JP2015504594A5 - - Google Patents

Download PDF

Info

Publication number
JP2015504594A5
JP2015504594A5 JP2014540095A JP2014540095A JP2015504594A5 JP 2015504594 A5 JP2015504594 A5 JP 2015504594A5 JP 2014540095 A JP2014540095 A JP 2014540095A JP 2014540095 A JP2014540095 A JP 2014540095A JP 2015504594 A5 JP2015504594 A5 JP 2015504594A5
Authority
JP
Japan
Prior art keywords
switch
power supply
circuit
input
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014540095A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015504594A (ja
JP5823631B2 (ja
Filing date
Publication date
Priority claimed from US13/286,498 external-priority patent/US8988839B2/en
Application filed filed Critical
Publication of JP2015504594A publication Critical patent/JP2015504594A/ja
Publication of JP2015504594A5 publication Critical patent/JP2015504594A5/ja
Application granted granted Critical
Publication of JP5823631B2 publication Critical patent/JP5823631B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014540095A 2011-11-01 2012-11-01 埋込型静電気放電（ｅｓｄ）保護および適応ボディバイアスを用いるブロック電源スイッチ Expired - Fee Related JP5823631B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/286,498 2011-11-01
US13/286,498 US8988839B2 (en) 2011-11-01 2011-11-01 Block power switch with embedded electrostatic discharge (ESD) protection and adaptive body biasing
PCT/US2012/063095 WO2013067205A1 (en) 2011-11-01 2012-11-01 Block power switch with embedded electrostatic discharge (esd) protection and adaptive body biasing

Publications (3)

Publication Number Publication Date
JP2015504594A JP2015504594A (ja) 2015-02-12
JP2015504594A5 true JP2015504594A5 (enExample) 2015-06-18
JP5823631B2 JP5823631B2 (ja) 2015-11-25

Family

ID=47436167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014540095A Expired - Fee Related JP5823631B2 (ja) 2011-11-01 2012-11-01 埋込型静電気放電（ｅｓｄ）保護および適応ボディバイアスを用いるブロック電源スイッチ

Country Status (8)

Country Link
US (1) US8988839B2 (enExample)
EP (1) EP2774179B1 (enExample)
JP (1) JP5823631B2 (enExample)
KR (1) KR101516303B1 (enExample)
CN (1) CN103907186B (enExample)
ES (1) ES2814350T3 (enExample)
IN (1) IN2014CN02460A (enExample)
WO (1) WO2013067205A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9300352B2 (en) * 2013-01-30 2016-03-29 Broadcom Corporation Transceiver with board-level configuration of on-chip or external transmit/receive switch
US9466599B2 (en) * 2013-09-18 2016-10-11 Nxp B.V. Static current in IO for ultra-low power applications
US9647551B2 (en) 2015-08-14 2017-05-09 Qualcomm Incorporated Switched power control circuits for controlling the rate of providing voltages to powered circuits, and related systems and methods
KR20170052751A (ko) * 2015-11-03 2017-05-15 삼성전자주식회사 반도체 장치에서의 통합 보호회로
US10262829B2 (en) 2015-12-14 2019-04-16 General Electric Company Protection circuit assembly and method for high voltage systems
US10277268B2 (en) * 2017-06-02 2019-04-30 Psemi Corporation Method and apparatus for switching of shunt and through switches of a transceiver
TWI695559B (zh) * 2018-12-20 2020-06-01 大陸商北京集創北方科技股份有限公司 靜電放電防護電路、感測裝置及電子裝置
US10979049B2 (en) * 2019-05-03 2021-04-13 Taiwan Semiconductor Manufacturing Company Ltd. Logic buffer circuit and method
DE102020104129A1 (de) * 2019-05-03 2020-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Logikpufferschaltung und verfahren
US20250246900A1 (en) * 2024-01-31 2025-07-31 Qualcomm Incorporated Low leakage esd structure suitable for high impedance i/o pins

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH023272A (ja) * 1988-06-20 1990-01-08 Oki Electric Ind Co Ltd 過電流保護機能付き半導体集積回路
JP2000323688A (ja) * 1999-05-07 2000-11-24 Nec Ic Microcomput Syst Ltd 半導体集積回路装置
US6236250B1 (en) * 1999-11-10 2001-05-22 Intel Corporation Circuit for independent power-up sequencing of a multi-voltage chip
JP3899984B2 (ja) * 2002-04-09 2007-03-28 富士電機デバイステクノロジー株式会社 過電圧保護回路
TW563298B (en) * 2002-05-29 2003-11-21 Ind Tech Res Inst Latchup protection circuit for integrated circuits on chip
TW536803B (en) * 2002-06-19 2003-06-11 Macronix Int Co Ltd Gate equivalent potential circuit and method for input/output electrostatic discharge protection
US7092307B2 (en) * 2003-04-02 2006-08-15 Qualcomm Inc. Leakage current reduction for CMOS memory circuits
KR100761358B1 (ko) * 2004-06-03 2007-09-27 주식회사 하이닉스반도체 반도체 기억 소자 및 그의 내부 전압 조절 방법
JP4647294B2 (ja) * 2004-11-26 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
JP2006311507A (ja) * 2005-03-28 2006-11-09 Matsushita Electric Ind Co Ltd 電源スイッチ回路
TWI278093B (en) 2005-07-15 2007-04-01 Novatek Microelectronics Corp Level shifter ESD protection circuit with power-on-sequence consideration
EP1927174B1 (en) 2005-09-19 2013-03-06 The Regents of The University of California Esd protection circuits
US7477495B2 (en) 2005-12-13 2009-01-13 Silicon Laboratories, Inc. System and method of ESD protection of integrated circuit components
CN100561818C (zh) * 2006-04-27 2009-11-18 北京中星微电子有限公司 一种抗击电源电压突变的保护电路
JP4723443B2 (ja) * 2006-09-13 2011-07-13 Ｏｋｉセミコンダクタ株式会社 半導体集積回路
JP2009076664A (ja) * 2007-09-20 2009-04-09 Fujitsu Ltd 静電気放電保護回路
JP4516102B2 (ja) * 2007-09-26 2010-08-04 株式会社東芝 Ｅｓｄ保護回路
JP2009206506A (ja) * 2008-01-31 2009-09-10 Sanyo Electric Co Ltd 素子搭載用基板およびその製造方法、半導体モジュールおよびこれを搭載した携帯機器
JP5388632B2 (ja) 2008-03-14 2014-01-15 株式会社半導体エネルギー研究所 半導体装置
US7826188B2 (en) * 2008-06-17 2010-11-02 International Business Machines Corporation Methods, design structures, and systems for current mode logic (CML) differential driver ESD protection circuitry
JP2010003982A (ja) * 2008-06-23 2010-01-07 Fujitsu Ltd 電気回路
GB2464771B (en) * 2008-10-31 2013-11-20 Cambridge Silicon Radio Ltd Low voltage protection
KR20110002167A (ko) * 2009-07-01 2011-01-07 주식회사 동부하이텍 Ｅｓｄ 보호 회로
US8339757B2 (en) 2010-04-19 2012-12-25 Faraday Technology Corp. Electrostatic discharge circuit for integrated circuit with multiple power domain
US8400743B2 (en) * 2010-06-30 2013-03-19 Advanced Micro Devices, Inc. Electrostatic discharge circuit
JP5338840B2 (ja) * 2011-04-01 2013-11-13 日本テキサス・インスツルメンツ株式会社 半導体集積回路
US8742827B2 (en) * 2011-05-24 2014-06-03 Arm Limited Power gating circuit

Similar Documents

Publication Publication Date Title
JP2015504594A5 (enExample)
TWI505083B (zh) 電源控制電路及具有該電源控制電路的電子裝置
JP2019517127A5 (enExample)
US8248147B2 (en) Power switch circuit for single power supply
JP2011181905A5 (enExample)
ES2883349T3 (es) Circuitos de entrada/salida aislados de descarga electrostática y método para proteger dichos circuitos
US8242637B2 (en) Power source switching circuit
US20150263505A1 (en) Output circuit
JP2015532534A5 (enExample)
WO2015131335A1 (zh) 一种充电电路和终端
EP2973703B1 (en) Devices and methods for calibrating and operating a snapback clamp circuit
CN106662903A (zh) 使用开关的供电电压节点耦合
US9054520B2 (en) ESD clamping transistor with switchable clamping modes of operation
JP2019516280A5 (enExample)
US20160079747A1 (en) Back power protection circuit
US20130313914A1 (en) Control circuit for universal serial bus connector
US20130235493A1 (en) Protection circuit and power management circuit and electronic device
US9083176B2 (en) Electrostatic discharge clamp with disable
TW201528873A (zh) 閃光ｌｅｄ驅動器放電控制
US9312686B2 (en) High voltage protection circuit for non-tolerant integrated circuit
US20140347775A1 (en) Battery protection circuit
TW201507333A (zh) 靜電放電防護電路
TW201519558A (zh) 可攜式電子裝置及其重置單元
US9627901B2 (en) Charging circuit
CN114336531B (zh) 漏电保护电路和电子设备