JP2017501524A5 - - Google Patents

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Publication number
JP2017501524A5
JP2017501524A5 JP2016544505A JP2016544505A JP2017501524A5 JP 2017501524 A5 JP2017501524 A5 JP 2017501524A5 JP 2016544505 A JP2016544505 A JP 2016544505A JP 2016544505 A JP2016544505 A JP 2016544505A JP 2017501524 A5 JP2017501524 A5 JP 2017501524A5
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JP
Japan
Prior art keywords
inverter
input
bit cell
resistive memory
differential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2016544505A
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English (en)
Japanese (ja)
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JP2017501524A (ja
Filing date
Publication date
Priority claimed from US14/165,702 external-priority patent/US9087579B1/en
Application filed filed Critical
Publication of JP2017501524A publication Critical patent/JP2017501524A/ja
Publication of JP2017501524A5 publication Critical patent/JP2017501524A5/ja
Ceased legal-status Critical Current

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JP2016544505A 2014-01-06 2015-01-05 電流逆注入を防ぐために状態検知中に抵抗性メモリ検知入力を減結合するための制御回路を用いるセンス増幅器及び関連する方法並びにシステム Ceased JP2017501524A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461923887P 2014-01-06 2014-01-06
US61/923,887 2014-01-06
US14/165,702 2014-01-28
US14/165,702 US9087579B1 (en) 2014-01-06 2014-01-28 Sense amplifiers employing control circuitry for decoupling resistive memory sense inputs during state sensing to prevent current back injection, and related methods and systems
PCT/US2015/010108 WO2015103516A1 (en) 2014-01-06 2015-01-05 Sense amplifier employing control circuitry for decoupling resistive memory sense inputs during state sensing to prevent current back injection, and related methods and systems

Publications (2)

Publication Number Publication Date
JP2017501524A JP2017501524A (ja) 2017-01-12
JP2017501524A5 true JP2017501524A5 (enExample) 2018-01-25

Family

ID=52355273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016544505A Ceased JP2017501524A (ja) 2014-01-06 2015-01-05 電流逆注入を防ぐために状態検知中に抵抗性メモリ検知入力を減結合するための制御回路を用いるセンス増幅器及び関連する方法並びにシステム

Country Status (5)

Country Link
US (1) US9087579B1 (enExample)
EP (1) EP3092645B1 (enExample)
JP (1) JP2017501524A (enExample)
CN (1) CN105900177B (enExample)
WO (1) WO2015103516A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9601165B1 (en) 2015-09-24 2017-03-21 Intel IP Corporation Sense amplifier
CN105261393B (zh) * 2015-11-16 2018-05-08 西安紫光国芯半导体有限公司 一种基于阻变存储单元rram的存储电路
CN105261392A (zh) * 2015-11-16 2016-01-20 西安华芯半导体有限公司 一种基于阻变存储单元rram的存储单元及存储方法
KR102388605B1 (ko) * 2015-12-01 2022-04-21 에스케이하이닉스 주식회사 메모리 및 이를 포함하는 전자 장치
US9698765B1 (en) * 2016-02-22 2017-07-04 Stmicroelectronics S.R.L. Dynamic sense amplifier with offset compensation
US10430534B2 (en) * 2016-11-30 2019-10-01 Numem Inc. Resistance-based memory compiler
WO2019073333A1 (ja) * 2017-10-13 2019-04-18 株式会社半導体エネルギー研究所 記憶装置、電子部品、及び電子機器
CN109493906A (zh) * 2018-12-19 2019-03-19 珠海博雅科技有限公司 一种差分快速读取电路、存储芯片及存储器
CN110060724B (zh) * 2019-04-09 2021-01-01 江苏东海半导体科技有限公司 一种掩膜存储器的读出结构
CN111863055B (zh) * 2020-08-13 2022-10-28 安徽大学 灵敏放大器、存储器和灵敏放大器的控制方法
US11887655B2 (en) 2020-08-13 2024-01-30 Anhui University Sense amplifier, memory, and method for controlling sense amplifier by configuring structures using switches
US11929111B2 (en) 2020-09-01 2024-03-12 Anhui University Sense amplifier, memory and method for controlling sense amplifier
US11862285B2 (en) 2020-09-01 2024-01-02 Anhui University Sense amplifier, memory and control method of sense amplifier
US11328759B2 (en) * 2020-10-02 2022-05-10 Sandisk Technologies Llc Signal preserve in MRAM during reading
US11386945B2 (en) * 2020-10-02 2022-07-12 Sandisk Technologies Llc Signal amplification in MRAM during reading, including a pair of complementary transistors connected to an array line

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6126994A (ja) * 1984-07-16 1986-02-06 Matsushita Electric Ind Co Ltd 半導体メモリ
CA1340340C (en) * 1987-06-02 1999-01-26 Joseph T. Evans, Jr. Non-volatile memory circuit using ferroelectric capacitor storage element
US6052321A (en) * 1997-04-16 2000-04-18 Micron Technology, Inc. Circuit and method for performing test on memory array cells using external sense amplifier reference current
US6741104B2 (en) 1999-05-26 2004-05-25 Micron Technology, Inc. DRAM sense amplifier for low voltages
US6208186B1 (en) 1999-09-09 2001-03-27 Intel Corporation Differential signal generator
JP3920565B2 (ja) * 2000-12-26 2007-05-30 株式会社東芝 磁気ランダムアクセスメモリ
US6531371B2 (en) 2001-06-28 2003-03-11 Sharp Laboratories Of America, Inc. Electrically programmable resistance cross point memory
JP4141758B2 (ja) * 2002-07-25 2008-08-27 日本テキサス・インスツルメンツ株式会社 半導体記憶装置
US6873559B2 (en) 2003-01-13 2005-03-29 Micron Technology, Inc. Method and apparatus for enhanced sensing of low voltage memory
TW200527656A (en) * 2004-02-05 2005-08-16 Renesas Tech Corp Semiconductor device
DE102004058131B4 (de) * 2004-12-02 2011-06-01 Qimonda Ag Verfahren und Schaltung zum Auslesen einer dynamischen Speicherschaltung
JP2006185477A (ja) * 2004-12-27 2006-07-13 Fujitsu Ltd 磁気メモリ装置並びにその読み出し方法及び書き込み方法
US8270193B2 (en) 2010-01-29 2012-09-18 Unity Semiconductor Corporation Local bit lines and methods of selecting the same to access memory elements in cross-point arrays
JP5400262B2 (ja) 2005-12-28 2014-01-29 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
US20080074914A1 (en) 2006-09-21 2008-03-27 Memocom Corp. Memory devices with sense amplifiers
DE602007007433D1 (de) 2007-04-06 2010-08-12 St Microelectronics Des & Appl Verstärker mit Ausgangsschutz, insbesondere Operationsverstärker für Audioanwendung
WO2008142732A1 (ja) 2007-05-18 2008-11-27 Fujitsu Microelectronics Limited 半導体メモリ
JP2009123272A (ja) 2007-11-14 2009-06-04 Nec Electronics Corp 半導体記憶装置及び制御方法
US7593265B2 (en) 2007-12-28 2009-09-22 Sandisk Corporation Low noise sense amplifier array and method for nonvolatile memory
US7869258B2 (en) 2008-06-27 2011-01-11 Sandisk 3D, Llc Reverse set with current limit for non-volatile storage
JP5410073B2 (ja) 2008-11-05 2014-02-05 ルネサスエレクトロニクス株式会社 半導体記憶装置及び半導体記憶装置の動作方法
US8159864B2 (en) * 2008-12-08 2012-04-17 Qualcomm Incorporated Data integrity preservation in spin transfer torque magnetoresistive random access memory
US9916904B2 (en) 2009-02-02 2018-03-13 Qualcomm Incorporated Reducing leakage current in a memory device
JP2010182353A (ja) * 2009-02-04 2010-08-19 Elpida Memory Inc 半導体記憶装置とその読み出し方法
JP5336887B2 (ja) 2009-03-05 2013-11-06 パナソニック株式会社 半導体集積回路
JP2012123875A (ja) * 2010-12-09 2012-06-28 Hitachi Ltd 半導体記憶装置

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