JP2016213465A - 積層電子デバイスとその製造方法 - Google Patents
積層電子デバイスとその製造方法 Download PDFInfo
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Abstract
Description
10a…第一プリントヘッド
10b…第二プリントヘッド
20…第一3D印刷
20’…第二3D印刷
20”…第三3D印刷
100…第一基板
102…第一絶縁層
104…第一再配線層
106…第二基板
108…スルーサブストレートビア
110…第二絶縁層
112…第二再配線層
200…積層電子デバイス
300…積層電子デバイスの製造方法
301、303、305、307、309…ステップ
Claims (14)
- 積層電子デバイスの製造方法であって、
第一基板を提供する工程と、
第一三次元(3D)印刷を実行して、第一絶縁層、および、第一再配線層(RDL)を、前記第一基板上に形成し、前記複数の第一RDLを、前記第一絶縁層に組み込む工程と、
第二3D印刷を実行して、第二基板、および、複数のスルーサブストレートビア(TSV)を、前記第一絶縁層上に形成し、前記複数のTSVが前記第二基板を貫通し、且つ、前記複数の第一RDLに電気的に接続される工程と、
第三3D印刷を実行して、第二絶縁層、および、複数の第二RDLを、前記第二基板上に形成し、前記複数の第二RDLを、前記第二絶縁層に組み込み、且つ、前記複数のTSVに電気的に接続される工程と、
第三基板の複数の電気的接点を、前記第三基板が前記第二絶縁層に搭載される前記複数の第二RDLに接合する工程と、
を有することを特徴とする積層電子デバイスの製造方法。 - 前記第一基板は、プリント回路板(PCB)、ウェハ、チップ、あるいは、それらの組み合わせを有することを特徴とする請求項1に記載の積層電子デバイスの製造方法。
- 前記第一絶縁層、および、前記第二絶縁層は、セラミック材料、ポリマー材、樹脂材料、または、誘電材料を有することを特徴とする請求項1に記載の積層電子デバイスの製造方法。
- 前記複数の第一RDL、および、前記複数の第二RDLは、アルミニウム、銅、金、または、それらの合金を有することを特徴とする請求項1に記載の積層電子デバイスの製造方法。
- 前記第二基板は、成型材料、セラミック材料、ポリマー材、樹脂材料、または、誘電材料を有することを特徴とする請求項1に記載の積層電子デバイスの製造方法。
- 前記第二基板は半導体材料を有し、および、本方法は、さらに、絶縁スペーサを形成して、前記第二基板と前記複数のTSVを電気的に絶縁する工程を有することを特徴とする請求項1に記載の積層電子デバイスの製造方法。
- 前記複数のTSVは、タングステン、アルミニウム、銅、金、無鉛はんだ、または、それらの合金を有することを特徴とする請求項1に記載の積層電子デバイスの製造方法。
- 前記第一、第二、および、第三3D印刷は、少なくとも二つのプリントヘッドを有し、前記第一、第二、および、第三3D印刷のそれぞれの期間中、少なくとも二つの異なる材料を同時に形成可能な3Dプリンターにより実行されることを特徴とする請求項1に記載の積層電子デバイスの製造方法。
- 積層電子デバイスであって、
第一基板と、
共に前記第一基板上に設置される、第一絶縁層、および、前記第一絶縁層に組み込まれる複数の第一RDLと、
共に前記第一絶縁層上に設置される、第二基板、および、前記第二基板を貫通し前記複数のRDLに電気的に接続される複数のTSVと、
共に前記第二基板上に設置される、第二絶縁層、および、前記第二絶縁層中に組み込まれ前記複数のTSVに電気的に接続される複数の第二RDLと、
前記第二絶縁層上に搭載され、且つ、前記複数の第二RDLに接合される複数のコンタクトを有する第三基板とを有し、
前記第一絶縁層、前記複数の第一RDL、前記第二基板、前記複数のTSV、前記第二絶縁層、および、前記複数のRDLは、3D印刷に用いられる材料で形成されていることを特徴とする積層電子デバイス。 - 前記第一絶縁層、および、前記第二絶縁層は、セラミック材料、ポリマー材、樹脂材料、または、誘電材料を有することを特徴とする請求項9に記載の積層電子デバイス。
- 前記複数の第一RDL、および、前記複数の第二RDLは、アルミニウム、銅、金、または、それらの合金を有することを特徴とする請求項9に記載の積層電子デバイス。
- 前記第二基板は、成型材料、セラミック材料、ポリマー材、樹脂材料、または、誘電材料を有することを特徴とする請求項9に記載の積層電子デバイス。
- 前記第二基板は半導体材料を有し、前記積層電子デバイスは、さらに、絶縁スペーサを有して、前記第二基板と前記複数のTSVを電気的に絶縁することを特徴とする請求項9に記載の積層電子デバイス。
- 前記複数のTSVは、タングステン、アルミニウム、銅、金、無鉛はんだ、または、それらの合金を有することを特徴とする請求項9に記載の積層電子デバイス。
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Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
KR102436416B1 (ko) | 2014-10-17 | 2022-08-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성 |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
US10618141B2 (en) | 2015-10-30 | 2020-04-14 | Applied Materials, Inc. | Apparatus for forming a polishing article that has a desired zeta potential |
US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
CN106876364A (zh) * | 2017-03-15 | 2017-06-20 | 三星半导体(中国)研究开发有限公司 | 半导体封装件及其制造方法 |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
CN107745549B (zh) * | 2017-09-14 | 2019-08-13 | 中北大学 | 一种增材制造内置电路金属复合板的方法 |
WO2019190676A1 (en) | 2018-03-30 | 2019-10-03 | Applied Materials, Inc. | Integrating 3d printing into multi-process fabrication schemes |
CN112654655A (zh) | 2018-09-04 | 2021-04-13 | 应用材料公司 | 先进抛光垫配方 |
GB2578187B (en) * | 2018-09-28 | 2022-10-05 | Guangdong Acxel Micro & Nano Tech Co Ltd | Droplet actuation |
CN111211105A (zh) * | 2018-11-22 | 2020-05-29 | 华邦电子股份有限公司 | 重布线层结构及其制造方法 |
US11063010B2 (en) * | 2019-02-01 | 2021-07-13 | Winbond Electronics Corp. | Redistribution layer (RDL) structure and method of manufacturing the same |
CN112136209A (zh) * | 2019-04-24 | 2020-12-25 | 深圳市汇顶科技股份有限公司 | 集成转接件的第一元件、互联结构及其制备方法 |
WO2020215249A1 (zh) * | 2019-04-24 | 2020-10-29 | 深圳市汇顶科技股份有限公司 | 芯片互联装置、集成桥结构的基板及其制备方法 |
CN110444483A (zh) * | 2019-07-25 | 2019-11-12 | 深圳宏芯宇电子股份有限公司 | 集成电路重布线层制备方法及半导体器件 |
CN113284868A (zh) * | 2020-02-20 | 2021-08-20 | 华邦电子股份有限公司 | 半导体元件及其制造方法 |
US11309267B2 (en) * | 2020-07-15 | 2022-04-19 | Winbond Electronics Corp. | Semiconductor device including uneven contact in passivation layer and method of manufacturing the same |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
CN113580557A (zh) * | 2021-07-28 | 2021-11-02 | 沛顿科技(深圳)有限公司 | 一种tsv工艺中替代ncf的3d打印方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02132881A (ja) * | 1988-11-14 | 1990-05-22 | Furukawa Electric Co Ltd:The | 回路基板の製造方法 |
JPH11163499A (ja) * | 1997-11-28 | 1999-06-18 | Nitto Boseki Co Ltd | プリント配線板の製造方法及びこの製造方法によるプリント配線板 |
JP2003101245A (ja) * | 2001-09-25 | 2003-04-04 | Ind Technol Res Inst | 積層回路の形成方法および形成装置 |
US20050056913A1 (en) * | 2003-09-16 | 2005-03-17 | Farnworth Warren M. | Stereolithographic method for forming insulative coatings for via holes in semiconductor devices, insulative coatings so formed, systems for forming the insulative coatings, and semiconductor devices including via holes with the insulative coatings |
JP2005183803A (ja) * | 2003-12-22 | 2005-07-07 | Canon Inc | 配線形成方法、配線板、配線形成装置及びインクセット |
JP2007158352A (ja) * | 2005-12-07 | 2007-06-21 | Samsung Electro Mech Co Ltd | 配線基板の製造方法及び配線基板 |
WO2015041189A1 (ja) * | 2013-09-17 | 2015-03-26 | 東レエンジニアリング株式会社 | 多層配線基板の製造方法及びこれに用いる三次元造形装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4207004B2 (ja) * | 2005-01-12 | 2009-01-14 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US8147903B2 (en) | 2005-06-22 | 2012-04-03 | Canon Kabushiki Kaisha | Circuit pattern forming method, circuit pattern forming device and printed circuit board |
KR101060272B1 (ko) * | 2010-04-22 | 2011-08-29 | 한국철강 주식회사 | 광기전력 장치와 이의 제조 방법 |
US8716867B2 (en) | 2010-05-12 | 2014-05-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Forming interconnect structures using pre-ink-printed sheets |
FR2972595B1 (fr) * | 2011-03-10 | 2014-03-14 | Commissariat Energie Atomique | Procede d'interconnexion par retournement d'un composant electronique |
US10518490B2 (en) * | 2013-03-14 | 2019-12-31 | Board Of Regents, The University Of Texas System | Methods and systems for embedding filaments in 3D structures, structural components, and structural electronic, electromagnetic and electromechanical components/devices |
US9768105B2 (en) * | 2012-04-20 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Rigid interconnect structures in package-on-package assemblies |
US8963135B2 (en) * | 2012-11-30 | 2015-02-24 | Intel Corporation | Integrated circuits and systems and methods for producing the same |
EP2952072A1 (en) * | 2013-01-31 | 2015-12-09 | Yissum Research Development Company of The Hebrew University of Jerusalem Ltd. | Three-dimensional conductive patterns and inks for making same |
US9209136B2 (en) * | 2013-04-01 | 2015-12-08 | Intel Corporation | Hybrid carbon-metal interconnect structures |
NL2010713C2 (en) * | 2013-04-26 | 2014-10-29 | Univ Delft Tech | Method of forming silicon on a substrate. |
CN103273592A (zh) * | 2013-05-27 | 2013-09-04 | 苏州扬清芯片科技有限公司 | 一种微流控芯片模具的制备方法 |
CN104347538B (zh) * | 2013-07-24 | 2018-02-16 | 精材科技股份有限公司 | 晶片堆叠封装体及其制造方法 |
US20150197063A1 (en) * | 2014-01-12 | 2015-07-16 | Zohar SHINAR | Device, method, and system of three-dimensional printing |
-
2015
- 2015-05-08 CN CN201510230562.XA patent/CN106206409B/zh active Active
-
2016
- 2016-03-01 US US15/057,973 patent/US10483235B2/en active Active
- 2016-05-09 JP JP2016093767A patent/JP6263573B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02132881A (ja) * | 1988-11-14 | 1990-05-22 | Furukawa Electric Co Ltd:The | 回路基板の製造方法 |
JPH11163499A (ja) * | 1997-11-28 | 1999-06-18 | Nitto Boseki Co Ltd | プリント配線板の製造方法及びこの製造方法によるプリント配線板 |
JP2003101245A (ja) * | 2001-09-25 | 2003-04-04 | Ind Technol Res Inst | 積層回路の形成方法および形成装置 |
US20050056913A1 (en) * | 2003-09-16 | 2005-03-17 | Farnworth Warren M. | Stereolithographic method for forming insulative coatings for via holes in semiconductor devices, insulative coatings so formed, systems for forming the insulative coatings, and semiconductor devices including via holes with the insulative coatings |
JP2005183803A (ja) * | 2003-12-22 | 2005-07-07 | Canon Inc | 配線形成方法、配線板、配線形成装置及びインクセット |
JP2007158352A (ja) * | 2005-12-07 | 2007-06-21 | Samsung Electro Mech Co Ltd | 配線基板の製造方法及び配線基板 |
WO2015041189A1 (ja) * | 2013-09-17 | 2015-03-26 | 東レエンジニアリング株式会社 | 多層配線基板の製造方法及びこれに用いる三次元造形装置 |
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