JP2015534204A5 - - Google Patents

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Publication number
JP2015534204A5
JP2015534204A5 JP2015532107A JP2015532107A JP2015534204A5 JP 2015534204 A5 JP2015534204 A5 JP 2015534204A5 JP 2015532107 A JP2015532107 A JP 2015532107A JP 2015532107 A JP2015532107 A JP 2015532107A JP 2015534204 A5 JP2015534204 A5 JP 2015534204A5
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JP
Japan
Prior art keywords
tunnel junction
magnetic tunnel
sense amplifier
unit cell
memory array
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Application number
JP2015532107A
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English (en)
Japanese (ja)
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JP2015534204A (ja
JP5944589B2 (ja
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Priority claimed from US13/613,125 external-priority patent/US9165631B2/en
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Publication of JP2015534204A publication Critical patent/JP2015534204A/ja
Publication of JP2015534204A5 publication Critical patent/JP2015534204A5/ja
Application granted granted Critical
Publication of JP5944589B2 publication Critical patent/JP5944589B2/ja
Expired - Fee Related legal-status Critical Current
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JP2015532107A 2012-09-13 2013-09-13 セル内に複数の磁気トンネル接合デバイスを備えたｏｔｐスキーム Expired - Fee Related JP5944589B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/613,125 2012-09-13
US13/613,125 US9165631B2 (en) 2012-09-13 2012-09-13 OTP scheme with multiple magnetic tunnel junction devices in a cell
PCT/US2013/059809 WO2014043575A1 (en) 2012-09-13 2013-09-13 Otp scheme with multiple magnetic tunnel junction devices in a cell

Publications (3)

Publication Number Publication Date
JP2015534204A JP2015534204A (ja) 2015-11-26
JP2015534204A5 true JP2015534204A5 (enExample) 2016-01-28
JP5944589B2 JP5944589B2 (ja) 2016-07-05

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ID=49274866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015532107A Expired - Fee Related JP5944589B2 (ja) 2012-09-13 2013-09-13 セル内に複数の磁気トンネル接合デバイスを備えたｏｔｐスキーム

Country Status (4)

Country Link
US (1) US9165631B2 (enExample)
JP (1) JP5944589B2 (enExample)
CN (1) CN104620319B (enExample)
WO (1) WO2014043575A1 (enExample)

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US8547736B2 (en) * 2010-08-03 2013-10-01 Qualcomm Incorporated Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
US9524765B2 (en) * 2014-08-15 2016-12-20 Qualcomm Incorporated Differential magnetic tunnel junction pair including a sense layer with a high coercivity portion
US9489999B2 (en) 2014-11-26 2016-11-08 Qualcomm Incorporated Magnetic tunnel junction resistance comparison based physical unclonable function
US9529660B2 (en) 2015-03-03 2016-12-27 Intel Corporation Apparatus and method for detecting single flip-error in a complementary resistive memory
US9373395B1 (en) * 2015-03-04 2016-06-21 Intel Corporation Apparatus to reduce retention failure in complementary resistive memory
US9805816B2 (en) * 2015-04-03 2017-10-31 Headway Technologies, Inc. Implementation of a one time programmable memory using a MRAM stack design
CN104835530B (zh) * 2015-06-05 2018-08-03 武汉新芯集成电路制造有限公司 一种电子熔丝结构电路
US9852805B2 (en) * 2015-06-25 2017-12-26 Kilopass Technology, Inc. Write enhancement for one time programmable (OTP) semiconductors
US10181357B2 (en) * 2015-08-18 2019-01-15 Ememory Technology Inc. Code generating apparatus and one time programming block
US9715916B1 (en) * 2016-03-24 2017-07-25 Intel Corporation Supply-switched dual cell memory bitcell
CN106128496A (zh) * 2016-06-16 2016-11-16 中电海康集团有限公司 一种基于电容机构的一次性可编程器件及编程实现方法
CN106128497A (zh) * 2016-06-16 2016-11-16 中电海康集团有限公司 一种带有读出电路的一次性可编程器件及数据读取方法
CN106128495A (zh) * 2016-06-16 2016-11-16 中电海康集团有限公司 一种一次性可编程器件及编程实现方法
CN107767906A (zh) * 2016-08-23 2018-03-06 中电海康集团有限公司 一种磁性随机存储器
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US9922723B1 (en) 2017-01-17 2018-03-20 Nxp Usa, Inc. Volatile latch circuit with tamper resistant non-volatile latch backup
JP2018148159A (ja) 2017-03-09 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 磁気メモリ、磁気メモリの記録方法及び磁気メモリの読み出し方法
US10855287B2 (en) 2018-02-20 2020-12-01 United States Of America, As Represented By The Secretary Of The Navy Non-volatile multiple time programmable integrated circuit system with selective conversion to one time programmable or permanent configuration bit programming capabilities and related methods
US11133044B2 (en) * 2018-06-01 2021-09-28 Taiwan Semiconductor Manufacturing Company, Ltd. Interleaved routing for MRAM cell selection
US10878928B2 (en) * 2018-09-21 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. One-time-programmable (OTP) implementation using magnetic junctions
US10699764B1 (en) * 2018-12-14 2020-06-30 Nxp Usa, Inc. MRAM memory with OTP cells
JP2020155727A (ja) 2019-03-22 2020-09-24 ソニーセミコンダクタソリューションズ株式会社 半導体装置及びこれを備えた電子機器
US11264991B2 (en) 2019-11-26 2022-03-01 The Trustees Of Indiana University Field-programmable gate array with updatable security schemes
US10861524B1 (en) * 2019-12-11 2020-12-08 Nxp Usa, Inc. Magnetoresistive random access memory (MRAM) with OTP cells
US11049539B1 (en) 2020-04-29 2021-06-29 Nxp Usa, Inc. Magnetoresistive random access memory (MRAM) with OTP cells
US12035540B2 (en) 2020-07-23 2024-07-09 Samsung Electronics Co., Ltd. Magnetic memory device
US12424293B2 (en) 2023-03-23 2025-09-23 SanDisk Technologies, Inc. One-time programmable memory devices and methods

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US7577020B2 (en) 2007-10-01 2009-08-18 Shine Chung System and method for reading multiple magnetic tunnel junctions with a single select transistor
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US8547736B2 (en) * 2010-08-03 2013-10-01 Qualcomm Incorporated Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
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