IN2014MN01960A - - Google Patents

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Publication number
IN2014MN01960A
IN2014MN01960A IN1960MUN2014A IN2014MN01960A IN 2014MN01960 A IN2014MN01960 A IN 2014MN01960A IN 1960MUN2014 A IN1960MUN2014 A IN 1960MUN2014A IN 2014MN01960 A IN2014MN01960 A IN 2014MN01960A
Authority
IN
India
Prior art keywords
path
mtj
resistance
circuit
reference pair
Prior art date
Application number
Inventor
Xia Li
Jung Pill Kim
Taehyun Kim
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of IN2014MN01960A publication Critical patent/IN2014MN01960A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

A circuit includes a first reference pair that includes a first path and a second path. The first path includes a first magnetic tunnel junction (MTJ) element and the second path includes a second MTJ element. The circuit further includes a second reference pair that includes a third path and a fourth path. The third path includes a third MTJ element and the fourth path includes a fourth MTJ element. The first reference pair and the second reference pair are tied together in parallel. A reference resistance of the circuit is based on a resistance of each of the first second third and fourth MTJ elements. The reference resistance of the circuit is adjustable by adjusting a resistance of one of the MTJ elements.
IN1960MUN2014 2012-05-04 2013-05-06 IN2014MN01960A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/464,242 US9159381B2 (en) 2012-05-04 2012-05-04 Tunable reference circuit
PCT/US2013/039656 WO2013166479A1 (en) 2012-05-04 2013-05-06 A tunable reference circuit comprising magnetic tunnel junction elements for a semiconductor memory circuit

Publications (1)

Publication Number Publication Date
IN2014MN01960A true IN2014MN01960A (en) 2015-07-10

Family

ID=48521406

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1960MUN2014 IN2014MN01960A (en) 2012-05-04 2013-05-06

Country Status (6)

Country Link
US (1) US9159381B2 (en)
EP (1) EP2845197B1 (en)
JP (1) JP5908165B2 (en)
CN (1) CN104272391B (en)
IN (1) IN2014MN01960A (en)
WO (1) WO2013166479A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6191967B2 (en) * 2012-06-11 2017-09-06 日本電気株式会社 Nonvolatile logic gate device
US20140327508A1 (en) * 2013-05-06 2014-11-06 Qualcomm Incorporated Inductor tunable by a variable magnetic flux density component
US9336847B2 (en) 2014-04-21 2016-05-10 Qualcomm Incorporated Method and apparatus for generating a reference for use with a magnetic tunnel junction
US9691462B2 (en) * 2014-09-27 2017-06-27 Qualcomm Incorporated Latch offset cancelation for magnetoresistive random access memory
JP2018147532A (en) * 2017-03-03 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 Semiconductor memory device and information processing device
US10431278B2 (en) * 2017-08-14 2019-10-01 Qualcomm Incorporated Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for ambient temperature
US10790016B2 (en) * 2018-03-02 2020-09-29 Western Digital Technologies, Inc. Probabilistic neuron circuits
KR102097204B1 (en) * 2018-05-04 2020-04-03 한양대학교 산학협력단 Magnetoresistive memory device using multiple reference resistance levels and method of selecting optimal reference resistance level in the same
CN110910924B (en) * 2018-09-18 2021-09-14 联华电子股份有限公司 Magnetoresistive random access memory
US10803913B1 (en) * 2019-06-11 2020-10-13 Applied Materials, Inc. Narrow range sense amplifier with immunity to noise and variation
KR20220021075A (en) 2020-08-12 2022-02-22 삼성전자주식회사 Memory device which generates optimal program voltage according to size of memory cell
US11854590B2 (en) 2021-04-23 2023-12-26 Applied Materials, Inc. Reference generation for narrow-range sense amplifiers

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331943B1 (en) * 2000-08-28 2001-12-18 Motorola, Inc. MTJ MRAM series-parallel architecture
US6721203B1 (en) 2001-02-23 2004-04-13 Western Digital (Fremont), Inc. Designs of reference cells for magnetic tunnel junction (MTJ) MRAM
JP4113423B2 (en) * 2002-12-04 2008-07-09 シャープ株式会社 Semiconductor memory device and reference cell correction method
US6807118B2 (en) 2003-01-23 2004-10-19 Hewlett-Packard Development Company, L.P. Adjustable offset differential amplifier
JP4334284B2 (en) * 2003-06-26 2009-09-30 株式会社東芝 Magnetic random access memory
US7239537B2 (en) 2005-01-12 2007-07-03 International Business Machines Corporation Method and apparatus for current sense amplifier calibration in MRAM devices
US7321507B2 (en) * 2005-11-21 2008-01-22 Magic Technologies, Inc. Reference cell scheme for MRAM
JP5044432B2 (en) * 2008-02-07 2012-10-10 株式会社東芝 Resistance change memory
JP5676842B2 (en) * 2008-05-30 2015-02-25 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． Semiconductor device
US7813166B2 (en) 2008-06-30 2010-10-12 Qualcomm Incorporated Controlled value reference signal of resistance based memory circuit
US8203862B2 (en) 2008-10-10 2012-06-19 Seagate Technology Llc Voltage reference generation with selectable dummy regions
US7881094B2 (en) 2008-11-12 2011-02-01 Seagate Technology Llc Voltage reference generation for resistive sense memory cells
KR20100094167A (en) 2009-02-18 2010-08-26 삼성전자주식회사 Memory device and mobile device including the same
US8724414B2 (en) * 2010-02-09 2014-05-13 Qualcomm Incorporated System and method to select a reference cell
JP2012027974A (en) 2010-07-22 2012-02-09 Panasonic Corp Semiconductor memory device

Also Published As

Publication number Publication date
JP2015520908A (en) 2015-07-23
CN104272391A (en) 2015-01-07
WO2013166479A1 (en) 2013-11-07
EP2845197A1 (en) 2015-03-11
US9159381B2 (en) 2015-10-13
JP5908165B2 (en) 2016-04-26
CN104272391B (en) 2018-04-27
EP2845197B1 (en) 2018-06-13
US20130293286A1 (en) 2013-11-07

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