CN104272391B - 包括用于半导体存储器电路的磁性隧道结元件的可调谐参考电路 - Google Patents

包括用于半导体存储器电路的磁性隧道结元件的可调谐参考电路 Download PDF

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Publication number
CN104272391B
CN104272391B CN201380023029.5A CN201380023029A CN104272391B CN 104272391 B CN104272391 B CN 104272391B CN 201380023029 A CN201380023029 A CN 201380023029A CN 104272391 B CN104272391 B CN 104272391B
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CN
China
Prior art keywords
resistance
path
pair
mtj
circuit
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Expired - Fee Related
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CN201380023029.5A
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English (en)
Chinese (zh)
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CN104272391A (zh
Inventor
X·李
J·P·金
T·金
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN201380023029.5A 2012-05-04 2013-05-06 包括用于半导体存储器电路的磁性隧道结元件的可调谐参考电路 Expired - Fee Related CN104272391B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/464,242 2012-05-04
US13/464,242 US9159381B2 (en) 2012-05-04 2012-05-04 Tunable reference circuit
PCT/US2013/039656 WO2013166479A1 (en) 2012-05-04 2013-05-06 A tunable reference circuit comprising magnetic tunnel junction elements for a semiconductor memory circuit

Publications (2)

Publication Number Publication Date
CN104272391A CN104272391A (zh) 2015-01-07
CN104272391B true CN104272391B (zh) 2018-04-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380023029.5A Expired - Fee Related CN104272391B (zh) 2012-05-04 2013-05-06 包括用于半导体存储器电路的磁性隧道结元件的可调谐参考电路

Country Status (6)

Country Link
US (1) US9159381B2 (enExample)
EP (1) EP2845197B1 (enExample)
JP (1) JP5908165B2 (enExample)
CN (1) CN104272391B (enExample)
IN (1) IN2014MN01960A (enExample)
WO (1) WO2013166479A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
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US9536584B2 (en) * 2012-06-11 2017-01-03 Nec Corporation Nonvolatile logic gate device
US20140327508A1 (en) * 2013-05-06 2014-11-06 Qualcomm Incorporated Inductor tunable by a variable magnetic flux density component
US9336847B2 (en) 2014-04-21 2016-05-10 Qualcomm Incorporated Method and apparatus for generating a reference for use with a magnetic tunnel junction
US9691462B2 (en) * 2014-09-27 2017-06-27 Qualcomm Incorporated Latch offset cancelation for magnetoresistive random access memory
JP2018147532A (ja) * 2017-03-03 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 半導体記憶装置及び情報処理装置
US10431278B2 (en) * 2017-08-14 2019-10-01 Qualcomm Incorporated Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for ambient temperature
US10790016B2 (en) * 2018-03-02 2020-09-29 Western Digital Technologies, Inc. Probabilistic neuron circuits
KR102097204B1 (ko) * 2018-05-04 2020-04-03 한양대학교 산학협력단 다중 기준 저항 레벨을 적용하는 자기 저항 메모리 소자 및 이에 있어서 최적 기준 저항 레벨을 선택하는 방법
CN110910924B (zh) * 2018-09-18 2021-09-14 联华电子股份有限公司 磁阻式随机存取存储器
US10803913B1 (en) * 2019-06-11 2020-10-13 Applied Materials, Inc. Narrow range sense amplifier with immunity to noise and variation
KR102901380B1 (ko) 2020-08-12 2025-12-19 삼성전자주식회사 메모리 셀의 크기에 따른 최적의 프로그램 전압을 생성하는 메모리 장치
US11854590B2 (en) 2021-04-23 2023-12-26 Applied Materials, Inc. Reference generation for narrow-range sense amplifiers

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1524269A (zh) * 2000-08-28 2004-08-25 Ħ��������˾ Mtj mram串并行体系结构
US20080094884A1 (en) * 2005-11-21 2008-04-24 Maglc Technologies, Inc. Reference cell scheme for MRAM
US20090201717A1 (en) * 2008-02-07 2009-08-13 Kabushiki Kaisha Toshiba Resistance-change memory
US20110194333A1 (en) * 2010-02-09 2011-08-11 Qualcomm Incorporated System and Method to Select a Reference Cell

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6721203B1 (en) 2001-02-23 2004-04-13 Western Digital (Fremont), Inc. Designs of reference cells for magnetic tunnel junction (MTJ) MRAM
JP4113423B2 (ja) * 2002-12-04 2008-07-09 シャープ株式会社 半導体記憶装置及びリファレンスセルの補正方法
US6807118B2 (en) 2003-01-23 2004-10-19 Hewlett-Packard Development Company, L.P. Adjustable offset differential amplifier
JP4334284B2 (ja) * 2003-06-26 2009-09-30 株式会社東芝 磁気ランダムアクセスメモリ
US7239537B2 (en) 2005-01-12 2007-07-03 International Business Machines Corporation Method and apparatus for current sense amplifier calibration in MRAM devices
JP5676842B2 (ja) * 2008-05-30 2015-02-25 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
US7813166B2 (en) 2008-06-30 2010-10-12 Qualcomm Incorporated Controlled value reference signal of resistance based memory circuit
US8203862B2 (en) 2008-10-10 2012-06-19 Seagate Technology Llc Voltage reference generation with selectable dummy regions
US7881094B2 (en) 2008-11-12 2011-02-01 Seagate Technology Llc Voltage reference generation for resistive sense memory cells
KR20100094167A (ko) 2009-02-18 2010-08-26 삼성전자주식회사 메모리 장치 및 이를 포함하는 모바일 장치
JP2012027974A (ja) 2010-07-22 2012-02-09 Panasonic Corp 半導体記憶装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1524269A (zh) * 2000-08-28 2004-08-25 Ħ��������˾ Mtj mram串并行体系结构
US20080094884A1 (en) * 2005-11-21 2008-04-24 Maglc Technologies, Inc. Reference cell scheme for MRAM
US20090201717A1 (en) * 2008-02-07 2009-08-13 Kabushiki Kaisha Toshiba Resistance-change memory
US20110194333A1 (en) * 2010-02-09 2011-08-11 Qualcomm Incorporated System and Method to Select a Reference Cell

Also Published As

Publication number Publication date
WO2013166479A1 (en) 2013-11-07
EP2845197A1 (en) 2015-03-11
CN104272391A (zh) 2015-01-07
JP5908165B2 (ja) 2016-04-26
US9159381B2 (en) 2015-10-13
JP2015520908A (ja) 2015-07-23
US20130293286A1 (en) 2013-11-07
IN2014MN01960A (enExample) 2015-07-10
EP2845197B1 (en) 2018-06-13

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Granted publication date: 20180427

Termination date: 20210506