magnetic flux density component
US9336847B2 (en) 2014-04-21 2016-05-10 Qualcomm Incorporated Method and apparatus for generating a reference for use with a magnetic tunnel junction
US9691462B2 (en) 2014-09-27 2017-06-27 Qualcomm Incorporated Latch offset cancelation for magnetoresistive random access memory
JP2018147532A (ja) * 2017-03-03 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 半導体記憶装置及び情報処理装置
US10431278B2 (en) * 2017-08-14 2019-10-01 Qualcomm Incorporated Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for ambient temperature
US10790016B2 (en) * 2018-03-02 2020-09-29 Western Digital Technologies, Inc. Probabilistic neuron circuits
KR102097204B1 (ko) * 2018-05-04 2020-04-03 한양대학교 산학협력단 다중 기준 저항 레벨을 적용하는 자기 저항 메모리 소자 및 이에 있어서 최적 기준 저항 레벨을 선택하는 방법
CN110910924B (zh) * 2018-09-18 2021-09-14 联华电子股份有限公司 磁阻式随机存取存储器
US10803913B1 (en) * 2019-06-11 2020-10-13 Applied Materials, Inc. Narrow range sense amplifier with immunity to noise and variation
CN114078507A (zh) 2020-08-12 2022-02-22 三星电子株式会社 根据存储器单元的大小生成改善的写入电压的存储器设备
US11854590B2 (en) 2021-04-23 2023-12-26 Applied Materials, Inc. Reference generation for narrow-range sense amplifiers

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331943B1 (en) * 2000-08-28 2001-12-18 Motorola, Inc. MTJ MRAM series-parallel architecture
US6721203B1 (en) 2001-02-23 2004-04-13 Western Digital (Fremont), Inc. Designs of reference cells for magnetic tunnel junction (MTJ) MRAM
JP4113423B2 (ja) * 2002-12-04 2008-07-09 シャープ株式会社 半導体記憶装置及びリファレンスセルの補正方法
US6807118B2 (en) 2003-01-23 2004-10-19 Hewlett-Packard Development Company, L.P. Adjustable offset differential amplifier
JP4334284B2 (ja) * 2003-06-26 2009-09-30 株式会社東芝 磁気ランダムアクセスメモリ
US7239537B2 (en) 2005-01-12 2007-07-03 International Business Machines Corporation Method and apparatus for current sense amplifier calibration in MRAM devices
US7321507B2 (en) * 2005-11-21 2008-01-22 Magic Technologies, Inc. Reference cell scheme for MRAM
JP5044432B2 (ja) * 2008-02-07 2012-10-10 株式会社東芝 抵抗変化メモリ
JP5676842B2 (ja) * 2008-05-30 2015-02-25 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
US7813166B2 (en) 2008-06-30 2010-10-12 Qualcomm Incorporated Controlled value reference signal of resistance based memory circuit
US8203862B2 (en) 2008-10-10 2012-06-19 Seagate Technology Llc Voltage reference generation with selectable dummy regions
US7881094B2 (en) 2008-11-12 2011-02-01 Seagate Technology Llc Voltage reference generation for resistive sense memory cells
KR20100094167A (ko) 2009-02-18 2010-08-26 삼성전자주식회사 메모리 장치 및 이를 포함하는 모바일 장치
US8724414B2 (en) * 2010-02-09 2014-05-13 Qualcomm Incorporated System and method to select a reference cell
JP2012027974A (ja) 2010-07-22 2012-02-09 Panasonic Corp 半導体記憶装置

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