CN105900177B - 读出电阻式存储器比特单元的状态的方法和系统 - Google Patents

读出电阻式存储器比特单元的状态的方法和系统 Download PDF

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Publication number
CN105900177B
CN105900177B CN201580003618.6A CN201580003618A CN105900177B CN 105900177 B CN105900177 B CN 105900177B CN 201580003618 A CN201580003618 A CN 201580003618A CN 105900177 B CN105900177 B CN 105900177B
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CN
China
Prior art keywords
inverter
input
readout
sense amplifier
resistive memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201580003618.6A
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English (en)
Chinese (zh)
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CN105900177A (zh
Inventor
W·吴
V·纳拉亚南
K·H·L·阮
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Qualcomm Inc
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Qualcomm Inc
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Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0042—Read using differential sensing, e.g. bit line [BL] and bit line bar [BLB]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/002—Isolation gates, i.e. gates coupling bit lines to the sense amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
CN201580003618.6A 2014-01-06 2015-01-05 读出电阻式存储器比特单元的状态的方法和系统 Expired - Fee Related CN105900177B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461923887P 2014-01-06 2014-01-06
US61/923,887 2014-01-06
US14/165,702 2014-01-28
US14/165,702 US9087579B1 (en) 2014-01-06 2014-01-28 Sense amplifiers employing control circuitry for decoupling resistive memory sense inputs during state sensing to prevent current back injection, and related methods and systems
PCT/US2015/010108 WO2015103516A1 (en) 2014-01-06 2015-01-05 Sense amplifier employing control circuitry for decoupling resistive memory sense inputs during state sensing to prevent current back injection, and related methods and systems

Publications (2)

Publication Number Publication Date
CN105900177A CN105900177A (zh) 2016-08-24
CN105900177B true CN105900177B (zh) 2019-07-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580003618.6A Expired - Fee Related CN105900177B (zh) 2014-01-06 2015-01-05 读出电阻式存储器比特单元的状态的方法和系统

Country Status (5)

Country Link
US (1) US9087579B1 (enExample)
EP (1) EP3092645B1 (enExample)
JP (1) JP2017501524A (enExample)
CN (1) CN105900177B (enExample)
WO (1) WO2015103516A1 (enExample)

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CN105261393B (zh) * 2015-11-16 2018-05-08 西安紫光国芯半导体有限公司 一种基于阻变存储单元rram的存储电路
CN105261392A (zh) * 2015-11-16 2016-01-20 西安华芯半导体有限公司 一种基于阻变存储单元rram的存储单元及存储方法
KR102388605B1 (ko) * 2015-12-01 2022-04-21 에스케이하이닉스 주식회사 메모리 및 이를 포함하는 전자 장치
US9698765B1 (en) * 2016-02-22 2017-07-04 Stmicroelectronics S.R.L. Dynamic sense amplifier with offset compensation
US10430534B2 (en) * 2016-11-30 2019-10-01 Numem Inc. Resistance-based memory compiler
WO2019073333A1 (ja) * 2017-10-13 2019-04-18 株式会社半導体エネルギー研究所 記憶装置、電子部品、及び電子機器
CN109493906A (zh) * 2018-12-19 2019-03-19 珠海博雅科技有限公司 一种差分快速读取电路、存储芯片及存储器
CN110060724B (zh) * 2019-04-09 2021-01-01 江苏东海半导体科技有限公司 一种掩膜存储器的读出结构
CN111863055B (zh) * 2020-08-13 2022-10-28 安徽大学 灵敏放大器、存储器和灵敏放大器的控制方法
US11887655B2 (en) 2020-08-13 2024-01-30 Anhui University Sense amplifier, memory, and method for controlling sense amplifier by configuring structures using switches
US11929111B2 (en) 2020-09-01 2024-03-12 Anhui University Sense amplifier, memory and method for controlling sense amplifier
US11862285B2 (en) 2020-09-01 2024-01-02 Anhui University Sense amplifier, memory and control method of sense amplifier
US11328759B2 (en) * 2020-10-02 2022-05-10 Sandisk Technologies Llc Signal preserve in MRAM during reading
US11386945B2 (en) * 2020-10-02 2022-07-12 Sandisk Technologies Llc Signal amplification in MRAM during reading, including a pair of complementary transistors connected to an array line

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CN1815627A (zh) * 2004-12-02 2006-08-09 因芬尼昂技术股份公司 用于动态存储电路的读出的方法和电路
US20080074914A1 (en) * 2006-09-21 2008-03-27 Memocom Corp. Memory devices with sense amplifiers
US20090116309A1 (en) * 2005-12-28 2009-05-07 Hitachi, Ltd. Semiconductor device

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US20010043089A1 (en) * 1999-05-26 2001-11-22 Leonard Forbes Dram sense amplifier for low voltages
CN1362709A (zh) * 2000-12-26 2002-08-07 株式会社东芝 磁随机存取存储器
CN1815627A (zh) * 2004-12-02 2006-08-09 因芬尼昂技术股份公司 用于动态存储电路的读出的方法和电路
US20090116309A1 (en) * 2005-12-28 2009-05-07 Hitachi, Ltd. Semiconductor device
US20080074914A1 (en) * 2006-09-21 2008-03-27 Memocom Corp. Memory devices with sense amplifiers

Also Published As

Publication number Publication date
EP3092645B1 (en) 2018-08-01
US20150194209A1 (en) 2015-07-09
WO2015103516A1 (en) 2015-07-09
CN105900177A (zh) 2016-08-24
US9087579B1 (en) 2015-07-21
JP2017501524A (ja) 2017-01-12
EP3092645A1 (en) 2016-11-16

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