JP2013254945A5 - - Google Patents

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Publication number
JP2013254945A5
JP2013254945A5 JP2013098202A JP2013098202A JP2013254945A5 JP 2013254945 A5 JP2013254945 A5 JP 2013254945A5 JP 2013098202 A JP2013098202 A JP 2013098202A JP 2013098202 A JP2013098202 A JP 2013098202A JP 2013254945 A5 JP2013254945 A5 JP 2013254945A5
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JP
Japan
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data holding
holding unit
electrically connected
data
transistor
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JP2013098202A
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English (en)
Japanese (ja)
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JP6174899B2 (ja
JP2013254945A (ja
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Priority claimed from JP2013098202A external-priority patent/JP6174899B2/ja
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Publication of JP2013254945A5 publication Critical patent/JP2013254945A5/ja
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Publication of JP6174899B2 publication Critical patent/JP6174899B2/ja
Expired - Fee Related legal-status Critical Current
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JP2013098202A 2012-05-11 2013-05-08 半導体装置 Expired - Fee Related JP6174899B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013098202A JP6174899B2 (ja) 2012-05-11 2013-05-08 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012109286 2012-05-11
JP2012109286 2012-05-11
JP2013098202A JP6174899B2 (ja) 2012-05-11 2013-05-08 半導体装置

Publications (3)

Publication Number Publication Date
JP2013254945A JP2013254945A (ja) 2013-12-19
JP2013254945A5 true JP2013254945A5 (enExample) 2016-06-16
JP6174899B2 JP6174899B2 (ja) 2017-08-02

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ID=49548479

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JP2013098202A Expired - Fee Related JP6174899B2 (ja) 2012-05-11 2013-05-08 半導体装置

Country Status (2)

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US (1) US9001549B2 (enExample)
JP (1) JP6174899B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102087443B1 (ko) 2012-05-11 2020-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
JP2014195241A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
US9607991B2 (en) 2013-09-05 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI658597B (zh) 2014-02-07 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置
KR102581808B1 (ko) 2014-12-18 2023-09-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 센서 장치, 및 전자 기기
DE112017001059T5 (de) * 2016-02-29 2018-11-29 Sony Corporation Halbleiterschaltkreis, verfahren zur ansteuerung des halbleiterschaltkreises und elektronische vorrichtung
JPWO2017158465A1 (ja) 2016-03-18 2019-02-14 株式会社半導体エネルギー研究所 記憶装置
TWI724231B (zh) * 2016-09-09 2021-04-11 日商半導體能源硏究所股份有限公司 記憶體裝置及其工作方法、半導體裝置、電子構件以及電子裝置
CN110168642B (zh) * 2017-01-10 2023-08-01 株式会社半导体能源研究所 半导体装置及其工作方法、电子构件以及电子设备
WO2020139895A1 (en) 2018-12-24 2020-07-02 The Trustees Of Columbia University In The City Of New York Circuits and methods for in-memory computing

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
JPS62291168A (ja) * 1986-06-11 1987-12-17 Seiko Instr & Electronics Ltd 不揮発性ｒａｍ
JPH01307094A (ja) * 1988-06-02 1989-12-12 Seiko Instr Inc 不揮発性ｒａｍ
JPH0770227B2 (ja) * 1990-10-01 1995-07-31 日鉄セミコンダクター株式会社 半導体メモリの読出し動作制御方法
JPH04366495A (ja) * 1991-06-14 1992-12-18 Kawasaki Steel Corp 不揮発性メモリ
JP4198201B2 (ja) * 1995-06-02 2008-12-17 株式会社ルネサステクノロジ 半導体装置
JP2000293989A (ja) * 1999-04-07 2000-10-20 Nec Corp 強誘電体容量を用いたシャドーｒａｍセル及び不揮発性メモリ装置並びにその制御方法
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP2007108402A (ja) 2005-10-13 2007-04-26 Kyocera Mita Corp 半導体集積回路
US20100006912A1 (en) * 2008-07-14 2010-01-14 Honeywell International Inc. Planar Metal-Insulator-Metal Circuit Element and Method for Planar Integration of Same
JP5781720B2 (ja) * 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP2010218671A (ja) * 2009-03-19 2010-09-30 Renesas Electronics Corp 半導体記憶装置
WO2011062075A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
IN2012DN04871A (enExample) * 2009-12-11 2015-09-25 Semiconductor Energy Laoboratory Co Ltd
KR101729933B1 (ko) 2009-12-18 2017-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
WO2011078373A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device
TWI570719B (zh) 2011-05-20 2017-02-11 半導體能源研究所股份有限公司 儲存裝置及信號處理電路
KR102087443B1 (ko) 2012-05-11 2020-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법

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